cu209scpb-T20A
Abstract: ISE Electronics moving message over dot matrix display ESD Mercator cu209 imsa-9032B-16P VFD ISE Electronics T20A6 NR30 T20A
Text: VACUUM FLUORESCENT DISPLAY MODULE SPECIFICATION Model : CU209SCPB-T20A SPECIFICATION NO. DATE OF ISSUE REVISION PUBLISHED BY : DS-180—0000-01 Oct, 13,1990 J a n , 5,1991 ISE ELECTRONICS CORP./JAPAN ESD MERCATOR SOUTH DENES GT YARMOUTH NORFOLK NR30 3PX k
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CU209SCPB-T20A
DS-18O-0Q0O-01
CU209SCPB
cu209scpb-T20A
ISE Electronics
moving message over dot matrix display
ESD Mercator
cu209
imsa-9032B-16P
VFD ISE Electronics
T20A6
NR30
T20A
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CU205SCPB-T21A
Abstract: ISE Electronics imsa-9032B-16P CU205SCPB moving message over dot matrix display VFD ISE Electronics iriso imsa-9032 imsa-9032B IMSA-9032B-16P-GF
Text: VACUUM FLUORESCENT DISPLAY MODULE SPECIFICATION Model : CU205SCPB—T21A SPECIFICATION NO. : D S -22 8 -0 0 0 0 -0 0 DATE OF ISSUE : December, 26,1991 REVISION : PUBLISHED BY : ISE ELECTRONICS CORP./JAPAN CU205SCPB -T21A 1 . G eneral Description 1 . 1 Application : Readout of computer, micro—computer, communication term inal and autom atic
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CU205SCPB-T21A
DS-228-0000-00
CU205SCPB
-T21A
of-20.
CU205SCPB-T21A
ISE Electronics
imsa-9032B-16P
moving message over dot matrix display
VFD ISE Electronics
iriso
imsa-9032
imsa-9032B
IMSA-9032B-16P-GF
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23E D
Abstract: km6465
Text: SAMSUNG SEMICONDUCTOR INC 23E D 7^4145 DGOaab4 ñ • KM6465P/KM6465LP CMOS SRAM 16K x 4 Bit Static RAM FEATURE GENERAL DESCRIPTION • Fast Access Time 25,35,45ns max. • Low Power Dissipation Standby (TTL) : 2 mA (max.) (CMOS): 100 (iA (max.) Operating
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KM6465P/KM6465LP
22-pin
300mil)
KM6465P/LP
536-bit
23E D
km6465
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Untitled
Abstract: No abstract text available
Text: b3E • bSHTfiS? GGISESÖ 7M2 *11 1 13 MITSUBISHI BIPOLAR DIGITAL ICs M54813L MITSUBISHI DGTL LOGIC 1/4, 1 /1 6 , 1 /3 2 DIVIDER/OSCILLATOR DESCRIPTION The M54813L is a semiconductor integrated circuit using I2 L technology, consisting of a quartz oscillator circuit and
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M54813L
M54813L
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING 3 IS U N P U B LIS H E D . COPYRIGHT RELEASED BY TE ELECTRONICS CORPORATION. FOR PUBLICATION A LL RIGHTS 2 - ,- LOC R ESERVED. R E V IS IO N S D IST D p LTR D E SC RIPTIO N D REVISED. ECR—0 9 —0 2 0 9 5 1 DATE DWN APVD 22SEP09 FY WK
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22SEP09
L94V-0,
762/xm
048/xm
27/xm
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Sprague Electric
Abstract: Pirgo Electronics
Text: API ELECTRONICS INC . v?=r :43A0135 ; 13 de 0111435^2 4| ' ' ' rUWtKIKANÌUIUK ENGINEERINGBULLETIN - - $ INTERIM BU LLETIN * Subject to Revision Without Notice . - J u ly T5, 1971 pi n DG r-i w 0w -• ELECTROniCSIliC. TYPE 1162, 7 AMP POWER DARLINGTON PLANAR TRANSISTOR
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0D43Sc1S
000013b
Sprague Electric
Pirgo Electronics
