ortec 457
Abstract: tennelec gas solenoid valve R3809U irf 539 tektronix 454 tennelec tc-454 ortec ortec 454 c4840
Text: NEAR INFRARED MICROCHANNEL PLATEPHOTOMULTIPLIER TUBE WITH COOLER R3809U-68/-69 WITH C10221 Compact NIR MCP-PMT Series Featuring with Fast Time Response FEATURES ●High Speed Rise Time: 170 ps Typ. TTS (Transit Time Spread): 100 ps (FWHM) A ●Compact Profile
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R3809U-68/-69
C10221
LR3809U-68/-69
TPMHF0499
LC10221
TACCF0194
TPMOB0198EA
SE-171-41
TPMH1293E03
ortec 457
tennelec
gas solenoid valve
R3809U
irf 539
tektronix 454
tennelec tc-454
ortec
ortec 454
c4840
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PDF
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C4840
Abstract: tennelec ortec 457 irf 539 tennelec tc-454 ortec 454 ortec TAC E3059-500 Hamamatsu microchannel plates irf 539 DATA
Text: MICROCHANNEL PLATEPHOTOMULTIPLIER TUBE R3809U-61/-63/-64 Compact High Sensitivity MCP-PMT Series Featuring with Fast Time Response FEATURES ●High Sensitivity QE: 12 % -61 , 36 % (-63), 40 % (-64) ●High Speed Rise Time: 200 ps (-61), 180 ps (-63/-64) IRF A (Instrument Response Function): 150 ps at FWHM: (-61)
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R3809U-61/-63/-64
SE-171-41
TPMH1295E03
C4840
tennelec
ortec 457
irf 539
tennelec tc-454
ortec 454
ortec TAC
E3059-500
Hamamatsu microchannel plates
irf 539 DATA
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PDF
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IRF 260 N
Abstract: irf 44 n IRF 409 irf 9246 P 181 YE IRF 1060 IRF 1040 9249B HEXFET IRF
Text: IRLI3705N Package Outline HEXFET TO-220 Fullpak Outline Dimensions are shown in millimeters inches 10.60 (.417 ) 10.40 (.409 ) ø 3 .40 (.1 33) 3 .10 (.1 23) 4.80 (.189 ) 4.60 (.181 ) -A3.7 0 (.145) 3.2 0 (.126) 16 .0 0 (.630) 15 .8 0 (.622) 2.80 (.110)
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IRLI3705N
O-220
IRF 260 N
irf 44 n
IRF 409
irf 9246
P 181 YE
IRF 1060
IRF 1040
9249B
HEXFET IRF
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PDF
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ortec 457
Abstract: PLP-01 canberra preamplifier irf 2205 TC-454 shg 850 LIDAR radar IRF 715 R5916U-50 410nm
Text: GATEABLE MICROCHANNEL PLATE PHOTOMULTIPLIER TUBE MCP-PMTs R5916U-50 SERIES Featuring Fast Gating Function with Improved Time Response and Switching Ratio FEATURES High Speed Gating by Low Supply Voltage (+10V) Gate Rise Time : 1 ns 1) Gate Width : 5 ns Fast Rise Time
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R5916U-50
TPMHB0244EA
TPMHB0245EB
20mV/div.
