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Infineon Technologies AG IRFI530NPBF MOSFET N-CH 100V 12A TO220AB FP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFI530NPBF	Tube	6,018		1	1 $2.03 10 $2.03 100 $2.03 1000 $0.64154 10000 $0.559	Buy Now
Avnet Americas	IRFI530NPBF	Tube	2,292	10 Weeks	50	1 - 10 - 100 $0.45097 1000 $0.43979 10000 $0.43979	Buy Now
	IRFI530NPBF	Bulk		16 Weeks, 3 Days	1	1 $1.21 10 $1.01 100 $0.808 1000 $0.701 10000 $0.701	Buy Now
Mouser Electronics	IRFI530NPBF		625			1 $1.88 10 $0.9 100 $0.811 1000 $0.613 10000 $0.559	Buy Now
Newark	IRFI530NPBF	Bulk	3,783		1	1 $0.523 10 $0.523 100 $0.523 1000 $0.523 10000 $0.523	Buy Now
RS	IRFI530NPBF	Bulk			1	1 $0.94 10 $0.89 100 $0.8 1000 $0.8 10000 $0.8	Get Quote

Bristol Electronics	IRFI530NPBF		3,982			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics	IRFI530NPBF		35,370		1	1 $0.6211 10 $0.6211 100 $0.5838 1000 $0.5279 10000 $0.5279	Buy Now
TME	IRFI530NPBF		100		1	1 $1.33 10 $0.88 100 $0.75 1000 $0.62 10000 $0.62	Buy Now
Chip 1 Exchange	IRFI530NPBF		3,048			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip One Stop	IRFI530NPBF	Tube	171			1 - 10 $0.574 100 $0.497 1000 $0.497 10000 $0.497	Buy Now
EBV Elektronik	IRFI530NPBF		26,000	11 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	IRFI530NPBF		20,000		1	1 - 10 - 100 - 1000 - 10000 $0.8823	Buy Now
Vishay Siliconix IRFI530GPBF MOSFET N-CH 100V 9.7A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFI530GPBF	Tube	996		1	1 $2.66 10 $2.66 100 $2.66 1000 $0.87157 10000 $0.775	Buy Now
Vishay Siliconix IRFI530G MOSFET N-CH 100V 9.7A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFI530G	Tube			1,000	1 - 10 - 100 - 1000 $1.8375 10000 $1.8375	Buy Now
Infineon Technologies AG IRFI530N MOSFET N-CH 100V 12A TO220AB FP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFI530N	Tube			350	1 - 10 - 100 - 1000 $5 10000 $5	Buy Now
Vishay Intertechnologies IRFI530GPBF MOSFET N-CHANNEL 100V - Tape and Reel (Alt: IRFI530GPBF)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	IRFI530GPBF	Reel		12 Weeks	1,000	1 - 10 - 100 - 1000 $0.775 10000 $0.7487	Buy Now
Mouser Electronics	IRFI530GPBF		1,073			1 $2.4 10 $1.31 100 $1.16 1000 $0.89 10000 $0.886	Buy Now
TTI	IRFI530GPBF	Tube			1,000	1 - 10 - 100 - 1000 $0.81 10000 $0.78	Buy Now
TME	IRFI530GPBF				1	1 $0.717 10 $0.54 100 $0.488 1000 $0.447 10000 $0.447	Get Quote
EBV Elektronik	IRFI530GPBF		50	13 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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IRFI530 Datasheets (17)