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Untitled
Abstract: No abstract text available
Text: D A T E SYM R E V I S I O N 8 /1 / 9 7 - 10 /2 9 /9 9 A F DR PRESS H O LE FIT SIZE MA T E R I A L: PIN- BRASS ALLEY INSERTION BUSHING- v 0,160 V/Æ r^y//M - TEFLEN FINISH: 0,000 PIN- PER B16, 1/2 HARD ASTM D1710 WH ITE ,000010"MIN, G E L D TYPE MM DG ,040
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D1710
MIL-G-45204
1103R-05-0319
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Untitled
Abstract: No abstract text available
Text: D A T E SYM R E V I S I O N 9 /19 /9 6 11/2 /9 9 RE C OR D AUTH, DR, CK, NT NT IS S U E D A OTHERW ISE S PEC IFIED TO LER AN C E ±,005 V A S ±0 MM DG ,210 I- 0 ,093 £ 0,040 ,515 RECOMMENDED F DR PRESS HOLE FIT MATERIAL: SIZE PIN- B R A S S P ER ASTM B16,
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D1710
11-BRDWN
14-YELLDW
16-BLUE
1110-05-05XX
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Untitled
Abstract: No abstract text available
Text: D A T E SY M R E V I S I O N 9/16/96 11/23/99 RECORD AUTH, ISSUED A ADD S I Z E DF THE MOUNTING HD L E OTHERW ISE S P E C I F I E D +, 0 0 5 WAS +, 0 10 TDLERAN CE DR, CK, NT MM NT DG 00, 060 ±0, 003 RECOMMENDED FIN ISH CODE COM PONENT C H I B E R Y L L IU M C O P P E R
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI ELEK {LINEAR} b2 D EI bSM'ïôSb DGG4DCI4 S | •jz^-25’ INDUSTRY STANDARD X MITSUBISHI LIN^ R M2001 SEMICONDUCTORS 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION The M2001 7-channel sink driver consists of 14 NPN transistors
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M2001
500mA
M2001
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5D7 diode
Abstract: dioda rectifier 250M IRFS450 IRFS451 dioda OA 50
Text: N-CHANNEL POWER MOSFETS IRFS450/451 FEATURES • Lower R d s io n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability
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IRFS450/451
IRFS450
IRFS451
5D7 diode
dioda rectifier
250M
dioda OA 50
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irl530
Abstract: No abstract text available
Text: N-CHANNEL LOGIC LEVEL MOSFET IRL530/IRL531 FEATURES TO-220 • Low er R d s ON • • • • • • • Excellent voltage stability Fast switching speeds Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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IRL530/IRL531
O-220
O-220
IRL530
IRL531
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL LOGIC LEVEL MOSFET IRL624 FEATURES • • • • • • • Lower R d s ON Excellent voltage stability Fast switching speeds Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Logic level operating PRODUCT SUMMARY
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IRL624
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KDL10
Abstract: KBL02 KBL06 RS402 RS404 RS405 KBL06 AC KBL BRIDGE RECTIFIER 005 K6L005 KBL BRIDGE RECTIFIER
Text: KBL / RS 005 / 401 THRU SEMICONDUCTOR TECHNICAL DATA PORWAJDINTERNATIONAL ELECTRONICS LTD. KBL / RS 10 / 407 TECHN/CAL S PEC/F JCATIONS OF S/NGLE-PJ-MSE S/LJCON BR/DGE RECTIFJER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 4.0 Amperes FEATURES * id e a l lo r p r in t e d c ir c u it b o a r d
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MIL-STD-202E.
