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    Infineon Technologies AG IRF7490TRPBF

    MOSFET N-CH 100V 5.4A 8SO
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    DigiKey IRF7490TRPBF Reel 19,700 4,000
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    Avnet Americas IRF7490TRPBF Reel 10 Weeks 4,000
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    Mouser Electronics IRF7490TRPBF 3,975
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    Newark IRF7490TRPBF Cut Tape 71 5
    • 1 $1.58
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    Rochester Electronics IRF7490TRPBF 5,260 1
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    Chip One Stop IRF7490TRPBF Cut Tape 15,700 0 Weeks, 1 Days 5
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    EBV Elektronik IRF7490TRPBF 11 Weeks 4,000
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    Win Source Electronics IRF7490TRPBF 32,660
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    Vishay Siliconix IRF740STRLPBF

    MOSFET N-CH 400V 10A D2PAK
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    DigiKey IRF740STRLPBF Reel 8,000 800
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    New Advantage Corporation IRF740STRLPBF 4,800 1
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    Infineon Technologies AG IRF7493TRPBF

    MOSFET N-CH 80V 9.3A 8SO
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    DigiKey IRF7493TRPBF Digi-Reel 6,910 1
    • 1 $0.77
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    IRF7493TRPBF Cut Tape 6,910 1
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    IRF7493TRPBF Reel 4,000 4,000
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    Mouser Electronics IRF7493TRPBF 6,072
    • 1 $0.68
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    Rochester Electronics IRF7493TRPBF 312,000 1
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    Chip One Stop IRF7493TRPBF Cut Tape 3,984 0 Weeks, 1 Days 5
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    EBV Elektronik IRF7493TRPBF 12,000 13 Weeks 4,000
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    New Advantage Corporation IRF7493TRPBF 8,000 1
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    Infineon Technologies AG IRF7480MTRPBF

    MOSFET N-CH 40V 217A DIRECTFET
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    DigiKey IRF7480MTRPBF Cut Tape 6,891 1
    • 1 $1.74
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    IRF7480MTRPBF Digi-Reel 6,891 1
    • 1 $1.74
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    IRF7480MTRPBF Reel 4,800 4,800
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    Avnet Americas IRF7480MTRPBF Reel 4,800 16 Weeks 4,800
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    Mouser Electronics IRF7480MTRPBF 16,483
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    RS IRF7480MTRPBF Bulk 5
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    Rochester Electronics IRF7480MTRPBF 123,179 1
    • 1 $1.16
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    Chip One Stop IRF7480MTRPBF Cut Tape 4,770 0 Weeks, 1 Days 1
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    Infineon Technologies AG IRF7413ZTRPBFXTMA1

    TRENCH <= 40V
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    DigiKey IRF7413ZTRPBFXTMA1 Cut Tape 3,588 1
    • 1 $0.9
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    IRF7413ZTRPBFXTMA1 Digi-Reel 3,588 1
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    Avnet Americas IRF7413ZTRPBFXTMA1 Reel 12 Weeks 4,000
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    Newark IRF7413ZTRPBFXTMA1 Cut Tape 4,076 1
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    Chip One Stop IRF7413ZTRPBFXTMA1 Cut Tape 4,000 0 Weeks, 1 Days 5
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    IRF74 Datasheets (486)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    IRF740 Harris Semiconductor Power MOSFET Selection Guide Original PDF
    IRF740 International Rectifier 400V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Original PDF
    IRF740 Intersil 10A, 400V, 0.550 ?, N-Channel Power MOSFET Original PDF
    IRF740 STMicroelectronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 400V 10A TO-220 Original PDF
    IRF740 STMicroelectronics TRANS MOSFET N-CH 400V 10A 3TO-220 Original PDF
    IRF740 STMicroelectronics N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS Original PDF
    IRF740 STMicroelectronics N - CHANNEL 400V - 0.48 ? - 10 A - TO-220 PowerMESH MOSFET Original PDF
    IRF740 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF740 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 400V 10A TO-220AB Original PDF
    IRF740 Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRF740 Fairchild Semiconductor N-Channel Power MOSFETs, 10A, 350V/400V Scan PDF
    IRF740 FCI POWER MOSFETs Scan PDF
    IRF740 Frederick Components Power MOSFET Selection Guide Scan PDF
    IRF740 General Electric Power Transistor Data Book 1985 Scan PDF
    IRF740 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF740 International Rectifier TO-220 HEXFET Power MOSFET Scan PDF
    IRF740 International Rectifier N-Channel Power MOSFETs Scan PDF
    IRF740 International Rectifier HEXFET Power MOSFET Scan PDF
    IRF740 International Rectifier HEXFET Power MOSFET Scan PDF
    IRF740 International Rectifier HEXFET Power Mosfet Scan PDF
    ...