Part	Manufacturer	Description	Datasheet Type	PDF
IRFI530	International Rectifier	FullPak - Fully Isolated HEXFET	Scan	PDF
IRFI530A	Fairchild Semiconductor	Advanced Power MOSFET	Original	PDF
IRFI530A	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRFI530A	Fairchild Semiconductor	Advanced Power MOSFET	Scan	PDF
IRFI530G	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRFI530G	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 9.7A TO220FP	Original	PDF
IRFI530G	International Rectifier	HEXFET Power Mosfet	Scan	PDF
IRFI530G	International Rectifier	HEXFET Power MOSFET	Scan	PDF
IRFI530G	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
IRFI530G	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRFI530GPBF	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 9.7A TO220FP	Original	PDF
IRFI530N	International Rectifier	100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package; A IRFI530N with Standard Packaging	Original	PDF
IRFI530N	International Rectifier	HEXFET Power MOSFET	Original	PDF
IRFI530N	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF

IRFI530N	International Rectifier	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 100V, 11A, Pkg Iso TO-220 Fullpak	Scan	PDF
IRFI530NPBF	International Rectifier		Original	PDF
IRFI530NPBF	International Rectifier	100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package; Similar to IRFI530N with Lead Free Packaging	Original	PDF

IRFI530 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: IRFI530G Power MOSFET TO-220 FULLPAK D FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS t = 60 s; f = 60 Hz • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating • Low Thermal Resistance	Original	IRFI530G O-220	PDF
IRF530N Abstract: No abstract text available Text: PD - 95419 IRFI530NPbF HEXFET Power MOSFET l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.11Ω G Description Fifth Generation HEXFETs from International Rectifier	Original	IRFI530NPbF O-220 IRF530N I840G	PDF
IRF530N Abstract: IRFI530N 4.5v to 100v input regulator Text: PD - 9.1353A IRFI530N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 100V RDS on = 0.11Ω G Description ID = 12A	Original	IRFI530N O-220 IRF530N IRFI530N 4.5v to 100v input regulator	PDF
Untitled Abstract: No abstract text available Text: IRFI530G, SiHFI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating	Original	IRFI530G, SiHFI530G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: IRFI530G, SiHFI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating	Original	IRFI530G, SiHFI530G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
IRFI530GPBF Abstract: 58AB IRFI530G SiHFI530G SiHFI530G-E3 Text: IRFI530G, SiHFI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating	Original	IRFI530G, SiHFI530G O-220 18-Jul-08 IRFI530GPBF 58AB IRFI530G SiHFI530G-E3	PDF
Untitled Abstract: No abstract text available Text: PD - 95419 HEXFET Power MOSFET l l l l l l IRFI530NPbF PRELIMINARY Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.11Ω G Description	Original	IRFI530NPbF O-220 I840G	PDF
IRF530N Abstract: 4.5V to 100V input regulator Text: PD - 95419 IRFI530NPbF HEXFET Power MOSFET l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.11Ω G Description Fifth Generation HEXFETs from International Rectifier	Original	IRFI530NPbF O-220 I840G IRF530N 4.5V to 100V input regulator	PDF
Untitled Abstract: No abstract text available Text: IRFI530G, SiHFI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating	Original	IRFI530G, SiHFI530G O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
IRF530N Abstract: 4.5V to 100V input regulator Text: PD - 95419 IRFI530NPbF HEXFET Power MOSFET l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.11Ω G Description Fifth Generation HEXFETs from International Rectifier	Original	IRFI530NPbF O-220 I840G IRF530N 4.5V to 100V input regulator	PDF
Untitled Abstract: No abstract text available Text: PD - 95419 IRFI530NPbF HEXFET Power MOSFET l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.11Ω G Description ID = 12A	Original	IRFI530NPbF O-220 I840G	PDF
Untitled Abstract: No abstract text available Text: SiHFI530G, IRFI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating	Original	SiHFI530G IRFI530G O-220 18-Jul-08	PDF
Untitled Abstract: No abstract text available Text: SiHFI530G, IRFI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating	Original	SiHFI530G IRFI530G O-220 12-Mar-07	PDF
IRFI530 Abstract: IRF530N IRFI530N b 1370 4.5V TO 100V INPUT REGULATOR Text: PD - 9.1353A IRFI530N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 100V RDS on = 0.11Ω G Description ID = 12A	Original	IRFI530N O-220 IRFI530 IRF530N IRFI530N b 1370 4.5V TO 100V INPUT REGULATOR	PDF

