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    IRF53 Price and Stock

    Infineon Technologies AG IRF5305STRLPBF

    MOSFET P-CH 55V 31A D2PAK
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    DigiKey IRF5305STRLPBF Cut Tape 8,988 1
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    IRF5305STRLPBF Digi-Reel 8,988 1
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    IRF5305STRLPBF Reel 8,800 800
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    Avnet Americas IRF5305STRLPBF Reel 1,600 8 Weeks 1,600
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    IRF5305STRLPBF Ammo Pack 1
    • 1 $1.55
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    Mouser Electronics IRF5305STRLPBF 6,184
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    Newark IRF5305STRLPBF Cut Tape 37 1
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    IRF5305STRLPBF Reel 1,600
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    EBV Elektronik IRF5305STRLPBF 142,400 9 Weeks 800
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    New Advantage Corporation IRF5305STRLPBF 113,600 1
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    Win Source Electronics IRF5305STRLPBF 25,600
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    Infineon Technologies AG IRF530NPBF

    MOSFET N-CH 100V 17A TO220AB
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    DigiKey IRF530NPBF Tube 6,872 1
    • 1 $1.42
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    Avnet Americas IRF530NPBF Tube 15,326 18 Weeks 1
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    IRF530NPBF Bulk 17 Weeks, 5 Days 1
    • 1 $1.02
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    Mouser Electronics IRF530NPBF 578
    • 1 $1.04
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    Newark IRF530NPBF Bulk 2,016 1
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    RS IRF530NPBF Bulk 2 1
    • 1 $0.94
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    TME IRF530NPBF 93 1
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    Chip One Stop IRF530NPBF Tube 4
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    CoreStaff Co Ltd IRF530NPBF 4
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    EBV Elektronik IRF530NPBF 11,000 19 Weeks 1,000
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    Win Source Electronics IRF530NPBF 24,480
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    Vishay Siliconix IRF530PBF

    MOSFET N-CH 100V 14A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF530PBF Tube 5,144 1
    • 1 $1.95
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    RS IRF530PBF Bulk 1,000
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    New Advantage Corporation IRF530PBF 10,950 1
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    Vishay Siliconix IRF530STRLPBF

    MOSFET N-CH 100V 14A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF530STRLPBF Cut Tape 3,053 1
    • 1 $2.46
    • 10 $1.583
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    IRF530STRLPBF Digi-Reel 3,053 1
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    IRF530STRLPBF Reel 2,400 800
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    UMW IRF5305STRL

    MOSFET P-CH 55V 31A D2PAK
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    DigiKey IRF5305STRL Reel 800 800
    • 1 -
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    IRF5305STRL Digi-Reel 800 1
    • 1 $1.25
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    IRF5305STRL Cut Tape 800 1
    • 1 $1.25
    • 10 $0.839
    • 100 $1.25
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    Find more IRF53 price and stock on Findchips.com

    IRF53 Datasheets (264)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF530 Fairchild Semiconductor 14A, 100V, 0.160 Ohm, N-Channel Power MOSFETs Original PDF
    IRF530 Harris Semiconductor Power MOSFET Selection Guide Original PDF
    IRF530 On Semiconductor N-Channel Enhancement-Mode Silicon Gate Original PDF
    IRF530 STMicroelectronics N-channel power MOSFET, 20 A, 100V. Original PDF
    IRF530 STMicroelectronics N-Channel ENHANCEMENT MODE POWER MOS TRANSISTOR Original PDF
    IRF530 STMicroelectronics N-CHANNEL 100V - 0.115 ? - 14A TO-220 LOW GATE Original PDF
    IRF530 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF530 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 14A TO-220AB Original PDF
    IRF530 Fairchild Semiconductor N-Channel Power MOSFETs, 20 A, 60-100 V Scan PDF
    IRF530 FCI POWER MOSFETs Scan PDF
    IRF530 Frederick Components Power MOSFET Selection Guide Scan PDF
    IRF530 General Electric Power Transistor Data Book 1985 Scan PDF
    IRF530 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. Scan PDF
    IRF530 Harris Semiconductor N-channel Power Mosfets Avalanche Energy Rated Scan PDF
    IRF530 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF530 International Rectifier HEXFET Power Mosfet Scan PDF
    IRF530 International Rectifier N-Channel Power MOSFETs Scan PDF
    IRF530 International Rectifier TO-220 N-Channel HEXFET Power MOSFET Scan PDF
    IRF530 Intersil Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, 100V, 14A, Pkg Style TO-220AB Scan PDF
    IRF530 Motorola European Master Selection Guide 1986 Scan PDF
    ...

