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    102N30P Search Results

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    102N30P Price and Stock

    Littelfuse Inc IXFN102N30P

    MOSFET N-CH 300V 88A SOT227B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFN102N30P Tube 300 1
    • 1 $18.08
    • 10 $18.034
    • 100 $18.034
    • 1000 $18.034
    • 10000 $18.034
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    Newark IXFN102N30P Bulk 300
    • 1 -
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    • 100 -
    • 1000 $18.9
    • 10000 $18.9
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    Littelfuse Inc IXTK102N30P

    MOSFET N-CH 300V 102A TO264
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTK102N30P Tube 36 1
    • 1 $14.06
    • 10 $14.06
    • 100 $14.06
    • 1000 $14.06
    • 10000 $14.06
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    Newark IXTK102N30P Bulk 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $9.52
    • 10000 $9.52
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    Littelfuse Inc IXFK102N30P

    MOSFET N-CH 300V 102A TO264AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFK102N30P Tube 5 300
    • 1 -
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    • 1000 $9.32437
    • 10000 $9.32437
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    Newark IXFK102N30P Bulk 300
    • 1 -
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    • 100 -
    • 1000 $9.78
    • 10000 $9.78
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    Littelfuse Inc IXFR102N30P

    MOSFET N-CH 300V 60A ISOPLUS247
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    DigiKey IXFR102N30P Tube 300
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    • 1000 $11.83313
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    Newark IXFR102N30P Bulk 300
    • 1 -
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    • 100 -
    • 1000 $12.41
    • 10000 $12.41
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    IXYS Corporation IXTK102N30P

    MOSFETs 102 Amps 300V 0.033 Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXTK102N30P 252
    • 1 $10.17
    • 10 $10.17
    • 100 $9.08
    • 1000 $9.08
    • 10000 $9.08
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    TTI IXTK102N30P Tube 300
    • 1 -
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    • 100 -
    • 1000 $9.08
    • 10000 $9.08
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    TME IXTK102N30P 1
    • 1 $12.58
    • 10 $10.57
    • 100 $10.2
    • 1000 $10.2
    • 10000 $10.2
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    New Advantage Corporation IXTK102N30P 19 1
    • 1 -
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    • 100 $21.56
    • 1000 $21.56
    • 10000 $21.56
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    Find more 102N30P price and stock on Findchips.com

    102N30P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ISOPLUS247

    Abstract: No abstract text available
    Text: Advanced Technical Information PolarHTTM HiPerFET IXFR 102N30P Power MOSFET VDSS ID25 RDS on trr = = = ≤ 300 V 60 A Ω 36 mΩ 200 ns N-Channel Enhancement Mode Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 102N30P ISOPLUS247

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarHTTM HiPerFET IXFK 102N30P Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions VDSS TJ = 25° C to 150° C 300 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		PDF 102N30P 405B2

    102N30P

    Abstract: 102N30 IXTK102N30P
    Text: PolarHTTM Power MOSFET IXTK 102N30P VDSS = 300 V ID25 = 102 A Ω RDS on ≤ 33 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 300 300 V V VGSS VGSM


    Original     		PDF 102N30P 102N30P 102N30 IXTK102N30P

    Untitled

    Abstract: No abstract text available
    Text: PolarHTTM Power MOSFET VDSS = 300 V ID25 = 102 A Ω RDS on ≤ 33 mΩ IXTK 102N30P N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 300 300 V V VGSS VGSM


    Original     		PDF 102N30P O-264

    IXFN102N30P

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET IXFN 102N30P Power MOSFET VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr RDS on Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGS VGSM


    Original     		PDF 102N30P IXFN102N30P

    102N30P

    Abstract: IXTK102N30P
    Text: Advanced Technical Information PolarHTTM Power MOSFET IXTK 102N30P VDSS ID25 RDS on = 300 V = 102 A Ω = 33 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSM ID25


    Original     		PDF 102N30P O-264 102N30P IXTK102N30P

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET IXFN 102N30P Power MOSFET VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr RDS on Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGS VGSM


    Original     		PDF 102N30P

    102N30P

    Abstract: No abstract text available
    Text: Advanced Technical Information PolarHTTM HiPerFET IXFK 102N30P IXFN 102N30P Power MOSFET VDSS ID25 RDS on trr = = = ≤ 300 V 102 A Ω 33 mΩ 200 ns N-Channel Enhancement Mode Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF 102N30P 102N30P

    123B16

    Abstract: 88 881 505 102N30P IXFN102N30P C8860
    Text: Preliminary Technical Information PolarHVTM HiPerFET IXFN 102N30P Power MOSFET VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr RDS on Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		PDF 102N30P 405B2 123B16 88 881 505 102N30P IXFN102N30P C8860

    NS224

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarHTTM HiPerFET IXFK 102N30P Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions VDSS TJ = 25° C to 150° C 300 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		PDF 102N30P 405B2 NS224

    ISOPLUS247

    Abstract: No abstract text available
    Text: PolarHTTM HiPerFET IXFR 102N30P Power MOSFET VDSS = 300 V ID25 = 60 A RDS on ≤ 36 m Ω ≤ 200 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C


    Original     		PDF 102N30P ISOPLUS247

    Untitled

    Abstract: No abstract text available
    Text: PolarHTTM HiPerFET IXFR 102N30P Power MOSFET VDSS = 300 V ID25 = 60 A RDS on ≤ 36 m Ω ≤ 200 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C


    Original     		PDF 102N30P

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2