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    IXFH8N80 Search Results

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    IXFH8N80 Price and Stock

    IXYS Corporation IXFH8N80

    MOSFET N-CH 800V 8A TO247AD
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    IXFH8N80 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFH8N80 IXYS 800V HiPerFET power MOSFET Original PDF
    IXFH8N80S IXYS HiPerFET Power MOSFET Original PDF

    IXFH8N80 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    8N80

    Abstract: 9n80 diode 931 p 7 W8N80 smd diode SM 97 IXFH9N80 IXFH8N80 125OC 08N80 diode A2 9
    Text: Preliminary Data Sheet VDSS HiPerFET Power MOSFETs TM IXFH8N80 800V IXFH9N80 800V ID25 RDS on trr 8A 9A 1.1Ω 0.9Ω 250 ns 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS


    Original     		PDF IXFH8N80 IXFH9N80 O-247 8N80 9n80 diode 931 p 7 W8N80 smd diode SM 97 125OC 08N80 diode A2 9

    8n80

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFH8N80 IXFH9N80 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS ID25 RDS on trr 800V 800V 8A 9A 1.1W 0.9W 250 ns 250 ns TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 800 V


    Original     		PDF IXFH8N80 IXFH9N80 O-247 Figure10. 8n80

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet VDSS TM HiPerFET Power MOSFETs IXFH8N80 800V IXFH9N80 800V ID25 RDS on trr 8A 9A 1.1Ω 0.9Ω 250 ns 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS


    Original     		PDF IXFH8N80 IXFH9N80 O-247

    8N80

    Abstract: 9n80 IXFH8N80 transistor ixfh application note IXFH9N80 125OC 96527
    Text: HiPerFETTM Power MOSFETs IXFH8N80 IXFH9N80 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Maximum Ratings VDSS ID25 RDS on trr 800V 800V 8A 9A 1.1W 0.9W 250 ns 250 ns Symbol Test Conditions VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MW


    Original     		PDF IXFH8N80 IXFH9N80 Figure10. 8N80 9n80 IXFH8N80 transistor ixfh application note IXFH9N80 125OC 96527

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    IXFH32N50Q equivalent

    Abstract: ixfk24n100 IXFD80N20Q-8X IXFN80N50 1672 mos-fet IXFH40N30
    Text: HiPerFETTM Power MOSFET Chips N-Channel Enhancement-Mode with Fast Intrinsic Diode Type VDSS max. TJM = 150°C RDS on @ ID max. Ciss trr max. Chip type Chip size dimensions Source ¬ bond wire recommend Equivalent device data sheet Dim. outline No. V Ω


    Original     		PDF IXFD50N20-7X IXFD50N20Q-7X IXFD80N20Q-8X IXFD90N20Q-8Y IXFD120N20-9X IXFD180N20-9Y IXFD60N25Q-8X IXFD100N25-9X IXFD40N30-7X IXFD40N30Q-7X IXFH32N50Q equivalent ixfk24n100 IXFN80N50 1672 mos-fet IXFH40N30

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    IRF540 complementary

    Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
    Text: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3


    Original     		PDF RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L IRF540 complementary IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR

    sd 20n60

    Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
    Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80

    IXFd50n20

    Abstract: IXGD32N60B IXFD75N10 IXTD5N100 IXTH40N25 91x0 IXGH25N120A IXTD5N100-5T IXGD32N60B-5X IXGD8N100-2L
    Text: Chips and DCB Ceramic Substrates Contents Page General Information for Chips IGBT Chips J-2 VCES IC VCE sat G-Series, Low VCE(sat) type G-Series, High Speed type 600 - 1200 V 600 - 1200 V 10 - 60 A 10 - 100 A 1.8 - 3.5 V 2.5 - 4.0 V J-3 S-Series, Low VCE(sat) type


    Original     		PDF

    SSH6N80

    Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
    Text: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L


    Original     		PDF BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 SSH6N80 rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50

    IXFH15N100

    Abstract: 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80
    Text: STI Type: IRFP354 Notes: Breakdown Voltage: 450 Continuous Current: 14 RDS on Ohm: 0.35 Trans Conductance Mhos: 5.9 Trans Conductance A: 8.4 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 14 TYP Resistance Switching toff: 89 TYP


    Original     		PDF IRFP354 O-247 IRFP360LC 2N3049DIE 2C3049 O-204AA/TO-3 IXTM20N55A IXFH15N100 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80

    fqp60n06

    Abstract: SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30
    Text: 电子元器件系列 wwww.rf-china.com RF-Micom co.,Ltd EMail:sales@rf-china.com Sale Phone:86-592-5713956 MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30

