Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    ISOWATT22Û Search Results

    ISOWATT22Û Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ISOWATT220AB STMicroelectronics ISOWATT220AB - ASD & DISCRETES - TOURS Original PDF
    ISOWATT220AC STMicroelectronics ISOWATT220AC - ASD & DISCRETES - TOURS Original PDF

    ISOWATT22Û Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    B-408 diode

    Abstract: ic 4081 pin diagram 230v AC to 30V AC converter circuit diagram ic 4081 230v AC to 30V dC converter circuit diagram L9 zener 9.1 ac to dc converters adjustable to 48 vdc Pin Diagram of ic 4081 VB408 VB408-1
    Text: VB408, VB 408B V B 408-1/ V B 408FI HIGH VOLTAGE LINEAR REGULATOR POWER I.C. T A R G ET DATA TYPE ^ V IN,OUT him VOUT 400 V 40 mA 1.25 to V ,n-30 V VB408 VB408-1 VB408FI VB408B • INPUT VOLTAGE UP TO 400 V DC OR 285 V RMS RECTIFIED ■ OUTPUT VOLTAGE ADJUSTABLE FROM 1.25


    OCR Scan
    VB408, VB408B VB408FI VB408 VB408-1 VB408FI VB408B, B-408 diode ic 4081 pin diagram 230v AC to 30V AC converter circuit diagram ic 4081 230v AC to 30V dC converter circuit diagram L9 zener 9.1 ac to dc converters adjustable to 48 vdc Pin Diagram of ic 4081 PDF

    1F42

    Abstract: F424 IF424 F324 tf flyback transformer tv F324-SGSIF324-SGSF424-SGSIF424 SGSF324 SGSF324-SGSIF324-SGSF424-SGSIF424 NPN Transistor 600V TO-220
    Text: 7*35^ 537 a D S q ifc .5 T -1 3 -Î3 6 SG S F324/IF324 SG S F424/IF424 SGS-THOMSON S G S-THOMSON 30E » FASTSWITCH HOLLOW-EMITTER NPN TRANSISTORS • H IG H S W IT C H IN G S P E E D N P N P O W E R TRANSISTO RS ■ HOLLOW EM ITTER TECHNO LO G Y ■ H IG H V O L T A G E FO R O F F -L IN E A P P L IC A ­


    OCR Scan
    SGSF324/IF324 SGSF424/IF424 50kHz 500ms 1F42 F424 IF424 F324 tf flyback transformer tv F324-SGSIF324-SGSF424-SGSIF424 SGSF324 SGSF324-SGSIF324-SGSF424-SGSIF424 NPN Transistor 600V TO-220 PDF

    ISOWATT220

    Abstract: No abstract text available
    Text: SELECTION GUIDE BY VOLTAGE RDS on 3 •d V(BR)DSS (max) (A) (V) (fi) Type •□(max) (A) P«ot (W) 9fs min (mho) ^iss max (pF) TO-220 TO-220 ISOWATT220 TO-220 ISOWATT220 SGSP358 MTP15N05L MTP15N05LFI STLT19 STLT19FI 7.00 15.00 10.00 15.00 10.00 50 75 30


    OCR Scan
    O-220 ISOWATT220 ISOWATT22Q STH107N50 STH10N50 STHI10N50 STHI10N50FI PDF

    sgs*P381

    Abstract: ISOWATT218 IGBT ISOWATT220 STLT20 MTP3055AFI SGSP381 IRFP453FI SGSP579 SGSP591
    Text: SELECTION GUIDE BY PART NUMBER V BR DSS 9«s min (mho) max (PF) Page 70 75 75 75 35 8.00 3.00 4.00 4.00 4.00 700typ 2000 2000 2000 2000 159 163 167 173 167 30.00 20.00 12.00 19.00 19.00 75 35 75 75 78 4.00 4.00 2.70 4.00 4.00 2000 2000 2000 2000 2000 177


    OCR Scan
    P-220 ISOWATT220 O-220 O-220 STHI07N50 STHI07N50FI STHI10N50 STHI10N50FI sgs*P381 ISOWATT218 IGBT STLT20 MTP3055AFI SGSP381 IRFP453FI SGSP579 SGSP591 PDF

    transistors IGBT

    Abstract: SGS-Thomson
    Text: r Z Z S C S -T H O M S O N ^ 7 # , ¡¡«aoffiûiiiLiKgir^wogi_ STHI10N50 sth m o n so fi HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS IGBT PRELIMINARY DATA TYPE STHI10N50 STHI10N50FI • • • • V DSS 500 V 500 V 10 A 10 A


