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IXYS Corporation IXBX25N250 IGBT 2500V 55A PLUS247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXBX25N250	Tube			1	1 $38.93 10 $38.93 100 $29.72933 1000 $29.72933 10000 $29.72933	Buy Now
Mouser Electronics	IXBX25N250					1 $38.93 10 $38.93 100 $29.73 1000 $29.73 10000 $29.73	Get Quote
Future Electronics	IXBX25N250	Tube			300	1 - 10 - 100 $29.44 1000 $29.14 10000 $29.14	Buy Now
TTI	IXBX25N250	Tube			300	1 - 10 - 100 - 1000 $29.73 10000 $29.73	Buy Now
TME	IXBX25N250				1	1 $39.8 10 $33.36 100 $32.22 1000 $32.22 10000 $32.22	Get Quote
Littelfuse Inc IXBX25N250 Transistor, Igbt, 2.5Kv, 55A, Plus247; Continuous Collector Current:55A; Collector Emitter Saturation Voltage:3.3V; Power Dissipation:300W; Collector Emitter Voltage Max:2.5Kv; No. Of Pins:3Pins; Operating Temperature Max:150°C Rohs Compliant: Yes \|Littelfuse IXBX25N250
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXBX25N250	Bulk			1	1 $38.15 10 $33.64 100 $29.13 1000 $29.13 10000 $29.13	Buy Now
RS	IXBX25N250	Bulk		8 Weeks	30	1 - 10 - 100 $45.98 1000 $45.98 10000 $45.98	Get Quote
IXYS Integrated Circuits Division IXBX25N250 IGBT DIS.DIODE SINGLE 25A 2500V BIMOSFET PLUS247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ozdisan Elektronik	IXBX25N250					1 $51.40055 10 $51.40055 100 $48.0379 1000 $48.0379 10000 $48.0379	Get Quote

IXBX25N250 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXBX25N250		IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 2500V 55A 300W PLUS247		Original	PDF

IXBX25N250 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
25N250 Abstract: IXBX25N250 Text: Preliminary Technical Information IXBX25N250 High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 2500V IC90 = 25A VCE sat ≤ 3.3V PLUS247TM (IXBX) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	IXBX25N250 PLUS247TM 25N250 IXBX25N250	PDF
Untitled Abstract: No abstract text available Text: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 2500V IC90 = 25A VCE sat ≤ 3.3V IXBX25N250 Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 2500 V VGES Continuous ± 20	Original	IXBX25N250 25N250	PDF
IXBX25N250 Abstract: 25N250 ds100044 Text: IXBX25N250 High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 2500V IC90 = 25A VCE sat ≤ 3.3V Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 2500 V VGES Continuous ± 20	Original	IXBX25N250 25N250 IXBX25N250 ds100044	PDF
IXGF30N400 Abstract: IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250 Text: IXYSPOWER P R O D U C T B R I E F Efficiency Through Technology Very High Voltage Discrete Portfolio From the recognized industry leader for discrete semiconductor products above 2500V august 2009 OVERVIEW As the new “Green-World Economy” unfolds, Design Engineers	Original	O-264 IXBX55N300 PLUS247 IXBF55N300 O-268 O-247 IXGF30N400 IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250	PDF
schematic diagram atx Power supply 500w Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455	Original	P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS	PDF
IXBK55N300 Abstract: IXBF55N300 IXBH32N300 BiMOSFET radar system with circuit diagram IXBH20N300 IXBH12N300 bimos high speed bridge rectifier IXBH2N250 Text: POWER Efficiency Through Technology N E W PR O D U C T BR I E F High Voltage BiMOSFETsTM IXYS expands its bimosfet tm porTfolio to 3kv with the introduction of its new hv bimosfetsTM september 2009 OVERVIEW IXYS High Voltage BiMOSFETsTM are a unique class of high gain devices featuring blocking	Original	E153432) com/IXAN0022 IXBK55N300 IXBF55N300 IXBH32N300 BiMOSFET radar system with circuit diagram IXBH20N300 IXBH12N300 bimos high speed bridge rectifier IXBH2N250	PDF