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    IRF640 APPLICATION NOTE Search Results

    IRF640 APPLICATION NOTE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CA3079 Rochester Electronics LLC CA3079 - Zero-Voltage Switches for 50-60Hz and 400Hz Thyristor Control Applications Visit Rochester Electronics LLC Buy
    CA3059 Rochester Electronics LLC CA3059 - Zero-Voltage Switches for 50-60Hz and 400Hz Thyristor Control Applications Visit Rochester Electronics LLC Buy
    CA3059-G Rochester Electronics LLC CA3059 - Zero-Voltage Switches for 50-60Hz and 400Hz Thyristor Control Applications Visit Rochester Electronics LLC Buy
    TCM3105NL Rochester Electronics LLC TCM3105NL - FSK Modem, PDIP16 Visit Rochester Electronics LLC Buy
    AM79865JC Rochester Electronics LLC AM79865 -Physical Data Transmitter Visit Rochester Electronics LLC Buy

    IRF640 APPLICATION NOTE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors N-channel TrenchMOS transistor SYMBOL FEATURES • • • • IRF640, IRF640S QUICK REFERENCE DATA ’Trench’ technology Low on-state resistance Fast switching Low thermal resistance V dss —200 V lD = 16 A


    OCR Scan     		IRF640, IRF640S IRF640 T0220AB) IRF640S OT404 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 70 • Fast Switching Qgs (nC) 13 • Ease of Paralleling 39 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		IRF640, SiHF640 2002/95/EC O-220AB 11-Mar-11 PDF

    linear applications of power MOSFET IRF640

    Abstract: power MOSFET IRF640 IRF640 applications note for irf640 irf640 IRF640 application note IRF640 field-effect power transistor RF1S640SM9A RF1S640 RF1S640SM
    Text: IRF640, RF1S640, RF1S640SM Data Sheet January 2002 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    Original     		IRF640, RF1S640, RF1S640SM TA17422. linear applications of power MOSFET IRF640 power MOSFET IRF640 IRF640 applications note for irf640 irf640 IRF640 application note IRF640 field-effect power transistor RF1S640SM9A RF1S640 RF1S640SM PDF

    IRF640PBF

    Abstract: IRF640 SiHF640 linear applications of power MOSFET IRF640 irf640 Vishay SiHF640-E3
    Text: IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 70 • Fast Switching Qgs (nC) 13 • Ease of Paralleling 39 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		IRF640, SiHF640 O-220 O-220 50lectual 18-Jul-08 IRF640PBF IRF640 linear applications of power MOSFET IRF640 irf640 Vishay SiHF640-E3 PDF

    200 Amp bridge mosfet

    Abstract: circuit using irf640 AD7794 AD7795 07488 irf640 IRF640 applications note Current source AD7719 AD8610
    Text: AN-968 APPLICATION NOTE One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106, U.S.A. • Tel: 781.329.4700 • Fax: 781.461.3113 • www.analog.com Current Sources: Options and Circuits by Martin Murnane VDD REFIN1 + GND IN+ OUT– OUT+ AVDD AD7794/AD7795


    Original     		AN-968 AD7794/AD7795 AD7794 AN07488-0-10/08 200 Amp bridge mosfet circuit using irf640 AD7795 07488 irf640 IRF640 applications note Current source AD7719 AD8610 PDF

    IRF640 smd

    Abstract: IRF640 applications note irf640 IRF640S IRF640 Field-Effect Transistor IRF640 application note
    Text: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES IRF640, IRF640S SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance d VDSS = 200 V ID = 16 A


    Original     		IRF640, IRF640S IRF640 O220AB) IRF640S OT404 IRF640 smd IRF640 applications note IRF640 Field-Effect Transistor IRF640 application note PDF

    IRF640

    Abstract: SiHF640 SiHF640-E3 linear applications of power MOSFET IRF640 IRF640 applications note IRF640 application note
    Text: IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 70 • Fast Switching Qgs (nC) 13 • Ease of Paralleling 39 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		IRF640, SiHF640 2002/95/EC O-220AB O-220AB 11-Mar-11 IRF640 SiHF640-E3 linear applications of power MOSFET IRF640 IRF640 applications note IRF640 application note PDF