    OCR Scan
    STHI10N50 STHI10N50 STHI10N50FI ISOWATT220 500ms transistors IGBT SGS-Thomson PDF

    N 821 Diode

    Abstract: transistor IRF 450 821 transistor ON 823 D 823 transistor transistor D 822 irf transistor 822FI SC-0241 tr 821
    Text: rz 7 A 7#. SCS-THOMSON IRF 820/FI-821/FI mnmglliigmiBiMnigi_ IRF 822/FI-823/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS RdS OI1 IRF820 IRF820FI 500 V 500 V 3.0 ß 3.0 ß IRF821 IRF821FI 450 V 450 V 3.0 ß 3.0 n 2.5 A 2.0 A IRF822


    OCR Scan
    IRF820 IRF820FI IRF821 IRF821FI IRF822 IRF822FI IRF823 IRF823FI 820/FI-821/FI 822/FI-823/FI N 821 Diode transistor IRF 450 821 transistor ON 823 D 823 transistor transistor D 822 irf transistor 822FI SC-0241 tr 821 PDF

    RE528

    Abstract: tp2n60fi TP2N60
    Text: SGS-THOMSON STP2N60 STP2N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE RoS on V d ss S TP2N 60 S TP2N 60FI Id a 600 V 3 .5 600 V 3 .5 L I 2 .9 A 2 .2 A . AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan
    STP2N60 STP2N60FI O-220 ISOWATT220 STP2N60 STP2N60/FI RE528 tp2n60fi TP2N60 PDF

    irf540 switch

    Abstract: transistor irf 540 IRF 540 irf transistors Application Note of IRF540 irf540 circuit diagram a irf 540 transistor IRF540 IRF540FI 541 transistor
    Text: r Z 7 SCS-THOM SON ^7# M »H LIËT[iMO(g§ IRF 540/FI-541/FI IRF 542/FI-543/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS • • • • TYPE V DSS R DS(on IRF540 IRF540FI 100 V 100 V 0.077 fi 0.077 fi IRF541 IRF541FI 80 V 80 V 0.077 0.077 IRF542


    OCR Scan
    540/FI-541/FI 542/FI-543/FI IRF540 IRF540FI IRF541 IRF541FI IRF542 IRF542FI IRF543 IRF543FI irf540 switch transistor irf 540 IRF 540 irf transistors Application Note of IRF540 irf540 circuit diagram a irf 540 transistor 541 transistor PDF

    LF33ACDT

    Abstract: LF33CV 5252 F 0921 LF50ACDT LF120ACV LF40C TA 4040
    Text: S C S - T H O M ilL iO S O N l f o T « n e i o a c / c S E R I E S VERY LOW DROP VOLTAGE REGULATORS WITH INHIBIT P R E L IM IN A R Y D ATA . V ER Y LOW DROPOUT VOLTAGE 0.45V TYP. - 0.9V TYP. FOR 1.25 AND 1.5V . V ER Y LOW QUIESCENT CURRENT (TYP. 50 \iA IN O F F MODE, 500nA IN ON


    OCR Scan
    500nA T0125 O-220 1SOWATT220, TCH252 0068772-B LF33ACDT LF33CV 5252 F 0921 LF50ACDT LF120ACV LF40C TA 4040 PDF

    TC1100C

    Abstract: 380n
    Text: rz T ^7# SGS-THOMSON M » iL iO T (S iO O S DTV64D/F (CRT HORIZONTAL DEFLECTION) HIGH VOLTAGE DAMPER DIODE MA I N P R O D U C T S C H A R A C T E R I S T I C S I f (AV) 6A V rrm 1500V Vf (max) 1 . 4V F E A T UR E S AND B ENE FIT S • Very fast recovery diode allows HF H. deflection.


    OCR Scan
    DTV64D/F 56-82kHz ISOWATT220AC) T0220AC ISOWATT22 DTV64D DTV64F 64kHz TC1100C 380n PDF

    Untitled

    Abstract: No abstract text available
    Text: 7 SGS-THOMSON « M M © « ! B Y W 8 0 F HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES . • . ■ . ■ SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY


    OCR Scan
    ISOWATT220AC) T0220AC, ISOWATT220AC T0220AC BYW80-200 ISOWATT22 BYW80F-200 PDF

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON STPS735D/F STPS745D/F POWER SCHOTTKY RECTIFIER • ■ ■ ■ ■ ■ ■ VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP HIGH AVALANCHE CAPABILITY LOW THERMAL RESISTANCE INSULATED PACKAGE :


