IXYS Extending ISOPLUS-DILTM Package Range Less copper, Less Weight, Better Performance
Abstract: MOSFET OF K SERIES IXYS GMM 3x160-0055X2 IXYS Corporation power mosfet smd package
Text: IXYS Extending ISOPLUS-DILTM Package Range Less copper, Less Weight, Better Performance Biel, Switzerland, May 14, 2009 – IXYS Corporation NASDAQ: IXYS announced today the extension of the ISOPLUS-DILTM package range using the latest generation TrenchMVTM
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60N120
Abstract: induction heat resonant D-68623 V9560 60n12
Text: Advanced Technical Information IXER 60N120 IC25 NPT3 IGBT VCES VCE sat typ. in ISOPLUS 247TM = 95 A = 1200 V = 2.1 V ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol Conditions VCES
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60N120
247TM
E153432
induction heat resonant
D-68623
V9560
60n12
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Untitled
Abstract: No abstract text available
Text: IXFC 15N80Q HiPerFETTM ISOPLUS 220TM MOSFET VDSS ID25 RDS on Q-Class Electrically Isolated Back Surface = 800 V = 13 A = 0.65 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg ISOPLUS 220TM Symbol Test Conditions Maximum Ratings
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15N80Q
220TM
IXFH15N80Q
728B1
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35N120D1
Abstract: D-68623 ISOPLUS weight
Text: Advanced Technical Information IXER 35N120D1 IC25 NPT3 IGBT with Diode VCES VCE sat typ. in ISOPLUS 247TM = 50 A = 1200 V = 2.2 V ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol
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35N120D1
247TM
E153432
D-68623
ISOPLUS weight
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35N120D1
Abstract: D-68623 IXER 35N120D1
Text: IXER 35N120D1 NPT3 IGBT with Diode IC25 = 50 A = 1200 V VCES VCE sat typ. = 2.2 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C
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35N120D1
247TM
E153432
35N120D1
D-68623
IXER 35N120D1
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60N120
Abstract: D-68623 IXER60N120 V9560
Text: IXER 60N120 NPT3 IGBT IC25 = 95 A = 1200 V VCES VCE sat typ. = 2.1 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings
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60N120
247TM
E153432
IXER60N120
60N120
D-68623
IXER60N120
V9560
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40N60SCD1
Abstract: ixkf40n60scd1 IXYS DS 145
Text: IXKF 40N60SCD1 CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 41 A RDS on) typ. = 60 mΩ trr = 70 ns with Series Schottky Diode and Ultra Fast Antiparallel Diode in High Voltage ISOPLUS i4-PAC™ ISOPLUS i4-PAC™ 5 DS Preliminary data 1 DF 1 T 2 5 E72873
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40N60SCD1
E72873
20110201b
40N60SCD1
ixkf40n60scd1
IXYS DS 145
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35N120D1
Abstract: 35n120
Text: IXER 35N120D1 NPT3 IGBT with Diode IC25 = 50 A = 1200 V VCES VCE sat typ. = 2.2 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C
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35N120D1
247TM
E153432
35N120D1
35n120
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35N120D1
Abstract: D-68623 8200T u2003
Text: IXER 35N120D1 NPT3 IGBT with Diode IC25 = 50 A = 1200 V VCES VCE sat typ. = 2.2 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C
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35N120D1
247TM
E153432
35N120D1
D-68623
8200T
u2003
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Untitled
Abstract: No abstract text available
Text: IXKF 40N60SCD1 CoolMOS 1 Power MOSFET VDSS ID25 RDS on) typ. trr with Series Schottky Diode and Ultra Fast Antiparallel Diode = 600 V = 41 A = 60 m = 70 ns in High Voltage ISOPLUS i4-PAC™ ISOPLUS i4-PAC™ 5 DS DF Preliminary data 1 1 2 T 5 E72873 2
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40N60SCD1
E72873
20110201b
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1200 va ups circuit diagram
Abstract: 30-06BR DSEC16-06A dse*60-06A y 803A DSEP 15-06A dsep 12-12a dsep 2x91-03a 30-04A 6006B
Text: HiPer Fast Recovery Epitaxial Diodes Reg. Nr. 2743-02 HiPerFREDTM Contents Package style Type Voltage Current 1 TO-220 AC 2 TO-247 AD 2a ISOPLUS 247 TM 3 TO-268 AA 4 TO-220 AB 5 TO-247 AD 5a ISOPLUS 247 TM 6 SOT-227 B, miniBLOC Circuit Diagram Page VRRM IFAV
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5-03A
9-03A
0-03A
0-04A
5-06A
9-06A/B
0-06A/B/BR
0-06A/AT
2-12A
1200 va ups circuit diagram
30-06BR
DSEC16-06A
dse*60-06A
y 803A
DSEP 15-06A
dsep 12-12a
dsep 2x91-03a
30-04A
6006B
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Untitled
Abstract: No abstract text available
