Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IXFP4N100Q Search Results

    SF Impression Pixel

    IXFP4N100Q Price and Stock

    IXYS Corporation IXFP4N100Q

    MOSFET N-CH 1000V 4A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFP4N100Q Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3.6572
    • 10000 $3.6572
    		Buy Now

    IXFP4N100Q Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXFP4N100Q IXYS HiPerFET Power MOSFET Q-Class Original PDF

    IXFP4N100Q Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: HiperFETTM Power MOSFETs Q-Class VDSS ID25 IXFA4N100Q IXFP4N100Q RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1000V = 4A ≤ 3.0Ω Ω TO-263 AA (IXFA) G S Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXFA4N100Q IXFP4N100Q O-263 125OC 4N100Q 4-01-11-A

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information HiPerFETTM Power MOSFET Q-Class VDSS = 1000V ID25 = 2.2A Ω RDS on ≤ 3.0Ω IXFP4N100QM N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Fast Intrinsic Diode Symbol Test Conditions OVERMOLDED (IXFP.M) OUTLINE


    Original     		PDF IXFP4N100QM 4N100Q

    4N100Q

    Abstract: No abstract text available
    Text: Advance Technical Information IXFP4N100QM HiPerFETTM Power MOSFET Q-Class VDSS = 1000V ID25 = 2.2A Ω RDS on ≤ 3.0Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF IXFP4N100QM 4N100Q

    4N100Q

    Abstract: No abstract text available
    Text: Advance Technical Information IXFP4N100QM HiPerFETTM Power MOSFET Q-Class VDSS = 1000V ID25 = 2.2A Ω RDS on ≤ 3.0Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Fast Intrinsic Diode OVERMOLDED TO-220 (IXFP.M) OUTLINE Symbol Test Conditions


    Original     		PDF IXFP4N100QM O-220 4N100Q

    IXFA4N100Q

    Abstract: IXFP4N100Q 4N100Q
    Text: IXFA4N100Q IXFP4N100Q HiperFETTM Power MOSFETs Q-Class VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1000V = 4A ≤ 3.0Ω Ω TO-263 AA (IXFA) G S Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXFA4N100Q IXFP4N100Q O-263 O-220AB 125OC 4N100Q 4-01-11-A IXFP4N100Q 4N100Q

    mosfet 600V 10A logic level

    Abstract: IXFP4N100Q IXDD414 IX2R11P7 High Side dsei12 DSEI12-10A IX2R11 IX2R11S3 IXDD
    Text: Preliminary Data Sheet IX2R11 2A Half-Bridge Driver Features • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers


    Original     		PDF IX2R11 IX2R11 HCPL-314J DSEI12-10A IXDD414 IXFP4N100Q -600V IX2R11S3 mosfet 600V 10A logic level IXFP4N100Q IXDD414 IX2R11P7 High Side dsei12 DSEI12-10A IXDD

    IXFH32N50Q equivalent

    Abstract: ixfk24n100 IXFD80N20Q-8X IXFN80N50 1672 mos-fet IXFH40N30
    Text: HiPerFETTM Power MOSFET Chips N-Channel Enhancement-Mode with Fast Intrinsic Diode Type VDSS max. TJM = 150°C RDS on @ ID max. Ciss trr max. Chip type Chip size dimensions Source ¬ bond wire recommend Equivalent device data sheet Dim. outline No. V Ω


    Original     		PDF IXFD50N20-7X IXFD50N20Q-7X IXFD80N20Q-8X IXFD90N20Q-8Y IXFD120N20-9X IXFD180N20-9Y IXFD60N25Q-8X IXFD100N25-9X IXFD40N30-7X IXFD40N30Q-7X IXFH32N50Q equivalent ixfk24n100 IXFN80N50 1672 mos-fet IXFH40N30

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    IXCP10M90S

    Abstract: IX2R11P7 10M90s IXTH14N60P 78L15 DSEI12-10A IX2R11 IX2R11S3 IXDD414 IXCP
    Text: IX2R11 IX2R11 500 Volt, 2 Ampere High & Low-side Driver for N-Channel MOSFETs and IGBTs Features General Description • Floating High Side Driver with boot-strap power supply along with a Low Side Driver. • Fully operational to 500V • ± 50V/ns dV/dt immunity


    Original     		PDF IX2R11 IX2R11 IX2R11S3 IX2R11P7 Edisonstrasse15 D-68623; IXCP10M90S 10M90s IXTH14N60P 78L15 DSEI12-10A IXDD414 IXCP

    IX6R11P7

    Abstract: No abstract text available
    Text: IX6R11 600 Volt, 6 Ampere High & Low-side Driver for N-Channel MOSFETs and IGBTs Features General Description • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 600V • ± 50V/ns dV/dt immunity