KBL005
KBL10
RS401
RS407
KDL10
KBL02
KBL06
RS402
RS404
RS405
KBL06 AC
KBL BRIDGE RECTIFIER 005
K6L005
KBL BRIDGE RECTIFIER
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BE 4X12
Abstract: X24M CT marking
Text: r PRODUCT N U M BER 9 3 2 3 5 -X Y Y VI i i. o tu +* 11.95 REF. I d-g K a e H se H a - £ 3>- NOTE 8 4X6M M -X 11 , -X 1 2 , AND - X 1 3 niM *B* 4X12M M -X 2 1 , - X 2 2 , AND - X 2 3 4 X24M M -X 3 1 , - X 3 2 , AND - X 3 3 4 X48M M -X 4 1 , - X 4 2 , AND - X 4 3
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4X12M
BE 4X12
X24M
CT marking
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km23c8105bg
Abstract: km23c8105 samsung ace
Text: SAMSUNG ELECTRONICS INC b7E D • 7^4142 KM23C8105B G □G170b4 MME I SMGK CMOS MASK ROM 8M -Bit (1M x 8/512K x 16) CMOS M ASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode) • Fast access time
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KM23C8105B
0017DbM
x8/512Kx
100ns
42-pin,
44-pin,
17Db7
KM23C8105B)
km23c8105bg
km23c8105
samsung ace
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HX01
Abstract: D-10 U883
Text: REVISIONS LTR DATE YR-MO-DA DESCRIPTION APPROVED REV SHEET REV SHEET REV STATUS OF SHEETS 2 REV SHEET 1 2 9 10 11 12 13 14 15 16 17 18 19 20 21 PMIC N/A DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE
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/409n
5962-E012
rcu15962-8986306XX
ICY7C420-25DMB
15962-8986306YX
1CY7C421-25DMB
I5962-8986306ZX
ICY7C421-25LMB
HX01
D-10
U883
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TRW 59621
Abstract: military IMU 5962-88532 TDC1049
Text: REVISIONS APPROVED DATE YR-MO-DA DESCRIPTION LTR REV SHEET REV SHEET REV STATUS OF SHEETS RE:V I SHEET PM 1C N/A STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE A M S C N/A 1 2
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1988rawing
5962-8853201XX
TDC1049J0V
5962-8853201YX
TDC1049J3V
5962-8853201ZX
TDC1049C1V
TRW 59621
military IMU
5962-88532
TDC1049
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ld18a
Abstract: IRFS722 IRFS720 IRFS721 IRFS723
Text: SAM S UN G E L E C T R O N I C S INC L.7E D • T ^ b M l M S 0 D 1 7 3 b 4 1^5 N-CHANNEL POWER MOSFETS IRFS720/721/722/723 FEATURES • • • • • • • Lower R d s O N Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure
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IRFS720/721/722/723
0D173b4
O-220F
IRFS720/721
IRFS720
IRFS721
IRFS722
IRFS723
ld18a
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PDF
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Untitled
Abstract: No abstract text available
Text: KA2209B DUAL LOW VOLTAGE POWER AMP INTRODUCTION The KA2209B is a m onolithic integrated audio am plifier in a 8-pin plastic dual in line package. It is designed for portable cassette player and radio. FEATURES • • • • W ide operating supply voltage: V c c = I-8V ~ 9V
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KA2209B
KA2209B
8-DIP-300
100HZ,
100uF
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st 9622
Abstract: IRF9
Text: P-CHANNEL POWER MOSFETS IRF9620/9621 /9622/9623 FEATURES • • • • • • • Lower Ros ON Improved inductive ru gge d n e ss Fast sw itching tim es R u g ge d polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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IRF9620/9621
IRF9620
IRF9620/9621Z9622/9623
st 9622
IRF9
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trb plug
Abstract: TNG3
Text: PATA CDNTAINEO IN THIS DOCUMENT IS PROPRIETARY TO TROMPETER ELECTRONICS INC. AND SHALL NOT 8E OISCLOSED. COPIED OR USED FDR PROCUREMENT DR MANUFACTURE WITHOUT EXPRESS WRITTEN PERMISSION OF TROMPETER ELECTRONICS I N C . _ 305-1537 REVISIONS
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5962-8967101LX
Abstract: No abstract text available
Text: REVISIONS LTR Add a C-4 package. A DATE Vn-MO-DA DESCRIPTION APPROVED 1990 APR 11 Make changes to 1 .2 .2 , 6.6 and fig u r e 1. REV SHEET REV SHEET REV STATUS OF SHEETS REV A A A SHEET 1 2 3 4 5 6 7 8 9 10 11 12 PREPARED BY PMIC N/A /¿ ji THIS DRAWING IS AVAILABLE
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5962-E1672
MIL-STD-883,
MIL-STD-883
MIL-M-38510
DAC8221A
12-bit
5962-8967101LX
DAC-8221AW
5962-89671013X
DAC-8221ATC
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dac 3851
Abstract: DB10 MS-549-904
Text: REVISIONS LTR DESCRIPTION APPROVED DATE VR-MO-QA REV SHEET REV SHEET R E V ST A T U S O F SHEETS REV SHEET 1 10 PMICN/A PREPA R ED BY STANDARDIZED MILITARY DRAWING CHECKED K S f t THIS DRAWING IS AVAILABLE FOR U SE BY ALL DEPARTMENTS AND AGENCIES O F THE
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12-BIT
5962-E1125
PM7645AR/883B
5962-88778012X
PM7645ARC/883B
5962-8877802RX
PM7645BR/883B
5962-88778022X
PM7645BRC/883B
dac 3851
DB10
MS-549-904
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