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    KM23C8105 Search Results

    KM23C8105 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM23C8105D-10 Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF
    KM23C8105D-12 Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF
    KM23C8105D-15 Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF
    KM23C8105DET-10 Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF
    KM23C8105DET-12 Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF
    KM23C8105DG-10 Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF
    KM23C8105DG-12 Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF
    KM23C8105DG-15 Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF
    KM23C8105DT-10 Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF
    KM23C8105DT-12 Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF
    KM23C8105DT-15 Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF

    KM23C8105 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    km23c8105

    Abstract: km23c8105dg
    Text: KM23C8105D G CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) • 4 Words / 8 bytes page access


    Original
    PDF KM23C8105D /512Kx16) 100ns KM23C8105D 42-DIP-600 KM23C8105DG 44-SOP-600 200MAX km23c8105 km23c8105dg

    TSOP-23-5

    Abstract: SILICON General 741
    Text: KM23C8105D E T CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) • 4 Words / 8 bytes page access


    Original
    PDF KM23C8105D /512Kx16) 100ns 44-TSOP2-400 TSOP-23-5 SILICON General 741

    Untitled

    Abstract: No abstract text available
    Text: KM23C8105D E T CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) • 4 Words / 8 bytes page access


    Original
    PDF KM23C8105D /512Kx16) 100ns 44-TSOP2-400 44-TSOP2-400)

    Untitled

    Abstract: No abstract text available
    Text: KM23C8105D G CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) • 4 Words / 8 bytes page access


    Original
    PDF KM23C8105D /512Kx16) 100ns KM23C8105D 42-DIP-600 KM23C8105DG 44-SOP-600 200MAX

    Untitled

    Abstract: No abstract text available
    Text: KM23C8105D G CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) • 4 Words / 8 bytes page access


    Original
    PDF KM23C8105D /512Kx16) 100ns KM23C8105D 42-DIP-600 KM23C8105DG 44-SOP-600 42-DIP-600) 200MAX

    MB834000

    Abstract: M5M23160 MB834100 MB838000 MB832000 SGS M27C256 I27C256 KM23C1010 M27C256 M27C256 intel
    Text: CROSS-REFERENCE GUIDE 1. EPROM CAPACITY CONFIGRUATION MACRONIX INTEL AMD N.S. S.G.S. 256K 32K x 8 MX27C256 i27C256 Am27C256 NM27C256 M27C256 512K 64K x 8 MX27C512 i27C512 Am27C512 NM27C512 M27C512 32K x 16 MX27C516 128K x 8 MX27C1000 i27C010 Am27C010 NM27C010


    Original
    PDF MX27C256 i27C256 Am27C256 NM27C256 M27C256 MX27C512 i27C512 Am27C512 NM27C512 M27C512 MB834000 M5M23160 MB834100 MB838000 MB832000 SGS M27C256 I27C256 KM23C1010 M27C256 M27C256 intel

    Untitled

    Abstract: No abstract text available
    Text: KM23C8105D G CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION » Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time Random Access : 100ns{Max.) Page Access : 30ns{Max.) • 4 Words / 8 bytes page access


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    PDF KM23C8105D /512Kx16) 100ns KM23C8105D 42-DIP-600 KM23C8105DG 44-SOP-6M KM23C81050 KM23C KM23C81QSD

    km23c8105bg

    Abstract: km23c8105 samsung ace
    Text: SAMSUNG ELECTRONICS INC b7E D • 7^4142 KM23C8105B G □G170b4 MME I SMGK CMOS MASK ROM 8M -Bit (1M x 8/512K x 16) CMOS M ASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode) • Fast access time


    OCR Scan
    PDF KM23C8105B 0017DbM x8/512Kx 100ns 42-pin, 44-pin, 17Db7 KM23C8105B) km23c8105bg km23c8105 samsung ace

    Untitled

    Abstract: No abstract text available
    Text: KM23C8105B G CMOS MASK HOM 8M-Bit (1M x 8/512 K x 16) CM O S M ASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 1,048,576 x 8 (byte m ode) 524,288 x 16 (word mode) • F a st a c c e s s time R an do m a c c e ss: 100ns (max.) P a ge a c ce ss: 50 n s (max.)


