IW TRANSISTOR Search Results

IW TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

IW TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BC450 Abstract: No abstract text available Text: BC450 PNF SILICON TRANSISTOR « w w w w w w iw iw iw im m w w w w w n n n n n n n n n n n w iw iw iw iw iw w w w w w w w w w w w in n í^ ^ DESCRIPTION P4.68CÛ.18J BC450 is PNP silicon planar transistor designed for use as high voltage driver and output transistor. Particularly	OCR Scan	BC450 300mA 625mW 100mA 100MHz 300/iS.	PDF
O2-A2 Abstract: V61C16 Text: iw* VITELIC V61C16 FAMILY HIGH PERFORMANCE LOW POWER 2 K x 8 BIT CMOS STATIC RAM Description Features m • ■ ■ ■ ■ ■ ■ High Speed • Maximum access time of 45/55/70 ns • Equal access and cycle times Low Power • 200 mW typical operating • 0.5 \|iW typical standby	OCR Scan	V61C16 2048-word 500mV V61C16 O2-A2	PDF
KD 334 Abstract: No abstract text available Text: SGS-THOMSON BCW30 iW SMALL SIGNAL PNP TRANSISTORS Type M arking BC W 30 C2 SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING ciR currs LOW LEVEL AUDIO AMPLIFICATION AND SWITCHING INTERNAL SCHEMATIC DIAGRAM	OCR Scan	BCW30 KD 334	PDF
Untitled Abstract: No abstract text available Text: SGS-THOMSON 2N6059 iW SILICON NPN POWER DARLINGTON TRANSISTOR . . • . ■ ■ SGS-THOMSON PREFERRED SALESTYPE HIGH GAIN NPN DARLINGTON HIGH CURRENT HIGH DISSIPATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE A PP LICA TIO N S i LINEAR AND SWITCHING INDUSTRIAL	OCR Scan	2N6059 2N6059	PDF
Untitled Abstract: No abstract text available Text: 2SA1426 TOSHIBA 2SA1426 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. • • • High hpE : hjrE = 100~320 IW Output Applications. Complementary to 2SC3666. 7 .1 MAX MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	2SA1426 2SC3666.	PDF
2SC2641 Abstract: 10ID Text: TOSHIBA 2SC2641 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2641 Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS Output Power : Po = 6W Min. (f = 470MHz, V e e = 12.6V, Pi = IW) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT	OCR Scan	2SC2641 470MHz, 961001EAA2' 2SC2641 10ID	PDF
Untitled Abstract: No abstract text available Text: j à s t Æ Ê T * c g iw c ii H»nilr«nfliirffir coro. CJD122 NPN CJD127 PNP flnWlIII^NniVBwWSwl COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR DftKI!" g8FW DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD122, CJD127 types are Complementary Silicon Power Darlington Transistors manufactured	OCR Scan	CJD122 CJD127 CJD122, CJD122) 10VSlE CJD127)	PDF
