71B41M2 Search Results

71B41M2 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IRFS645 Abstract: IRFS644 Text: SAMSUNG ELECTRONICS INC b?E D IRFS644/645 • 71b41M2 001735^ Ô2Ô « S M Ò K N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance	OCR Scan	IRFS644/645 to-220F IRFS644/645 IRFS644 IRFS645 GG173h3 VIRFS644	PDF
Untitled Abstract: No abstract text available Text: SSP1N60A Advanced Power MOSFET FEATURES B ^D SS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ ■ Improved Gate Charge Extended Safe Operating Area ■ Lower Leakage Current : 25 \|iA Max. @ VDS = 600V — 600 V	OCR Scan	SSP1N60A 003b32fl O-220 00M1N 7Tb4142 DD3b33D	PDF
Untitled Abstract: No abstract text available Text: KS57C0002 4-BIT CMOS Microcontroller ELECTRONICS Product Specification 2 OVERVIEW The KS57C0002 single-chip CMOS microcontroller is designed for high-performance using Samsung's newest 4-bit CPU core. With a four-channel comparator, eight LED direct drive pins, serial I/O interface, and a versatile	OCR Scan	KS57C0002 KS57C0002 30-pin Me57C0002 fx/64,	PDF
wram samsung Abstract: 2W-25 OQ29 Text: KM4232W259A Graphic Memo ry ELECTRONICS FEATURES DESCRIPTION • 1 M Byte Frame-Buffer on a single chip • 2.1 G Byte/Second Internal Bus: - Fast Window Drawing Operations - Fill at up to 2.1 G Byte/Second -Aligned BitBLT at up to 0.64 G Byte/Second • 8-Column Block W rite with Bit and Byte Masking	OCR Scan	KM423 2W259A -15ns -83MHz 120-Pin KM4232W259A KM4232W259A 0Q312CH wram samsung 2W-25 OQ29	PDF
KM6164000B Abstract: KM6164000BLI-L KM6164000BL-L KM6164000BLT-5L KM6164000BLT-7L Text: KM6164000B Family CMOS SRAM 256Kx16 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION Process Technology : 0.4* • CMOS Organization : 256Kx16 Power Supply Voltage : Single 5V •• 10% Low Data Retention Voltage : 2V Min Three state output and TTL Compatible	OCR Scan	KM6164000B 256Kx16 256Kx16 44-TSOP KM616V4000B KM6164000BLI-L KM6164000BL-L KM6164000BLT-5L KM6164000BLT-7L	PDF
C1204B Abstract: tsop 3021 DIN 3021 STANDARD AA3021 Text: KM416C1004BT ELECTRONICS CMOS D R A M 1M x16B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power	OCR Scan	KM416C1004BT 16Bit 1Mx16 71bm42 302tib C1204B tsop 3021 DIN 3021 STANDARD AA3021	PDF
Untitled Abstract: No abstract text available Text: KM718B86 64Kx18 Synchronous SRAM 64K X 18-Bit Synchronous Burst SR A M FEATURES GENERAL DESCRIPTION • Synchronous Operation. • On-Chip Address Counter. • Solf-Timed Write Cycle. The KM718B86 is a 1,179,648 bit Synchronous Static Random Access Memory designed to support 66MHz of	OCR Scan	KM718B86 64Kx18 18-Bit 52-Pin KM718B86 66MHz	PDF
Untitled Abstract: No abstract text available Text: KS0122 Data Sheet MULTIMEDIA VIDEO MULTISTANDARD VIDEO DECODER The KS0122 converts analog NTSC or PAL video in composite or S-video format to digitized component video. Output data can be selected for CCIR 601 or square pixel sample rates in either YUV or RGB formats. All required	OCR Scan	KS0122 KS0122 0D3153b 71b4142 100-QFP-1420C	PDF