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    IRF530F Search Results

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    IRF530F Price and Stock

    International Rectifier IRF530FX

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    IRF530F Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF530F1 STMicroelectronics N-channel MOSFET, 100V, 9A Scan PDF
    IRF530FI STMicroelectronics N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS Original PDF
    IRF530FI STMicroelectronics TRANS MOSFET N-CH 100V 14A 3ISOWATT220 Original PDF
    IRF530FI STMicroelectronics N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Original PDF
    IRF530FI Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF530FI Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRF530FI STMicroelectronics Shortform Data Book 1988 Short Form PDF
    IRF530FP STMicroelectronics TRANS MOSFET N-CH 100V 10A 3TO-220FP Original PDF
    IRF530FP STMicroelectronics N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Original PDF

    IRF530F Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRF530

    Abstract: transistor irf530 IRF530FI IRF530 application O-220F transistor irf 130 O220F tr irf530
    Text: IRF530 IRF530FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRF530 IRF530F I • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V 100 V < 0.16 Ω < 0.16 Ω 16 A 11 A TYPICAL RDS(on) = 0.12 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		IRF530 IRF530FI IRF530F 100oC 175oC O-220 O-220FI IRF530 transistor irf530 IRF530FI IRF530 application O-220F transistor irf 130 O220F tr irf530 PDF

    IRF530FP

    Abstract: No abstract text available
    Text: IRF530FP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRF530FP • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.16 Ω 10 A TYPICAL RDS(on) = 0.12 Ω 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE AVALANCHE RUGGED TECHNOLOGY


    Original     		IRF530FP 100oC 175oC O-220FP IRF530FP PDF

    IRF530

    Abstract: IRF530 IRF530FI IRF530F DATA SHEET OF IRF530 IRF530FI equivalent IRF530FI transistor irf530 tr irf530
    Text: IRF530 IRF530FI  N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRF530 IRF530F I • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V 100 V < 0.16 Ω < 0.16 Ω 16 A 11 A TYPICAL RDS(on) = 0.12 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		IRF530 IRF530FI IRF530F 100oC 175oC O-220 ISOWATT220 IRF530 IRF530 IRF530FI DATA SHEET OF IRF530 IRF530FI equivalent IRF530FI transistor irf530 tr irf530 PDF

    IRF530

    Abstract: IRF530FI
    Text: IRF530 IRF530FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF530 IRF530FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V 100 V < 0.16 Ω < 0.16 Ω 16 A 10 A TYPICAL RDS(on) = 0.095 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		IRF530 IRF530FI 100oC 175oC O-220 ISOWATT220 IRF530 IRF530FI PDF

    IRF530FP

    Abstract: OT 306 IRF 950
    Text: IRF530FP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRF 530FP • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.16 Ω 10 A TYPICAL RDS(on) = 0.12 Ω 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE AVALANCHE RUGGED TECHNOLOGY


    Original     		IRF530FP 530FP 100oC 175oC O-220FP IRF530FP OT 306 IRF 950 PDF

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 PDF

    STE30NA50-DK

    Abstract: ISOWATT-220 to220 ste38na50 transistors irf640 STE30NA50 STP5NA90FI STB30N10 STE30NA50-da ISOWATT220
    Text: TRANSISTORS POWER MOSFETS POWER MOS 2 1 2 3 3 1 ISOTOPTM DPAK D2PAK IPAK SOT-82 SOT-223 1 ISOWATT 220TM Fully isolated TO-220 MAX220TM ISOWATT 218TM (Fully isolated) TO-247 MAX247TM Internal schematic diagrams POWER MOS VDSS (V) Ron (max) (Ω) 1000 1000


    Original     		OT-82 OT-223 O-220 220TM MAX220TM 218TM O-247 MAX247TM Max247 Max220 STE30NA50-DK ISOWATT-220 to220 ste38na50 transistors irf640 STE30NA50 STP5NA90FI STB30N10 STE30NA50-da ISOWATT220 PDF

    ste30na50

    Abstract: STP3N60FI STE45N50 STHV82 stk2n50 ste24n90 STB55N06 ste38na50 STP55NE06FP STB40N03L-20
    Text: SOT-223 VDSS RDS on max (V) (Ω) 30 0.05 0.06 0.12 0.12 0.12 0.27 0.45 1.50 20.0 60 100 200 800 Type STN4NE03L STN4NE03 STN3NE06 STN3NE06L STN3NE06L STN2N10 STN2NE10L ✠ STN1N20 STN1NB80 ✠ ID(cont) DEVICES (A) REPLACED 4.0 4.0 3.0 3.0 3.0 2.0 2.0 1.0


