E326295
Abstract: XPGWHT-L1-0000-00H51 114R2 led XP-G CLD-DS20
Text: Cree XLamp® XP-G LEDs Data Sheet The XLamp XP-G LED delivers unprecedented levels of light output and efficacy for a single die LED. The XLamp XP-G LED continues Cree’s history of innovation in LEDs for lighting applications with wide viewing angle, symmetrical package, unlimited floor life
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CLD-DS20
E326295
XPGWHT-L1-0000-00H51
114R2
led XP-G
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Untitled
Abstract: No abstract text available
Text: HY5RS123235FP 512M 16Mx32 GDDR3 SDRAM HY5RS123235FP Revision 1.1 This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5RS123235FP
16Mx32)
Page15)
Page47)
Table18
Page48)
Table19
Page50)
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bcm 4330
Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Text: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?
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HY5RS123235
Abstract: CLAMSHELL HYNIX and zq A2K1 136ball GDDR3 SDRAM 256Mb HY5RS123235FP nanya ba1g
Text: HY5RS123235FP 512M 16Mx32 GDDR3 SDRAM HY5RS123235FP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5RS123235FP
16Mx32)
Page15)
Page47)
Table18
Page48)
Table19
Page50)
HY5RS123235
CLAMSHELL
HYNIX and zq
A2K1
136ball
GDDR3 SDRAM 256Mb
HY5RS123235FP
nanya
ba1g
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HYE18L512320BF-7.5
Abstract: JEP147 HYB18L512320BF-7.5 Qimonda AG ismet qimonda PG-TFBGA-90-3
Text: August 2007 HYB18L512320BF-7.5 HYE18L512320BF-7.5 DRAMs for Mobile Applications 512-Mbit SDR Mobile-RAM Internet Data Sheet Rev.1.22 Internet Data Sheet HY[B/E]18L512320BF-7.5 512-Mbit Mobile-RAM HY[B/E]18L512320BF-7.5 Internet Data Sheet Revision History: Rev.1.22, 2007-08
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HYB18L512320BF-7
HYE18L512320BF-7
512-Mbit
18L512320BF-7
HYE18L512320BF-7.5
JEP147
HYB18L512320BF-7.5
Qimonda AG
ismet
qimonda
PG-TFBGA-90-3
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HY5RS123235
Abstract: ELPIDA DDR User BA2-H10
Text: HY5RS123235F 512M 16Mx32 GDDR3 SDRAM HY5RS123235F This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5RS123235F
16Mx32)
HY5RS123235F
HY5RS123235
ELPIDA DDR User
BA2-H10
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Untitled
Abstract: No abstract text available
Text: HY5RS123235FP 512M 16Mx32 GDDR3 SDRAM HY5RS123235FP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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Original
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PDF
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HY5RS123235FP
16Mx32)
Page15)
Page47)
Table18
Page48)
Table19
Page50)
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Untitled
Abstract: No abstract text available
Text: HY5RS123235FP 512M 16Mx32 GDDR3 SDRAM HY5RS123235FP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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Original
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PDF
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HY5RS123235FP
16Mx32)
HY5RS123235FP
Page15)
Page47)
Table18
Page48)
Table19
Page50)
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Untitled
Abstract: No abstract text available
Text: T M S 551 60, T M S 551 61, T M S 551 70, T M S 5 5 1 71 2 6 21 44 BY 16-BIT M U L T IP O R T VIDEO RAMS S M V S 4 6 4 -MARCHI 996 + Organization: • 1 DRAM: 262144 Words S A M : 256 W o r d s • • x 16 B i t s D a t a f ro m t h e D R A M to O n e - H a l f o f t he
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16-BIT