    IRF53 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRF530S

    Abstract: SiHF530S SiHF530S-E3 910-20-11
    Text: IRF530S, SiHF530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		IRF530S, SiHF530S O-263) 2002/95/EC 11-Mar-11 IRF530S SiHF530S-E3 910-20-11 PDF

    AN-994

    Abstract: IRF530N IRF530NL IRF530NS IRF530S 4.5v to 100v input regulator
    Text: PD - 91352B IRF530NS IRF530NL HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 90mΩ G ID = 17A S Description


    Original     		91352B IRF530NS IRF530NL EIA-418. AN-994 IRF530N IRF530NL IRF530NS IRF530S 4.5v to 100v input regulator PDF

    Untitled

    Abstract: No abstract text available
    Text: PD- 95982 IRF530SPbF • Lead-Free Document Number: 91020 12/21/04 www.vishay.com 1 IRF530SPbF Document Number: 91020 www.vishay.com 2 IRF530SPbF Document Number: 91020 www.vishay.com 3 IRF530SPbF Document Number: 91020 www.vishay.com 4 IRF530SPbF Document Number: 91020


    Original     		IRF530SPbF 08-Mar-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature


    Original     		IRF530, SiHF530 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    IRF530SPBF

    Abstract: IRF530S SiHF530S SiHF530S-E3 IRF530STRLPBF IRF530STRL
    Text: IRF530S, SiHF530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) (Ω) VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single D Surface Mount Available in Tape and Reel Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		IRF530S, SiHF530S O-263) 18-Jul-08 IRF530SPBF IRF530S SiHF530S-E3 IRF530STRLPBF IRF530STRL PDF

    IRF5305

    Abstract: No abstract text available
    Text: PD - 91385B IRF5305 HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -55V RDS on = 0.06Ω G ID = -31A S Description Fifth Generation HEXFETs from International Rectifier


    Original     		91385B IRF5305 O-220 IRF5305 PDF

    IRF530N

    Abstract: 4.5v to 100v input regulator
    Text: PD - 91351 IRF530N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 90mΩ G ID = 17A S Description Advanced HEXFET® Power MOSFETs from International


    Original     		IRF530N O-220 O-220AB IRF530N 4.5v to 100v input regulator PDF

    IRF530N

    Abstract: AN7254 AN7260 AN9321 AN9322 TB334
    Text: IRF530N TM Data Sheet March 2000 File Number 4843 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET Packaging Features JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE • Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER


    Original     		IRF530N O-220AB IRF530N AN7254 AN7260 AN9321 AN9322 TB334 PDF

    IRF530N

    Abstract: 4.5V TO 100V INPUT REGULATOR
    Text: PD - 91351 IRF530N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 90mΩ G ID = 17A S Description Advanced HEXFET® Power MOSFETs from International


    Original     		IRF530N O-220 IRF530N 4.5V TO 100V INPUT REGULATOR PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF530NS IRF530NL l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 90mΩ G ID = 17A S Description D2Pak IRF530NS The D2Pak is a surface mount power package capable of accommodating


    Original     		IRF530NS IRF530NL IRF530NL) EIA-418. PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF5305S/L l l l l l l l Advanced Process Technology Surface Mount IRF5305S Low-profile through-hole (IRF5305L) 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated TO-263 TO-262 Description The D2Pak is a surface mount power package capable of


    Original     		IRF5305S/L IRF5305S) IRF5305L) O-263 O-262 PDF

    DM 321

    Abstract: IRF530 mosfet TA17411 RF1S540SM9A IRF530 data sheet in IRF530 datasheet N-Channel Switch intersil relay 6v 100 ohm tr irf530 IRF530
    Text: 00-05-19 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-073-03 IRF530 MOSFET trans IRF530, RF1S530SM Data Sheet 14A, 100V, 0.160 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate


    Original     		IRF530 IRF530, RF1S530SM DM 321 IRF530 mosfet TA17411 RF1S540SM9A IRF530 data sheet in IRF530 datasheet N-Channel Switch intersil relay 6v 100 ohm tr irf530 PDF

    IRF530N

    Abstract: IRF530N applications
    Text: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES IRF530N SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance d VDSS = 100 V ID = 17 A g RDS ON ≤ 110 mΩ


