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    IXYS Corporation IXFR48N50Q

    MOSFET N-CH 500V 40A ISOPLUS247
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    IXFR48N50Q Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXFR48N50Q IXYS 500V HiPerFET power MOSFET Original PDF
    IXFR48N50Q IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 40A ISOPLUS247 Original PDF

    IXFR48N50Q Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    48N50Q

    Abstract: 44N50 0NAL IXFR44N50Q IXFR48N50Q 44N50Q
    Text: HiPerFETTM Power MOSFETs ISOPLUS247TM, Q-Class VDSS IXFR 44N50Q IXFR 48N50Q ID25 RDS on Ω 500 V 34 A 120 mΩ Ω 500 V 40 A 110 mΩ trr ≤ 250 ns (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Maximum Ratings


    Original     		PDF ISOPLUS247TM, 44N50Q 48N50Q 247TM E153432 IXFR44N50Q: IXFR48N50Q: 728B1 48N50Q 44N50 0NAL IXFR44N50Q IXFR48N50Q 44N50Q

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs ISOPLUS247TM, Q-Class VDSS IXFR 44N50Q IXFR 48N50Q ID25 RDS on 500 V 34 A 120 mW 500 V 40 A 100 mW trr £ 250 ns (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet


    Original     		PDF ISOPLUS247TM, 44N50Q 48N50Q 48N50Q IXFR44N50Q:

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs ISOPLUS247TM, Q-Class VDSS IXFR 44N50Q IXFR 48N50Q ID25 RDS on 500 V 34 A 120 mW 500 V 40 A 100 mW trr £ 250 ns (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet


    Original     		PDF ISOPLUS247TM, 44N50Q 48N50Q 48N50Q IXFR44N50Q:

    IXFR44N50Q

    Abstract: IXFR48N50Q 48N50Q ixfr48n5
    Text: HiPerFETTM Power MOSFETs ISOPLUS247TM, Q-Class VDSS IXFR 44N50Q IXFR 48N50Q ID25 RDS on Ω 500 V 34 A 120 mΩ Ω 500 V 40 A 110 mΩ trr ≤ 250 ns (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Maximum Ratings


    Original     		PDF ISOPLUS247TM, 44N50Q 48N50Q 728B1 123B1 728B1 065B1 IXFR44N50Q IXFR48N50Q 48N50Q ixfr48n5

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs ISOPLUS247TM, Q-Class VDSS IXFR 44N50Q IXFR 48N50Q ID25 RDS on 500 V 34 A 120 mW 500 V 40 A 100 mW trr £ 250 ns (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet


    Original     		PDF ISOPLUS247TM, 44N50Q 48N50Q 48N50Q -55ss

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs ISOPLUS247TM, Q-Class VDSS IXFR 44N50Q IXFR 48N50Q ID25 RDS on Ω 500 V 34 A 120 mΩ Ω 500 V 40 A 110 mΩ trr ≤ 250 ns (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions


    Original     		PDF ISOPLUS247TM, 44N50Q 48N50Q 728B1 123B1 728B1 065B1

    ne 22 mosfet

    Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50
    Text: HiPerFET Power MOSFETs L° w Gate-Ch TVPeS = S u „t9 Q Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON Wort) Tc=25 C T_=25 C A m l) G on) ISOPLUS220™ (C) ISOPLUS247™V T0268 TO-263 TO-220 PLU S 247™ ^^ l3PAK (x > .4 TO-247 ‘ (H)


    OCR Scan     		PDF ISOPLUS220TM ISOPLUS247TMV T0268 T0264 OT227B O-263 O-220 247TM O-247 O-204 ne 22 mosfet IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50