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    IRFF210 Search Results

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    IRFF210 Price and Stock

    International Rectifier IRFF210

    Trans MOSFET N-CH 200V 2.25A 3-Pin TO-39
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical IRFF210 95 7
    • 1 -
    • 10 $14.5452
    • 100 $14.5452
    • 1000 $14.5452
    • 10000 $14.5452
    		Buy Now
    Arrow Electronics IRFF210 95 22 Weeks 7
    • 1 -
    • 10 $13.3756
    • 100 $12.1199
    • 1000 $11.9059
    • 10000 $11.9059
    		Buy Now

    Infineon Technologies AG IRFF210

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Future Electronics IRFF210 100
    • 1 -
    • 10 -
    • 100 $13.2
    • 1000 $13.2
    • 10000 $13.2
    		Buy Now

    New Jersey Semiconductor Products, Inc. IRFF210

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IRFF210 9,671 1
    • 1 $19.2
    • 10 $19.2
    • 100 $16.9843
    • 1000 $15.744
    • 10000 $15.744
    		Buy Now

    New Jersey Semiconductor Products Inc IRFF210

    MOSFET Transistor, N-Channel, TO-205AF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRFF210 7,736
    • 1 $20.8
    • 10 $20.8
    • 100 $20.8
    • 1000 $16
    • 10000 $16
    		Buy Now

    IRFF210 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFF210 International Rectifier HEXFET Transistor Original PDF
    IRFF210 Intersil 2.2A, 200V, 1.500 ?, N-Channel Power MOSFET Original PDF
    IRFF210 Semelab N-Channel MOSFET in a Hermetically Sealed TO39 Metal Package Original PDF
    IRFF210 General Electric Power Transistor Data Book 1985 Scan PDF
    IRFF210 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFF210 International Rectifier TO-39 Package N-Channel HEXFET Scan PDF
    IRFF210 International Rectifier TO-39 N-Channel HEXFET Power MOSFETs Scan PDF
    IRFF210 International Rectifier N-CHannel Power MOSFET in a TO-39 Package, 200 Volt, 1.5 Ohm Scan PDF
    IRFF210 Motorola European Master Selection Guide 1986 Scan PDF
    IRFF210 Motorola N-Channel, Enhancement TMOS FET Transistors Scan PDF
    IRFF210 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFF210 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFF210 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFF210 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRFF210 Unknown FET Data Book Scan PDF
    IRFF210 Siliconix N-Channel Enhancement Mode Transistor Scan PDF
    IRFF210 Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF
    IRFF210R Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFF210R International Rectifier Rugged Series Power MOSFETs - N-Channel Scan PDF
    IRFF210R Unknown Shortform Datasheet & Cross References Data Short Form PDF

    IRFF210 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFF210

    Abstract: No abstract text available
    Text: IRFF210 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.


    Original     		PDF IRFF210 O205AF) 11-Oct-02 IRFF210

    Untitled

    Abstract: No abstract text available
    Text: IRFF210, IRFF211, IRFF212, IRFF213 S E M I C O N D U C T O R 1.8A, and 2.2A, 150V and 200V, 1.5 and 2.4 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1.8A and 2.2A, 150V to 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRFF210, IRFF211, IRFF212, IRFF213 TA17442. IRFF213

    2n6784

    Abstract: No abstract text available
    Text: 2N6784 IRFF210 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET ENHANCEMENT MODE 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 0.89 max. (0.035) 12.70 (0.500) min. FEATURES 0.41 (0.016) 0.53 (0.021) dia. • REPETITIVE AVALANCHE RATING


    Original     		PDF 2N6784 IRFF210 O-205AF)

    IRFF210

    Abstract: TB334
    Text: IRFF210 Data Sheet January 2002 2.2A, 200V, 1.500 Ohm, N-Channel Power MOSFET Features • 2.2A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFF210 TA17442. IRFF210 TB334

    IRF 725

    Abstract: IRFF210 JANTX2N6784 JANTXV2N6784
    Text: PD - 90424C IRFF210 JANTX2N6784 JANTXV2N6784 REF:MIL-PRF-19500/556 200V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF210 BVDSS 200V RDS(on) 1.5Ω ID 2.25A  The HEXFET technology is the key to International


