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    IXBX25N250 Search Results

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    IXBX25N250 Price and Stock

    IXYS Corporation IXBX25N250

    IGBT 2500V 55A PLUS247-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXBX25N250 Tube 177 1
    • 1 $43.43
    • 10 $32.529
    • 100 $29.7295
    • 1000 $29.7295
    • 10000 $29.7295
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    Mouser Electronics IXBX25N250
    • 1 $42.99
    • 10 $40.4
    • 100 $35.36
    • 1000 $33.63
    • 10000 $33.63
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    Future Electronics IXBX25N250 Tube 44 Weeks 300
    • 1 -
    • 10 -
    • 100 $29.45
    • 1000 $29.15
    • 10000 $29.15
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    TTI IXBX25N250 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $29.73
    • 10000 $29.73
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    TME IXBX25N250 1
    • 1 $42.29
    • 10 $35.45
    • 100 $34.23
    • 1000 $34.23
    • 10000 $34.23
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    Littelfuse Inc IXBX25N250

    Transistor, Igbt, 2.5Kv, 55A, Plus247; Continuous Collector Current:55A; Collector Emitter Saturation Voltage:3.3V; Power Dissipation:300W; Collector Emitter Voltage Max:2.5Kv; No. Of Pins:3Pins; Operating Temperature Max:150°C Rohs Compliant: Yes |Littelfuse IXBX25N250
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark IXBX25N250 Bulk 1
    • 1 $42.14
    • 10 $38.73
    • 100 $35.31
    • 1000 $32.96
    • 10000 $32.96
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    IXYS Integrated Circuits Division IXBX25N250

    IGBT DIS.DIODE SINGLE 25A 2500V BIMOSFET PLUS247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXBX25N250
    • 1 $54.52966
    • 10 $54.52966
    • 100 $50.9623
    • 1000 $50.9623
    • 10000 $50.9623
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    IXBX25N250 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXBX25N250 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 2500V 55A 300W PLUS247 Original PDF

    IXBX25N250 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    25N250

    Abstract: IXBX25N250
    Text: Preliminary Technical Information IXBX25N250 High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 2500V IC90 = 25A VCE sat ≤ 3.3V PLUS247TM (IXBX) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXBX25N250 PLUS247TM 25N250 IXBX25N250

    Untitled

    Abstract: No abstract text available
    Text: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 2500V IC90 = 25A VCE sat ≤ 3.3V IXBX25N250 Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 2500 V VGES Continuous ± 20


    Original     		PDF IXBX25N250 25N250

    IXBX25N250

    Abstract: 25N250 ds100044
    Text: IXBX25N250 High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 2500V IC90 = 25A VCE sat ≤ 3.3V Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 2500 V VGES Continuous ± 20


    Original     		PDF IXBX25N250 25N250 IXBX25N250 ds100044

    IXGF30N400

    Abstract: IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250
    Text: IXYSPOWER P R O D U C T B R I E F Efficiency Through Technology Very High Voltage Discrete Portfolio From the recognized industry leader for discrete semiconductor products above 2500V august 2009 OVERVIEW As the new “Green-World Economy” unfolds, Design Engineers


    Original     		PDF O-264 IXBX55N300 PLUS247 IXBF55N300 O-268 O-247 IXGF30N400 IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    IXBK55N300

    Abstract: IXBF55N300 IXBH32N300 BiMOSFET radar system with circuit diagram IXBH20N300 IXBH12N300 bimos high speed bridge rectifier IXBH2N250
    Text: POWER Efficiency Through Technology N E W PR O D U C T BR I E F High Voltage BiMOSFETsTM IXYS expands its bimosfet tm porTfolio to 3kv with the introduction of its new hv bimosfetsTM september 2009 OVERVIEW IXYS High Voltage BiMOSFETsTM are a unique class of high gain devices featuring blocking


    Original     		PDF E153432) com/IXAN0022 IXBK55N300 IXBF55N300 IXBH32N300 BiMOSFET radar system with circuit diagram IXBH20N300 IXBH12N300 bimos high speed bridge rectifier IXBH2N250