    OCR Scan
    STPS735D/F STPS745D/F T0220AC T0220AC ISOWATT220AC, ISOWATT22Ã STPS735D STPS745D STPS735F STPS745F PDF

    jrf 520

    Abstract: irf 44 n schematic diagram UPS 600 Power structure IRF520 irf5205 IRF521 IRF520 application note IRF 520 TRANSISTOR n 522 IRF522
    Text: 3QE P /S T J • 7cjScjg37 QQSTTb? 3 ■ S G S -T H O M S O N ^ D œ iŒ ig T O iO ig i 6^ S-THOMSON TYPE N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V Dss ^D S on IRF520 IRF520FI IRF521 IRF521FI 100 100 80 80 0.27 Q 0.27 n Id ' 9.2 A 7 A IRF522 IRF522FI


    OCR Scan
    520/FI-521 522/FI-523/FI IRF520 IRF520FI IRF521 IRF521FI IRF522 IRF522FI 1RF523 IRF523FI jrf 520 irf 44 n schematic diagram UPS 600 Power structure irf5205 IRF520 application note IRF 520 TRANSISTOR n 522 PDF

    BUT11 equivalent

    Abstract: transistor t220 but11 BUT-11 ph but11a BUT11A APPLICATION 11AFI but11fi 7929 BUT11 SGS
    Text: • ? CLSC}B3J 0Q£flb55 0 ■ S C S -T H O M S O N []*[RK»i gïïl(Q M(gS S_G S - T H O M S O N "p3VI?> BUT11 FI B U T 1 1A /A F I _ 3QE J> HIGH VOLTAGE SWITCH DESCRIPTION The BUT11/A and BUT11FI/AFI are silicon miltiepitaxial mesa NPN transistors respectively in Jedec


    OCR Scan
    flb55 BUT11 BUT11/A BUT11FI/AFI O-220 ISOWATT220 BUT11/FI BUT11A/AFI ISOWATT-220 BUT11 equivalent transistor t220 BUT-11 ph but11a BUT11A APPLICATION 11AFI but11fi 7929 BUT11 SGS PDF

    Untitled

    Abstract: No abstract text available
    Text: r z T SCS-THOMSON ^ 7 # raaeB iiLi SîB©oase8 SGSF313 SGSF313PI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS , HIGH VOLTAGE CAPABILITY (450V V c e o * VERY HIGH SWITCHING SPEED: tf = 35ns TYPICAL AT le = 2.5A, IB1 = 0.5A, V b e o H = -5V . LOW SATURATION VOLTAGE


    OCR Scan
    SGSF313 SGSF313PI ISOWATT22Û E81734 SGSF313PI T0-220 ISOWATT220 PDF

    mje520

    Abstract: SGS1F444 SGSD00030 e13008 BUT23 2m3771 BUT62 BUW42AP 2n5337 BUW32AP
    Text: S E L E C T IO N G U ID E B Y P A C K A G E GENERAL PURPOSE TRANSISTO RS SO T-32 P 4 Complemen­ hFE«* 'c A VCE (V) “CEsat » 'c (A) (V) BD434 MJE210 MJE370 BD436 2N4918 2N5193 50 70 25 50 30 25 2.00 0.50 1.00 2.00 0.50 1.50 1.0 1.0 1.0 1.0 1.0 2.0 0.50


    OCR Scan
    BD433 MJE200 MJE520 BD435 2N4921 2IM5190 2IM6037 MJE521 MJE180 BD135 SGS1F444 SGSD00030 e13008 BUT23 2m3771 BUT62 BUW42AP 2n5337 BUW32AP PDF

    STLT20

    Abstract: STLT20FI
    Text: f Z 7 STLT20 STLT19 S G S -T H O M S O N ^7# HDËœitLiÊTOOMÊS N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORS PRELIMINARY DATA TYPE STLT20 STLT20FI STLT19 STLT19FI VDSs 60 V 60 V 50 V 50 V R DS on 0.15 0.15 0.15 0.15 Q Q Q Q 15 10 15


    OCR Scan
    STLT20 STLT19 STLT20FI STLT19 STLT19FI O-220 ISOWATT220 500ms PDF

    Schematics AL 1450 DV

    Abstract: ixc 844 schematic diagram welding inverter STP5N80 845 diode DC/AC to DC smps circuit diagram schematic diagram dc-ac inverter schematic diagram dc-ac welding inverter CIRCUIT STP5N80FI RC50
    Text: _ • 7^2^237 00Mb2öl « V# _ BiSGTH S C S -T H O M S O N [*^ Q [E[L gTi»«S STP5N80 STP5N80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V STP5N80 S TP5N 80FI ■ . . . . ■ . dss 800 V 800 V RDS(on) Id < 2 0 < 2 n 5 .5 A


