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    IRFP240 TRANSISTOR Search Results

    IRFP240 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    IRFP240 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFP240 transistor

    Abstract: No abstract text available
    Text: IRFP240 Data Sheet Title FP2 bt A, 0V, 80 m, 20A, 200V, 0.180 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


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    PDF IRFP240 IRFP240 transistor

    IRFP240

    Abstract: irfp240 transistor TA17422 TB334
    Text: IRFP240 Data Sheet January 2002 20A, 200V, 0.180 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of


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    PDF IRFP240 TA17422. O-247 200opment. IRFP240 irfp240 transistor TA17422 TB334

    IRFP240

    Abstract: TA17422 TB334
    Text: IRFP240 Data Sheet July 1999 20A, 200V, 0.180 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of


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    PDF IRFP240 TA17422. O-247 IRFP240 TA17422 TB334

    IRFP240

    Abstract: Harris Semiconductor irfp240 TA17422 irfp243 harris transistors IRFP241
    Text: IRFP240, IRFP241, IRFP242, IRFP243 S E M I C O N D U C T O R 18A and 20A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 18A and 20A, 200V and 150V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


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    PDF IRFP240, IRFP241, IRFP242, IRFP243 TA17422. 1-800-4-HARRIS IRFP240 Harris Semiconductor irfp240 TA17422 irfp243 harris transistors IRFP241

    2SK1058 MOSFET APPLICATION NOTES

    Abstract: BD139 heat sink lm4702 OUTPUT STAGE INFORMATION 2sk1058 2SJ162 2SK1058 specification of 2SK1058 LM4702 BJT BD139 BJT small signal low power BD139 transistor 2sj162
    Text: Introduction How To Choose A MOSFET This application note provides supporting design information regarding National Semiconductor’s newest offering of highperformance, ultra high-fidelity audio amplifier driver ICs. The LM4702 and its derivatives provide a highly reliable, fully


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    PDF LM4702 AN-1645 2SK1058 MOSFET APPLICATION NOTES BD139 heat sink lm4702 OUTPUT STAGE INFORMATION 2sk1058 2SJ162 2SK1058 specification of 2SK1058 BJT BD139 BJT small signal low power BD139 transistor 2sj162

    IRFP240 model

    Abstract: SNAS396D 100v audio amplifier irfp240 circuit diagram amplifier irfp240 NDN0015A Texas Instruments TIP31C irfp9240 circuit diagram LME49830
    Text: LME49830 www.ti.com SNAS396D – JANUARY 2008 – REVISED APRIL 2013 LME49830 Mono High Fidelity 200 Volt MOSFET Power Amplifier Input Stage with Mute Check for Samples: LME49830 FEATURES DESCRIPTION • The LME49830 is a high fidelity audio power amplifier


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    PDF LME49830 SNAS396D LME49830 IRFP240 model SNAS396D 100v audio amplifier irfp240 circuit diagram amplifier irfp240 NDN0015A Texas Instruments TIP31C irfp9240 circuit diagram

    LME49830

    Abstract: No abstract text available
    Text: LME49830 www.ti.com SNAS396D – JANUARY 2008 – REVISED APRIL 2013 LME49830 Mono High Fidelity 200 Volt MOSFET Power Amplifier Input Stage with Mute Check for Samples: LME49830 FEATURES DESCRIPTION • The LME49830 is a high fidelity audio power amplifier


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    PDF LME49830 SNAS396D LME49830

    LME49830

    Abstract: ECQE1106KF ERO-25PHF2400 irfp240 circuit diagram ERO Film Capacitor IRFP240 Vbe multiplier LME49830TB ERO tantalum SIL-PAD to-247
    Text: LME49830 Mono High Fidelity 200 Volt MOSFET Power Amplifier Input Stage with Mute General Description Key Specifications The LME49830 is a high fidelity audio power amplifier input stage designed for demanding consumer and pro-audio applications. Amplifier output power may be scaled by changing


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    PDF LME49830 LME49830 ECQE1106KF ERO-25PHF2400 irfp240 circuit diagram ERO Film Capacitor IRFP240 Vbe multiplier LME49830TB ERO tantalum SIL-PAD to-247

    LME49830

    Abstract: irfp240 circuit diagram LME49830TB SIL-PAD to-247 Vbe multiplier thermal runaway 150018 IRFP240 ECQE1106KF EEUFC1C221 AUDIO MOSFET POWER AMPLIFIER SCHEMATIC
    Text: LME49830 Mono High Fidelity 200 Volt MOSFET Power Amplifier Input Stage with Mute General Description Key Specifications The LME49830 is a high fidelity audio power amplifier input stage designed for demanding consumer and pro-audio applications. Amplifier output power may be scaled by changing