-3000V
S-164-40
TPMH1102E05
ortec 457
PLP-01
canberra preamplifier
irf 2205
TC-454
shg 850
LIDAR radar
IRF 715
410nm
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PDF
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IRFIZ46N
Abstract: IRFZ46N MOSFET IRF 630 IRFZ46N equivalent
Text: PD - 9.1306A IRFIZ46N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.020Ω G Description Fifth Generation HEXFETs from International Rectifier
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IRFIZ46N
O-220
IRFIZ46N
IRFZ46N
MOSFET IRF 630
IRFZ46N equivalent
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PDF
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IRF 042
Abstract: irf 540 mosfet IRL3803 IRLI3803
Text: PD - 9.1320B IRLI3803 HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D
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1320B
IRLI3803
O-220
IRF 042
irf 540 mosfet
IRL3803
IRLI3803
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PDF
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W922
Abstract: IRFIZ24E IRFZ24N EV700 irf*24n
Text: PD - 9.1673A IRFIZ24E HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 60V RDS on = 0.071Ω G Fifth Generation HEXFETs from International Rectifier
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IRFIZ24E
O-220
W922
IRFIZ24E
IRFZ24N
EV700
irf*24n
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PDF
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irf 480
Abstract: IRFIZ24E IRFZ24N IRFz24n equivalent
Text: PD - 9.1673A IRFIZ24E HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 60V RDS on = 0.071Ω G Fifth Generation HEXFETs from International Rectifier
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IRFIZ24E
O-220
irf 480
IRFIZ24E
IRFZ24N
IRFz24n equivalent
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PDF
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1501a
Abstract: IRFZ24N IRFIZ24N irf 480
Text: PD - 9.1501A IRFIZ24N HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 55V RDS on = 0.07Ω G Fifth Generation HEXFETs from International Rectifier
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IRFIZ24N
O-220
1501a
IRFZ24N
IRFIZ24N
irf 480
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PDF
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Equivalent IRF 44
Abstract: ultra low igss pA IRL2505 IRLI2505
Text: PD - 9.1327A IRLI2505 HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D
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IRLI2505
O-220
Equivalent IRF 44
ultra low igss pA
IRL2505
IRLI2505
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PDF
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IRFIZ34N
Abstract: IRFZ34N MOSFET 150 N IRF
Text: PD - 9.1489A IRFIZ34N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.04Ω G ID = 21A S Description Fifth Generation HEXFETs from International Rectifier
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Original
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IRFIZ34N
O-220
IRFIZ34N
IRFZ34N
MOSFET 150 N IRF
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PDF
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IRFIZ24N
Abstract: 1501a IRFZ24N irf 480 irf 044 mosfet
Text: PD - 9.1501A IRFIZ24N HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 55V RDS on = 0.07Ω G Fifth Generation HEXFETs from International Rectifier
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Original
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IRFIZ24N
O-220
IRFIZ24N
1501a
IRFZ24N
irf 480
irf 044 mosfet
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PDF
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IRFIZ46N
Abstract: IRFZ46N IRFZ46N equivalent irf 480 IRF 1040
Text: PD - 9.1306A IRFIZ46N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.020Ω G Description Fifth Generation HEXFETs from International Rectifier
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Original
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IRFIZ46N
O-220
IRFIZ46N
IRFZ46N
IRFZ46N equivalent
irf 480
IRF 1040
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 9.1501A IRFIZ24N HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D VDSS = 55V l RDS on = 0.07Ω G Fifth Generation HEXFETs from International Rectifier
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IRFIZ24N
O-220
insulatin245,
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PDF
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IRF 850 mosfet
Abstract: MOSFET IRF 635 MOSFET IRF 630 MOSFET IRF 713 IRF N-Channel Power MOSFETs IRF 740 N IRF 840 MOSFET IRF 450 MOSFET P Channel Power MOSFET IRF irf 540 mosfet
Text: FUNCTION GUIDE POWER MOSFETs N-CHANNEL MOSFET TO-220 Vos Id 50 60 80 100 120 150 180 200 2 2.5 350 IRF IRF 713 712 IRF IRF IRF 711 710 1.3 1.5 250 400 450 500 550 600 700 800 850 900 IRF IRF IRF IRF IRF SS P SSP 613 612 614 823 822 2N85 2N90 IRF IRF IRF IRF