    Original     		OT-223 STN4NE03L STN4NE03 STN3NE06 STN3NE06L STN2N10 STN2NE10L STN1N20 STN1NB80 ste30na50 STP3N60FI STE45N50 STHV82 stk2n50 ste24n90 STB55N06 ste38na50 STP55NE06FP STB40N03L-20 PDF

    std2n52

    Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
    Text: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232


    Original     		2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent PDF

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent PDF

    IRF 260 N

    Abstract: transistor IRF 531 IRF 850 transistor 531 IRF 530
    Text: ¿ = 7 IRF 530/FI-531/FI IRF 532/FI-533/FI S G S -T H O M S O N ^ 7 # „ HlOiaiSiiBliaïUCTMMIKcül; N • CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIM INARY DATA TYPE V DSS ^DS on 'd ' IRF530 IRF530FI 100 V 100 V 0.16 n 0.16 n 14 A 9 A IRF531 IRF531FI


    OCR Scan     		530/FI-531/FI 532/FI-533/FI IRF530 IRF530FI IRF531 IRF531FI IRF532 IRF532FI IRF533 IRF533FI IRF 260 N transistor IRF 531 IRF 850 transistor 531 IRF 530 PDF

    Untitled

    Abstract: No abstract text available
    Text: £ j ï SGS-THOMSON ULKgraMOeS IRF530 IRF530FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYP E IR F 530 IR F 530 F I • . . . . . . V dss RDS on Id 100 V 100 V < 0 .1 6 ß < 0 .1 6 ß 16 A 10 A TYPICAL R D S (on) = 0.095 £2 AVALANCHE RUGGED TECHNOLOGY


    OCR Scan     		IRF530 IRF530FI PDF

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON i L £ra@*S IRF530 IRF530FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IR F 5 3 0 IR F 5 3 0 F I VDSS 100 100 V V FÌD S(on Id 0 .1 6 n 0 .1 6 n 16 A 10 A . • . . . . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		IRF530 IRF530FI O-220 ISOWATT220 PDF

    IRF 260 N

    Abstract: transistor IRF 531 transistor 531 IRF 530 ISOWATT-220 IRF530FI ISOWATT220 IRF530 530FI IRF532
    Text: 1 SGS-THOMSON 3QE D 7^237 0 02 ^77 3 S -TH O M S O N • • • • • "'P '3 > °ì~ \1 [RF 530/FI-531/FI IRF 532/FI-533/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V qss f*DS on IRF530 IRF530FI 100 V 100 V 0.16 ß 0.16 ß Id ' 14 A 9 A


    OCR Scan     		530/FI-531/FI 532/FI-533/FI IRF530 IRF530FI IRF531 IRF531FI IRF532 IRF532FI IRF533 IRF533FI IRF 260 N transistor IRF 531 transistor 531 IRF 530 ISOWATT-220 ISOWATT220 530FI PDF

    Untitled

    Abstract: No abstract text available
    Text: Zjï SGS-THOMSON ¡ILIOTI^OKinei IRF530FP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRF530FP V d s s 100 V R d S o ii < 0.16 a Id 10 A . TYPICAL RDs(on) =0.12 £2 . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C . LOW GATE CHARGE


    OCR Scan     		IRF530FP 100lse O-22QFP PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF530 IRF530FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IR F 530 IR F 5 3 0 F I . . . . . . . . V d ss R d S o ii 100 V 100 V < 0.1 6 Q. < 0.1 6 Q. Id 16 11 A A TYPICAL RDs(on) =0.12 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    OCR Scan     		IRF530 IRF530FI IRF530/FI ISQWATT220 PDF

    IRF740 smd

    Abstract: tsd4m350v TSD4M250V SGSP363 irf740 mosfet IRF540 SGSP461 tsd4m250 IRF823 SGS100MA010D1
    Text: ^ 7# SGS-THOMSON AUTOMOTIVE POWER TRANSISTORS MOSFET TRANSISTORS FOR AUTOMOTIVE APPLICATIONS Continued V(BR) DSS (V) r DS (on) max (Q]l 80 80 80 80 80 80 80 80 80 80 80 80 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 0.36


