Untitled
Abstract: No abstract text available
Text: ¿57 TYP E SGS-THOMSON ¡UÈTO « N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR V STP5NA60 STP5NA60FI STP5NA60 STP5NA60FI dss 600 V 600 V R DS on Id < 1.6 a < 1.6 a 5.3 A 3.4 A • TYPICAL RDS(on) = 1 35 Q. . ± 30V GATE TO SOURCE VOLTAGE RATING
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STP5NA60
STP5NA60FI
STP5NA60/FI
ISQWATT220
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Untitled
Abstract: No abstract text available
Text: ¿ 5 SGS-THOMSON ¡mera « 7 STP10NA40 s t p i 0NA40FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E S TP10NA40 S TP10N A40FI V dss RDS on Id 400 V 400 V < 0.55 Q. < 0.55 Q. 10 A 6 A • TYPICAL RDS(on) = 0.46 Q. . ± 30V GATE TO SOURCE VOLTAGE RATING
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STP10NA40
0NA40FI
TP10NA40
TP10N
A40FI
STP10NA40/FI
ISQWATT220
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Untitled
Abstract: No abstract text available
Text: S G S -T H O M S O N ¡m e ra « ¿ 5 7 S T P 3 N 100 S T P 3 N 1 0 0 FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V S T P 3 N 1 00 S T P 3 N 1 00FI . • . . . . R DS on dss 1000 V 1000 V Id < 5 0 < 5 0 3.5 A 2 A AVALANCHE RUGGED TECHNOLOGY
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STP3N100/FI
ISQWATT220
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Untitled
Abstract: No abstract text available
Text: ¿57 B U Z11 B U Z 1 1 FI S G S -T H O M S O N ¡U È T O « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYP E V dss BUZ11 BUZ11FI 50 V 50 V RDS on < 0.04 < 0.04 a a Id A 21 A 36 • TYPICAL RDS(on) = 0.03 Q . . AVALANCHE RUGGED TECHNOLOGY ■ 100% AVALANCHE TESTED
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BUZ11
BUZ11FI
BUZ11/FI
ISQWATT220
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Untitled
Abstract: No abstract text available
Text: VN B10N07/K10N07FM VNP10N07FI/VNV10N07 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VN B10N 07 VNK1 0 N 07 F M VNP1 0 N 0 7 F I VN V10N 07 Vclamp 70 70 70 70 V V V V R D S o n 0.1 0.1 0.1 0.1 Q. a n Cl 11im 10 10 10 10 A A A A . . . . . . LINEAR CURRENT LIMITATION
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B10N07/K10N07FM
VNP10N07FI/VNV10N07
O-263
VNB10N07,
VNK10N07FM,
VNP10N07FI
VNV10N07
Vertical10N07FI-VNV10N07
PowerSO-10
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Untitled
Abstract: No abstract text available
Text: ¿57 TYP E MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V MTP3N60 MTP3N60FI • . ■ . . SGS-THOMSON ¡m era « dss 600 V 600 V R DS on Id < 2.5 Q < 2.5 Q 3.9 A 2.5 A TYPICAL RDS(on) = 2 0 , AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED
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MTP3N60
MTP3N60FI
MTP3N60/FI
ISQWATT220
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Untitled
Abstract: No abstract text available
Text: ¿57 S G S -T H O M S O N ¡m e ra « M TP3055E M T P 3 0 5 5 E FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYP E V MTP3055E M TP3055EFI dss 60 V 60 V R DS on < 0.15 < 0.15 a a Id 14 A 10 A • TYPICAL RDS(on) = 0.1 Q . AVALANCHE RUGGED TECHNOLOGY
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TP3055E
MTP3055E
TP3055EFI
MTP3055E/FI
ISQWATT220
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Untitled
Abstract: No abstract text available
Text: ¿57 TYP E STP20N 10L S TP20N10LFI SGS-THOMSON ¡m era « STP20N10L STP20N10LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR V dss RDS on Id 100 V 100 V < 0.12 a < 0.12 a 20 A 12 A • TYPICAL RDS(on) = 0.09 Q . . AVALANCHE RUGGED TECHNOLOGY
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STP20N
TP20N10LFI
STP20N10L
STP20N10LFI
ISOWATT220
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Untitled
Abstract: No abstract text available
