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    IRFP232 Search Results

    IRFP232 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFP232 Unknown FET Data Book Scan PDF

    IRFP232 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SSH60N06

    Abstract: IRFP141 IRFP142 IRFP143 Irfp250 irfp254 IRFP230 IRFP242 IRFP130 IRFP333 SSH40N15A
    Text: POWER MOSFETs FUNCTION GUIDE TO-3P N-CHANNEL BVdss V ID(onXA) RDS(onXG) Part Number 60.00 60.00 60.00 0.03 0.025 SSH60N06 SSH60N06A 80.00 12.00 14.00 25.00 28.00 34.00 40.00 0.23 0.16 0.10 0.077 0.080 0.055 IRFP133 IRFP131 IRFP143 IRFP141 IRFP153 IRFP151


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    PDF SSH60N06 SSH60N06A IRFP133 IRFP131 IRFP143 IRFP141 IRFP153 IRFP151 IRFP132 IRFP130 IRFP142 Irfp250 irfp254 IRFP230 IRFP242 IRFP333 SSH40N15A

    IRF630

    Abstract: IRFP230 for IRF630 F632 IRFP231 IRF630 mosfet IRF633 ade 633 IRF632 IRFP233
    Text: IRF630/631Z632/633 IR FP230/231/232/233 N-CHANNEL POWER MOSFETS FEATURES TO-220 • Low er R ds <on • • • • • Improved inductive ruggedness Fast switching times Rugged polysilfcon gate cell structure Lower input capacitance Extended safe operating area


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    PDF IRF630/631Z632/633 FP230/231/232/233 O-220 IRF630/IRFP230 IRF631 /IRFP231 IRF632/IRFP232 IRF633/IRFP233 IRF630/631/632/633 IRFP230/231/232/233 IRF630 IRFP230 for IRF630 F632 IRFP231 IRF630 mosfet IRF633 ade 633 IRF632 IRFP233

    IRF740 "direct replacement"

    Abstract: irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI IRF9613 rca9213a buz11 cross reference sgsp467 fu120
    Text: CROSS REFERENCE GUIDE POWER MOSFETs Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­


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    PDF IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRF610 IRF611 IRF740 "direct replacement" irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI IRF9613 rca9213a buz11 cross reference sgsp467 fu120

    IRFP231

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E » • 7^1=4142 G0121ÛS ST1 ■ SM6 K IRF630/631/632/633 IRFP230/231Z232/233 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • TO-220 Lower R d s ON Improved Inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


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    PDF G0121Ã IRF630/631/632/633 IRFP230/231Z232/233 O-220 /IRFP231 IRFP230/231/232/233 ib414E IRFP231