IRF530N Abstract: IRFI530N IRFI840G Text: PD -9.1353 IRFI530N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated VDSS = 100V RDS on = 0.11Ω ID = 11A Description	Original	IRFI530N O-220 IRF530N IRFI530N IRFI840G	PDF
Untitled Abstract: No abstract text available Text: IRFI530G, SiHFI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating	Original	IRFI530G, SiHFI530G O-220 11-Mar-11	PDF
fqp60n06 Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier	Original	STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640	PDF
sumida 94V-0 Abstract: inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET Text: International Rectifier The IGBT SIP & HEXPak Navigator Effective 8 September, EXISTING Products NEW Products UPCOMING Products POTENTIAL Products released to production in last 6-9 months to be released within next 3-4 months no current plans. see bus.mgmt.	Original	IRFK2D054 IRFK2F054 CPV362M4U CPV363M4U CPV364M4U CPV362M4F CPV363M4F CPV364M4F CPV362M4K CPV363M4K sumida 94V-0 inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET	PDF
IRFI530G Abstract: 670 nm Text: International lOR Rectifier PD-9.737 IRFI530G HEXFET Power MOSFET • • • • • • isolated Package High Voitage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm 175°C Operating Temperature Dynamic dv/dt Rating Low Thermal Resistance ^D S S -	OCR Scan	IRFI530G O-220 fTteiT13tÃ 670 nm	PDF
Untitled Abstract: No abstract text available Text: PD - 9.1353A International I R Rectifier IRFI530N PRELIMINARY HEXFEr Power MOSFET • • • • • Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS © Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated V d ss = 1 00 V	OCR Scan	IRFI530N O-220	PDF
pj 69 diode Abstract: IRFI530G 97A IR Text: PD-9.737 International IS Rectifier IRFI530G HEXFET Power MOSFET • • • • • • Isolated Package High Voltage lsoiation= 2.5KVRMS Sink to Lead Creepage Dist - 4.8mm 175°C Operating Temperature Dynamic dv/dt Rating Low Thermal Resistance V DSS= 1 0 0 V	OCR Scan	IRFI530G O-220 pj 69 diode IRFI530G 97A IR	PDF
IRF530N Abstract: IRFI530N IRFI840G JS t 15 IRFI530 ScansUX32 Text: PD -9.1353 IRFI530N P R E LIM IN A R Y HEXFET Power MOSFET • • • • • Advanced Process Technology Isolated Package High Voltage Isolation = 2.5K V R M S <9 Sink to Lead Creepage Dist. = 4.8m m Fully Avalanche Rated V dss - 100V R D S o n = 0 .1 1 £2	OCR Scan	IRFI530N T0-220 IRF530N IRFI840G JS t 15 IRFI530 ScansUX32	PDF
eo102 Abstract: 9245d Text: PD - 9.1353A Interna tional IS R Rectifier IRFI530N PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS D • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated Vdss = 100 V	OCR Scan	IRFI530N eo102 9245d	PDF
Untitled Abstract: No abstract text available Text: International i “r Rectifier • 4455452 ÜÜ1SD,M370 " INR PD'9'737 IRFI530G HEXFET* Power MOSFET • • • • • • INTERNATIONAL RECTIFIER Isolated Package High Voltage lsolation= 2.5KVRM S D Sink to Lead Creepage Dist.= 4.8mm 175°C Operating Temperature	OCR Scan	IRFI530G	PDF

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Infineon Technologies AG IRFI530NPBF

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IRFI530 Datasheets (17)

IRFI530 Datasheets Context Search

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IRF530N

IRF530N

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IRFI530GPBF

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IRF530N

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IRF530N

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IRFI530

IRF530N

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fqp60n06

sumida 94V-0

IRFI530G

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pj 69 diode

IRF530N

eo102

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