Untitled
Abstract: No abstract text available
Text: Rev. 1.21. Apr. 2012 M474B5173BH0 M474B1G73BH0 204pin Unbuffered ECC SODIMM based on 4Gb B-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
|
Original
|
PDF
|
M474B5173BH0
M474B1G73BH0
204pin
78FBGA
K4B4G0846B
512Mbx8
1Gx72
|
k4b2g1646q
Abstract: ddr3 2133 K4B2G1646Q-BCK0 K4B2G1646Q-BCMA
Text: Rev. 1.03, Mar. 2014 K4B2G1646Q 2Gb Q-die DDR3 SDRAM Only x16 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
|
Original
|
PDF
|
K4B2G1646Q
96FBGA
k4b2g1646q
ddr3 2133
K4B2G1646Q-BCK0
K4B2G1646Q-BCMA
|
Untitled
Abstract: No abstract text available
Text: Rev. 1.51, Apr. 2013 M471B5173BH0 M471B1G73BH0 204pin Unbuffered SODIMM based on 4Gb B-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
|
Original
|
PDF
|
M471B5173BH0
M471B1G73BH0
204pin
78FBGA
K4B4G0846B
512Mbx8
1Gx64
|
Untitled
Abstract: No abstract text available
Text: W632GU6KB 16M 8 BANKS 16 BIT DDR3L SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5
|
Original
|
PDF
|
W632GU6KB
|
Untitled
Abstract: No abstract text available
Text: W631GU6KB 8M 8 BANKS 16 BIT DDR3L SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5
|
Original
|
PDF
|
W631GU6KB
|
W631GG6KB-12
Abstract: W631GG6KB-15 W631GG6KB15A DDR3 DIMM SPD JEDEC 24si 9x13 W631GG6KB15K w631gg6k W631GG6KB12I W631GG6KB-15I
Text: W631GG6KB 8M 8 BANKS 16 BIT DDR3 SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5
|
Original
|
PDF
|
W631GG6KB
W631GG6KB-12
W631GG6KB-15
W631GG6KB15A
DDR3 DIMM SPD JEDEC
24si
9x13
W631GG6KB15K
w631gg6k
W631GG6KB12I
W631GG6KB-15I
|
W631GU8KB15K
Abstract: No abstract text available
Text: W631GU8KB 16M 8 BANKS 8 BIT DDR3L SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5
|
Original
|
PDF
|
W631GU8KB
W631GU8KB15K
|
W632GG6KB
Abstract: W632GG6KB15I
Text: W632GG6KB 16M 8 BANKS 16 BIT DDR3 SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5
|
Original
|
PDF
|
W632GG6KB
W632GG6KB15I
|
Untitled
Abstract: No abstract text available
Text: Nanya Technology Corp. DDR3 L 4Gb SDRAM NT5CB(C)512M8CN / NT5CB(C)256M16CP NT5CB(C)512M8CN / NT5CB(C)256M16CP Commercial, Industrial and Automotive DDR3(L) 4Gb SDRAM Features Signal Integrity JEDEC DDR3 Compliant - Configurable DS for system compatibility
|
Original
|
PDF
|
512M8CN
256M16CP
DDR3L-1866
|
IDSH51
Abstract: No abstract text available
Text: April 2008 IDSH51–02A1F1C IDSH51–03A1F1C IDSH51–04A1F1C 512-Mbit Double-Data-Rate-Three SDRAM DDR3 SDRAM RoHS Compliant Products Advance Internet Data Sheet Rev. 0.92 Advance Internet Data Sheet IDSH51–0[2/3/4]A1F1C 512-Mbit Double-Data-Rate-Three SDRAM
|
Original
|
PDF
|
IDSH51
02A1F1C
03A1F1C
04A1F1C
512-Mbit
mpth0535
|
Untitled
Abstract: No abstract text available
Text: July 2007 HYB18M256320CFX–7.5 HYE18M256320CFX–7.5 DRAMs for Mobile Applications 256-Mbit Mobile-RAM Data S heet Rev.1.03 Data Sheet HY[B/E]18M256320CFX–7.5 256-Mbit DDR Mobile-RAM HYB18M256320CFX–7.5, HYE18M256320CFX–7.5 Revision History: Rev.1.03, 2007-07