    IRF640 applications note

    Abstract: IRF640 circuit
    Text: IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 70 • Fast Switching Qgs (nC) 13 • Ease of Paralleling 39 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		IRF640, SiHF640 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF640 applications note IRF640 circuit PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 70 • Fast Switching Qgs (nC) 13 • Ease of Paralleling 39 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		IRF640, SiHF640 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 70 • Fast Switching Qgs (nC) 13 • Ease of Paralleling 39 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		IRF640, SiHF640 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    IRF640 applications note

    Abstract: IRF640 circuit IRF640 n-channel MOSFET
    Text: IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 70 • Fast Switching Qgs (nC) 13 • Ease of Paralleling 39 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		IRF640, SiHF640 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF640 applications note IRF640 circuit IRF640 n-channel MOSFET PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 70 • Fast Switching Qgs (nC) 13 • Ease of Paralleling 39 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		IRF640, SiHF640 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 70 • Fast Switching Qgs (nC) 13 • Ease of Paralleling 39 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		IRF640, SiHF640 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 70 • Fast Switching Qgs (nC) 13 • Ease of Paralleling 39 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		IRF640, SiHF640 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    IFRZ44

    Abstract: IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N
    Text: PRODUCT INDEX ALPHA NUMERIC INDEX Part numbers In BOLD are preferred standard parts. PART NO. 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRFS30 IRF531 IRF532 IRF533 IRF540 IRF541


    OCR Scan     		2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IFRZ44 IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N PDF

    2N7001

    Abstract: CTX08-13484-X1 2N5457 MOTOROLA CTX08 DN-79 CTX08-13619 CTX08-13619-X1 "N-Channel JFET" irf640 AC TO DC BY irf840
    Text: DN-79 Design Note UCC3750 Demonstration Board Operating Guidelines by Dhaval Dalal The UCC3750 demonstration board is designed to illustrate a typical ring generator application using the UCC3750. It is designed to provide a 20Hz, 85V RMS output for loads up to 10 -15


    Original     		DN-79 UCC3750 UCC3750. CTX08-13484-X1 CTX08-13619-X1 UCC3750N UC3853 2N7001 CTX08-13484-X1 2N5457 MOTOROLA CTX08 DN-79 CTX08-13619 CTX08-13619-X1 "N-Channel JFET" irf640 AC TO DC BY irf840 PDF

    Snubber circuits theory, design and application

    Abstract: CTX08-13916 IRF640 application note SEM-700 Closing The Feedback Loop UNITRODE product and applications handbook telsa power MOSFET IRF640 80 watt power MOSFET IRF640 80 watt as switch philips 3C85 ferrite material PHILIPS toroidal core 3c85
    Text: APPLICATION NOTE U-165 - SLUU096 - JUNE 2001 Lisa Dinwoodie Reference Design: Isolated 50 Watt Flyback Converter Using the UCC3809 Primary Side Controller UNITRODE CORPORATION U-165 Reference Design: Isolated 50 Watt Flyback Converter Using the UCC3809 Primary Side Controller


    Original     		U-165 SLUU096 UCC3809 U-165 Snubber circuits theory, design and application CTX08-13916 IRF640 application note SEM-700 Closing The Feedback Loop UNITRODE product and applications handbook telsa power MOSFET IRF640 80 watt power MOSFET IRF640 80 watt as switch philips 3C85 ferrite material PHILIPS toroidal core 3c85 PDF

    irf640

    Abstract: 5d surface mount diode IRF640L IRF640S SiHF640S SiHF640S-E3 power MOSFET IRF640 IRF640SPBF
    Text: IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.18 Qg (Max.) (nC) 70 Qgs (nC) 13 Qgd (nC) 39 Configuration Single D D2PAK (TO-263) I2PAK (TO-262)


