IGBT g
Abstract: TO263AA
Text: Advanced Technical Information HiPerFASTTM IGBT LightspeedTM Series IXGA 12N60CD1 IXGP 12N60CD1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30
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12N60CD1
12N60CD1
O-220
O-263
IGBT g
TO263AA
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12N60CD1
Abstract: IGBT g 12N60CD
Text: HiPerFASTTM IGBT LightspeedTM Series IXGA 12N60CD1 IXGP 12N60CD1 VCES IC25 VCE sat tfi(typ) = 600 V = 24 A = 2.1 V = 55 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V
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12N60CD1
O-263
with055
12N60CD1
IGBT g
12N60CD
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PDF
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT LightspeedTM Series IXGA 12N60CD1 IXGP 12N60CD1 VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25
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12N60CD1
O-263
728B1
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PDF
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12N60CD1
Abstract: No abstract text available
Text: HiPerFASTTM IGBT LightspeedTM Series IXGA 12N60CD1 IXGP 12N60CD1 VCES IC25 VCE sat tfi(typ) = 600 V = 24 A = 2.1 V = 55 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW 600
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Original
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12N60CD1
12N60CD1
O-263
O-220
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PDF
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12N60CD1
Abstract: 12n60c
Text: HiPerFASTTM IGBT LightspeedTM Series IXGA 12N60CD1 IXGP 12N60CD1 VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25
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Original
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12N60CD1
728B1
12N60CD1
12n60c
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PDF
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Untitled
Abstract: No abstract text available
Text: aixY S Advanced Data Hi Per FAST IGBT IXGA 12N60C IXGP 12N60C V CES ^C25 VCE sat ^fi(typ) Symbol Test Conditions V CES ^ =25°C to150°C VC G R T,J = VGES VGEM C25 Maximum Ratings 600 V (300 V Continuous ±20 V Transient +30 V 24 A 25cC to150°C ;’ FLG t = 1 MQ
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OCR Scan
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12N60C
to150
O-220
O-263
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PDF
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C25 diode
Abstract: GE 0270
Text: nixY S Advanced Technical Information HiPerFAST IGBT IXGA 12N60CD1 VCES IXGP 12N60CD1 C25 V 24 A 2.1 V 120 ns V CE sat tf'(typ) oe 600 Gil OE Maximum Ratings Symbol Test Conditions V CES Tj =25°C to 150°C 600 V V CGR Tj = 25° C to 150° C; RGE= 1 MU
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OCR Scan
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12N60CD1
12N60CD1
O-220
O-263
C25 diode
GE 0270
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PDF
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IXGA 12N60C
Abstract: No abstract text available
Text: Advanced Data HiPerFAST IGBT vCES IXGA 12N60C IXGP 12N60C = = = = ^C25 v" CE sat ^fi(typ) 600 V 24 A 2.1 V 55 ns 8j $ Symbol Test Conditions Maximum Ratings VCES Tj = 25‘>C to 150°C 600 V v" cgr Tj = 25°C to 150°C; RGE = 1 M£2 600 V v¥ges v GEM
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OCR Scan
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12N60C
12N60C
O-263
O-220
IXGA 12N60C
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PDF
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12n60c
Abstract: transistor 12n60c IXGA 12N60C IXGA12N60C IXGP12N60C
Text: IXGA 12N60C VCES = 600 V IXGP 12N60C IC25 = 24 A VCE sat = 2.7 V tfi(typ) = 55 ns HiPerFASTTM IGBT Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30
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12N60C
O-263
O-220
728B1
transistor 12n60c
IXGA 12N60C
IXGA12N60C
IXGP12N60C
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PDF
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Untitled
Abstract: No abstract text available
Text: IXGA 12N60C VCES = 600 V IXGP 12N60C IC25 = 24 A VCE sat = 2.7 V tfi(typ) = 55 ns HiPerFASTTM IGBT Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30
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Original