    Original     		PDF IX6R11 IX6R11 IX6R11S6 IX6R11S3 IX6R11P7

    Untitled

    Abstract: No abstract text available
    Text: IX4R11 Preliminary Data Sheet 4A Half-Bridge Driver Features • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers


    Original     		PDF IX4R11 IX4R11 HCPL-314J DSEI12-10A IXDD414 IXFP4N100Q -600V IX4R11S3 IX4R11P7

    Untitled

    Abstract: No abstract text available
    Text: IX4R11 Preliminary Data Sheet 4A Half-Bridge Driver Features • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers


    Original     		PDF IX4R11 IX4R11 HCPL-314J DSEI12-10A IXDD414 IXFP4N100Q -600V IX4R11S3 IX4R11P7

    VCH20

    Abstract: IX6R11P7 ixdd414 IXFK21N100F 18PIN 18-PIN IX6R11 IX6R11S3 IX6R11S6 ixys mosfet
    Text: IX6R11 6A Half-Bridge Driver Features • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers


    Original     		PDF IX6R11 IX6R11 IXFH14N100Q IXTU01N100 IX6R11S3 IX6R11S6 IX6R11S3 IX6R11S6 VCH20 IX6R11P7 ixdd414 IXFK21N100F 18PIN 18-PIN ixys mosfet

    IXCP10M90S

    Abstract: IX6R11S6 18-PIN 10m90s
    Text: IX6Q11 1 MHz, 300 Volt, 6 Ampere High & Low-side Driver for N-Channel MOSFETs and IGBTs Features General Description • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 300V* • ± 50V/ns dV/dt immunity


    Original     		PDF IX6Q11 IX6Q11 IXTU01N100 IX6Q11S3 IX6Q11S6 IXCP10M90S IX6R11S6 18-PIN 10m90s

    IX6R11P7

    Abstract: No abstract text available
    Text: IX6R11 6A Half-Bridge Driver Features • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers


    Original     		PDF IX6R11 IX6R11 sigTU01N100 IXTU01N100 IX6R11S6 IX6R11S3 IX6R11S3 IX6R11S6 IX6R11P7

    HV MOSFET

    Abstract: No abstract text available
    Text: Preliminary Data Sheet IX2R11 2A Half-Bridge Driver Features • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers


    Original     		PDF IX2R11 IX2R11 100uF/250V 50v/ns IXDD414 -600V IXFP4N100Q DSEI12-10A HCPL-314J HV MOSFET

    DSEI12-10A

    Abstract: hcpl 314j igbt High Current Low Side Driver ST VCH20
    Text: IXA611 Preliminary Data Sheet 600mA Half-Bridge Driver Features • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V


    Original     		PDF IXA611 600mA IXA611 100uF/250V 50v/ns IXDD414 -600V IXFP4N100Q DSEI12-10A HCPL-314J DSEI12-10A hcpl 314j igbt High Current Low Side Driver ST VCH20

    10M90S

    Abstract: IXTH14N60P IX6R11 IX6R11S3 IX6R11P7 IXFH14N100Q IXCP 10M90 DSEI12-10A igbt 500V 22A
    Text: IX6R11 600 Volt, 6 Ampere High & Low-side Driver for N-Channel MOSFETs and IGBTs Features General Description • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 600V • ± 50V/ns dV/dt immunity


    Original     		PDF IX6R11 IX6R11 IX6R11S6 IX6R11S3 10M90S IXTH14N60P IX6R11S3 IX6R11P7 IXFH14N100Q IXCP 10M90 DSEI12-10A igbt 500V 22A

    mosfet 600V 10A logic level

    Abstract: 314j DSEI12-10A IX4R11 IX4R11P7 IX4R11S3 IXDD414 High Current Low Side Driver ST
    Text: IX4R11 Preliminary Data Sheet 4A Half-Bridge Driver Features • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers


    Original     		PDF IX4R11 IX4R11 HCPL-314J DSEI12-10A IXDD414 IXFP4N100Q -600V IX4R11S3 mosfet 600V 10A logic level 314j DSEI12-10A IX4R11P7 IXDD414 High Current Low Side Driver ST

    ne 22 mosfet

    Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50
    Text: HiPerFET Power MOSFETs L° w Gate-Ch TVPeS = S u „t9 Q Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON Wort) Tc=25 C T_=25 C A m l) G on) ISOPLUS220™ (C) ISOPLUS247™V T0268 TO-263 TO-220 PLU S 247™ ^^ l3PAK (x > .4 TO-247 ‘ (H)


    OCR Scan     		PDF ISOPLUS220TM ISOPLUS247TMV T0268 T0264 OT227B O-263 O-220 247TM O-247 O-204 ne 22 mosfet IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50