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    IRFP 450 Search Results

    IRFP 450 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    AFE8221IRFPQ1 Texas Instruments Automotive Catalog Dual IF Interface for Digital Radio 144-HTQFP -40 to 85 Visit Texas Instruments Buy
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    IRFP 450 Price and Stock

    Vishay Siliconix IRFP450PBF

    MOSFET N-CH 500V 14A TO247-3
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    DigiKey IRFP450PBF Tube 2,150 1
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    RS IRFP450PBF Bulk 500
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    ComSIT USA IRFP450PBF 404
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    New Advantage Corporation IRFP450PBF 12,850 1
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    Vishay Siliconix IRFP450APBF

    MOSFET N-CH 500V 14A TO247-3
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    DigiKey IRFP450APBF Tube 374 1
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    RS IRFP450APBF Bulk 500
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    New Advantage Corporation IRFP450APBF 3,975 1
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    Vishay Siliconix IRFP450LCPBF

    MOSFET N-CH 500V 14A TO247-3
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    DigiKey IRFP450LCPBF Tube 20 1
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    IXYS Corporation IRFP450

    MOSFET N-CH 500V 14A TO247AD
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    DigiKey IRFP450 Tube 30
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    Quest Components IRFP450 80
    • 1 $3.21
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    STMicroelectronics IRFP450

    MOSFET N-CH 500V 14A TO247-3
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    DigiKey IRFP450 Tube 600
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    Bristol Electronics IRFP450 30
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    IRFP 450 Datasheets (67)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFP450 Harris Semiconductor Power MOSFET Selection Guide Original PDF
    IRFP450 International Rectifier 500V Single N-Channel HEXFET Power MOSFET in a TO-247AC package Original PDF
    IRFP450 Intersil 14A, 500V, 0.400 ?, N-Channel Power MOSFET Original PDF
    IRFP450 IXYS 500V standart power MOSFET Original PDF
    IRFP450 STMicroelectronics POWER SCHOTTKY RECTIFIER Original PDF
    IRFP450 STMicroelectronics N-Channel 500 V - 0.31 ohm - 14 A TO-247 PowerMESH II MOSFET Original PDF
    IRFP450 STMicroelectronics N - CHANNEL 400V - 0.48 W - 10 A - TO-220 PowerMESH] MOSFET Original PDF
    IRFP450 STMicroelectronics N-Channel Power MOSFET Original PDF
    IRFP450 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFP450 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 14A TO-247AC Original PDF
    IRFP450 Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRFP450 FCI POWER MOSFETs Scan PDF
    IRFP450 Frederick Components Power MOSFET Selection Guide Scan PDF
    IRFP450 General Electric Power Transistor Data Book 1985 Scan PDF
    IRFP450 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFP450 International Rectifier Power MOSFET Scan PDF
    IRFP450 International Rectifier Power MOSFET(Vdss=500V, Rds(on)=0.40ohm, Id=14A) Scan PDF
    IRFP450 International Rectifier TO-247 HEXFET Power MOSFETs Scan PDF
    IRFP450 International Rectifier TO-247 N-Channel Plastic Package HEXFETs Scan PDF
    IRFP450 International Rectifier N-Channel Power MOSFETs Scan PDF

    IRFP 450 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    20nc50

    Abstract: IRFP 450 irfp
    Text: Standard Power MOSFET IRFP 450 VDSS ID cont RDS(on) = 500 V = 14 A = 0.40 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 500 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient


    Original
    O-247 20nc50 IRFP 450 irfp PDF

    IRFP 450 application

    Abstract: GD15-0 IRFP 640 20NC50 IRFP P CHANNEL transistor irfp IRFP 450
    Text: IRFP 450 Standard Power MOSFET VDSS = 500 V ID cont = 14 A RDS(on) = 0.40 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: MegaMOSTMFET IRFP 360 VDSS = 400 V ID25 = 23 A RDS on = 0.20 Ω N-Channel Enhancement Mode Preliminary data Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1.0 MΩ 400 400 V V VGS VGSM Continuous Transient


    Original
    ID100 PDF

    Untitled

    Abstract: No abstract text available
    Text: MegaMOSTM Power MOSFET IRFP 460 VDSS ID cont RDS(on) = 500 V = 20 A Ω = 0.27Ω N-Channel Enhancement Mode, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous


    Original
    125OC 100ms Figure10. PDF

    IRFP 640

    Abstract: IRFP P CHANNEL IRFP P CHANNEL MOSFET IRFP 460 datasheet transistor irfp irfp 460 IRFP 125OC 23/IRFP 460
    Text: MegaMOSTM Power MOSFET IRFP 460 VDSS ID cont RDS(on) = 500 V = 20 A Ω = 0.27Ω N-Channel Enhancement Mode, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous


    Original
    O-247 125OC 100ms Figure10. IRFP 640 IRFP P CHANNEL IRFP P CHANNEL MOSFET IRFP 460 datasheet transistor irfp irfp 460 IRFP 125OC 23/IRFP 460 PDF

    MOSFET 11N80 Data sheet

    Abstract: MOSFET 11N80 6N80 IXTN 36N50 C 11n80 ixys ixtn 79n20 ixys ixtn 36n50 6n90 12n100 IRFP 640
    Text: Standard MOSFET T-Series MegaMOSTMFET Standard MOSFET T-Series Contents VDSS max TO-247 TO-220 IXTP TO-263 (IXTA) TO-264 miniBLOC (IXTN) ID(cont) TC = 25 °C A R DS(on) TC = 25 °C Ω 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 C2-4 200 30 0.085 IRFP 250


    Original
    O-247 O-220 O-263 O-264 67N10 75N10 50N20 C2-10 C2-18 C2-20 MOSFET 11N80 Data sheet MOSFET 11N80 6N80 IXTN 36N50 C 11n80 ixys ixtn 79n20 ixys ixtn 36n50 6n90 12n100 IRFP 640 PDF

    IRFP

    Abstract: No abstract text available
    Text: IRFP 470 VDSS MegaMOSTMFET ID cont RDS(on) = 500 V = 24 A = 0.23 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 500 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30


    Original
    O-247 IRFP PDF

    IRFP 640

    Abstract: ID100 irfp 360
    Text: MegaMOSTMFET IRFP 360 VDSS = 400 V = 23 A ID25 RDS on = 0.20 Ω N-Channel Enhancement Mode Preliminary data Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1.0 MΩ 400 400 V V VGS VGSM Continuous Transient


    Original
    ID100 IRFP 640 ID100 irfp 360 PDF

    IRFP 640

    Abstract: IRFP P CHANNEL IRFP 450 application
    Text: MegaMOSTMFET IRFP 470 VDSS = 500 V ID cont = 24 A RDS(on) = 0.23 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30


    Original
    PDF

    IRFP 640

    Abstract: No abstract text available
    Text: MegaMOSTMFET IRFP 470 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V V GS Continuous ±20 V VGSM Transient ±30 V I D25 TC = 25°C 24 A I DM TC = 25°C, pulse width limited by TJM


    Original
    O-247 IRFP 640 PDF

    IRFP 260 M

    Abstract: 5n100 6n80 42n20 12N50A IRFP IXTN 36N50 C 67N10 irfp 240
    Text: Standard Power MOSFETs and MegaMOS FETs N-Channel Enhancement-Mode Tjh = ► New IXTH IXTH IRFP IXTH IXTH IRFP IXTH IXTH IXTH IRFP IXTH IRFP IXTH ► IXTH IXTH IXTH ► IXTH ► IXTU ►IXTU IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH


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    67N10 75N10 42N20 50N20 35N30 40N30 12N50A 21N50 24N50 30N50 IRFP 260 M 5n100 6n80 IRFP IXTN 36N50 C irfp 240 PDF

    11n80

    Abstract: ixys ixth 21N50 C2100 G264 2N100 ixth75n10 74N20 C2104 C294 13n80
    Text: Contents D V OSS max Tc = 2 5 “C Tc = 2 5 °C V A Q 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 200 30 0.085 IRFP 250 42 50 0.06 0.045 IXTH 42N20 IXTH 50N20 74 0.035 IXTH 68N20 85 0.025 23 0.14 IRFP 254 C2-20 38 0.075 IRFP 264 C2-22 35 40 0.1 0.085 0.088


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    O-247 O-251 O-204 O-264 15N60 20N60 15N70 01N80* 35N30 40N30 11n80 ixys ixth 21N50 C2100 G264 2N100 ixth75n10 74N20 C2104 C294 13n80 PDF