    OCR Scan
    STP5N80 STP5N80FI STP5N80 STP5N80FI 004b5B7 STP5N80/FI Schematics AL 1450 DV ixc 844 schematic diagram welding inverter 845 diode DC/AC to DC smps circuit diagram schematic diagram dc-ac inverter schematic diagram dc-ac welding inverter CIRCUIT RC50 PDF

    D 843 Transistor

    Abstract: irf 840 TRANSISTOR 841 sgs 841 IRF 80A D 843 Power Transistor irf z 44 st irf 44 n transistor irf 840 thomson tv
    Text: 30E 3> • 7 ^ 2 3 7 002^01^ 7 ■ ^ T : 3 °l~ i3 / 7 7 SG STHO M SO N IR F 8 4 0 / F I - 8 4 1 /F I 4 7 l a [^D^ Q i[L[i(glF^(Q)K!]D(gi_ IR F 8 4 2 / F I - 8 4 3 / F 1 jS fi S - thomson" TYPE IRF840 IRF840FI IRF841 IRF841FI IRF842 IRF842FI IRF843


    OCR Scan
    840/FI-841 842/FI-843/FI IRF840 IRF840FI IRF841 IRF841FI IRF842 IRF842FI IRF843 IRF843FI D 843 Transistor irf 840 TRANSISTOR 841 sgs 841 IRF 80A D 843 Power Transistor irf z 44 st irf 44 n transistor irf 840 thomson tv PDF

    L7912C

    Abstract: No abstract text available
    Text: SGS-THOMSON «E^êmiIÛÏIHMgS L7900 SERIES NEGATIVE VOLTAGE REGULATORS •O U TPU T C U R R E N T UP TO 1.5A ■O UTPUT VO LT AG ES O F - 5; -5 .2 ; -6; - 8 ; - 1 2 ; - 1 5 ; -18; - 20; - 22; - 24V ■TH ERM AL O VERLO AD PROTECTION ■SH O R T CIRCUIT PROTECTION


    OCR Scan
    L7900 L7900 T0-220 L7800 1N4001 2N30S5 L7905 L7912C PDF

    Untitled

    Abstract: No abstract text available
    Text: S T P S 8 H 10 OD/F/G/G -1 _ HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS If av 8A V rrm Tj (max) 100 V 175 °C V f (max) 0.58 V • ■ ■ ■ NEGLIGIBLESWITCHING LOSSES HIGH JUNCTION TEMPERATURE CAPABILITY LOW LEAKAGE CURRENT


    OCR Scan
    STPS8H100D ISOWATT22Ã STPS8H100F STPS8H100G-1 STPS8H100G PDF

    Untitled

    Abstract: No abstract text available
    Text: STPS20H1OOCT/CF/CG/CG-1 _ HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS I f a v 2 x 10 A V rrm 100 V Tj 175°C V f (max) 0.64 V A1 A2- FEATURES AND BENEFITS • NEGLIGIBLE SWITCHING LOSSES ■ HIGH JUNCTION TEMPERATURE CAPABILITY


    OCR Scan
    STPS20H1OOCT/CF/CG/CG-1 ISOWATT220AB ISOWATT22Ã STPS20H100CF STPS20H100CT PDF

    ISOWATT220

    Abstract: MTP3055AFI IRF722FI IRFP453FI SGSP579 SGSP591 SGS35MA050D1 SGSP382
    Text: SELECTION GUIDE BY PART NUMBER a Type V BR DSS R DS(on) 9fs ^iss min (mho) max (pF) Page 20.00 17.00 30.00 25.00 20.00 70 75 75 75 35 8.00 3.00 4.00 4.00 4.00 700typ 2000 2000 2000 2000 159 163 167 173 167 30.00 20.00 12.00 19.00 19.00 75 35 75 75 78 4.00


    OCR Scan
    STHI07N50 STHI07N50FI STHI10N50 STHI10N50FI O-220 ISOWATT22Û ISOWATT22Q ISOWATT220 MTP3055AFI IRF722FI IRFP453FI SGSP579 SGSP591 SGS35MA050D1 SGSP382 PDF

    Untitled

    Abstract: No abstract text available
    Text: T T ET SS ? 0 0 M b 3S 7 23b « S G T H STP18N1 o STP18N1OFI SGS-THOMSON ¡[LJOT «§ N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR . • ■ . . ■ ■ ■ 100 V 100 V R d S oii D D V dss STP18N 10 STP18N 10FI A A O O TYPE Ip 18 A 11 A TYPICAL Ros(on) = 0.095 LI


    OCR Scan
    STP18N1 STP18N1O STP18N 100VDS STP18N10/FI PDF