Contextual Info: ¿ 5 SGS-THOMSON ¡mera « 7 TP10NA40 s t p i 0NA40FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E S TP10NA40 S TP10N A40FI V dss RDS on Id 400 V 400 V < 0.55 Q. < 0.55 Q. 10 A 6 A • TYPICAL RDS(on) = 0.46 Q. . ± 30V GATE TO SOURCE VOLTAGE RATING

TP10N

Contextual Info: MOTOROLA Order this document by TP10N40E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP10N40E TMOS E-FET™ High Energy Power FET N-Channel Enhancement-Mode Silicon Gate T his a d va n ce d high v o lta g e T M O S E -F E T is d e s ig n e d to

Contextual Info: SGS-THOMSON RfflDeiE!<s [l[L[ie,n’[KÌ@RDD S$ TP10NB20 TP10NB20FP N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET V TYPE S TP10N B20 TP10N B20FP • . . . . dss 200 V 200 V R D S(on) Id < 0.4 0 Q. < 0.4 0 Cl 10 A 6 A TYPICAL RDS(on) = 0.3 EXTREMELY HIGH dv/dt CAPABILITY

MTP10N10E

Abstract: 221A-06 AN569
Contextual Info: MOTOROLA O rder this docum ent by M TP10N10E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP10N10E TMOS IV Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate T his ad van ced “E” series o f T M O S po w e r M O SFETs is desig ned

TP10N10E

Abstract: transistor Ip
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP10N10EL Logic Level TM O S E -FE T ™ P o w er Field E ffe c t Tran sistor M otorola P re fe rre d D evice N-Channel Enhancement-Mode Silicon Gate This a d va n ce d TM O S p o w e r F E T is d e sig n e d to w ith sta n d high

Contextual Info: TP10NB50 TP10NB50FP N - CHANNEL 500V - 0.55Î2 - 10.6A - TO-220/TO-220FP PowerMESH MOSFET TYPE V dss R D S on Id S TP10N B50 S TP10N B50FP 500 V 500 V < 0.6 0 Q. < 0.6 0 Q. 1 0.6 A 1 0.6 A • . . . . TYPICAL RDS(on) = 0.55 £1 EXTREMELY HIGH dv/dt CAPABILITY

P50N05

Abstract: p50n06 TP3055EL tp50n05e MTP36N06E
Contextual Info: N-Channel v«n n f S >« M ix ' Pd IW IM I MIX) so BUZ11 40 2 -4 30 /O 50 BUZ11A 55 2 -4 26 75 100 BUZ20 200 2 -4 1 3 .5 70 100 BUZ21 85 2 -4 21 75 50 BUZ71 100 2 -4 14 40 50 BUZ71A 120 2 -4 13 40 100 IR F 5 1 0 540 2 -4 5.6 43 100 IR F 5 2 0 270 2 -4 9.2

IGT4E10

Abstract: 2N6976 THOMSON 58E THOMSON DISTRIBUTOR THOMSON DISTRIBUTOR 58e d 2N6975 2N6977 IGTH10N40 IGTH20N40 IGTH20N40A
Contextual Info: THOMSO N/ DISTRIBUTOR SflE D TCSK ^□2 b ñ7 3 □0 QS 714 Insulated-Gate Bipolar Transistors IGBTs N-Channel Enhancement-Mode Conductivity Modulated Power Field-Effect Transistors—IGBTs Optimized for Switching Applications Package M axim um Ratings BV c e s

MTP8N10

Abstract: mtp7n06 mtp12n10 MTP7N15 power mosfets to 204aa MTP5N15 mtp25n10 MTP12P08 MTP3N15 MTH8P20
Contextual Info: POWER TRANSISTORS — TMOS continued V b R(DSS) (Volt*) Min (Ohms) Max (Amp) 500 6 3 DS(on) @ >D Device 450 M TM 2P50 >D(Contl (Amp) Max PD @ TC = 25-C (Watts) Max Package 2 75 2 04AA M TP2P50 220AB M TM 2P45 204AA 220A8 M T P 2P45 200 0.7 4 M TM 8P20 1