    IRF74 Datasheets Context Search

    Catalog Datasheet
    Type
    Document Tags
    PDF

    irf740lc

    Abstract: No abstract text available
    Text: IRF740LC, SiHF740LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.55 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single RoHS* COMPLIANT This new series of low charge Power MOSFETs achieve


    Original     		IRF740LC, SiHF740LC 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 irf740lc PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF740A, SiHF740A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage


    Original     		IRF740A, SiHF740A 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF740A, SiHF740A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage


    Original     		IRF740A, SiHF740A 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    IRF7410g

    Abstract: L 117 309 01000
    Text: PD - 96247 IRF7410GPbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free Halogen-Free VDSS RDS on max ID -12V 7mΩ@VGS = -4.5V -16A 9mΩ@VGS = -2.5V 13mΩ@VGS = -1.8V -13.6A -11.5A


    Original     		IRF7410GPbF EIA-481 EIA-541. IRF7410g L 117 309 01000 PDF

    ISD 1820 P

    Abstract: IRF7492 AN1001 IC 22A Regulator
    Text: PD - 94498 IRF7492 HEXFET Power MOSFET VDSS Applications l High frequency DC-DC converters Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001


    Original     		IRF7492 AN1001) ISD 1820 P IRF7492 AN1001 IC 22A Regulator PDF

    IRF7459

    Abstract: IRF74 4.5V TO 100V INPUT REGULATOR
    Text: PD- 93885B IRF7459 SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use l VDSS RDS on max 20V 9.0mΩ l l 12A High Frequency Buck Converters for Computer Processor Power


    Original     		93885B IRF7459 IA-48 IRF7459 IRF74 4.5V TO 100V INPUT REGULATOR PDF

    IRF7476

    Abstract: TH 2190 mosfet F7101 IRF7101 MS-012AA
    Text: PD - 94311 IRF7476 HEXFET Power MOSFET Applications l High Frequency 3.3V and 5V input Pointof-Load Synchronous Buck Converters for Netcom and Computing Applications. l Power Management for Netcom, Computing and Portable Applications. Benefits l Ultra-Low Gate Impedance


    Original     		IRF7476 EIA-481 IA-541. IRF7476 TH 2190 mosfet F7101 IRF7101 MS-012AA PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95204 IRF740SPbF • Lead-Free 4/29/04 Document Number: 91055 www.vishay.com 1 IRF740SPbF Document Number: 91055 www.vishay.com 2 IRF740SPbF Document Number: 91055 www.vishay.com 3 IRF740SPbF Document Number: 91055 www.vishay.com 4 IRF740SPbF Document Number: 91055


    Original     		IRF740SPbF 08-Mar-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF740LC, SiHF740LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.55 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single RoHS* COMPLIANT This new series of low charge Power MOSFETs achieve


    Original     		IRF740LC, SiHF740LC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    AN609

    Abstract: IRF740A SiHF740A
    Text: IRF740A_RC, SiHF740A_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		IRF740A SiHF740A AN609, 11-Mar-10 AN609 PDF

    53216

    Abstract: AN609 IRF740AL IRF740AS SiHF740AL SiHF740AS
    Text: IRF740AS_RC, IRF740AL_RC, SiHF740AS_RC, SiHF740AL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		IRF740AS IRF740AL SiHF740AS SiHF740AL AN609, 11-Mar-10 53216 AN609 PDF

