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    IRF749 Price and Stock

    Infineon Technologies AG IRF7490TRPBF

    MOSFET N-CH 100V 5.4A 8SO
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    DigiKey IRF7490TRPBF Cut Tape 21,371 1
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    Mouser Electronics IRF7490TRPBF 4,313
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    Infineon Technologies AG IRF7495TRPBF

    MOSFET N-CH 100V 7.3A 8SO
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    DigiKey IRF7495TRPBF Digi-Reel 10,594 1
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    Mouser Electronics IRF7495TRPBF 20,525
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    Infineon Technologies AG IRF7493TRPBF

    MOSFET N-CH 80V 9.3A 8SO
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    DigiKey IRF7493TRPBF Digi-Reel 2,956 1
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    Infineon Technologies AG IRF7492TR

    MOSFET N-CH 200V 3.7A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF7492TR Reel 4,000
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    Infineon Technologies AG IRF7493TR

    MOSFET N-CH 80V 9.3A 8SO
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    DigiKey IRF7493TR Reel 4,000
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    Find more IRF749 price and stock on Findchips.com

    IRF749 Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF7490 International Rectifier HEXFET Power Mosfet Original PDF
    IRF7490PBF International Rectifier Original PDF
    IRF7490TR International Rectifier 100V Single N-Channel HEXFET Power MOSFET in a SO-8 package Original PDF
    IRF7490TRPBF International Rectifier Original PDF
    IRF7491 International Rectifier 80V Single N-Channel HEXFET Power MOSFET in a SO-8 package Original PDF
    IRF7491PBF International Rectifier Original PDF
    IRF7491TR International Rectifier 80V Single N-Channel HEXFET Power MOSFET in a SO-8 package Original PDF
    IRF7491TRPBF International Rectifier Original PDF
    IRF7492 International Rectifier HEXFET Power MOSFET Original PDF
    IRF7492PBF International Rectifier Original PDF
    IRF7492TR International Rectifier 200V Single N-Channel HEXFET Power MOSFET in a SO-8 package Original PDF
    IRF7492TRPBF International Rectifier Original PDF
    IRF7493 International Rectifier HEXFET Power MOSFET Original PDF
    IRF7493PBF International Rectifier Original PDF
    IRF7493TR International Rectifier Original PDF
    IRF7493TRPBF International Rectifier Original PDF
    IRF7494 International Rectifier HEXFET Power MOSFET Original PDF
    IRF7494PBF International Rectifier Original PDF
    IRF7494TR International Rectifier Original PDF
    IRF7494TRPBF International Rectifier Original PDF

    IRF749 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ISD 1820 P

    Abstract: IRF7492 AN1001 IC 22A Regulator
    Text: PD - 94498 IRF7492 HEXFET Power MOSFET VDSS Applications l High frequency DC-DC converters Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001


    Original     		IRF7492 AN1001) ISD 1820 P IRF7492 AN1001 IC 22A Regulator PDF

    MS-012AA

    Abstract: AN1001 EIA-541 F7101 IRF7101 IRF7491 IRF74
    Text: PD - 94537 IRF7491 HEXFET Power MOSFET Applications High frequency DC-DC converters VDSS RDS on max ID 80V 16mΩ@VGS = 10V 9.7A Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See


    Original     		IRF7491 AN1001) MS-012AA AN1001 EIA-541 F7101 IRF7101 IRF7491 IRF74 PDF

    AN1001

    Abstract: EIA-541 F7101 IRF7101
    Text: PD - 95285 IRF7491PbF HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VDSS RDS on max 16m:@VGS = 10V 80V Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See


    Original     		IRF7491PbF AN1001) AN1001 EIA-541 F7101 IRF7101 PDF

    AN1001

    Abstract: No abstract text available
    Text: PD - 95349B IRF7494PbF HEXFET Power MOSFET Applications l High frequency DC-DC converters l Lead-Free VDSS RDS on max 44m:@VGS = 10V 150V Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See


    Original     		95349B IRF7494PbF AN1001) AN1001 PDF

    ic MARKING QG

    Abstract: AN1001 EIA-541 F7101 IRF7101 95288 irf7495pbf MJ 73
    Text: PD - 95288 IRF7495PbF HEXFET Power MOSFET Applications l High frequency DC-DC converters l Lead-Free VDSS RDS on max ID 100V 22m @VGS = 10V 7.3A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See


    Original     		IRF7495PbF AN1001) ic MARKING QG AN1001 EIA-541 F7101 IRF7101 95288 irf7495pbf MJ 73 PDF

    IRF AN1001

    Abstract: irf 44 n IRF7494 MOSFET 150 N IRF AN1001 IRF 870
    Text: PD - 94641B IRF7494 HEXFET Power MOSFET Applications l High frequency DC-DC converters VDSS RDS on max 44m:@VGS = 10V 150V Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See


    Original     		94641B IRF7494 AN1001) IRF AN1001 irf 44 n IRF7494 MOSFET 150 N IRF AN1001 IRF 870 PDF

    AN1001

    Abstract: EIA-541 F7101 IRF7101
    Text: PD - 95287 IRF7492PbF HEXFET Power MOSFET VDSS Applications l High frequency DC-DC converters l Lead-Free Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001


    Original     		IRF7492PbF AN1001) AN1001 EIA-541 F7101 IRF7101 PDF

    AN1001

    Abstract: F7101 IRF7101 IRF7493
    Text: PD - 94654B IRF7493 HEXFET Power MOSFET Applications High frequency DC-DC converters l Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001 l Fully Characterized Avalanche Voltage