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

TER22

Contextual Info: KOA SPEER ELECTRONICS, INC. SS-222 R7 AHA 1/12/04 Multilayer Ceramic Inductors Type MHL CERTIFIED 1. General • ■ ■ ■ ■ Monolithic structure provides high reliability in a wide temperature and humidity range High quality ceramic material and unique manufacturing process provides high Q at high frequency

tdr22

Contextual Info: KOA SPEER ELECTRONICS, INC. SS-222 R5 AHA 6/30/03 Multilayer Ceramic Inductors Type MHL CERTIFIED 1. General • ■ ■ ■ ■ Monolithic structure provides high reliability in a wide temperature and humidity range High quality ceramic material and unique manufacturing process provides high Q at high frequency

TDR15

Abstract: TD18N TD68N TP82N TP68N
Contextual Info: MHL multilayer ceramic inductor features inductors • Monolithic structure provides high reliability in a wide temperature and humidity range • High quality ceramic material and unique manufacturing process provides high Q at high frequency • Standard EIA packages: 1E, 1J, 2A

Contextual Info: KOA SPEER ELECTRONICS, INC. SS-203 R4 AHA 02/05/04 Thin Film Chip Inductors Type KL73 0402 CERTIFIED 1. Scope This specification applies to Thin Film Chip Inductors KL73 1E size produced by KOA Corporation. 2. Type Designation The type designation shall be the following form:

TP10N15L

Abstract: 10N12L 10N15L TO-220AB Package P10N15L TP10N12L TP10N12 158SC
Contextual Info: MOTOROLA SC IME D XSTRS/R F I fc.3 t,?a54 QG1 QD3 ci 0 1 7V 3 7 -1 / MOTOROLA • SEM ICO NDUCTOR TECHNICAL DATA M TM 10N 12L M TM 10N 15L MTP10IM12L M T P 10N 15L Designer's Data Sheet Pow er Field Effect Transistors N-Channel Enhancement-Mode Silicon Gate TMOS

TP10N10

Abstract: mtp10n08 10n08 mtp10n10
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate T M O S T M O S P O W E R FETs 10 A M P E R E S T h e se T M O S P o w e r FETs are d e s ig n e d fo r m e d iu m v o lta g e ,

TP10N25

Contextual Info: MOTOROLA SC CXSTRS/R F bftE D • b3fc.7ES4 GO' i f l TBl 557 « M O T b MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet P o w er Field E ffe c t Tran sistor N-Channel Enhancement M ode Silicon Gate TMOS POWER FET 10 AMPERES RDS on) = 0 « OHM

KL731H

Abstract: TP33N KL731E
Contextual Info: KL73 thin film inductor features Excellent for high frequency applications Low DC resistance and high Q Suitable for reflow and wave soldering Low tolerance ±2% available Small size allows for high density mounting 1H, 1E, 1J, 2A, 2B • Marking: Yellow three-figure on blue protective coating

Contextual Info: KOA SPEER ELECTRONICS, INC. SS-222 R9 AHA 2/09/05 Multilayer Ceramic Inductors Type MHL CERTIFIED CERTIFIED 1. General • ■ ■ ■ ■ Monolithic structure provides high reliability in a wide temperature and humidity range High quality ceramic material and unique manufacturing process provides high Q at high frequency

floating-gate

Abstract: DEB141
Contextual Info: Order this document by EB141/D MOTOROLA SEMICONDUCTOR ENGINEERING BULLETIN EB141 Boost M O SFETs Drive Current in Solid State A C Relay By Kim Gauen Senior Applications Engineer, Discrete Applications Lab Because M O SF E T s are voltage controlled, they're usu­

Contextual Info: KL73 thin film inductor features • • • • • Excellent for high frequency applications Low DC resistance and high Q Suitable for reflow and wave soldering Low tolerance ±2% available Small size allows for high density mounting 1H, 1E, 1J, 2A, 2B

Contextual Info: KOA SPEER ELECTRONICS, INC. SS-222 R6 AHA 9/29/03 Multilayer Ceramic Inductors Type MHL CERTIFIED 1. General • ■ ■ ■ ■ Monolithic structure provides high reliability in a wide temperature and humidity range High quality ceramic material and unique manufacturing process provides high Q at high frequency

Contextual Info: KL73 thin film inductor features • • • • • Excellent for high frequency applications Low DC resistance and high Q Suitable for reflow and wave soldering Low tolerance ±2% available Small size allows for high density mounting 1H, 1E, 1J, 2A, 2B