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    2SC3666 Search Results

    2SC3666 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC3666 Toshiba 2SC3666 - TRANSISTOR 1000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-7D101A, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SC3666 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3666 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC3666 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC3666 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC3666 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC3666 Toshiba Silicon NPN transistor for audio power amplidier applications Scan PDF
    2SC3666 Toshiba TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) Scan PDF
    2SC3666-O Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3666O Toshiba Silicon NPN Epitaxial Type Transistor Scan PDF
    2SC3666-O Toshiba Audio Power Amplifier Apps Scan PDF
    2SC3666-Y Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3666Y Toshiba Silicon NPN Epitaxial Type Transistor Scan PDF
    2SC3666-Y Toshiba Audio Power Amplifier Apps Scan PDF

    2SC3666 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2-7D101A

    Abstract: 2SA1426 2SC3666 A1426 v30010
    Text: 2SA1426 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1426 Audio Power Amplifier Applications • High hFE: hFE = 100 to 320 • 1-W output applications • Complementary to 2SC3666. Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF 2SA1426 2SC3666. 2-7D101A 2SA1426 2SC3666 A1426 v30010

    c3666

    Abstract: 2SC3666 2-7D101A
    Text: 2SC3666 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3666 Audio Power Amplifier Applications • High DC current gain: hFE (1) = 100 to 320 • High power dissipation: PC = 1000 mW Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF 2SC3666 c3666 2SC3666 2-7D101A

    c3666

    Abstract: 2-7D101A 2SC3666
    Text: 2SC3666 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3666 Audio Power Amplifier Applications • High DC current gain: hFE (1) = 100 to 320 • High power dissipation: PC = 1000 mW Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol


    Original     		PDF 2SC3666 c3666 2-7D101A 2SC3666

    C3666

    Abstract: 2-7D101A 2SC3666
    Text: 2SC3666 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3666 ○ 低周波電力増幅用 単位: mm • 直流電流増幅率が高い。 • 許容コレクタ損失が大きい。 : PC = 1000 mW : hFE(1) = 100~320 絶対最大定格 (Ta = 25°C)


    Original     		PDF 2SC3666 2-7D101A C3666 2-7D101A 2SC3666

    C3666

    Abstract: 2-7D101A 2SC3666
    Text: 2SC3666 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3666 Audio Power Amplifier Applications • High DC current gain: hFE (1) = 100 to 320 • High power dissipation: PC = 1000 mW Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF 2SC3666 C3666 2-7D101A 2SC3666

    Untitled

    Abstract: No abstract text available
    Text: 2SC3666 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3666 Audio Power Amplifier Applications • High DC current gain: hFE (1) = 100 to 320 • High power dissipation: PC = 1000 mW Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF 2SC3666 2-7D101A

    2-7D101A

    Abstract: 2SA1426 2SC3666 A1426
    Text: 2SA1426 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1426 Audio Power Amplifier Applications • High hFE: hFE = 100 to 320 • 1-W output applications • Complementary to 2SC3666. Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF 2SA1426 2SC3666. 2-7D101A 2SA1426 2SC3666 A1426

    Untitled

    Abstract: No abstract text available
    Text: 2SA1426 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1426 Audio Power Amplifier Applications • High hFE: hFE = 100 to 320 • 1-W output applications • Complementary to 2SC3666. Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF 2SA1426 2SC3666. 2-7D101A

    C3666

    Abstract: 2-7D101A 2SC3666
    Text: 2SC3666 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3666 ○ 低周波電力増幅用 単位: mm • 直流電流増幅率が高い。 • 許容コレクタ損失が大きい。 : PC = 1000 mW : hFE = 100~320 絶対最大定格 (Ta = 25°C)


    Original     		PDF 2SC3666 2-7D101A 20070701-JA C3666 2-7D101A 2SC3666

    a1426

    Abstract: V30010 2-7D101A 2SA1426 2SC3666
    Text: 2SA1426 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1426 Audio Power Amplifier Applications • High hFE: hFE = 100 to 320 • 1-W output applications • Complementary to 2SC3666. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol


    Original     		PDF 2SA1426 2SC3666. a1426 V30010 2-7D101A 2SA1426 2SC3666

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3666 AUDIO POWER AMPLIFIER APPLICATIONS. • High DC Current Gain: MAXIMUM RATINGS Unit in mm hpE=100~320 (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage v CBO 30 V Collector-Emitter Voltage VCEO


    OCR Scan     		PDF 2SC3666 100mA 800mA 800mA,

    Untitled

    Abstract: No abstract text available
    Text: 2SA1426 TOSHIBA 2SA1426 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. • • • High hpE : hjrE = 100~320 IW Output Applications. Complementary to 2SC3666. 7 .1 MAX MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SA1426 2SC3666.