    OCR Scan
    PDF KM23C8105B 100ns 42-pin, 44-pin, KM23C8105B) KM23C8105BG)

    Untitled

    Abstract: No abstract text available
    Text: KM23C8105D G CMOS MASK ROM 8M-Bit (1 Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) • 4 Words / 8 bytes page access


    OCR Scan
    PDF KM23C8105D /512Kx16) 100ns KM23C8105D 42-DIP-600 KM23C8105DG 44-SQP-600

    Untitled

    Abstract: No abstract text available
    Text: b7E 3> SAMSUNG ELECTRONICS INC • 7°ib414H 0D17Qb4 442 I KM23C8105B G CMOS MASK ROM 8M-Bit (1M x 8/512 K x 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode) • Fast access time


    OCR Scan
    PDF ib414H 0D17Qb4 KM23C8105B 100ns D0170b7 KM23C8105B) KM23C8105BG)

    KM23C16005AG

    Abstract: 44TSOP2 44-TSOP2
    Text: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE Density Power Supply 4M bit 5V±10% Part Number KM23C4000C G KM23C4100C(G/T) 8M bit 5V±10% 5V±10% 3.3V-0.3V 5Vt1C% 3 2M bit 3.3V+0.3V , 100 . Extended 512Kx8/256Kx16 100 - 150 KM23V41OOCET 512Kx 8 512Kx8/256Kx16


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    PDF KM23C4000C KM23C4100C KM23C410OCET KM23C4200C 512Kx 512Kx8/256Kx16 512Kx8/256Kx16 KM23C16005AG 44TSOP2 44-TSOP2

    uPD23C4000

    Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A


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    PDF 64Kx4 KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 64Kx8 256KX4 KM428C64 uPD23C4000 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E D • 7^4142 KM23C81 OOA G DülTGSb 37b «SPICK CMOS MASK ROM 8M-Bit (1M X 8 /5 1 2K X 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode) • Fast access time: 150ns (max.)


    OCR Scan
    PDF KM23C81 150ns 42-pin, 44-pin, KM23C8100A D0170b7 KM23C8105B KM23C8105B) KM23C8105BG)

    TC55B4257

    Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
    Text: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264


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    PDF KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 KM428C64 KM424C256 KM424C256A TC524256 TC55B4257 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v

    KMCJ532512

    Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
    Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7


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    PDF KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 KM41C4000C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KMCJ532512 KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL

    Untitled

    Abstract: No abstract text available
    Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Introduction . 11 2. Product Guide . 14 3. Ordering Information . 16


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    PDF KM23C4000D KM23C4100D KM23C41 KM23V64000T. KM23V64005AG KM23V64005ATY. KM23V64205ASG KM23SV32205T

    al 232 nec

    Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
    Text: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 MB81257 — S. Column KM41C258 TC51258


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    PDF KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 KM44C258 al 232 nec TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference

    KM23C8001

    Abstract: 32-sop
    Text: MEMORY ICs FUNCTION GUIDE 2.6 MASK ROM Capacity Part Number Orgrization Speed ns Tech. Features Package Remark 256K KM23C256(G) 32Kx8 120/150/200 CMOS Programmable C E & OE 28DIP(32SOP) Now 512K KM23C512(G) 6 4 K *8 120/150/200 CMOS Programmable C E & O E


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    PDF KM23C256 KM23C512 KC23C1000 KM23C1001 KM23C1010 KM23C1010J KM23C1011 32Kx8 128Kx 256KX KM23C8001 32-sop

    48TSOP1

    Abstract: MX* 64M-Bit eprom TY15 km23c32000cg-10 23v322 KM23C16205BSG-10 7Y12
    Text: MEMORY ICs 1. FUNCTION GUIDE INTRODUCTION 4M bit \ KM23C400QD G -8 512KX8 [- 1 KM23C4QOOD(G)-10 KM23C40QQD(E)TY-8 \ |— KM23C4Q00D(G)-12 ]- 1 KM23C4Q00D(E)'TY-10 |- 1 KM23C4000D(E)7Y-12 — [ KM23V4000D(E)TY-10 |- 1 KM23V4000D{E)TY-12 |-j KM23V4000D(E)TY-15


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    PDF 512KX8 KM23C400QD KM23C4QOOD KM23C4Q00D KM23C40QQD TY-10 KM23C4000D 7Y-12 KM23V4000D 48TSOP1 MX* 64M-Bit eprom TY15 km23c32000cg-10 23v322 KM23C16205BSG-10 7Y12