IRFS645 Search Results

IRFS645 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IRFS645		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)		Short Form	PDF
IRFS645		Unknown	FET Data Book		Scan	PDF
IRFS645		Samsung Electronics	N-Channel Power MOSFETS		Scan	PDF

IRFS645 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IRFS540 Abstract: IRFS541 irfsz22 IRFS634 irfs630 IRFS522 Text: FUNCTION GUIDE POWER MOSFETs TO-220 FULL PACKAGE N-CHANNEL BVdss V Part Number ID(onXA) RDS(onXß) 14.00 15.00 25.00 30.00 35.00 35.00 0.120 0.100 0.070 0.050 0.035 0.028 IRFSZ22 IRFSZ20 IRFSZ32 IRFSZ30 IRFSZ42 IRFSZ40 60.00 14.00 15.00 25.00 30.00 35.00	OCR Scan	O-220 IRFSZ22 IRFSZ20 IRFSZ32 IRFSZ30 IRFSZ42 IRFSZ40 IRFSZ25 IRFSZ24 IRFSZ35 IRFS540 IRFS541 IRFS634 irfs630 IRFS522	PDF
Untitled Abstract: No abstract text available Text: N-CHANNEL POWER MOSFETS IRFS644/645 FEATURES • • • • • • • Lower R d s <o n > Improved inductive ruggedness Fast switching times Rugged poiysiiicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability	OCR Scan	IRFS644/645 IRFS644 IRFS645	PDF
IRF9210 Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1 Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF	OCR Scan	2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1	PDF
IRFS645 Abstract: IRFS644 Text: SAMSUNG ELECTRONICS INC b?E D IRFS644/645 • 71b41M2 001735^ Ô2Ô « S M Ò K N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance	OCR Scan	IRFS644/645 to-220F IRFS644/645 IRFS644 IRFS645 GG173h3 VIRFS644	PDF