    Original     		IRF530N O220AB) IRF530N IRF530N applications PDF

    IRF530 vishay

    Abstract: SiHF530 IRF530PBF tr irf530 IRF530 SiHF530-E3 IRF530P
    Text: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature


    Original     		IRF530, SiHF530 O-220 O-220 18-Jul-08 IRF530 vishay IRF530PBF tr irf530 IRF530 SiHF530-E3 IRF530P PDF

    Untitled

    Abstract: No abstract text available
    Text: ^Pioducti, Una. TELEPHONE: 973 376-2922 (212) 227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. FAX: (973) 376-8960 IRF530 14A, 100V, 0.160 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		IRF530 300ns, 530nH, PDF

    IRF5305L

    Abstract: IRF5305S
    Text: PD - 91386C IRF5305S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF5305S l Low-profile through-hole (IRF5305L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -55V RDS(on) = 0.06Ω


    Original     		91386C IRF5305S/L IRF5305S) IRF5305L) IRF5305L IRF5305S PDF

    IRF530

    Abstract: IRF532 irf531 IRF533 1RF533 t5d 58 reliability irf530 irf-530
    Text: ZETEX S EMI CONDUCT ORS W D T=] 70S7f i DDDSSSb 1 95D 0 5 5 5 6 IRF530 IRF531 IRF532 IRF533 N-channel enhancement mode vertical DMOS PET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability


    OCR Scan     		70S7f IRF530 IRF531 IRF532 IRF533 O-220 IRF533 1RF533 t5d 58 reliability irf530 irf-530 PDF

    2CS-42724

    Abstract: RRF530 S33R IRF530R IRF531R IRF532R IRF533R TC. 12A MOSFET Drivers
    Text: _ Rugged Power MOSFETs File Number 1993 IRF530R, IRF531R, IRF532R, IRF533R Avalanche Energy Rated N-Channel Power MOSFETs 12A and 14A, 60V-100V rDs on = 0.18CÎ and 0 .2 5 0 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated


    OCR Scan     		IRF530R, IRF531R, IRF532R, IRF533R 0V-100V IRF532R IRF533R 2CS-42724 2CS-42724 RRF530 S33R IRF530R IRF531R TC. 12A MOSFET Drivers PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-91352A In te rn a tio n a l I ö R Rectifier IRF530NS/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF530NS Low-profile through-hole (IRF530NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss = 1 0 0 V R d S (o r) = 0 .1 1 f ì


    OCR Scan     		IRF530NS) IRF530NL) PD-91352A IRF530NS/L PDF

    RF530

    Abstract: 1RF530 irf532 IRF530 HEXFET TRANSISTORS irf531 IR IRF532 1RF531 TYN 058 IRF530 LIRF530
    Text: he o | qassqss 0000450 1 | Data Sheet No. PD-9.307N T-39-11 INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED* LOWER ON STATE RESISTANCE, 175°C OPERATING TEMPERATURE IRF530 IRF531 IRF532 IRF533Î HEXFET TRANSISTORS


    OCR Scan     		T-39-11 IRF530 IRF531 IRF532 IRF533Î O-220AB IRF530, IRF531, IRF532, IRF533 RF530 1RF530 IRF530 HEXFET TRANSISTORS IR IRF532 1RF531 TYN 058 LIRF530 PDF

    D84DL2

    Abstract: IRF530 N-Channel fet
    Text: IRF530,531 D84DL2,K2 Ftrnr HELD EFFECT POWER TRANSISTOR 114.0 AMPERES 100, 60 VOLTS R[ S ON) = 0.18 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.


    OCR Scan     		IRF530 D84DL2 100ms TC-25Â IRF530/D84DL2 IRF531/D84DK2 N-Channel fet PDF

    Untitled

    Abstract: No abstract text available
    Text: I i .•_ I PRELIMINARY International I R Rectifier P D 9 .1 3 8 5 IRF5305 HEXFET Power MOSFET • • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Vdss = -55 V


    OCR Scan     		IRF5305 6C413 554S2 D024242 PDF

    irf530

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFETS IRF530/531 FEATURES • Lower R ds On • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		IRF530/531 IRF530 IRF531 Q02fl755 irf530 PDF

    IRF530

    Abstract: No abstract text available
    Text: International HflSSMSE D Dl Mb Sb DbS i“r]Rectifier HEXFET Power M O S F E T INR PD-9.3070 IRF530 bSE INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements


    OCR Scan     		IRF530 O-220 T0-220 IRF530 PDF