Untitled Abstract: No abstract text available Text: Afa Iw V f Satellite C om m unications Power Transistor PH 1600-1.5 1.5 Watts, 1.55-1.65 GHz Features Outline Drawing • CW Operation • Internal Impedance Matching • Common Base Configuration • Multilayer Metal / Ceramic Package • Gold Metallization System	OCR Scan	00012L	PDF
3gg22 Abstract: itt 2222 ITT 2222 A Philips 809 08003 mcb882 BLF277 sot-119 Q03GG1 MCB86 Text: 003001Ô Philips Semiconductors TST IW A P X Product specification VHF power MOS transistor BLF277 N AMER PHILIPS/DISCRETE FE A T U R E S b^E ]> PIN CONFIGURATION • High power gain • Easy power control • Gold metallization ensures excellent reliability	OCR Scan	tibS3c131 Q03GG1Ã BLF277 OT119 MBA379 MC0B85 3gg22 itt 2222 ITT 2222 A Philips 809 08003 mcb882 BLF277 sot-119 Q03GG1 MCB86	PDF
Untitled Abstract: No abstract text available Text: BF821 BF823 SILICON EPITAXIAL TRANSISTORS P-N-P transistors Marking BF821 = IW BF823 = ÎY PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _J.0_ 2.8 0.14 Ö.09 0.48 0.38 0.70 0.50 3 Pin configuration 1.4 2.6 1 = BASE 2 = EMITTER 3 = COLLECTOR 1.2 2.4 R0.1 .004 '	OCR Scan	BF821 BF823 6F821 G0G07flS	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN Silicon MMBT6428LT1 MMBT6429LT1 COLLECTOR 3 % EMITTER 1 iW 2 MAXIMUM RATINGS Symbol 6428LT1 6429LT1 Unit C ollector-Em itter Voltage Rating VCEO 50 45 Vdc C o lle c to r-B a s e Voltage VCBO 60	OCR Scan	MMBT6428LT1 MMBT6429LT1 6428LT1 6429LT1 OT-23 O-236AB) BT6429LT1	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA VHF/UHF Transistor MMBT918LT1 NPN Silicon COLLECTOR 3 2 EMITTER MAXIMUM RATINGS 1% iW 2 Rating Symbol Value Unit CoHector-Emitter Voltage VCEO 15 Vdc C ollector-B ase Voltage VCBO 30 Vdc E m itter-B ase Voltage vebo 3.0	OCR Scan	MMBT918LT1 -236A	PDF
15D transistor Abstract: 2DI75M-050 1S120 yv-10 Text: 2DI75M-050 75A % ± '< r7-*:ï>n.-)V IW fé 'tffè : Outline Drawings POWER TRANSISTOR MODULE Features High DC Current Gain ¡ ft& T A v+ 'sV High Speed Switching IffliÊ : A pplications ÿ lÏÏ'f> '< —9 General Purpose Inverter Uninterruptible Power Supply	OCR Scan	2DI75M-050 I95t/R89) Shl50 15D transistor 1S120 yv-10	PDF
Untitled Abstract: No abstract text available Text: N AUER PHXLIPS/DISCRETE ooa7Dao 4 fl?D D y v r « a IW T - Z h o l PLASTIC RF TRANSISTORS INSTRUMENTATION' COMMUNICATIONS • Wideband Preamplifiers Oscilloscopes • Spectrum Analyzers ^ Frequency .Counters •' •VHF/UHF Amplifiers • Log Amplifiers /c-» CATV/MATV Amplifiers	OCR Scan	T-PACK-SOT-37 OT-37 BFQ51 OT-103 STUD-TO-117 OT-122	PDF