    OCR Scan     		IRF523 IRF523FI IRF521 IRF521FI IRF533 IRF533FI IRF531 IRF531FI IRF543 IRF543FI IRF740 smd tsd4m350v TSD4M250V SGSP363 irf740 mosfet IRF540 SGSP461 tsd4m250 IRF823 SGS100MA010D1 PDF

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


    OCR Scan     		PDF

    ISOWATT220

    Abstract: No abstract text available
    Text: SELECTION GUIDE BY VOLTAGE RDS on 3 •d V(BR)DSS (max) (A) (V) (fi) Type •□(max) (A) P«ot (W) 9fs min (mho) ^iss max (pF) TO-220 TO-220 ISOWATT220 TO-220 ISOWATT220 SGSP358 MTP15N05L MTP15N05LFI STLT19 STLT19FI 7.00 15.00 10.00 15.00 10.00 50 75 30


    OCR Scan     		O-220 ISOWATT220 ISOWATT22Q STH107N50 STH10N50 STHI10N50 STHI10N50FI PDF

    sgs*P381

    Abstract: ISOWATT218 IGBT ISOWATT220 STLT20 MTP3055AFI SGSP381 IRFP453FI SGSP579 SGSP591
    Text: SELECTION GUIDE BY PART NUMBER V BR DSS 9«s min (mho) max (PF) Page 70 75 75 75 35 8.00 3.00 4.00 4.00 4.00 700typ 2000 2000 2000 2000 159 163 167 173 167 30.00 20.00 12.00 19.00 19.00 75 35 75 75 78 4.00 4.00 2.70 4.00 4.00 2000 2000 2000 2000 2000 177


    OCR Scan     		P-220 ISOWATT220 O-220 O-220 STHI07N50 STHI07N50FI STHI10N50 STHI10N50FI sgs*P381 ISOWATT218 IGBT STLT20 MTP3055AFI SGSP381 IRFP453FI SGSP579 SGSP591 PDF

    TSD45N50V

    Abstract: TSD200N05V TSD40N55V TSD180N10V IRF540 TSD135N10V TSD150N10V TSD4M450V TSD17N100 TSD160N05V
    Text: SELECTION GUIDE BY - PART NUMBER Type V BR DSS (V) ^DS(on) ^ Id max (A) (H) Package iD(max) (A) Ptot (W) Qfs min (S) Ciss max (pF) 850 2000 BUZ10 50 0.080 13.00 TO-220 20.0 85 6.00 BUZ11 BUZ11A BUZ11FI BUZ21 50 0.040 0.055 0.040 0.100 18.00 15.00 18.00 9.00


    OCR Scan     		O-220 TSD45N50V TSD200N05V TSD40N55V TSD180N10V IRF540 TSD135N10V TSD150N10V TSD4M450V TSD17N100 TSD160N05V PDF

    SGSP321

    Abstract: sgs*P381 SGSP381 SGSP201 MTP3055AFI STLT20 STLT20FI BUZ11S2FI SGSP591 IRF153
    Text: Æ T SGS-THOMSON ^ 7# GENERAL PURPOSE & INDUSTRIAL MOÊ IILIOT©R!ID gi POWER MOS @ >D Package Type V(BR DSS r DS (on) max (V) (0) (A) 60 60 60 60 60 0.15 0.15 0.15 0.13 0.08 6 7.5 7.5 8 20 ISOWATT 220 TO 220 ISOWATT 220 TO 220 TO 3 MTP3055AFI STLT20*


    OCR Scan     		MTP3055AFI STLT20* STLT20FI SGSP321 IRF153 IRFP153 IRFP153FI STLT30* SGSP381 SGSP481 sgs*P381 SGSP201 STLT20 STLT20FI BUZ11S2FI SGSP591 PDF

    IRFP450FI

    Abstract: IRF540FI ISOWATT221 Tech MOS Technology STLT20FI
    Text: GENERAL INFORMATION The Power M OS devices presented in this databook are made using well proven SGS-THOMSON tech­ nology. SGS-THO MSO N Power MOS technology stands, with equal stature, firmly alongside the com pany's wide range of devices in Power BIPOLAR and


    OCR Scan     		BUZ71FI STLT19FI STLT20FI IRFZ20FI IRF520FI IRF530FI IRF540FI IRF620FI IRF820FI IRF821 IRFP450FI ISOWATT221 Tech MOS Technology PDF

    IRF722P

    Abstract: IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10
    Text: CROSS REFERENCE SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI 2SK312 2SK313


    OCR Scan     		2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 IRF722P IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10 PDF