    Original     		IRF640S, IRF640L, SiHF640S SiHF640L O-263) O-262) 18-Jul-08 irf640 5d surface mount diode IRF640L IRF640S SiHF640S-E3 power MOSFET IRF640 IRF640SPBF PDF

    power MOSFET IRF640 80 watt

    Abstract: OSCON 6SH330M power MOSFET IRF640 80 watt as switch Snubber circuits theory, design and application SEM-700 Closing The Feedback Loop FERRITE TRANSFORMER 20khz toroid unitrode SEM-1100 CTX08-13916 IGBT gate optocoupler driver for a buck converter 3C85 toroid
    Text: APPLICATION NOTE U-165 Lisa Dinwoodie Design Review: Isolated 50 Watt Flyback Converter Using the UCC3809 Primary Side Controller and the UC3965 Precision Reference and Error Amplifier U-165 Design Review: Isolated 50 Watt Flyback Converter Using the UCC3809 Primary Side


    Original     		U-165 UCC3809 UC3965 power MOSFET IRF640 80 watt OSCON 6SH330M power MOSFET IRF640 80 watt as switch Snubber circuits theory, design and application SEM-700 Closing The Feedback Loop FERRITE TRANSFORMER 20khz toroid unitrode SEM-1100 CTX08-13916 IGBT gate optocoupler driver for a buck converter 3C85 toroid PDF

    2N7001

    Abstract: CTX08-13619 CTX08-13484-X1 Unitrode DN-79 Application of irf840 CTX08-13484 CTX08-13619-X1 UCC3750 transistor jfet 2N5457 1N5818
    Text: DN-79 Design Note UCC3750 Demonstration Board Operating Guidelines by Dhaval Dalal The UCC3750 demonstration board is designed to illustrate a typical ring generator application using the UCC3750. It is designed to provide a 20Hz, 85V RMS output for loads up to 10 -15


    Original     		DN-79 UCC3750 UCC3750. 2N7001 CTX08-13619 CTX08-13484-X1 Unitrode DN-79 Application of irf840 CTX08-13484 CTX08-13619-X1 transistor jfet 2N5457 1N5818 PDF

    IRF640 SILICONIX

    Abstract: No abstract text available
    Text: IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.18 Qg (Max.) (nC) 70 Qgs (nC) 13 Qgd (nC) 39 Configuration Single D D2PAK (TO-263) I2PAK (TO-262)


    Original     		IRF640S, IRF640L, SiHF640S SiHF640L O-262) O-263) 12-Mar-07 IRF640 SILICONIX PDF

    ZENER DIODE 814

    Abstract: zener 814 panasonic ECU-S2A331JCB ECU-S1J104MEA UPR2A470MPH KOA ELECTRONICS CF d616a ECU-S1J474MEB koa rss CS5101
    Text: CS5101DEMO/D Demonstration Note for CS5101 Multiple Output, Telecommunications Power Supply with Secondary Side Control for Tight Output Regulation http://onsemi.com DEMONSTRATION NOTE INTRODUCTION The CS5101 demonstration board is a multiple–output 5.0 V @ 7.0 A; 3.3 V @ 5.0 A , isolated, 50 W power supply


    Original     		CS5101DEMO/D CS5101 CS5101 CS5101, CS3843 r14525 ZENER DIODE 814 zener 814 panasonic ECU-S2A331JCB ECU-S1J104MEA UPR2A470MPH KOA ELECTRONICS CF d616a ECU-S1J474MEB koa rss PDF

    IRF640L

    Abstract: IRF640S SiHF640S IRF640STRRPBF
    Text: IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Low-Profile Through-Hole • Available in Tape and Reel • Dynamic dV/dt Rating


    Original     		IRF640S, IRF640L, SiHF640S SiHF640L 2002/95/EC O-263) O-262) 11-Mar-11 IRF640L IRF640S IRF640STRRPBF PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Low-Profile Through-Hole • Available in Tape and Reel • Dynamic dV/dt Rating


    Original     		IRF640S, IRF640L, SiHF640S SiHF640L 2002/95/EC O-262) O-263) 18-Jul-08 PDF