buy48 Abstract: No abstract text available Text: SGS-THOMSON BUY48 iW SILICON NPN TRANSISTOR . . • . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS i GENERAL PURPOSE SWITCHING C 3 DESCRIPTION 2 The BUY48 is a silicon epitaxial planar NPN transistor in jedecTO-39 metal case. It is used in	OCR Scan	BUY48 BUY48 jedecTO-39	PDF
transistor 1107 Abstract: 1109L Text: TOSHIBA RN1107-RN1109 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RM11D7mg •RM R« M « ■w 1 ■ i■n iw r a g ■ ■v 1 ■ in ■ q v ■* ■V ■ ■ SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS.	OCR Scan	RN1107-RN1109 RM11D7 RN2107~ RN1107 RN1108 RN1109 transistor 1107 1109L	PDF
str f 6238 Abstract: XS800NS Frequency Locked Loop FLL DC Motor Speed Controller Text: 5 7 . SGS-THOMSON L6238 iW SENSORLESS SPINDLE MOTOR CONTROLLER PRODUCT PREVIEW 2.5A, THREE-PHASE OUTPUT DRIVE PRECISION DIGITAL PLL FULLY-INTEGRATED ALIGN + GO START-UP ALGORITHM D IG ITALBEM F PROCESSING MASTER/SLAVE SYNCHRONIZATION BIDIRECTIONAL SERIAL PORT	OCR Scan	L6238 L6238 str f 6238 XS800NS Frequency Locked Loop FLL DC Motor Speed Controller	PDF
2-7D101A Abstract: 2SA1426 2SC3666 Text: TOSHIBA 2SA1426 2 S A1 426 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. • • • High hpE : h]?E —100~320 IW Output Applications. Complementary to 2SC3666. 7.1 MAX 2.7MAX M A X IM U M RATINGS (Ta = 25°C)	OCR Scan	2SA1426 2SC3666. 2-7D101A 2SA1426 2SC3666	PDF
transistor fn 155 Abstract: No abstract text available Text: HMSn'wìnt-t r* «nnS 140Commerce Drive iW llC f U S B n it Montgomeryville, PA18936-1013 Tei: 215 631-9840 F?»#>&s&P&nüerùtt£>v SD 1143 RF & MICROWAVE TRANSISTORS 130. 230MHz FM MOBILE APPLICATIONS FM CLASS C TRANSISTOR FREQUENCY 175MHz VOLTAGE 12.5V	OCR Scan	230MHz 175MHz 12Qpi SD1143 transistor fn 155	PDF
Gex DIODE Abstract: No abstract text available Text: 6D I50M -050 50 a IW f i T t i i • Outline Drawings POWER TRANSISTOR MODULE ■ t t f t : Features • SfthpE • High DC Current Gain High Speed Switching : Applications • illffl- fV - 'i—^ General Purpose Inverter • mznwM Uninterruptible Power Supply	OCR Scan	l95t/R89 Gex DIODE	PDF
C5001 Abstract: No abstract text available Text: SGS-THOMSON 2N5154 iW SILICON NPN TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR A PP LICA TIO N S • GENERAL PURPOSE SWITCHING D ESCRIP TIO N The 2N5154 is a silicon epitaxial planar NPN transistors in Jedec TO-39 metal case intended tor use in switching applications.	OCR Scan	2N5154 2N5153. C5001	PDF
MRD810 Abstract: No abstract text available Text: M R D 8 1 0 silicon 35 VOLTS NPN SILICON PHOTO TRANSISTOR NPN SILICON PHOTO TRANSISTOR 2 5 0 M IL L IW A T T S . . . designed fo r application in card and tape readers, optica! char acter recognition, shaft encoders, industrial inspection, processing and	OCR Scan	MRD810 MRD810	PDF
ff 0401 Abstract: No abstract text available Text: SGS-THOMSON 2N5657 iW SILICON NPN TRANSISTOR . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR D ESCRIP TIO N The 2N5657 is a silicon epitaxial-base NPN transistor in Jedec SOT-32 plastic package. It is intended tor use output amplitiers, low current, high voltage converters and AC line relays.	OCR Scan	2N5657 OT-32 ff 0401	PDF
2N 5682 Abstract: transistor 2n 568 Text: SGS-THOMSON 2N5681 2N5682 iW SILICON NPN TRANSISTOR . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR A PP LICA TIO N S • GENERAL PURPOSE SWITCHING ■ GENERAL PURPOSE AMPLIFIERS ^ 3 D ESCRIP TIO N The 2N5681, 2N5682 are high voltage silicon epitaxial planar NPN transistors in Jedec TO-39	OCR Scan	2N5681 2N5682 2N5681, 2N5682 2N5679 2N5680 2N 5682 transistor 2n 568	PDF

IW TRANSISTOR Search Results

IW TRANSISTOR Result Highlights (5)

IW TRANSISTOR Datasheets Context Search

BC450

O2-A2

KD 334

Untitled

Untitled

2SC2641

Untitled

Untitled

3gg22

Untitled

Untitled

Untitled

15D transistor

Untitled

buy48

transistor 1107

str f 6238

2-7D101A

transistor fn 155

Gex DIODE

C5001

MRD810

ff 0401

2N 5682