    2-7D101A

    Abstract: 2SC3666
    Text: TO SH IBA 2SC3666 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3666 Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS • High DC Current Gain : hpE (l) = 100~320 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage


    OCR Scan     		PDF 2SC3666 2-7D101A 2SC3666

    2-7D101A

    Abstract: 2SC3666
    Text: TO SH IBA 2SC3666 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3666 Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS • High DC Current Gain : hpE (l) = 100~320 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage


    OCR Scan     		PDF 2SC3666 2-7D101A 2SC3666

    2-7D101A

    Abstract: 2SA1426 2SC3666
    Text: TOSHIBA 2SA1426 2 S A1 426 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. • • • High hpE : h]?E —100~320 IW Output Applications. Complementary to 2SC3666. 7.1 MAX 2.7MAX M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SA1426 2SC3666. 2-7D101A 2SA1426 2SC3666

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC3666 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3666 Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS • High DC Current Gain : hpE (l) = 100~320 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage


    OCR Scan     		PDF 2SC3666

    2sc3667

    Abstract: 2SD1590 2SD1961 2SC269 2S01207 2SC4351 2SD1319 2SD1565 2SC2274 2SC2690A
    Text: 254 - m % M % tt T y p e No. Mantif. SANYO 2SD 1918 □— A 2SC4027 2SD 1919 □— A 2SD1246 2SD 1920 1921 NEC 2SC2690A 2SC3666 2SD1330 2SC3243 2SC3665 2SD639 2SC3581 B 2SD 1925 B tL 2SD 1926 B 2 2SD 1927 B 2SD 1928 B 2SD 1929 * □— A 2SC4169 2SU1Y00


    OCR Scan     		PDF 2SD1918 2SD1919 2SD1920 2SC4027 2SD1246 2SD545 2SC2274 2SC3667 2SC3666 2SC3665 2SD1590 2SD1961 2SC269 2S01207 2SC4351 2SD1319 2SD1565 2SC2274 2SC2690A

    2sD1555

    Abstract: 2SD4391 2SM583 2SD1483 2SD1554 2SD1994A D1866 2SD1164 2SD1347 2SD2404
    Text: - 252 - m tt £ T y p e No. € M a nuf. Z * SANYO He ^ TOSHIBA 2SD 1850 tfi T 2SD 1851 H. j=É 2SD 1852 = & 2SD 1 853 ^ H # 2S D 1854 H £ 2S D 1855 O — A 2SC3746 oori • ]occ <¡0 □— A □— A □— A 2SDÌ826 2SD400 2SC3666 2 S D 1857 i m NEC B


    OCR Scan     		PDF 2SD1850 2SD1851 2SD1852 2SD1886 2SC2532 2SD1478 2SD892 2SD1698 2SD1697 2SD893 2sD1555 2SD4391 2SM583 2SD1483 2SD1554 2SD1994A D1866 2SD1164 2SD1347 2SD2404

    2-7D101A

    Abstract: 2SC3666
    Text: TOSHIBA 2SC3666 TO SH IBA TRANSISTO R SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3666 Unit in mm AU DIO POW ER AM PLIFIER APPLICATIO N S • High DC Current Gain : hpE (l) = 100~320 MAXIMUM RATINGS (Ta= 2 5 °C ) CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage


    OCR Scan     		PDF 2SC3666 2-7D101A 2SC3666

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3666 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3666 AUDIO POWER AMPLIFIER APPLICATIONS U nit in mm ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL TEST CONDITION CHARACTERISTIC Collector Cut-off Current VCB = 30V, Ie = 0 ICBO


    OCR Scan     		PDF 2SC3666 100mA 800mA 800mA, 100mA

    Untitled

    Abstract: No abstract text available
    Text: 2SA1426 T O SH IB A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 426 Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. • • • High hp g : hpE = 100—320 1W Output Applications. Complementary to 2SC3666. 7,1 m a x S. 7 MAS MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SA1426 2SC3666.

    2-7D101A

    Abstract: 2SC3666
    Text: TOSHIBA 2SC3666 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3666 Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS • High DC Current Gain : (1) = 100~320 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage


    OCR Scan     		PDF 2SC3666 2-7D101A 2SC3666

    Untitled

    Abstract: No abstract text available
    Text: 2SA1426 TO SH IBA 2SA 1426 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS • • • High hpE • hpE - 100~320 1 W Output Applications. Complementary to 2SC3666. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF 2SA1426 2SC3666.

    2-7D101A

    Abstract: 2SA1426 2SC3666
    Text: 2SA1426 TO SH IBA 2SA 1426 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS • • • High hpE • hpE - 100~320 1 W Output Applications. Complementary to 2SC3666. MAXIMUM RATINGS (Ta = 25°C) SYMBOL


    OCR Scan     		PDF 2SA1426 SA142 2SC3666. 2-7D101A 2-7D101A 2SA1426 2SC3666