Text: ¿57 TYP E STP36N 05L S TP36N05LFI SGS-THOMSON STP36N06L STP36N06LFI ¡mera « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss RDS on Id 60 V 60 V < 0.04 a < 0.04 a 36 A 21 A . TYPICAL R DS(on) = 0.033 Q . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED
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STP36N
TP36N05LFI
STP36N06L
STP36N06LFI
STP36N06L/FI
ISQWATT220
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tp3055
Abstract: MTP3055EFI TP3055E MTP3055E TP3055EFI
Text: Gì SCS-THOMSON MTP3055E MTP3055EFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE MTP3055E M TP3055EFI V d ss R o S on Id 60 V 60 V 0.1 5 Q 0.15 Si 14 A 10 A AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C
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MTP3055E
TP3055EFI
MTP3055EFI
O-220
ISOWATT220
ISQWATT220
MTP3055E/FI
tp3055
MTP3055EFI
TP3055E
TP3055EFI
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IRf 334
Abstract: IRF 830 TRANSISTOR irf 830 Fi 830 application note using irf 830 diode on 832 irf ballast 831 transistor irf 832 IRF832
Text: SGS-THOMSON üLKgirœraOÊi IRF 830/FI-831/FI IRF 832/FI-833/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDSS IRF830 IRF830FI 500 V 500 V IRF831 IRF831FI 450 V 450 V IRF832 IRF832FI 500 V 500 V IRF833 IRF833FI 450 V 450 V ^DS on 1.5 fi 1.5 fi
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830/FI-831/FI
832/FI-833/FI
IRF830
IRF830FI
IRF831
IRF831FI
IRF832
IRF832FI
IRF833
IRF833FI
IRf 334
IRF 830 TRANSISTOR
irf 830
Fi 830
application note using irf 830
diode on 832
irf ballast
831 transistor
irf 832
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irf540
Abstract: IRF540FI irf540 circuit diagram IRF540 Rg
Text: SGS-THOMSON ¿7 # KLU 1T^ o [MD(gS IRF540 IRF540FI N -C H A N NELEN HAN C E M E NT MODE POWER MOS TRANSISTORS TYPE IR F 5 4 0 IR F 5 4 0 F I V dss RDS(on) Id 100 V 100 V 0 .0 7 7 n 0 .0 7 7 £2 28 A 16 A . AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED
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IRF540
IRF540FI
GC36230
IRF540/FI
GC36B60
GC36270
IRF540FI
irf540 circuit diagram
IRF540 Rg
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IRFP 620
Abstract: transistor 623 ir 623 p bem diode IRFP P CHANNEL IRF 024
Text: Æ 7 S C S IRF 620/FI-621/FI IRF 622/FI-623/FI T H O M S O N N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^DS on IRF620 IRF620FI 200 V 200 V 0.8 !2 0.8 Q 5 A 4 A IRF621 IRF621FI 150 V 150 V 0.8 Q 0.8 S2 5 A 4 A IRF622 IRF622FI 200 V 200 V
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620/FI-621/FI
622/FI-623/FI
IRF620
IRF620FI
IRF621
IRF621FI
IRF622
IRF622FI
IRF623
IRF623FI
IRFP 620
transistor 623
ir 623 p
bem diode
IRFP P CHANNEL
IRF 024
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STLT20FI
Abstract: STLT20
Text: STLT20 STLT19 Æ 7 SGS-THOMSON !10 g m i ( g r a [ * S N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORS P R E LIM IN A R Y D A TA TYPE STLT20 STLT20FI STLT19 STLT19FI V DSS ^DS(on 60 60 50 50 0.15 n 0.15 fi 0.15 0 0.15 fi V V V V 15 10
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STLT20
STLT19
STLT20FI
STLT19
STLT19FI
O-220
ISOWATT22Qotal
500ms
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RE528
Abstract: tp2n60fi TP2N60
Text: SGS-THOMSON STP2N60 STP2N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE RoS on V d ss S TP2N 60 S TP2N 60FI Id a 600 V 3 .5 600 V 3 .5 L I 2 .9 A 2 .2 A . AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C
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STP2N60
STP2N60FI
O-220
ISOWATT220
STP2N60
STP2N60/FI
RE528
tp2n60fi
TP2N60
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IRF640FI
Abstract: GC525
Text: ¿57 S G S -T H O M S O N ¡m e ra « IR F 6 4 0 IR F 6 4 0 FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYP E V IRF640 IRF640FI dss 200 V 200 V R DS on < 0.18 < 0.18 a a Id 18 A 10 A . TYPICAL RDs(on) = 0.145 Q . . AVALANCHE RUGGED TECHNOLOGY
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IRF640
IRF640FI
O-220
ISOWATT220
IRF640FI