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Untitled
Abstract: No abstract text available
Text: 16Mb: x16 SDRAM M IC R O N I TECHNOLOGY, INC. M T 4 8 L C 1 M 1 6 A 1 S - 5 1 2 K X 16 X 2 b a n k s SYNCHRONOUS DRAM F or the la te st full-length data sheet, please re fe r to the M icron Web site : www. m icron, com /m ti/m sp/htm l/datasheet. htm ! FEATURES
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PC100
50-PIN
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DQ131
Abstract: MT48LC16M16A2TG8E
Text: ADVANCE M IC R O N * I 2 56 M b : xV TCCHW LOOY.INC. SYNCHRONOUS DRAM nV ,1,5 SD R A M MT48LC64M4A2 - 16 Meg x 4 x 4 banks MT48LC32M8A2 - 8 Meg x 8 x 4 banks MT48LC16M16A2 - 4 Meg x 16 x 4 banks For the latest data sh ee t revisions, p le a s e refer to the Micron
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192-cycle
MT48LC64M4A2
MT48LC32M8A2
54-PIN
256Mb
256MSDRAM
DQ131
MT48LC16M16A2TG8E
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Untitled
Abstract: No abstract text available
Text: M il“ C a a iS J I L IL z 64Mb: x4, x8, x16 SDRAM M T48LC16M 4A2 -4 Meg x 4 x 4 banks M T48LC 8M 8A 2- 2 Meg x 8 x 4 banks M T48LC4M 16A2 -1 Meg x 16 x 4 banks SYNCHRONOUS DRAM For the latest data sheet, please refer to the Micron Web site: www,micron.com/mti/msp/html/datasheet.html
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T48LC16M
T48LC
T48LC4M
PC66-,
PC100-
PC133-compliant
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48LC2M8A1
Abstract: 16Mb SDRAM MICRON
Text: MICRON I 1 6 MEG: x4, x8 SDRAM TOtWOLOGT, INC. M T 4 8 L C 4 M 4 A 1 /A 2 S - 2 M e g x 4 x 2 b a n k s M T 4 8 L C 2 M 8 A 1 /A 2 S - 1 M e g x 8 x 2 b a n k s SYNCHRONOUS DRAM FEATURES PIN A S S I G N M E N T Top View * PCI 00-com pliant, includes CONCURRENT AUTO
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00-com
096-cycle
44-PIN
48LC2M8A1
16Mb SDRAM MICRON
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marking code KJJ
Abstract: No abstract text available
Text: ADVANCE 1 28 MEG: x4, x8, x1 6 SDRAM MT48LC32M4A1/A2 -8 Meg x 4 x 4 banks MT48LC16M8A1/A2-4 Meg x 8 x 4 banks MT48LC8M16A1/A2 -2 Meg x 16 x 4 banks SYNCHRONOUS DRAM FEATURES PIN A S S I G N M E N T Top View * PCI 00-com pliant, in clu d es CONCURRENT AUTO
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MT48LC32M4A1/A2
MT48LC16M8A1/A2-4
MT48LC8M16A1/A2
00-com
096-cycle,
54-Pin
128M5
marking code KJJ
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY 128Mb: x4, x8, x16 SDRAM MICRON' I TECHNOLOGY, INC. M T48LC32M 4A2 - 8 Meg x 4 x 4 banks M T48LC16M 8A2 - 4 Meg x 8 x 4 banks M T48LC8M 16A2 - 2 Meg x 16 x 4 banks SYNCHRONOUS DRAM For the latest full-length data sheet, please refer to the Micron
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128Mb:
T48LC32M
T48LC16M
T48LC8M
PC100-
PC133-compliant
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Untitled
Abstract: No abstract text available
Text: ADVANCE MICRON' I 256M b:X\ * 8 , X 1 6 TCCHWLOOY.INC. S D R A I V I MT48LC64M4A2 - 1 6 M e g x 4 x 4 banks MT48LC32M8A2 - 8 Meg x 8 x 4 banks MT48LC16M16A2 - 4 Meg x 16 x 4 banks SYNCHRONOUS DRAM For the latest data sheet revisions, please refer to the Micron
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MT48LC64M4A2
MT48LC32M8A2
MT48LC16M16A2
PCI00-compliant;
54-PIN
256Mb:
256MSDRAM
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Untitled
Abstract: No abstract text available
Text: ADVANCE 64Mb: x32 SDRAM MICRON8 I TEOWOLOOV, INC. SYNCHRONOUS DRAM MT48LC2M32B1 - 2 Meg x 32 x 4 banks F o r the late st data sheet revisions, plea se re fe r to the Micron Web site: w w w .m icron.com /m ti/m sp/htm l/datasheet.htm l FEATURES • PC I00-com pliant; includes CONCURRENT AUTO
