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    IRFI630 Price and Stock

    Vishay Siliconix IRFI630GPBF

    MOSFET N-CH 200V 5.9A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFI630GPBF Tube 1,615 1
    • 1 $3.57
    • 10 $3.57
    • 100 $3.57
    • 1000 $1.23287
    • 10000 $1.16271
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    Vishay Siliconix IRFI630G

    MOSFET N-CH 200V 5.9A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFI630G Tube 1,000
    • 1 -
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    • 1000 $2.9625
    • 10000 $2.9625
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    Bristol Electronics IRFI630G 400
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    Quest Components IRFI630G 320
    • 1 $7.44
    • 10 $7.44
    • 100 $4.588
    • 1000 $4.092
    • 10000 $4.092
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    Rochester Electronics LLC IRFI630BTU

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFI630BTU Bulk 1,211
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    • 10000 $0.25
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    Vishay Intertechnologies IRFI630GPBF

    MOSFET N-CHANNEL 200V - Tape and Reel (Alt: IRFI630GPBF)
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    Avnet Americas IRFI630GPBF Reel 12 Weeks 1,000
    • 1 -
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    • 1000 $1.24875
    • 10000 $1.17529
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    Mouser Electronics IRFI630GPBF 1,037
    • 1 $2.49
    • 10 $1.56
    • 100 $1.38
    • 1000 $1.17
    • 10000 $1.17
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    TTI IRFI630GPBF Tube 500 50
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    • 100 $1.38
    • 1000 $1.16
    • 10000 $1.14
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    TME IRFI630GPBF 795 1
    • 1 $2.62
    • 10 $2.62
    • 100 $0.84
    • 1000 $0.73
    • 10000 $0.73
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    ComSIT USA IRFI630GPBF 450
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    EBV Elektronik IRFI630GPBF 13 Weeks 50
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    New Advantage Corporation IRFI630GPBF 500 1
    • 1 -
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    • 100 $0.7
    • 1000 $0.65
    • 10000 $0.65
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    International Rectifier IRFI630

    TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,6.3A I(D),TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRFI630 100
    • 1 $1.875
    • 10 $1.875
    • 100 $1.125
    • 1000 $1.125
    • 10000 $1.125
    		Buy Now
    Find more IRFI630 price and stock on Findchips.com

    IRFI630 Datasheets (21)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFI630 Fairchild Semiconductor 200V N-Channel MOSFET Original PDF
    IRFI630 International Rectifier Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=5.9A) Scan PDF
    IRFI630 International Rectifier FullPak - Fully Isolated HEXFET Scan PDF
    IRFI630A Fairchild Semiconductor Advanced Power MOSFET Original PDF
    IRFI630A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFI630A Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRFI630B Fairchild Semiconductor 200 V N-Channel MOSFET Original PDF
    IRFI630B Fairchild Semiconductor 200V N-Channel MOSFET Original PDF
    IRFI630BTU Fairchild Semiconductor 200V N-Channel B-FET / Substitute of IRFI630A Original PDF
    IRFI630BTU_FP001 Fairchild Semiconductor 200V N-Channel B-FET / Substitute of IRFI630A Original PDF
    IRFI630G International Rectifier 200V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Original PDF
    IRFI630G Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFI630G Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 5.9A TO220FP Original PDF
    IRFI630G International Rectifier HEXFET Power MOSFET Scan PDF
    IRFI630G International Rectifier Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=5.9A) Scan PDF
    IRFI630G International Rectifier HEXFET Power MOSFET Scan PDF
    IRFI630G International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, N Channel, Power, 200V, 5.9A, Pkg Style Fully Isolated TO-220 Fullpak Scan PDF
    IRFI630G Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFI630G Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFI630GPBF International Rectifier 100V Single N-Channel Lead-Free HEXFET Power MOSFET in a TO-220 FullPAK package Original PDF

    IRFI630 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFI630G, SiHFI630G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance


    Original     		IRFI630G, SiHFI630G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFI630G, SiHFI630G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance


    Original     		IRFI630G, SiHFI630G O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFI630G, SiHFI630G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance


    Original     		IRFI630G, SiHFI630G O-220 12-Mar-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFI630 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V) I(D) Max. (A)6.3 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)25 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)32 Minimum Operating Temp (øC)


    Original     		IRFI630 PDF

    IRFI630G

    Abstract: SiHFI630G SiHFI630G-E3
    Text: IRFI630G, SiHFI630G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance


    Original     		IRFI630G, SiHFI630G O-220 11-Mar-11 IRFI630G SiHFI630G-E3 PDF

    AN609

    Abstract: IRFI630G SiHFI630G
    Text: IRFI630G_RC, SiHFI630G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		IRFI630G SiHFI630G AN609, 06-May-10 AN609 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFW630B / IRFI630B IRFW630B / IRFI630B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		IRFW630B IRFI630B O-262 I630B IRFI630B IRFI630BTU FP001 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFW630B / IRFI630B IRFW630B / IRFI630B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		IRFW630B IRFI630B PDF