    8N80

    Abstract: 9n80
    Text: □ IXYS Preliminary Data Sheet HiPerFET Power MOSFETs IXFH8N80 IXFH9N80 D V DSS ^D25 800V 800V 8A 9A DS on % 0.9Q. 250 ns 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family TO-247 AD (IXFH) Maximum Ratings Symbol TestConditions V DSS


    OCR Scan     		PDF IXFH8N80 IXFH9N80 O-204 O-247 8N80 9n80

    96527

    Abstract: 9N80 8n80
    Text: OIXYS VDSS HiPerFET Power MOSFETs IXFH 8N80 IXFH 9N80 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family p ^D25 DS on tr r 800V 8A 1.1Q 250ns 800V 9A 0.9ß 250ns TO-247 AD (IXFH) Preliminary data f D(TAB) Symbol Test Conditions v'DSS T j =25°C to150°C


    OCR Scan     		PDF 250ns 250ns O-247 to150 IXFH8N80 96527 9N80 8n80

    diode DSDI 9

    Abstract: 10N60A IXLN35N120AU1 diode DSDI 12 IXLH35N120A DSP8-12A a1931 DSP8-08AS 95-06DA IXln35N120A
    Text: □IXYS Contents Insulated Gate Bipolar Transistors IGBT Package style CE(aat) Type Page Tc = 25°C V 1. TO-247 AD 2. TO-220 AB 3. TO-264 AA 500 48 2.3 IXGH24N50B IXGH24N50BU1 4-5 6-7 500 75 2.3 IXGH50N50B 8-9 600 20 3.0 IXSH 10N60A 10-11 600 48 2.5 IXGH24N60B


    OCR Scan     		PDF O-247 O-220 O-264 IXGH24N50B IXGH24N50BU1 IXGH50N50B 10N60A IXGH24N60B IXGH24N60BU1 IXGH50N60B diode DSDI 9 IXLN35N120AU1 diode DSDI 12 IXLH35N120A DSP8-12A a1931 DSP8-08AS 95-06DA IXln35N120A

    IXFD14N80

    Abstract: CMP 3.48 ixfh50n20 1XFH12N90 IXFN170N10 diode 348 IXFD110N20 IXFD76N07-12 IXFD21N50 IXFH21N50
    Text: OIXYS HiPerFET Power MOSFET Chips N-Channel Enhancement-Mode with Fast Intrinsic Diode Type v c * D6S tN BL tn CMp max *yp * Chip elze Source 3 b e n tlw li« Equivalent device dutaahaet T * * tS O * G out­ line NO PF na 70 0.012 5 4400 200 IX77 8 .8 4 x 7 .1 9


    OCR Scan     		PDF IXFD76N07-12 XFD67N10 IXFD75N10 IXFD170N10 IXFD42N20 IXFD50N20 IXFD68N20 1XFD90N20Q IXFD110N20 IXFD35N30 IXFD14N80 CMP 3.48 ixfh50n20 1XFH12N90 IXFN170N10 diode 348 IXFD76N07-12 IXFD21N50 IXFH21N50

    ne 22 mosfet

    Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50
    Text: HiPerFET Power MOSFETs L° w Gate-Ch TVPeS = S u „t9 Q Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON Wort) Tc=25 C T_=25 C A m l) G on) ISOPLUS220™ (C) ISOPLUS247™V T0268 TO-263 TO-220 PLU S 247™ ^^ l3PAK (x > .4 TO-247 ‘ (H)


    OCR Scan     		PDF ISOPLUS220TM ISOPLUS247TMV T0268 T0264 OT227B O-263 O-220 247TM O-247 O-204 ne 22 mosfet IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50

    POWER MOSFET 4600

    Abstract: MOSFET 4600 4600 mosfet IXFD80N20Q-8X IXFD40N30-7X IXFX90N20Q 1219X IXFN80N50 IXFn44N80 IXFN39N90
    Text: HiPerFET Power MOSFET Chips N-Channel Enhancement-Mode with Fast Intrinsic Diode B Type " dbmm e«» m ax. m ax. m ax. Chip typ * Chip sue cHmehsfons Tm = 150°C V Q A 1XFD76N07-7X IXFD180N07-9X IXFD340N07-9Y 70 0.012 0.006 0.004 IXFD67N10-7X XFD75N10-7X


    OCR Scan     		PDF 1XFD76N07-7X IXFD180N07-9X IXFD340N07-9Y IXFD67N10-7X XFD75N10-7X IXFD75N10Q-7X XFD80N100-8X XFD170N10-9X XFD230N10-9Y IXFD70N15-7X POWER MOSFET 4600 MOSFET 4600 4600 mosfet IXFD80N20Q-8X IXFD40N30-7X IXFX90N20Q 1219X IXFN80N50 IXFn44N80 IXFN39N90