    Original     		94654B IRF7493 AN1001) EIA-541. AN1001 F7101 IRF7101 IRF7493 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95289 IRF7493PbF HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001


    Original     		IRF7493PbF AN1001) PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF7493PbF-1 HEXFET Power MOSFET VDS 80 RDS on max V 15 (@VGS = 10V) Qg (typical) ID (@TA = 25°C) mΩ 35 nC 9.3 A A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques


    Original     		IRF7493PbF-1 IRF7493TRPbF-1 D-020D PDF

    ISD 1820 P

    Abstract: AN1001 EIA-541 F7101 IRF7101
    Text: PD - 95287A IRF7492PbF HEXFET Power MOSFET VDSS Applications l High frequency DC-DC converters l Lead-Free Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See


    Original     		5287A IRF7492PbF AN1001) ISD 1820 P AN1001 EIA-541 F7101 IRF7101 PDF

    AN1001

    Abstract: IRF7495 MARKING 44a
    Text: PD - 94683C IRF7495 HEXFET Power MOSFET Applications l High frequency DC-DC converters VDSS RDS on max ID 100V 22m @VGS = 10V 7.3A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See


    Original     		94683C IRF7495 AN1001) AN1001 IRF7495 MARKING 44a PDF

    AN1001

    Abstract: IRF7494
    Text: FOR REVIEW ONLY PD PD- -94641 TBD IRF7494 HEXFET Power MOSFET VDSS Applications High frequency DC-DC converters l RDS on max 44m:@VGS = 10V 150V Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See


    Original     		IRF7494 AN1001) AN1001 IRF7494 PDF

    irf7494trpbf

    Abstract: 51A SO8
    Text: PD - 95349C IRF7494PbF HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VDSS RDS on max ID 150V 44mΩ@VGS = 10V 5.1A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including


    Original     		95349C IRF7494PbF AN1001) IRF7494 IRF7494 IRF7494PBF IRF7494TR IRF7494TRPBF 15-Nov-2010 51A SO8 PDF

    AN1001

    Abstract: EIA-541 F7101 IRF7101 MS-012AA
    Text: PD - 95349 IRF7494PbF HEXFET Power MOSFET Applications l High frequency DC-DC converters l Lead-Free VDSS RDS on max 44m:@VGS = 10V 150V Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See


    Original     		IRF7494PbF AN1001) AN1001 EIA-541 F7101 IRF7101 MS-012AA PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95284 IRF7490PbF HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001


    Original     		IRF7490PbF AN1001) PDF

    AN1001

    Abstract: EIA-541 F7101 3.7v transformer irf f7101
    Text: PD - 95284 IRF7490PbF HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001


    Original     		IRF7490PbF AN1001) IA-541. AN1001 EIA-541 F7101 3.7v transformer irf f7101 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94683A IRF7495 HEXFET Power MOSFET Applications l High frequency DC-DC converters VDSS RDS on max ID 100V 22m @VGS = 10V 7.3A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See


    Original     		4683A IRF7495 AN1001) PDF

    AN1001

    Abstract: EIA-541 F7101 IRF7101
    Text: PD - 95289 IRF7493PbF HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001


    Original     		IRF7493PbF AN1001) EIA-481 EIA-541. AN1001 EIA-541 F7101 IRF7101 PDF

    IRF7494

    Abstract: IRF AN1001 AN1001 EIA-541 F7101 IRF7101 MS-012AA
    Text: PD - 94641A IRF7494 HEXFET Power MOSFET Applications l High frequency DC-DC converters VDSS RDS on max 44m:@VGS = 10V 150V Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See


    Original     		4641A IRF7494 AN1001) IRF7494 IRF AN1001 AN1001 EIA-541 F7101 IRF7101 MS-012AA PDF

    IRF7495

    Abstract: No abstract text available
    Text: PD - 95288 IRF7495PbF HEXFET Power MOSFET Applications l High frequency DC-DC converters l Lead-Free VDSS RDS on max ID 100V 22m @VGS = 10V 7.3A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See


    Original     		IRF7495PbF AN1001) IRF7495PBF IRF7495TRPBF IRF7495 IRF7495TR IRF7495 15-Nov-2010 PDF

    AN1001

    Abstract: EIA-541 F7101 IRF7101 IRF7493
    Text: PD - 94654 IRF7493 PROVISIONAL HEXFET Power MOSFET VDSS Applications High frequency DC-DC converters l RDS on max 15m:@VGS = 10V 80V Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See


    Original     		IRF7493 AN1001) AN1001 EIA-541 F7101 IRF7101 IRF7493 PDF

    IRF7495

    Abstract: AN1001 F7101 IRF7101 IRF74
    Text: PD - 94683B IRF7495 HEXFET Power MOSFET Applications l High frequency DC-DC converters VDSS RDS on max ID 100V 22m @VGS = 10V 7.3A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See


    Original     		94683B IRF7495 AN1001) IRF7495 AN1001 F7101 IRF7101 IRF74 PDF

    ISD 1720

    Abstract: AN1001 F7101 IRF7101 IRF7490 3.7v transformer
    Text: PD - 94508 IRF7490 HEXFET Power MOSFET Applications High frequency DC-DC converters l Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001 l Fully Characterized Avalanche Voltage


    Original     		IRF7490 AN1001) EIA-541. ISD 1720 AN1001 F7101 IRF7101 IRF7490 3.7v transformer PDF