|
Original
|
PDF
|
HYB18M256320CFX
HYE18M256320CFX
256-Mbit
18M256320CFX
|
Untitled
Abstract: No abstract text available
Text: April 2008 HYB18M1G160DF–[6/7.5] HYB18M1G320DF–[6/7.5] HYE18M1G160DF–[6/7.5] HYE18M1G320DF–[6/7.5] 1Gbit DDR Mobile-RAM DRAMs for Mobile Applications RoHS Compliant Advance Internet Data Sheet Rev. 0.81 Advance Internet Data Sheet HY[B/E]18M1G[16/32]0DF–[6/7.5]
|
Original
|
PDF
|
HYB18M1G160DF
HYB18M1G320DF
HYE18M1G160DF
HYE18M1G320DF
18M1G
|
HYE18L256160BC-7
Abstract: No abstract text available
Text: Internet Data Sheet, Rev. 1.72, July 2005 HYB18L256160B[C/F]-7.5 HYE18L256160B[C/F]-7.5 HYE18L256160BCL-7.5 HYE18L256160BFL-7.5 DRAMs for Mobile Applications 256-Mbit Mobile-RAM Memory Products N e v e r s t o p t h i n k i n g . Edition 2005-07 Published by Infineon Technologies AG,
|
Original
|
PDF
|
HYB18L256160B
HYE18L256160B
HYE18L256160BCL-7
HYE18L256160BFL-7
256-Mbit
P-VFBGA-54-2
03292006-JTNB-YF9U
HYE18L256160BC-7
|
HYE18L512320BF-7.5
Abstract: HYB18L512320BF-7.5
Text: Data Sheet, Rev.1.2, April 2005 HYB18L512320BF-7.5 HYE18L512320BF-7.5 DRAMs for Mobile Applications 512-Mbit Mobile-RAM Memory Products N e v e r s t o p t h i n k i n g . Edition 2005-04 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany
|
Original
|
PDF
|
HYB18L512320BF-7
HYE18L512320BF-7
512-Mbit
18L512320BF-7
P-TFBGA-90-1
HYE18L512320BF-7.5
HYB18L512320BF-7.5
|
|
|
hynix ddr3
Abstract: h5tc2g83 82-ball "2Gb DDR3L SDRAM" CL10 CL11 DDR3L
Text: 2Gb DDR3L SDRAM 2Gb DDR3L SDRAM Lead-Free&Halogen-Free RoHS Compliant H5TC2G43AFR-xxA H5TC2G83AFR-xxA * Hynix Semiconductor reserves the right to change products or specifications without notice. Rev. 0.1 / Nov. 2009 1 Revision History Revision No. History
|
Original
|
PDF
|
H5TC2G43AFR-xxA
H5TC2G83AFR-xxA
H5TC2G43AFR-xxA,
H5TC2G83AFR-xxA
125ns
DDR3-1333H
DDR3-1600K.
82Ball
hynix ddr3
h5tc2g83
82-ball
"2Gb DDR3L SDRAM"
CL10
CL11
DDR3L
|
HYB18L256160B
Abstract: No abstract text available
Text: September 2006 HYB18L256160B[C/F]-7.5 HYE18L256160B[C/F]-7.5 HYE18L256160BCL-7.5 HYE18L256160BFL-7.5 DRAMs for Mobile Applications 256-Mbit Mobile-RAM Data S heet Rev. 1.73 Data Sheet HY[B/E]18L256160B[C/F]L-7.5 256-Mbit Mobile-RAM HYB18L256160B[C/F]-7.5, HYE18L256160B[C/F]-7.5, HYE18L256160BCL-7.5, HYE18L256160BFL-7.5
|
Original
|
PDF
|
HYB18L256160B
HYE18L256160B
HYE18L256160BCL-7
HYE18L256160BFL-7
256-Mbit
18L256160B
|
Untitled
Abstract: No abstract text available
Text: January 2007 HYB18L256169BFX-7.5 HYE18L256169BFX-7.5 DRAMs for Mobile Applications 256-Mbit Mobile-RAM RoHS Compliant Product Data Sheet R ev . 1 . 01 HY[B/E]18L256169BFX-7.5 256-Mbit Mobile-RAM HYE18L256169BFX-7.5 Revision History: 2007-01 , Rev. 1.01 Page
|
Original
|
PDF
|
HYB18L256169BFX-7
HYE18L256169BFX-7
256-Mbit
18L256169BFX-7
07062006-V6ZK-PGR3
256-Mecting
|
circuit diagram of ddr ram
Abstract: HYB18M1G320BF