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    PDF LME49830 LME49830 irfp240 circuit diagram LME49830TB SIL-PAD to-247 Vbe multiplier thermal runaway 150018 IRFP240 ECQE1106KF EEUFC1C221 AUDIO MOSFET POWER AMPLIFIER SCHEMATIC

    ckt diagram of rf home security system

    Abstract: LME49830TB LME49830 amplifier irfp240 Vbe multiplier irfp240 RCA Transistor "Audio Power Amplifier" Application Note 2142-0 100v mosfet AUDIO AMPLIFIER CIRCUIT DIAGRAM ERO tantalum
    Text: LME49830 LME49830 Mono High Fidelity 200 Volt MOSFET Power Amplifier Input Stage with Mute Literature Number: SNAS396C LME49830 Mono High Fidelity 200 Volt MOSFET Power Amplifier Input Stage with Mute General Description Key Specifications The LME49830 is a high fidelity audio power amplifier input


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    PDF LME49830 LME49830 SNAS396C ckt diagram of rf home security system LME49830TB amplifier irfp240 Vbe multiplier irfp240 RCA Transistor "Audio Power Amplifier" Application Note 2142-0 100v mosfet AUDIO AMPLIFIER CIRCUIT DIAGRAM ERO tantalum

    IRFBE30 equivalent

    Abstract: irf9640 REPLACEMENT GUIDE IRGKI200F06 IRGP440U replacement IRF3205 smd IRGBC20FD2 IRFK3D450 IRFBg30 equivalent IRGNIN150M06 irc540
    Text: Electronic Switches Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  HEXFET Power MOSFETs Description Gen Package Document # Pages Date 11 10 12 7 May-97 May-97 91615 91650 91651 90454 90592 90565 90566


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    PDF May-97 Sep-95 Sep-94 IRFBE30 equivalent irf9640 REPLACEMENT GUIDE IRGKI200F06 IRGP440U replacement IRF3205 smd IRGBC20FD2 IRFK3D450 IRFBg30 equivalent IRGNIN150M06 irc540

    IRF734

    Abstract: irf9640 REPLACEMENT GUIDE IRF3205 smd IRGTI165F06 irg4pc50fd *g4pc50w IRGKI115U06 IRGTI200F06 *gBC20f IRLIZ34
    Text: Electronic Switches Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 HEXFET Power MOSFETs Description Gen Package Document # Pages Date 11 10 12 7 May-97 May-97 91615 91650 91651 90454 90592 90565 90566


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    PDF FA38SA50LC OT-227 FA57SA50LC FB180SA10 IRC530 O-220 IRC540 IRF734 irf9640 REPLACEMENT GUIDE IRF3205 smd IRGTI165F06 irg4pc50fd *g4pc50w IRGKI115U06 IRGTI200F06 *gBC20f IRLIZ34

    LM49830

    Abstract: 150w audio amplifier circuit diagram class AB 2sk1058 2SJ162 LME49830 12v 300W AUDIO AMPLIFIER CIRCUIT DIAGRAM lm4702 OUTPUT STAGE INFORMATION AN-1850 transistor 2sj162 450w power supply schematic diagram AN1645
    Text: National Semiconductor Application Note 1850 Troy Huebner John DeCelles July 1, 2008 Introduction validate the solution’s sonic performance in the desired test environment. The solution presented has undergone listening evaluations in a dedicated sound room for verification of sonic


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    PDF LME49830 EF125WT1 AN-1850 LM49830 150w audio amplifier circuit diagram class AB 2sk1058 2SJ162 12v 300W AUDIO AMPLIFIER CIRCUIT DIAGRAM lm4702 OUTPUT STAGE INFORMATION AN-1850 transistor 2sj162 450w power supply schematic diagram AN1645

    LM49830

    Abstract: Audio Power Amplifier MOSFET TOSHIBA high power fet audio amplifier schematic 300w power amplifier circuit diagram 150w audio amplifier circuit diagram class AB lm4702 OUTPUT STAGE INFORMATION lme49830 2sk1058 2SJ162 12v 300W AUDIO AMPLIFIER CIRCUIT DIAGRAM 300w mosfet audio amplifier circuit diagram
    Text: National Semiconductor Application Note 1850 Troy Huebner John DeCelles December 2, 2008 Introduction validate the solution’s sonic performance in the desired test environment. The solution presented has undergone listening evaluations in a dedicated sound room for verification of sonic


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    PDF LME49830 EF125WT1 AN-1850 LM49830 Audio Power Amplifier MOSFET TOSHIBA high power fet audio amplifier schematic 300w power amplifier circuit diagram 150w audio amplifier circuit diagram class AB lm4702 OUTPUT STAGE INFORMATION 2sk1058 2SJ162 12v 300W AUDIO AMPLIFIER CIRCUIT DIAGRAM 300w mosfet audio amplifier circuit diagram

    LME49830

    Abstract: an1850 150W TRANSISTOR AUDIO AMPLIFIER LM49830 AN-1850 SNAA058B
    Text: Application Report SNAA058B – July 2008 – Revised May 2013 AN-1850 LME49830TB Ultra-High Fidelity High Power Amplifier Reference Design .


