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    IRFS450 Price and Stock

    onsemi IRFS450B

    MOSFET N-CH 500V 9.6A TO3PF
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    DigiKey IRFS450B Tube 360
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    Newark IRFS450B Bulk 360
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    Fairchild Semiconductor Corporation IRFS450B

    POWER FIELD-EFFECT TRANSISTOR, 9.6A I(D), 500V, 0.39OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRFS450B 30
    • 1 $9.99
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    • 100 $6.66
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    Fairchild Semiconductor Corporation IRFS4508

    Electronic Component
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    ComSIT USA IRFS4508 510
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    IRFS450 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFS450 Fairchild Semiconductor 500V N-Channel MOSFET Original PDF
    IRFS450 Fairchild Semiconductor N-CHANNEL POWER MOSFET Original PDF
    IRFS450 Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRFS450 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFS450 Unknown FET Data Book Scan PDF
    IRFS450 Samsung Electronics N-Channel Power MOSFET Scan PDF
    IRFS450A Fairchild Semiconductor Advanced Power MOSFET Original PDF
    IRFS450A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFS450A Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRFS450B Fairchild Semiconductor 500 V N-Channel MOSFET Original PDF
    IRFS450B Fairchild Semiconductor 500V N-Channel MOSFET Original PDF

    IRFS450 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFS450B

    Abstract: IRFS450
    Text: IRFS450B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching


    Original     		PDF IRFS450B IRFS450B IRFS450

    IRFS450

    Abstract: No abstract text available
    Text: $GYDQFHG 3RZHU 026 7 IRFS450 FEATURES BVDSS = 500 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.4Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 9.6 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V


    Original     		PDF IRFS450 IRFS450

    IRFS450A

    Abstract: No abstract text available
    Text: $GYDQFHG 3RZHU 026 7 IRFS450A FEATURES BVDSS = 500 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.4Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 9.6 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V


    Original     		PDF IRFS450A IRFS450A

    Untitled

    Abstract: No abstract text available
    Text: IRFS450B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching


    Original     		PDF IRFS450B

    IRFS450B

    Abstract: No abstract text available
    Text: IRFS450B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching


    Original     		PDF IRFS450B IRFS450B

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original     		PDF

    FLMP SuperSOT-6

    Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
    Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1


    Original     		PDF SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    fqaf40n25

    Abstract: fqaf19n20l FQAF44N08 FQAF44N10 FQAF55N10 FQAF58N08 FQAF65N06 FQAF70N08 FQAF70N10 FQAF85N06
    Text: Discrete MOSFETs TO-3PF RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-3PF N-Channel FQAF85N06 60 Single 0.01 - - - 86 67 100 FQAF65N06 60 Single 0.016 - - - 48 49 86


    Original     		PDF FQAF85N06 FQAF65N06 FQAF90N08 FQAF70N08 FQAF58N08 FQAF44N08 SSF70N10A FQAF70N10 FQAF12P20 SFF9240 fqaf40n25 fqaf19n20l FQAF44N08 FQAF44N10 FQAF55N10 FQAF58N08 FQAF65N06 FQAF70N08 FQAF70N10 FQAF85N06

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    sss4n60a

    Abstract: IRFS634A IRFS630A SSP4N60A irf640b SSS7N60A IRFU210A SSP7N60A IRF634B IRF840A china
    Text: B-FET Line Card Fairchild Power MOSFETs B-FET Line Card Overview Fairchild has developed a new range of 200V~600V MOSFETs, called B-FETs, using Fairchild’s proprietary, planar, DMOS technology. This advanced technology is especially tailored for minimizing on-state resistance, providing superior switching performance, and withstanding a high


    Original     		PDF IRF830A IRF830B Power247TM, sss4n60a IRFS634A IRFS630A SSP4N60A irf640b SSS7N60A IRFU210A SSP7N60A IRF634B IRF840A china

    IRFS450

    Abstract: 9.6A p MOSFET
    Text: IRFS450 A dvanced Power MOSFET FEATURES B V DSS — 5 0 0 V ♦ Avalanche Rugged Technology II D ♦ Lower Input Capacitance CD CD ^D S o n = ♦ Rugged Gate Oxide Technology 0 .4 Í2 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 500V


    OCR Scan     		PDF IRFS450 IRFS450 9.6A p MOSFET

    D1033

    Abstract: No abstract text available
    Text: IRFS450A Advanced Power MOSFET FEATURES B V qss • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 p A Max. @ VOS= 500V ■