    IRFP 450 application

    Abstract: IRFP P CHANNEL switching with IRFP450 schematic transistor irfp tr irfp450 IRFP453FI IRFP transistors irfp 150
    Text: r Z Z SGS-THOMSON ^7#» M tM IIL iO T * ! IRFP 450/FI-451/FI IRFP 452/FI-453/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS IRFP450 IRFP450FI 500 V 500 V 0.4 0.4 IRFP451 IRFP451FI 450 V 450 V 0.4 0.4 IRFP452 IRFP452FI 500 V 500 V 0.5 0.5


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    450/FI-451/FI 452/FI-453/FI IRFP450 IRFP450FI IRFP451 IRFP451FI IRFP452 IRFP452FI IRFP453 IRFP453FI IRFP 450 application IRFP P CHANNEL switching with IRFP450 schematic transistor irfp tr irfp450 IRFP453FI IRFP transistors irfp 150 PDF

    IRFP 450 application

    Abstract: transistor irfp IRFP 450 SCHEMATIC WITH IRFP 450 IRFP450F irfp hi power power switching with IRFP450 schematic IRFP453FI irfp
    Text: F Z 7 S G S -T H O M S O N *7Æ» IRFP 450/FI-451/FI IRFP 452/FI-453/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS IRFP450 IRFP450FI IRFP451 IRFP451FI IRFP452 IRFP452FI IRFP453 IRFP453FI 500 500 450 450 500 500 450 450 V V V V V V V V ^DS<on


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    450/FI-451/FI 452/FI-453/FI IRFP450 IRFP450FI IRFP451 IRFP451FI IRFP452 IRFP452FI IRFP453 IRFP453FI IRFP 450 application transistor irfp IRFP 450 SCHEMATIC WITH IRFP 450 IRFP450F irfp hi power power switching with IRFP450 schematic IRFP453FI irfp PDF

    IRFP 640

    Abstract: mosfet irfp 250 N
    Text: IXYS Standard Power MOSFET IRFP 450 VDSS ID cont P DS(on) 500 V 14 A 0.40 f t N-Channel Enhancement Mode Symbol Test Conditions v DSS Tj =25°Cto150°C 500 V vDGR ^ 500 V Vos v GSM Continuous ±20 V Transient ±30 V ^D25 Tc =25°C 14 A Tc = 25° C, pulse width limited by TJM


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    Cto150 O-247 00A/ns, pro45 IRFP 640 mosfet irfp 250 N PDF

    Untitled

    Abstract: No abstract text available
    Text: iPIXYS MegaMOS FET IRFP 360 VDSS = 400 V = 23 A = 0.20 ß ^D25 R DS on N-Channel Enhancement Mode ?D G Preliminary data ¿s Maximum Ratings Symbol Test Conditions V Tj = 25°C to 150°C T j = 25°C to 1S0°C; Ros= 1.0 M£2 400 400 V V Continuous T ransient


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    O-247 C2-29 PDF

    Untitled

    Abstract: No abstract text available
    Text: inixYS MegaMOS FET IRFP 470 V DSS I D cont D DS(on) 500 V 24 A 0.23 Q N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V OSS Tj =25°Cto150°C 500 V v DGR Tj = 25° C to 150° C; RGS= 1 M£2 500 V Vos Continuous ±20 V v GSM Transient


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    Cto150 O-247AD PDF

    IXTN 36N50 C

    Abstract: ixys ixth 21N50 mosfet irfp 250 N c226 C278 C2100 13N110 C258 IRFP ixys ixtn 36n50
    Text: n ix Y S Standard UOSFET T-Series \ Contents v DSS max ^D^cont C= 25 °C TO-247 □ DS on) Tc = 25 °C TO-220 (IXTP) TO-263 (IXTA) TO-264 miniBLOC (DON) Page ♦ V A £i 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 C2-4 200 30 0.085 IRFP 250 C2-8 50 0.045 IXTH 50N20


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    O-247 O-220 O-263 O-264 67N10 75N10 50N20 79N20 35N30 40N30 IXTN 36N50 C ixys ixth 21N50 mosfet irfp 250 N c226 C278 C2100 13N110 C258 IRFP ixys ixtn 36n50 PDF

    irfp 250m

    Abstract: No abstract text available
    Text: IDIXYS IRFP 360 VDSS MegaMOSraF E T I D25 R DS on 400 V 23 A 0.20 ft N-Channel Enhancement Mode Preliminary data Symbol Test Conditions V Tj = 25°C to 150°C T,J = 25°C to 150°C; RrU b„ = 1.0 M£2 400 400 V V Continuous Transient ±20 ±30 V V Tc = 25°C


