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    IXFK21N100F Price and Stock

    IXYS Corporation IXFK21N100F

    MOSFET N-CH 1000V 21A TO264
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    IXFK21N100F Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFK21N100F IXYS 1000V HiPerRF power MOSFET Original PDF

    IXFK21N100F Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerRFTM Power MOSFETs VDSS = 1000V ID25 = 21A Ω RDS on ≤ 500mΩ ≤ 250ns trr IXFK21N100F IXFX21N100F F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg, High dV/dt, Low trr TO-264 (IXFK) G D S Symbol Test Conditions


    Original     		250ns IXFK21N100F IXFX21N100F O-264 338B2 PDF

    pf640

    Abstract: IXFK21N100F IXFX21N100F PLUS247
    Text: IXFK21N100F IXFX21N100F HiPerRFTM Power MOSFETs VDSS = 1000V = 21A ID25 Ω RDS on ≤ 500mΩ trr ≤ 250ns F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol Test Conditions


    Original     		IXFK21N100F IXFX21N100F 250ns 247TM 00A/s, 338B2 pf640 IXFK21N100F IXFX21N100F PLUS247 PDF

    IXFX21N100F

    Abstract: IXFK21N100F PLUS247
    Text: IXFK21N100F IXFX21N100F HiPerRFTM Power MOSFETs VDSS = 1000V = 21A ID25 Ω RDS on ≤ 500mΩ trr ≤ 250ns F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg, High dV/dt, Low trr TO-264 (IXFK) G D S Symbol Test Conditions


    Original     		IXFK21N100F IXFX21N100F 250ns O-264 338B2 IXFX21N100F IXFK21N100F PLUS247 PDF

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: IX6R11 6A Half-Bridge Driver Features General Description • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers


    Original     		IX6R11 IX6R11 sigFH14N100Q IXTU01N100 IX6R11S6 IX6R11S3 IX6R11S3 IX6R11S6 PDF

    IX6R11S3

    Abstract: IX6R11P7
    Text: IX6R11 6A Half-Bridge Driver Features • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers


    Original     		IX6R11 IX6R11 sigTU01N100 IXTU01N100 IX6R11S6 IX6R11S3 IX6R11S3 IX6R11S6 IX6R11P7 PDF

    IXAN0009

    Abstract: 0009 ixan0009 2 ixan0009 3 TMS320F2407a GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram inverter 500w USING MOSFET schematic diagram PWM inverter 500w
    Text: IXAN0009 HOW TO DRIVE MOSFETs AND IGBTs INTO THE 21ST CENTURY By Mr. Abhijit D. Pathak and Mr. Ralph E. Locher, IXYS Corporation Santa Clara, CA 95054 ABSTRACT As the industry pushes for higher power levels and higher switching frequencies, power supplies, which use MOSFETs/IGBTs for power


    Original     		IXAN0009 IXAN0009 0009 ixan0009 2 ixan0009 3 TMS320F2407a GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram inverter 500w USING MOSFET schematic diagram PWM inverter 500w PDF

    U4008

    Abstract: IX6R11P7 IX6R11S3 IXFK21N100F 18PIN 18-PIN IX6R11 IX6R11S6
    Text: IX6R11 6A Half-Bridge Driver Features • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers


    Original     		IX6R11 IX6R11 IXTU01N100 IX6R11S3 IX6R11S6 IX6R11S3 IX6R11S6 U4008 IX6R11P7 IXFK21N100F 18PIN 18-PIN PDF

    IX6R11P7

    Abstract: No abstract text available
    Text: IX6R11 600 Volt, 6 Ampere High & Low-side Driver for N-Channel MOSFETs and IGBTs Features General Description • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 600V • ± 50V/ns dV/dt immunity


    Original     		IX6R11 IX6R11 IX6R11S6 IX6R11S3 IX6R11P7 PDF

    VCH20

    Abstract: IX6R11P7 ixdd414 IXFK21N100F 18PIN 18-PIN IX6R11 IX6R11S3 IX6R11S6 ixys mosfet
    Text: IX6R11 6A Half-Bridge Driver Features • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers


    Original     		IX6R11 IX6R11 IXFH14N100Q IXTU01N100 IX6R11S3 IX6R11S6 IX6R11S3 IX6R11S6 VCH20 IX6R11P7 ixdd414 IXFK21N100F 18PIN 18-PIN ixys mosfet PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF

    IXAN0011

    Abstract: 0011 resonant smps 500W smps 500w half bridge 2kw mosfet smps 500W half bridge converter 2kw 1kw full bridge converter smps smps 1kW DD408
    Text: IXAN0011 Driving Your MOSFETs Wild to Obtain Greater Efficiencies, Power Densities, and Lower Overall Costs. Sam S. Ochi Director of Integrated Circuits Research and Development IXYS Corporation 3540 Bassett St., Santa Clara California USA Phone: 408-982-4355, Fax: 408-496-0670


    Original     		IXAN0011 100KHz IXAN0011 0011 resonant smps 500W smps 500w half bridge 2kw mosfet smps 500W half bridge converter 2kw 1kw full bridge converter smps smps 1kW DD408 PDF

    IXFD21N100F-8F

    Abstract: IXFD38N100Q2-95 DIODE 1581 IXYS IXFK21N100Q IXFH40N30 IXFH40N50Q IXFK38N80Q2 7Y 6 IXFB50N80Q2 IXFN80N50
    Text: Chip-Shortform2004.pmd HiPerFETTM Power MOSFET Type VDSS max. RDS ON max. Chip type Chip size dimensions Source bond wire recommended Equivalent device data sheet 8 26.10.2004, 12:44 V Ω mm mils IXFD76N07-7X IXFD180N07-9X IXFD340N07-9Y 70 0.015 0.007 0.005


    Original     		IXFD76N07-7X IXFD180N07-9X IXFD340N07-9Y IXFD180N085-9X IXFD280N085-9Y IXFD75N10-7X IXFD80N10Q-8X IXFD170N10-9X IXFD230N10-9Y IXFD70N15-7X IXFD21N100F-8F IXFD38N100Q2-95 DIODE 1581 IXYS IXFK21N100Q IXFH40N30 IXFH40N50Q IXFK38N80Q2 7Y 6 IXFB50N80Q2 IXFN80N50 PDF

    IX6R11S6

    Abstract: ix6r11s3
    Text: IX6R11 6A Half-Bridge Driver Features General Description • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers


    Original     		IX6R11 IX6R11 IXTU01N100 IX6R11S6 IX6R11S3 IX6R11S3 IX6R11S6 Edisonstrasse15 PDF

    Untitled

    Abstract: No abstract text available
    Text: IX6R11 6A Half-Bridge Driver Features General Description • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers


    Original     		IX6R11 IX6R11 sXFH14N100Q IXTU01N100 IX6R11S6 IX6R11S3 IX6R11S3 IX6R11S6 PDF

    IX6R11P7

    Abstract: No abstract text available
    Text: IX6R11 6A Half-Bridge Driver Features • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers


    Original     		IX6R11 IX6R11 sigTU01N100 IXTU01N100 IX6R11S6 IX6R11S3 IX6R11S3 IX6R11S6 IX6R11P7 PDF

    10M90S

    Abstract: IXTH14N60P IX6R11 IX6R11S3 IX6R11P7 IXFH14N100Q IXCP 10M90 DSEI12-10A igbt 500V 22A
    Text: IX6R11 600 Volt, 6 Ampere High & Low-side Driver for N-Channel MOSFETs and IGBTs Features General Description • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 600V • ± 50V/ns dV/dt immunity


    Original     		IX6R11 IX6R11 IX6R11S6 IX6R11S3 10M90S IXTH14N60P IX6R11S3 IX6R11P7 IXFH14N100Q IXCP 10M90 DSEI12-10A igbt 500V 22A PDF

    TO-264 weight

    Abstract: No abstract text available
    Text: High Switching Speed Power MOSFETs F-Class HiPerRF power MOSFET ^D S S b co n t p DS on) °» PD Package style Tc = 25°C Tc = 25°C >• New V A n Fig. No. Type Outline drawings on page 91-100 > IX F H 6 0 N 2 0 F ► IXFT60N20F 200 60 60 0.038 0.038


    OCR Scan     		IXFT60N20F IXFH12N50F IXFT12N50F IXFH21N50F IXFT21N50F IXFH28N50F IXFT28N50F IXFK44N50F IXFX44N50F IXFK55N50F TO-264 weight PDF