    Original     		PDF 90424C IRFF210 JANTX2N6784 JANTXV2N6784 MIL-PRF-19500/556 O-205AF) IRF 725 IRFF210 JANTX2N6784 JANTXV2N6784

    Untitled

    Abstract: No abstract text available
    Text: PD - 90424C IRFF210 JANTX2N6784 JANTXV2N6784 REF:MIL-PRF-19500/556 200V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF210 BVDSS 200V RDS(on) 1.5Ω ID 2.25A  The HEXFET technology is the key to International


    Original     		PDF 90424C IRFF210 JANTX2N6784 JANTXV2N6784 MIL-PRF-19500/556 O-205AF) electrical252-7105

    IRFF210

    Abstract: TB334
    Text: IRFF210 Data Sheet March 1999 2.2A, 200V, 1.500 Ohm, N-Channel Power MOSFET • 2.2A, 200V Formerly developmental type TA17442. Ordering Information PACKAGE 1887.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,


    Original     		PDF IRFF210 TA17442. IRFF210 TB334

    Untitled

    Abstract: No abstract text available
    Text: IRFF210 Data Sheet Title FF 0 bt 2A, 0V, 00 m, March 1999 2.2A, 200V, 1.500 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFF210 IRFF210 O-205AF TB334

    IRF460

    Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
    Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,


    Original     		PDF 30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065

    CMF65-5.556K

    Abstract: No abstract text available
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 27 March 2011. MIL-PRF-19500/556K 27 December 2010 SUPERSEDING MIL-PRF-19500/556J 16 June 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON,


    Original     		PDF MIL-PRF-19500/556K MIL-PRF-19500/556J 2N6782, 2N6782U, 2N6784, 2N6784U, 2N6786, 2N6786U, MIL-PRF-19500. CMF65-5.556K

    25CC

    Abstract: IRFF210 IRFF213
    Text: MOTOROLA SC XSTRS/R F la g D | b3b?aS4 OQflt.703 T | T -S f-Ö ? IRFF210 IRFF213 M AXIM UM RATIN GS Symbol IRFF210 IRFF213 Unit Drain-Source Voltage Vd s s 200 150 Vdc Drain-Gate Voltage R q s = 1.0 m il Vd g r 200 150 Vdc Rating Gate-Source Voltage + 20


    OCR Scan     		PDF IRFF210 IRFF213 IRFF213 O-205AF) 25CC

    IRFF210

    Abstract: IRFF211
    Text: IMEF RELD EFFECT POWER TRANSISTOR IRFF210,211 2.2 AM PERES 200,150 VOLTS RD S O N = 1.5 n Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


    OCR Scan     		PDF IRFF210 33K/W RFF211â IRFF211

    IRFF210

    Abstract: IRFF211 IRFF212 IRFF213
    Text: Standard Power MOSFETs- IRFF210, IRFF211, IRFF212, IRFF213 File N um b er N-Channel Enhancement-Mode Power Field-Effect Transistors 1.8A and 2.2A, 150V - 200V rosioni = 1.50 and 2.40 N-C H A N N EL EN HANCEM ENT MODE Features: •


    OCR Scan     		PDF IRFF210, IRFF211, IRFF212, IRFF213 -3374I IRFF212and IRFF213 IRFF210 IRFF211 IRFF212

    TA17442

    Abstract: TA-1744
    Text: IRFF210, IRFF211, IRFF212, IRFF213 HARRIS S E M I C O N D U C T O R A.BA, January 1998 and 2.2A, 150V and 200V, 1.5 and 2.4 Ohm, N-Channel Power MOSFETs Features Description • 1 .8A and 2.2A, 150V to 200V These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRFF210, IRFF211, IRFF212, IRFF213 TB334 RFF210, RFF211, RFF212, IRFF213 TA17442 TA-1744

    diode deg avalanche zo 150 20

    Abstract: IRFF210R IRFF211R IRFF212R IRFF213R
    Text: Rugged Power MOSFETs_ IRFF210R, IRFF211R, IRFF212R, IRFF213R File Num ber 2025 Avalanche Energy Rated N-Channel Power MOSFETs 1.8A and 2.2A, 150V-200V N-CHANNEL ENHANCEMENT MODE rDs on = 1.5Q and 2.40 D Features: • Single pulse avalanche energy rated