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MT48LC2M32B1
I00-com
096-cycle
86-PIN
64MSDRAMx32
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PC133 registered reference design
Abstract: No abstract text available
Text: M l^ n n N I L IL z 64Mb: x4, x8, x16 SDRAM MT48LC16M4A2-4 Meg x 4 x 4 banks MT48LC8M8A2 - 2 Meg x 8 x 4 banks MT48LC4M16A2 -1 Meg x 16 x 4 banks SYNCHRONOUS DRAM For the latest full-length data sheet, please refer to the Micron Web site: www.m icron.com/mti/m sp/htm l/datasheet.htm l
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MT48LC16M4A2-4
MT48LC8M8A2
MT48LC4M16A2
PC66-,
PC133-com
PC133 registered reference design
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Untitled
Abstract: No abstract text available
Text: 16“b:x16 MICRON' I TCCHWLOOY.INC. S SYNCHRONOUS DRAM M T 4 8 L C 1 M 1 6 A 1 - 5 1 2 K X 16 X 2 R A I V I b a n ks F o r the late st data sheet revisions, plea se re fe r to the Micron Web site: w w w .m icron.com /m ti/m sp/htm l/datasheet.htm l FEATURES
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PCI00-compliant;
50-PIN
16MSDRAMx16
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Untitled
Abstract: No abstract text available
Text: ADVANCE 128 MEG: x4, x8, x16 SDRAM MICRON I TECHNOLOGY, INC. SYNCHRONOUS DRAM MT48LC32M4A1 /A2 - 8 Meg x 4 x 4 banks MT48LC16M8A1 /A2 -4 Meg x 8 x 4 banks MT48LC8M16A1/A2 -2 Meg x 16 x 4 banks FEATURES • PCIOO-compliant, includes CONCURRENT AUTO PRECHARGE
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MT48LC32M4A1
MT48LC16M8A1
MT48LC8M16A1/A2
096-cycle,
54-PIN
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Untitled
Abstract: No abstract text available
Text: 16 M E G :x4,x8 MICRON I TECHNOLOGY, INC. Q FEATURES 44-Pin TSOP x4 NC DQ0 NC DQ1 - MARKING 4M 4 2M 8 - - • W RITE Recovery OWR/tDPL *WR = 1 CLK *WR = 2 CLK C on tact facto ry for availability.) Al A2 • Plastic Package - OCPL 44-pin TSOP (400 mil) Note:
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44-Pin
096-cycle
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Untitled
Abstract: No abstract text available
Text: 64M b:xV n a,xi6 MICRON' I TCCHWLOOY.INC. S D R A I V I MT48LC16M4A2 - 4 Meg x 4 x 4 banks MT48LC8M8A2 - 2 Meg x 8 x 4 banks MT48LC4M16A2 - 1 Meg x 16x 4 banks SYNCHRONOUS DRAM For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html
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MT48LC16M4A2
MT48LC8M8A2
MT48LC4M16A2
I00-com
54-PIN
64MSDRAM
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Untitled
Abstract: No abstract text available
Text: 64 M E G :X 4e X nnX A M MICRON I TECHNOLOGY, INC. Q ^ ^ jy j MT48LC16M4A1 /A2 -4 Meg x 4 x 4 banks MT48LC8M8A1/A2 - 2 Meg x 8 x 4 banks MT48LC4M16A1/A2 -1 Meg x 16 x 4 banks SYNCHRONOUS DRAM FEATURES • PCIOO-compliant, includes CONCURRENT AUTO PRECHARGE
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MT48LC16M4A1
MT48LC8M8A1/A2
MT48LC4M16A1/A2
096-cycle,
54-PIN
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Untitled
Abstract: No abstract text available
Text: 2SÔ*lbb2 ODDTÎbQ bIT «CVP b5E ]> CY7B134 CYPRESS SEMICONDUCTOR CY7B135 _ CY7B1342 Features Functional Description 0.8-micron BiCMOS for high performance High-speed access — 20 ns commercial — 25 ns (military) Automatic power-down
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CY7B134
CY7B135
CY7B1342
7B1342
7B134
48-pin
48-pin
7B135/7B1342
52-pin
CY7B134,
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