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    O-247AD irfp 250m PDF

    RFP450

    Abstract: IRFP RE 40 IRFP 450 FP450 IRFP450FI
    Text: w SGS-THOMSON N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE W R FP450 IR F P 4 5 0 F I I IR FP 451 IR FP 451 FI . . . IRFP450/FI IRFP451/FI ;LiO T «s V dss R DS on Id 500 V 500 V 0 .4 a 0 .4 i l 14 A 9 A 450 V 450 V 0 .4 £2 0.4 £2 14 A 9 A


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    FP450 IRFP450/FI IRFP451/FI 450/FI 452/FI 453/FI 451/FI RFP450 IRFP RE 40 IRFP 450 IRFP450FI PDF

    power switching with IRFP450 schematic

    Abstract: application IRFP450 IRFP 450 application irfp transistor irfp switching with IRFP450 schematic SCHEMATIC WITH IRFP 450 IRFP P CHANNEL SMPS CIRCUIT DIAGRAM USING TRANSISTORS IRFP453FI
    Text: 3DE D DQSTôB? T • [ Z T S G S -T H O M S O N * 7 # ^ [ » » 1 ™ * ^ - s TYPE VDSs 500 500 450 450 500 500 450 450 V V V V V V V V IR F P 4 5 0 / F I - 4 5 1 /F I IR F P 4 5 2 / F I - 4 5 3 /F I N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS


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    450/FI-451/FI 452/FI-453/FI IRFP450 IRFP450FI IRFP451 IRFP451FI IRFP452 IRFP452FI IRFP453 IRFP453FI power switching with IRFP450 schematic application IRFP450 IRFP 450 application irfp transistor irfp switching with IRFP450 schematic SCHEMATIC WITH IRFP 450 IRFP P CHANNEL SMPS CIRCUIT DIAGRAM USING TRANSISTORS PDF

    IRFP 640

    Abstract: IRFP 260 M 6N80A 0 280 130 023 IRFP 24n50 5N10 IXTM20N60 6N90A 01N100
    Text: Standard Power MOSFETs and MegaMOSmFETs T series Standard types t jm = ► New 150°c V T c = 25°C A R c es DS on Tc = 25°C Q tr typ. 25aC ns Qfl ^ th J C Po max. max. nC K/W W 260 0.42 300 6 180 285 360 400 140 220 0.65 0.42 190 300 150 280 370 370 140


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    135XTP 01N100 1N100 2N100 2N100 100X2 01N100X3 O-251, O-220AB IRFP 640 IRFP 260 M 6N80A 0 280 130 023 IRFP 24n50 5N10 IXTM20N60 6N90A 01N100 PDF

    75N1

    Abstract: 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 42N20 ixtn 44N50 KS 4400 204 3B
    Text: HiPerF ET Power MOSFETs ?D g UE D f N-Channel Enhancement-Mode with Fast Intrinsic Diode Type V DSS max. ► New ► IXFH 76N07-11 ► IXFH 76N07-12 IXFH IXFH IXFH IXFH IXFH 67N10 75N10 42N20 50N20 58N20 V 70 100 200 IXFH 35N30 IXFH 40N30 300 IXFH IXFH


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    76N07-11 76N07-12 67N10 75N10 42N20 50N20 58N20 O-247 O-204 75N1 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 ixtn 44N50 KS 4400 204 3B PDF

    IRFP 740

    Abstract: IRF 810 IRF 426 irf transistors irfp 730 BUZ 82 Diodes BUZ C 840 irf 840 Diodes BUZ 840 BU 102
    Text: L^mg SGS-THOMSON consumer A / f M M iL K gW M tSS TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION 'c v CBO v CEO ptot A (V) (V) <W) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400 330 330 6 6


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    MTP3N60 MTH6N60 MTP6N60 IRFP 740 IRF 810 IRF 426 irf transistors irfp 730 BUZ 82 Diodes BUZ C 840 irf 840 Diodes BUZ 840 BU 102 PDF