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    AN1001

    Abstract: IRF7495 MARKING 44a
    Text: PD - 94683C IRF7495 HEXFET Power MOSFET Applications l High frequency DC-DC converters VDSS RDS on max ID 100V 22m @VGS = 10V 7.3A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See


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    PDF 94683C IRF7495 AN1001) AN1001 IRF7495 MARKING 44a

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    Abstract: No abstract text available
    Text: PD - 94683C IRF7495 HEXFET Power MOSFET Applications l High frequency DC-DC converters VDSS RDS on max ID 100V 22m @VGS = 10V 7.3A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See


    Original
    PDF 94683C IRF7495 AN1001)