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    PDF SNAA058B AN-1850 LME49830TB LME49830 an1850 150W TRANSISTOR AUDIO AMPLIFIER LM49830 SNAA058B

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


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    PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    TRANSISTOR DATASHEET D1555

    Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
    Text: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440


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    PDF 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 TRANSISTOR DATASHEET D1555 d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878

    irfp240

    Abstract: irfp240 circuit diagram IRFP240FI 71513 schematic diagram UPS irfp240f
    Text: 2 ^ 5 3 7 0 0 4 S 733 S 3 T • SGTH SCS-THOMSON IRFP240 IRFP240FI ID MaiOT(ö MS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRFP240 IRFP240FI . ■ . . V dss RüS(on) Id 200 V 200 V < 0.18 n < 0.18 Q 20 A 12 A TYPICAL RDS(on) = 0.145 Q AVALANCHE RUGGED TECHNOLOGY


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    PDF 00M5733 IRFP240 IRFP240FI IRFP240 IRFP240FI IRFP240/FI 004S73Ã irfp240 circuit diagram 71513 schematic diagram UPS irfp240f

    Untitled

    Abstract: No abstract text available
    Text: IRFP240 Semiconductor Data Sheet July 1999 20A, 200V, 0.180 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


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    PDF IRFP240 O-247 180i2

    TO218 package

    Abstract: irfp240 irfp240 circuit diagram IRFP240FI TO-218 Package
    Text: SGS-THOMSON :U OT KS IRFP240 IRFP240FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IR FP240 IRFP240FI . • . . V dss RüS(on Id 200 V 200 V 0.18 n 0.18 Q 20 A 13 A AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C


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    PDF IRFP240 IRFP240FI FP240 FP240 FP240FI 15racteristics IRFP240/H IRFP240/FI TO218 package irfp240 circuit diagram IRFP240FI TO-218 Package

    Untitled

    Abstract: No abstract text available
    Text: tyvvys S IRFP240, IRFP241, IRFP242, IRFP243 Semiconductor y y 18A and 20A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 18A and 20A, 200V and 150V • High Input Impedance These are N-Channel enhancement mode silicon gate


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    PDF IRFP240, IRFP241, IRFP242, IRFP243

    1RFP240

    Abstract: IRFP240 IRFP241 IRFP243 1fp2 irf 4710 IRFP 450 IRFP242 Part number 543 20 018 00 c485
    Text: INTERNATIONAL RECTIFIER HE D 1 4055455 OOGfi734 Data Sheet No. PD-9.444B INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER IÖ R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRFP240 IRFP241 IRFPS42 IRFP243 N-CHANNEL Product Summary 200 Volt, 0.18 Ohm HEXFET


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    PDF 5S45E IRFP241 O-247AC C-489 IRFP240, IRFP241, IRFP242, IRFP243 T-39-13 C-490 1RFP240 IRFP240 IRFP241 1fp2 irf 4710 IRFP 450 IRFP242 Part number 543 20 018 00 c485

    irfp240

    Abstract: IRFP242 IRFP243 Harris Semiconductor irfp240 Mosfet irfp240
    Text: H a IRFP240, IRFP241, IRFP242, IRFP243 r r i s ” “ I CONDUCTOE 18A and 20A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 18A and 20A, 200V and 150V • High Input Im pedance These are N-Channel enhancement mode silicon gate


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    PDF IRFP240, IRFP241, IRFP242, IRFP243 TA1742s 1-800-4-HARRIS irfp240 IRFP242 IRFP243 Harris Semiconductor irfp240 Mosfet irfp240

    harris

    Abstract: h20 mosfet IRFP240 Harris Semiconductor Harris Semiconductor irfp240 415A IRF240 IRF640 PCF240D transistor AL
    Text: H A RR IS S E M I C O N D SE CT OR bflE D • M30 2 27 1 O O S l l l b 034 ■ HAS PCF240W PCF240D HARRIS S E M I C O N D U C T O R January1993 N-Channel MOS Chip Features Die • Passivated • Contact Metallization - Gate and Source - Aluminum - Drain • Tri-Metal Al-Tl-Nl


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    PDF M3D3271 PCF240W PCF240D Mil-Std-750, IRF640 IRFP240 IRF240 PCF240W PCF240D 170x200 harris h20 mosfet IRFP240 Harris Semiconductor Harris Semiconductor irfp240 415A IRF240 IRF640 transistor AL