    OCR Scan     		PDF IRFS450A D1033

    5D7 diode

    Abstract: dioda rectifier 250M IRFS450 IRFS451 dioda OA 50
    Text: N-CHANNEL POWER MOSFETS IRFS450/451 FEATURES • Lower R d s io n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		PDF IRFS450/451 IRFS450 IRFS451 5D7 diode dioda rectifier 250M dioda OA 50

    Untitled

    Abstract: No abstract text available
    Text: IRFS450A A d van ced Power MOSFET FEATURES B V DSS - 500 V ^ D S o n = 0 .4 Î2 o II ♦ Lower Input Capacitance CT> ♦ Rugged Gate Oxide Technology CD ♦ Avalanche Rugged Technology A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V


    OCR Scan     		PDF IRFS450A

    IRFS450A

    Abstract: power mosfet j 162
    Text: IRFS450A A dvanced Power MOSFET FEATURES B V DSS — 5 0 0 V ♦ Avalanche Rugged Technology II D ♦ Lower Input Capacitance CD CD ^D S o n = ♦ Rugged Gate Oxide Technology 0 .4 Í2 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 500V


    OCR Scan     		PDF IRFS450A IRFS450A power mosfet j 162

    IS-96A

    Abstract: vds250
    Text: IRFS450A FEATURES - 500 V ^ D S o n = 0 .4 Q. • Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = 500V ■ Lower RDS(ON) CD Avalanche Rugged Technology


    OCR Scan     		PDF IRFS450A GG3b333 G03b33M G03b335 IS-96A vds250

    *c1251c

    Abstract: TC100LC
    Text: IRFS450A Advanced Power MOSFET FEATURES BVdss = 500 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 pA M ax. @ VDS= 500V


    OCR Scan     		PDF IRFS450A 100lC) *c1251c TC100LC

    Untitled

    Abstract: No abstract text available
    Text: IRFS450 Advanced Power MOSFET FEATURES B ^D S S - ♦ Avalanche Rugged Technology 500 V 0.4Q ♦ Rugged Gate Oxide Technology ^ D S o n = ♦ Lower Input Capacitance lD = 9.6 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 500V


    OCR Scan     		PDF IRFS450

    Untitled

    Abstract: No abstract text available
    Text: IRFS450A Advanced Power MOSFET FEATURES B ^D S S - ♦ Avalanche Rugged Technology 500 V 0.4Q ♦ Rugged Gate Oxide Technology ^ D S o n = ♦ Lower Input Capacitance lD = 9.6 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 500V


    OCR Scan     		PDF IRFS450A

    Untitled

    Abstract: No abstract text available
    Text: IRFS450 A d van ced Power MOSFET FEATURES B V DSS - 500 V ^ D S o n = 0 .4 Î2 o II ♦ Lower Input Capacitance CT> ♦ Rugged Gate Oxide Technology CD ♦ Avalanche Rugged Technology A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V


    OCR Scan     		PDF IRFS450

    irf1740

    Abstract: IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640
    Text: PRODUCT GUIDE D/I- PAK N-Channel Standard FET Part Number SSR3055A BV DSS (V) (A) (0» cfes (pF) I D R DSM Q Po (nC) fC/W) (W) Page 8 0.150 280 17 7.04 18 Vol.1 IRFR014A 8.2 0.140 280 17 7.04 18 Vol.1 IRFR024A 15 0.070 600 32 4.14 30 Vol.1 IRFR034A 23 0.040


    OCR Scan     		PDF SSR3055A IRFR014A IRFR024A IRFR034A IRFR110A IRFR120A IRFR130A IRFR210A IRFR220A IRFR230A irf1740 IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640

    b 772 p

    Abstract: No abstract text available
    Text: MOSFETs FUNCTION GUIDE TO-3P FULL P ACK A G E N -CH A N N EL BVos$ V lo(on)(A) Ros(on)(Q) R0jc(K/W) Po(Watt) Page IRFS141 IRFS151 60 19.40 27.70 0.077 0.055 1.50 1.30 83 96 767 772 IRFS140 IRFS150 100 19.40 27.70 0.077 0.055 1.50 1.30 83 96 767 772 IRFS241


    OCR Scan     		PDF IRFS141 IRFS151 IRFS140 IRFS150 IRFS241 1RFS251 IRFS240 IRFS250 IRFS341 IRFS351 b 772 p