Text: IXER 60N120 NPT3 IGBT IC25 = 95 A VCES = 1200 V VCE sat typ. = 2.1 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside E G = Gate Maximum Ratings VCES TVJ = 25°C to 150°C 1200 ± 20 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 22 Ω; TVJ = 125°C
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60N120
247TM
E153432
IXER60N120
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60N120
Abstract: IXER60N120 80E10 igbt for induction heating ic IXER 60N120 20600t
Text: IXER 60N120 NPT3 IGBT IC25 = 95 A = 1200 V VCES VCE sat typ. = 2.1 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside E G = Gate t Conditions Maximum Ratings VCES TVJ = 25°C to 150°C u Symbol TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 22 Ω; TVJ = 125°C
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60N120
247TM
E153432
IXER60N120
60N120
IXER60N120
80E10
igbt for induction heating ic
IXER 60N120
20600t
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32N12
Abstract: 32N120P
Text: Preliminary Technical Information PolarTM HiPerFETTM Power MOSFET IXFL32N120P VDSS ID25 RDS on trr ( Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 24A Ω 340mΩ 300ns ISOPLUS i5-PakTM Symbol Test Conditions
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IXFL32N120P
300ns
100ms
32N120P
1-22-10-C
32N12
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20n60c
Abstract: No abstract text available
Text: ADVANCE TECHNICAL INFORMATION CoolMOSTM Power MOSFET ISOPLUS220TM IXKC 20N60C Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions ISOPLUS 220LVTM Maximum Ratings VDSS TJ = 25°C to 150°C 600
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ISOPLUS220TM
20N60C
220LVTM
O-220LV
728B1
065B1
123B1
20n60c
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXGF20N300 High Voltage IGBT VCES = 3000V = 22A IC25 VCE sat ≤ 3.2V For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 3000
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IXGF20N300
20N250
4P-P528
2-04-09-A
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information High Voltage IGBT VCES = 2500V IC90 = 65A VCE sat ≤ 2.9V IXGL75N250 For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i5-PakTM Symbol Test Conditions Maximum Ratings VCES VCES TJ = 25°C to 150°C
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IXGL75N250
75N250
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20N60C
Abstract: UPS 380v
Text: ADVANCE TECHNICAL INFORMATION CoolMOS Power MOSFET ISOPLUS220TM IXKC 20N60C Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions ISOPLUS 220LVTM Maximum Ratings VDSS TJ = 25°C to 150°C 600
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ISOPLUS220TM
20N60C
220LVTM
728B1
065B1
123B1
20N60C
UPS 380v
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IXBL64N250
Abstract: No abstract text available
Text: Advance Technical Information High Voltage, High Gain BiMOSFETTM IXBL64N250 VCES IC110 = 2500V = 46A ≤ 3.0V VCE sat Monolithic Bipolar MOS Transistor (Electrically Isolated Tab) ISOPLUS i5-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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IXBL64N250
IC110
64N250
5-10-A
IXBL64N250
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IXBF20N300
Abstract: No abstract text available
Text: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N300 VCES = 3000V IC90 = 15A VCE sat ≤ 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C
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IXBF20N300
20N300
1-23-09-A
IXBF20N300
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF15N300C VCES = 3000V IC110 = 15A VCE sat 6.0V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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IXBF15N300C
IC110
15N300C
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IGBT 1500v 50A
Abstract: IGBT 1500v 25A
Text: Advance Technical Information IXGF25N300 High Voltage IGBT VCES = 3000V = 27A IC25 VCE sat ≤ 3.0V For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 3000 V
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IXGF25N300
338B2
IGBT 1500v 50A
IGBT 1500v 25A
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Untitled
Abstract: No abstract text available
Text: PolarHVTM HiPerFET Power MOSFET VDSS ID25 IXFC16N50P RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 500V 10A Ω 450mΩ 200ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISOPLUS 220TM E153432 Symbol Test Conditions Maximum Ratings
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IXFC16N50P
200ns
220TM
E153432
16N50P
5J-745
5-1-09-C
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information High Voltage, BiMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC110 = 24A VCE sat ≤ 3.0V IXBF42N300 (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25°C to 150°C
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IC110
IXBF42N300
100ms
42N300
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