Text: March 2007 HYB18M 1G 320 B F– 7 . 5 HYE18M 1G 320 B F– 7 . 5 DRAMs for Mobile Applications 1-Gbit x32 DDR Mobile-RAM RoHS compliant Data S heet Rev.1.00 Data Sheet HY[B/E]18M1G320BF 1-Gbit DDR Mobile-RAM HYB18M1G320BF–7.5, HYE18M1G320BF–7.5, Revision History: 2007-03, Rev.1.00
|
Original
|
PDF
|
HYB18M
HYE18M
18M1G320BF
HYB18M1G320BF
HYE18M1G320BF
02022006-J7N7-GYFP
circuit diagram of ddr ram
|
P-VFBGA 49 package
Abstract: ddr ram optimum recievers smd code a12 HYB18M512160BFX P-VFBGA-60-1
Text: November 2006 HYB18M512160BFX-7.5 DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM RoHS compliant Data S heet Rev. 1.10 HYB18M512160BFX 512-Mbit DDR Mobile-RAM HYB18M512160BFX-7.5, , Revision History: 2006-11, Rev. 1.10 Page Subjects major changes since last revision
|
Original
|
PDF
|
HYB18M512160BFX-7
512-Mbit
HYB18M512160BFX
04052006-4SYQ-ZRN3
P-VFBGA 49 package
ddr ram
optimum recievers
smd code a12
HYB18M512160BFX
P-VFBGA-60-1
|
HYB25L512160AC
Abstract: HYE25L512160AC
Text: Data Sheet, Rev. 1.3, April 2004 HYB25L512160AC–7.5 512MBit Mobi le- RAM S t an d a r d T e m p e r at u r e R an g e M e m or y P r o du c t s N e v e r s t o p t h i n k i n g . The information in this document is subject to change without notice. Edition 2004-04
|
Original
|
PDF
|
HYB25L512160AC
512MBit
10212003-BSPE-77OL
P-TFBGA-54-2
MO207G
FBGA-54
HYE25L512160AC
|
Untitled
Abstract: No abstract text available
Text: Rev. 1.0, Nov. 2010 M471B2873GB0 M471B5673GB0 204pin Unbuffered SODIMM based on 1Gb G-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
|
Original
|
PDF
|
M471B2873GB0
M471B5673GB0
204pin
78FBGA
K4B1G0846G
128Mbx8
256Mx64
|
K4B4G0846C
Abstract: K4B4G0446C K4B4G0846C-BCMA K4B4G0446C-BCK0 DDR3-1866
Text: Rev. 1.0, Apr. 2012 K4B4G0446C K4B4G0846C 4Gb C-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
|
Original
|
PDF
|
K4B4G0446C
K4B4G0846C
78FBGA
K4B4G0846C
K4B4G0846C-BCMA
K4B4G0446C-BCK0
DDR3-1866
|
216-ball
Abstract: Dual LPDDR2 LPDDR2 SDRAM micron LPDDR2 1Gb Memory MT42L128M64D4 MR63 Micron LPDDR2 lpddr2 168 lp-ddr2 MT42L256M32
Text: 2Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L128M16D1, MT42L64M32D1, MT42L64M64D2, MT42L128M32D2, MT42L256M32D4, MT42L128M64D4 MT42L96M64D3, MT42L192M32D3 Features Options • VDD2: 1.2V • Configuration – 16 Meg x 16 x 8 banks x 1 die
|
Original
|
PDF
|
MT42L128M16D1,
MT42L64M32D1,
MT42L64M64D2,
MT42L128M32D2,
MT42L256M32D4,
MT42L128M64D4
MT42L96M64D3,
MT42L192M32D3
09005aef83f3f2eb
216-ball
Dual LPDDR2
LPDDR2 SDRAM micron
LPDDR2 1Gb Memory
MR63
Micron LPDDR2
lpddr2 168
lp-ddr2
MT42L256M32
|
K4B4G0846B-HYK0
Abstract: K4B4G0846B-HYH9 K4B4G0446B-HYK0 K4B4G0446B-HYH9 09 06 115 2932
Text: Rev. 1.2, Dec. 2011 K4B4G0446B K4B4G0846B 4Gb B-die DDR3L SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
|
Original
|
PDF
|
K4B4G0446B
K4B4G0846B
78FBGA
K4B4G0846B-HYK0
K4B4G0846B-HYH9
K4B4G0446B-HYK0
K4B4G0446B-HYH9
09 06 115 2932
|