IRF640/FI
ISOWATT22Q
GC525
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stpr 10 cf
Abstract: stpr62oct
Text: 7/ SGS-THOMSON ra«M S»iD(S STPR61OCT/CF STPR 62OCT/CF ULTRA FAST RECOVERY RECTIFIER DIODES . SUITED FOR SMPS • LOW LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIME . HIGH SURGE CURRENT CAPABILiTY ■ HIGH AVALANCHE ENERGY CAPABILITY A1 N- a2 ^ H- DESCRIPTION
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STPR61OCT/CF
62OCT/CF
ISOWATT220AB,
T0220AB
ATT22
STPR610CT
STPR620CT
STPR610CF
STPR620CF
stpr 10 cf
stpr62oct
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VB408
Abstract: No abstract text available
Text: VB408 / VB408B VB408-1 / VB408FI HIGH VOLTAGE LINEAR REGULATOR POWER I.C. TA R G ET DATA TYPE ^ V IN ,O U T h im VoUT 400 V 40 mA 1.25 to V |N-30 V VB408 VB408-1 VB408FI VB408B • INPUT VOLTAGE UP TO 400 V DC OR 285 V RMS RECTIFIED ■ OUTPUT VOLTAGE ADJUSTABLE FROM 1.25
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VB408
VB408B
VB408-1
VB408FI
VB408FI
VB408,
VB408B,
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TC1100C
Abstract: 380n
Text: rz T ^7# SGS-THOMSON M » iL iO T (S iO O S DTV64D/F (CRT HORIZONTAL DEFLECTION) HIGH VOLTAGE DAMPER DIODE MA I N P R O D U C T S C H A R A C T E R I S T I C S I f (AV) 6A V rrm 1500V Vf (max) 1 . 4V F E A T UR E S AND B ENE FIT S • Very fast recovery diode allows HF H. deflection.
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DTV64D/F
56-82kHz
ISOWATT220AC)
T0220AC
ISOWATT22
DTV64D
DTV64F
64kHz
TC1100C
380n
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diode sg 46
Abstract: SG DIODE MARKING diode sg 52 IGBT 2000V .50A
Text: £ ÿ j SG S-TH O M SO N n0 œ i l L I 0 ra [iïlBCi S T T A 5 1 2 D /F TURB O SW ITC H ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 5A V rrm 1200V (typ) 45ns (max) 2.0V trr Vf PR ELIM IN A R Y DATA FEATURES AND BENEFITS
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STTA512D
ISOWATT220AC
STTA512F
diode sg 46
SG DIODE MARKING
diode sg 52
IGBT 2000V .50A
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Rectifier GE 019-4
Abstract: STPR10
Text: STPR1020CT STPR1020CF ULTRA FAST RECOVERY RECTIFIER DIODES FEATURES • SUITED FOR SMPS ■ LOW LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIME ■ HIGH SURGE CURRENT CAPABILITY ■ HIGH AVALANCHE ENERGY CAPABILITY A1 A2 * A2 A1 DESCRIPTION Low cost dual center tap rectifier suited tor switch
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STPR1020CT
STPR1020CF
T0220ABand
ISQWATT220AB,
T0220AB
STPR1020CT
ISQWATT220AB
Rectifier GE 019-4
STPR10
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Untitled
Abstract: No abstract text available
Text: ¿57 TYP E S G S -T H O M S O N ¡m e ra « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V BUZ71A BUZ71AFI BUZ71A b u z 7 1 AFI dss 50 V 50 V R D S o n < 0.12 < 0.12 a a Id 16 A 11 A • TYPICAL RDS(on) = 0.1 Q . . AVALANCHE RUGGED TECHNOLOGY
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BUZ71A
BUZ71AFI
BUZ71A/BUZ71AFI
ISQWATT220
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON ¡UÈTO « ¿ 5 7 STP5NA80 STP5NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E V STP5NA80 STP5NA80FI dss 800 V 800 V R DS on Id < 2.4 a < 2.4 a 4.7 A 2.8 A • TYPICAL RDS(on) = 1 8 Q. . ± 30V GATE TO SOURCE VOLTAGE RATING
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STP5NA80
STP5NA80FI
STP5NA80/FI
ISQWATT220
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Untitled
Abstract: No abstract text available
Text: ¿57 S G S -T H O M S O N ¡m e ra « S T P 20 N06 s t p 2 0 N 0 6 FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E STP20N06 S TP20N06FI V dss RDS on Id 60 V 60 V < 0 .085 Q. < 0 .085 Q. 20 A 13 A • TYPICAL RDS(on) = 0.06 Q . . AVALANCHE RUGGED TECHNOLOGY
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STP20N06
TP20N06FI
STP20N06/FI
ISQWATT220
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