    IRF7471

    Abstract: No abstract text available
    Text: PD- 94036B IRF7471 SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power Benefits l Ultra-Low Gate Impedance


    Original     		94036B IRF7471 IA-48 IRF7471 PDF

    AN1001

    Abstract: IRF7464
    Text: PD- 93895 IRF7464 SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001


    Original     		IRF7464 AN1001) AN1001 IRF7464 PDF

    IRF740

    Abstract: IRF740FI transistor equivalent irf740 irf740 DATA SHEET
    Text: IRF740 IRF740FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF740 IRF740FI • ■ ■ ■ V DSS R DS on ID 400 V 400 V < 0.55 Ω < 0.55 Ω 10 A 5.5 A TYPICAL RDS(on) = 0.42 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		IRF740 IRF740FI 100oC O-220 ISOWATT220 IRF740 IRF740FI transistor equivalent irf740 irf740 DATA SHEET PDF

    IRF7455

    Abstract: 24V 10A SMPS ic
    Text: PD- 93842B IRF7455 SMPS MOSFET HEXFET Power MOSFET Applications High Frequency DC-DC Converters with Synchronous Rectification l Benefits Ultra-Low RDS on at 4.5V VGS l Low Charge and Low Gate Impedance to Reduce Switching Losses l Fully Characterized Avalanche Voltage


    Original     		93842B IRF7455 Curr252-7105 IRF7455 24V 10A SMPS ic PDF

    MS-012AA

    Abstract: AN1001 EIA-541 F7101 IRF7101 IRF7491 IRF74
    Text: PD - 94537 IRF7491 HEXFET Power MOSFET Applications High frequency DC-DC converters VDSS RDS on max ID 80V 16mΩ@VGS = 10V 9.7A Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See


    Original     		IRF7491 AN1001) MS-012AA AN1001 EIA-541 F7101 IRF7101 IRF7491 IRF74 PDF

    24v 5a smps

    Abstract: AN1001 EIA-541 IRF7452 MS-012AA IRF74
    Text: PD- 93897C IRF7452 SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001


    Original     		93897C IRF7452 AN1001) Gate-to-Sour52-7105 24v 5a smps AN1001 EIA-541 IRF7452 MS-012AA IRF74 PDF

    AN1001

    Abstract: IRF7450
    Text: PD- 93893A IRF7450 SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters VDSS l Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design See App. Note AN1001


    Original     		3893A IRF7450 AN1001) IA-48 AN1001 IRF7450 PDF

    AN1001

    Abstract: IRF7453 IRF74
    Text: PD- 93899A IRF7453 SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters VDSS l Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design See App. Note AN1001


    Original     		3899A IRF7453 AN1001) IA-48 AN1001 IRF7453 IRF74 PDF

    IRF7466

    Abstract: No abstract text available
    Text: PD- 93884C IRF7466 SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l l l Ultra-Low Gate Impedance


    Original     		93884C IRF7466 IA-48 IRF7466 PDF

    SEC IRF740

    Abstract: No abstract text available
    Text: $GYDQFHG 3RZHU 026 7 IRF740 FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.55Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 10 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V


    Original     		IRF740 O-220 SEC IRF740 PDF

    Untitled

    Abstract: No abstract text available
    Text: $GYDQFHG 3RZHU 026 7 IRF740A FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.55Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 10 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V


    Original     		IRF740A O-220 O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF740 A d van ced Power MOSFET FEATURES B V DSS - 400 V ^D S o n = 0 .5 5 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 10 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-220 ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V


    OCR Scan     		IRF740 O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF7425PbF-1 HEXFET Power MOSFET VDS -20 RDS on max V 1 8 S 2 7 D S 3 6 D G 4 5 D 8.2 (@VGS = -4.5V) mΩ RDS(on) max 13 (@VGS = -2.5V) Qg (typical) ID (@TA = 25°C) 87 nC -15 A Package Type IRF7425PbF-1 SO-8 SO-8 Top View Features Industry-standard pinout SO-8 Package


    Original     		IRF7425PbF-1 IRF7425Pefer D-020D PDF