    IRFI630B

    Abstract: IRFW630B
    Text: IRFW630B / IRFI630B IRFW630B / IRFI630B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		IRFW630B IRFI630B IRFI630B PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFI630G, SiHFI630G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance


    Original     		IRFI630G, SiHFI630G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94846 IRFI630GPbF • Lead-Free 11/14/03 Document Number: 91148 www.vishay.com 1 IRFI630GPbF Document Number: 91148 www.vishay.com 2 IRFI630GPbF Document Number: 91148 www.vishay.com 3 IRFI630GPbF Document Number: 91148 www.vishay.com 4 IRFI630GPbF Document Number: 91148


    Original     		IRFI630GPbF O-220 12-Mar-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94846 IRFI630GPbF • Lead-Free 11/14/03 Document Number: 91148 www.vishay.com 1 IRFI630GPbF Document Number: 91148 www.vishay.com 2 IRFI630GPbF Document Number: 91148 www.vishay.com 3 IRFI630GPbF Document Number: 91148 www.vishay.com 4 IRFI630GPbF Document Number: 91148


    Original     		IRFI630GPbF O-220 08-Mar-07 PDF

    IRFI630B

    Abstract: IRFW630B
    Text: IRFW630B / IRFI630B IRFW630B / IRFI630B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		IRFW630B IRFI630B IRFI630B PDF

    N-Channel 40V MOSFET

    Abstract: 125 diode IRFW630B N-Channel MOSFET 200v IRFI630B
    Text: IRFW630B / IRFI630B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		IRFW630B IRFI630B N-Channel 40V MOSFET 125 diode N-Channel MOSFET 200v IRFI630B PDF

    IRFI630G

    Abstract: SiHFI630G SiHFI630G-E3
    Text: IRFI630G, SiHFI630G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance


    Original     		IRFI630G, SiHFI630G O-220 18-Jul-08 IRFI630G SiHFI630G-E3 PDF

    W630B

    Abstract: No abstract text available
    Text: IRFW630B / IRFI630B IRFW630B / IRFI630B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		IRFW630B IRFI630B O-263 W630B IRFW630BTM FP001 W630B PDF

    94846

    Abstract: No abstract text available
    Text: PD - 94846 IRFI630GPbF • Lead-Free www.irf.com 1 11/14/03 IRFI630GPbF 2 www.irf.com IRFI630GPbF www.irf.com 3 IRFI630GPbF 4 www.irf.com IRFI630GPbF www.irf.com 5 IRFI630GPbF 6 www.irf.com IRFI630GPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters inches


    Original     		IRFI630GPbF O-220 94846 PDF

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 PDF

    IRGKI165F06

    Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
    Text: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)


    Original     		OT-23) IRLML2402* IRLML2803 IRLML5103 IRLML6302* IRGKI165F06 IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103 PDF

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original     		BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587 PDF

    IRFI630G

    Abstract: 59-A
    Text: PD-9.652A International S Rectifier IRFI630G HEXFET P ow er M O S FE T • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance D 111 Vdss = 200V \ G \ R DS on =


    OCR Scan     		IRFI630G O-220 IRFI630G 59-A PDF

    IRF1630

    Abstract: irf1630g IRF163 1RF16 59-A IRFI630G 9652A
    Text: PD-9.652A International SS Rectifier IRFI630G HEXFET Power MOSFET • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS ® Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance ^DSS - 200V ^DS on = 0 - 4 0 0 lD = 5.9A


    OCR Scan     		IRFI630G RF1630G IRF1630 irf1630g IRF163 1RF16 59-A 9652A PDF

    Untitled

    Abstract: No abstract text available
    Text: International iQR R ectifier HEXFET P o w e r M O S F E T • • • • • 465545E DD151E4 =136 * I N R PD-9.652A IRFI630G IN T E R N A T IO N A L R E C T IF IE R Isolated Package High Voltage lsolation= 2.5KVRM S Sink to Lead Creepage Dist - 4.8mm


    OCR Scan     		465545E DD151E4 IRFI630G O-220 PDF

    irf1740

    Abstract: IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640
    Text: PRODUCT GUIDE D/I- PAK N-Channel Standard FET Part Number SSR3055A BV DSS (V) (A) (0» cfes (pF) I D R DSM Q Po (nC) fC/W) (W) Page 8 0.150 280 17 7.04 18 Vol.1 IRFR014A 8.2 0.140 280 17 7.04 18 Vol.1 IRFR024A 15 0.070 600 32 4.14 30 Vol.1 IRFR034A 23 0.040


    OCR Scan     		SSR3055A IRFR014A IRFR024A IRFR034A IRFR110A IRFR120A IRFR130A IRFR210A IRFR220A IRFR230A irf1740 IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640 PDF