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12N60C
O-263
O-220
728B1
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PDF
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Untitled
Abstract: No abstract text available
Text: □ IX Y S Advanced Technical Information HiPerFAST IGBT Lightspeed™ Series IXGA 12N60CD1 IXGP 12N60CD1 600 V 24 A 2.1 V 55 ns V CES ^C25 V , CE sat Maximum Ratings Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i
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OCR Scan
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12N60CD1
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PDF
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200n60
Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40
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PLUS247
20N30
28N30
30N30
40N30
31N60
38N60
41N60
60N60
O-264
200n60
20N30
n60c
50N60
7N60B
IC IGBT 25N120
IC600
80n60
60n60 igbt
25N120
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2QN60
Abstract: ixgh 1500
Text: IGBT with Diode /G ^ S p e e , S = Suffix c G series high gain, high speed V Type t jm = 150° c >- New { IXGA 12N100U1 IXGP 12N100U1 IXGH 12N100U1 I j £ 1 S. Î I* IXGH > IXGH IXGH IXGH IXGH 17N100U1 40N30BD1 22N50BU1 24N50BU1 32N50BU1 V IXGH IXGH IXGH
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OCR Scan
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T0-220AB^
12N100U1
17N100U1
40N30BD1
22N50BU1
24N50BU1
32N50BU1
2QN60BU1
2QN60
ixgh 1500
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PDF
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120n60b
Abstract: 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B
Text: Contents IGBT V CE sat 1 TO-220 TO-263 ! TO-247 (IXGP) (IXGA) ! (IXGH) max Tc=25 °C PLUS247 (IXGX) TO-268 (IXGT) TO-264 (IXGK) miniBLOC {IXGN) Page V 300 600 40 56 ► i* G H ¿',N 30 >• IXGH 28N30 60 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 3 ÍN S 0 76 * 75 *
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OCR Scan
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O-220
O-263
O-247
28N30
30N30
40N30
2N100
8N100
6N100
12N10Q
120n60b
40N30BD1
32N50
7n60c
20N60BU1
40N60A
B-2160
200n60
12n60c
IXGH24N50B
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12n60c
Abstract: 60n60 igbt 20N30 diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60
Text: HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE sat 600 1000 TO-220 IC VCE(sat) (IXGP) TC = max 25 °C TC=25 °C A V PLUS247 (IXGX) 1.6 1.8 60 1.6 1.8 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 31N60 75 ¬ 1.6 75 ¬ 1.6 ä ä ä IXGH 20N30 IXGH 28N30 TO-268 ISOPLUS247TM
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O-220
O-263
O-247
PLUS247
O-268
ISOPLUS247TM
O-264
20N30
28N30
30N30
12n60c
60n60 igbt
diode b242
31N60
ixgk50n60bu1
50n60bd1
Diode 12 b2
120n60
60N60
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PDF
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7N60B
Abstract: 65A3 40N60A 60N60 IXGA 12N60C 200n60 ixgh 1500 30N30 IXG IGBT ixgh
Text: Insulated Gate Bipolar Transistors IGBT G series (high gain, high speed) v CE{Mt) Type T „ = 25°C A = 150°C New t jm > > IXGH 28N30 > 56 60 60_ IXGH 30N30 > IXGH 4QN30 > IXGH 31N60 IXGH IXGH IXGH > IXGN IXGN > IX G A 12N100 IXGH 12N100 IXGP 12N100 28
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30N30
28N30
4QN30
31N60
38N60
41N60
60N60
200N60
25N100A
7N60B
65A3
40N60A
IXGA 12N60C
200n60
ixgh 1500
IXG IGBT
ixgh
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PDF
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7n60b
Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3
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AXC-051
AXC-053
AXC-101
AXC-102
AXL-001
AXL-051
AXV-102
142-12io8
142-16io8
19-08ho1
7n60b
35N120u1
ixys dsei 45-12a
DSDI 35-12A
20N80
80n06
80n60
VVY 40-16IO1
IXYS CS 2-12
IXFX 44N80
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DSE 130 -06A
Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
Text: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01
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OCR Scan
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AXC-051
AXC-051-R
AXC-102
AXV-002
015-14to1
2x45-16io1
2x60-08io1
2x60-12io1
2x60-14io1
2x60-16io1
DSE 130 -06A
vub 70-12
IXGH 30n120
vub 70-16
30N60B
80N10
12N60CD
DSEI 30-16 AS
DSEP 15-06A
13N50
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