    OCR Scan     		PDF IRFF210R, IRFF211R, IRFF212R, IRFF213R 50V-200V 92CS-Â IRFF212R IRFF213R diode deg avalanche zo 150 20 IRFF210R IRFF211R

    Untitled

    Abstract: No abstract text available
    Text: w vys S IRFF210, IRFF211, IRFF212, IRFF213 S e m ico n d ucto r y 7 1.8A, and 2.2A, 150V and 200V, 1.5 and 2.4 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1.8A and 2.2A, 150V to 200V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRFF210, IRFF211, IRFF212, IRFF213

    h20 mosfet

    Abstract: No abstract text available
    Text: HARRI S SENI COND SECTOR bôE D • 4302271 0DS111E HAFRFRIS 4TT ■ HAS PCF210W F2 1OD S E M I C O N D U C T O R N-Channel MOS Chip January 1993 Features Die • Passivated • Contact Metallization - Gate and Source - Aluminum - Drain - Tri-Metal AI-TI-NI


    OCR Scan     		PDF 0DS111E PCF210W Mil-Std-750, IRF610 IRFD210 IRFF210 2N6784 PCF210D 1-800-4-HARRIS h20 mosfet

    2N6788 motorola

    Abstract: vmos vmos fet MFE910 n-channel vmos motorola MFE930 2N6659 2N6661 IRFF110 IRFF111
    Text: FIELD-EFFECT TRANSISTORS continued Small-Signal TMOS TMOS Power MOSFETs Pow er M O SFETS, M o to ro la tra d e m a rk T M O S , a re FET transistors with an oxide insulated gate which controls vertical c u rren t flow. This basic description fits a n um ber of structures and process titles


    OCR Scan     		PDF IRFF431 IRFF432 IRFF433 2N6782 2N6784 2N6786 2N6788 2N6790 2N6792 2N6794 2N6788 motorola vmos vmos fet MFE910 n-channel vmos motorola MFE930 2N6659 2N6661 IRFF110 IRFF111

    IRF09120

    Abstract: 251G FF323 IRFF310 F9122 IRFF130 IRF0120
    Text: - f M % tt ± $ H V ds or € Vg s T a = 2 5 l3 Id Po a Vgs th ) I dss I gs s m tf ï & ï Ds(on) Vd s = ’l ï (V) * /CH * /CH (A) (W) (nA) Vgs (V) C m A) V ds (V) m in max (V) (V) I d (on) C is s g fs Coss C rss $1- B m % V g s =0 (max) Id (mA) ♦ typ


    OCR Scan     		PDF IRFF310 O-205AF FF312 FF322 FF323 25RFF230 IRFF231 IRF09120 251G FF323 IRFF310 F9122 IRFF130 IRF0120

    Untitled

    Abstract: No abstract text available
    Text: IOR IRFF Series Devices IRFF Series Data Sheet T h e IR F F D a ta S h e e t d escrib es 19 d evices, 12 N -C h a n n e l and 7 P -C h a n n e l, all con tain ed in the T O -2 0 5 A F T O -3 9 p ac k a g e . T his d a ta s h e e t is a rra n g e d to show com m on tab u la r and g raphical


    OCR Scan     		PDF

    MMBF112L

    Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
    Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty


    OCR Scan     		PDF 06050L MMBD914L BAS16L BAL99L MBAV70L MBAV99L MBAV74 BD2835XL MBD2836XL MMBD2837XL MMBF112L MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211

    F111

    Abstract: IRFD9123 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120
    Text: - 258 - f t M t± £ € A£ ft Vd s or i Vd g % V Vg s ( V) & ( T a = 2 5 cC ) Id 1! Idss Igss Pd * /C H * /CH (A ) (W) ( n A) Vg s ( V) ( M A) Vg s Vd s (V ) th ) % Vd s = Vg s min max ( V) ( V) Id ( itA) fa ft Fo s(o n ) (Ta=25^0) I d ( on) g fs C iss


    OCR Scan     		PDF 1RFD9120 IRFD9123 IRF09210 O-205AF IRFF222 1RFF223 T0-205AF 1RFF230 F111 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan     		PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF