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    IRFW630B Price and Stock

    Flip Electronics IRFW630BTM-FP001

    MOSFET N-CH 200V 9A D2PAK
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    DigiKey IRFW630BTM-FP001 Reel 4,000 4,000
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    Rochester Electronics LLC IRFW630BTM_FP001

    9A, 200V, 0.4OHM, N-CHANNEL
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    DigiKey IRFW630BTM_FP001 Bulk 800 800
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    onsemi IRFW630BTM-FP001

    MOSFET N-CH 200V 9A D2PAK
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    DigiKey IRFW630BTM-FP001 Reel
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    Flip Electronics IRFW630BTM-FP001 4,000
    • 1 $0.128
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    onsemi IRFW630BTM_FP001

    Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRFW630BTM-FP001)
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    Avnet Americas IRFW630BTM_FP001 Reel 0 Weeks, 2 Days 3,907
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    IRFW630BTM_FP001 Bulk 4 Weeks 1
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    Fairchild Semiconductor Corporation IRFW630BTM_FP001

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    Bristol Electronics IRFW630BTM_FP001 74
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    Quest Components IRFW630BTM_FP001 59
    • 1 $1.9
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    Rochester Electronics IRFW630BTM_FP001 800 1
    • 1 $0.4323
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    • 100 $0.4064
    • 1000 $0.3675
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    Find more IRFW630B price and stock on Findchips.com

    IRFW630B Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRFW630B Fairchild Semiconductor 200V N-Channel MOSFET Original PDF
    IRFW630B Fairchild Semiconductor 200 V N-Channel MOSFET Original PDF
    IRFW630BTM Fairchild Semiconductor 200V N-Channel B-FET / Substitute of IRFW630A Original PDF
    IRFW630BTM_FP001 Fairchild Semiconductor 200V N-Channel B-FET / Substitute of IRFW630A Original PDF
    IRFW630BTM_FP001 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 9A D2PAK Original PDF
    IRFW630BTM-FP001 ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 200V 9A D2PAK Original PDF

    IRFW630B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRFW630B / IRFI630B IRFW630B / IRFI630B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRFW630B IRFI630B O-262 I630B IRFI630B IRFI630BTU FP001

    Untitled

    Abstract: No abstract text available
    Text: IRFW630B / IRFI630B IRFW630B / IRFI630B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRFW630B IRFI630B

    Untitled

    Abstract: No abstract text available
    Text: IRFW630B N-Channel MOSFET 200 V, 9 A, 400 mΩ Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state


    Original     		PDF IRFW630B

    IRFI630B

    Abstract: IRFW630B
    Text: IRFW630B / IRFI630B IRFW630B / IRFI630B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRFW630B IRFI630B IRFI630B

    IRFI630B

    Abstract: IRFW630B
    Text: IRFW630B / IRFI630B IRFW630B / IRFI630B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRFW630B IRFI630B IRFI630B

    N-Channel 40V MOSFET

    Abstract: 125 diode IRFW630B N-Channel MOSFET 200v IRFI630B
    Text: IRFW630B / IRFI630B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRFW630B IRFI630B N-Channel 40V MOSFET 125 diode N-Channel MOSFET 200v IRFI630B

    IRFI630B

    Abstract: IRFW630B
    Text: IRFW630B / IRFI630B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRFW630B IRFI630B IRFI630B

    W630B

    Abstract: No abstract text available
    Text: IRFW630B / IRFI630B IRFW630B / IRFI630B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRFW630B IRFI630B O-263 W630B IRFW630BTM FP001 W630B

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original     		PDF

    FLMP SuperSOT-6

    Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
    Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1


    Original     		PDF SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237

    STF12A80

    Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
    Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer


    Original     		PDF 02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B

    FQB27N25

    Abstract: FQB46N15 FDB2532 FQB27P06 FDB6644 FDB6670AL FDB6676 FDB7030L FDB7042L FDB7045L
    Text: Discrete MOSFET TO-263 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-263(D2PAK) N-Channel ISL9N302AS3ST 30 Single 0.0023 0.0033 - - 110 75 345 FDB8030L 30 Single 0.0035


    Original     		PDF O-263 O-263 ISL9N302AS3ST FDB8030L ISL9N303AS3ST FDB7045L ISL9N304AS3ST FDB6676 FDB6670AL 30VDS FQB27N25 FQB46N15 FDB2532 FQB27P06 FDB6644 FDB6670AL FDB6676 FDB7030L FDB7042L FDB7045L

    sss4n60a

    Abstract: IRFS634A IRFS630A SSP4N60A irf640b SSS7N60A IRFU210A SSP7N60A IRF634B IRF840A china
    Text: B-FET Line Card Fairchild Power MOSFETs B-FET Line Card Overview Fairchild has developed a new range of 200V~600V MOSFETs, called B-FETs, using Fairchild’s proprietary, planar, DMOS technology. This advanced technology is especially tailored for minimizing on-state resistance, providing superior switching performance, and withstanding a high


    Original     		PDF IRF830A IRF830B Power247TM, sss4n60a IRFS634A IRFS630A SSP4N60A irf640b SSS7N60A IRFU210A SSP7N60A IRF634B IRF840A china

    SSP6N60A

    Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
    Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


    Original     		PDF SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A

    thermistor KSD201

    Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF TS-16949 ISO-14001, thermistor KSD201 pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd

    FQPf10N60C

    Abstract: FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08
    Text: Discrete BGA BVDSS Min. V Config. 20 RDS(ON) Max (Ω) @ VGS = 10V 4.5V 2.5V 1.8V Qg Typ. (nC) @VGS = 5V Single – 0.027 0.039 – 7 6 1.7 20 Single – 0.018 0.03 – 11 7.5 1.6 FDZ201N 20 Single – 0.018 0.03 – 11 9 2 FDZ209N 60 Single – 0.08@5V


    Original     		PDF FDZ201N FDZ209N FDZ2553N FDZ2553NZ FDZ2551N FDZ7064N SFF9140 FQAF47P06 SSF10N60B SSF7N60B FQPf10N60C FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08

    KTMC5400SM

    Abstract: SL7300 SL7300HX KTMC5850SM MARKING EA MOSFET FQB9P25TM FQB34N20 mosfet 1216 FQB34N20TM IRFW630BTM
    Text: Date Created: 3/16/2004 Date Issued: 3/25/2004 PCN # 20041103 DESIGN/PROCESS CHANGE NOTIFICATION - FINAL This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original     		PDF 168/500/1000hr 168hr 231ea 200/500/1000Cycle FQB34N20TM AM004 FQB9P25TM IRFW630BTM NFP001 KTMC5400SM SL7300 SL7300HX KTMC5850SM MARKING EA MOSFET FQB34N20 mosfet 1216