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OCR Scan
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O-220
IR9523
IRF9522
IRF9513
IRF9511
IRF9512
IRF9510
IRF9623
IRF9621
IRF9622
IRF 850 mosfet
MOSFET IRF 635
MOSFET IRF 630
MOSFET IRF 713
IRF N-Channel Power MOSFETs
IRF 740 N
IRF 840 MOSFET
IRF 450 MOSFET
P Channel Power MOSFET IRF
irf 540 mosfet
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PDF
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IRFP 620
Abstract: transistor 623 ir 623 p bem diode IRFP P CHANNEL IRF 024
Text: Æ 7 S C S IRF 620/FI-621/FI IRF 622/FI-623/FI T H O M S O N N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^DS on IRF620 IRF620FI 200 V 200 V 0.8 !2 0.8 Q 5 A 4 A IRF621 IRF621FI 150 V 150 V 0.8 Q 0.8 S2 5 A 4 A IRF622 IRF622FI 200 V 200 V
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OCR Scan
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620/FI-621/FI
622/FI-623/FI
IRF620
IRF620FI
IRF621
IRF621FI
IRF622
IRF622FI
IRF623
IRF623FI
IRFP 620
transistor 623
ir 623 p
bem diode
IRFP P CHANNEL
IRF 024
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PDF
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IRFP 620
Abstract: SD 621 transistor IRFP 306 transistor irf620 transistor irf b 620 irf 620
Text: r Z 7 SGS-THOMSON ^7# HDlgœitLlKêTOiDÊi IRF 620/FI-621/FI IRF 622/FI-623/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF620 IRF620FI VDSS 200 V 200 V IRF621 IRF621FI 150 V 150 V IRF622 IRF622FI 200 V 200 V IRF623 IRF623FI 150 V 150 V RdS oii
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OCR Scan
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620/FI-621/FI
622/FI-623/FI
IRF620
IRF620FI
IRF621
IRF621FI
IRF622
IRF622FI
IRF623
IRF623FI
IRFP 620
SD 621 transistor
IRFP 306
transistor irf620
transistor irf b 620
irf 620
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PDF
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ir 222
Abstract: IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642
Text: Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150
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OCR Scan
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IRF640
IRF642
IRF630
IRF632
IRF620
IRF622
VN1706D
IRF641
IRF643
IRF631
ir 222
IRF620
IRF622
IRF630
IRF631
IRF632
IRF633
IRF640
IRF641
IRF642
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PDF
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irf 150 equivalent
Abstract: 2sk135 equivalent hitachi 2sk135 irf150 2SK134 equivalent irf 111 irf120 IRF351 IRF331 2SK132
Text: MOSPOWER Cross Reference List MOSPOWER Cross Reference List HEWLETT-PACKARD Industry Part No. HPWR-6501 HPWR-6502 HPWR-6503 HPWR-6504 BVd s S Volts rDS(on) (Ohms) Package 450 400 450 400 0.85 0.74 1.0 1.0 TO-3 TO -3 TO-3 TO-3 100 120 140 160 180 200 160
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OCR Scan
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PWR-6501
IRF441
HPWR-6502
IRF340
HPWR-6503
HPWR-6504
VN4001A
2SK132
IRF122
irf 150 equivalent
2sk135 equivalent
hitachi 2sk135
irf150
2SK134 equivalent
irf 111
irf120
IRF351
IRF331
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PDF
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2SK132
Abstract: 2SK133 HPWR-6502 HPWR-6503 HPWR-6504 IRF122 IRF223 IRF340 IRF441 VN4001A
Text: MOSPOWER Cross Reference List MOSPOWER Cross Reference List HEWLETT-PACKARD Industry Part No. HPWR-6501 HPWR-6502 HPWR-6503 HPWR-6504 BVd s S Volts rDS(on) (Ohms) Package 450 400 450 400 0.85 0.74 1.0 1.0 TO-3 TO -3 TO-3 TO-3 100 120 140 160 180 200 160
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OCR Scan
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PWR-6501
IRF441
HPWR-6502
IRF340
HPWR-6503
HPWR-6504
VN4001A
2SK132
IRF122
2SK133
IRF223
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PDF
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irf 80 n
Abstract: irf 30A IRF340 IRF350 IRF440 IRF450 IRF740 IRF820 IRF840 VNP002A
Text: Ü Ü A C D ^ U /C D M i v i a D r /\W i iv iv ^ i v T T k iv r i i i i i v t iv u v iw i C A lA A ^ /\r f^ .n \M é g ^ i^ v iv i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING I i Packages: BV qss Volts 4 5 0 -5 0 0 TO-3 TO-220 S ilic o n ix
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OCR Scan
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O-220
O-237
O-202
IRF450
IRF840
IRF440
VN5001D/IRF830
VNP002A*
IRF820
VN5001A/IRF430
irf 80 n
irf 30A
IRF340
IRF350
IRF740
VNP002A
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PDF
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irf 111
Abstract: IRF420 IRF422 IRF430 IRF432 IRF440 IRF442 IRF450 IRF452 VN5001A
Text: !R Selector Guide ] MOSPOWER Selector Guide B Siliconix N-Channel MOSPOWER Device u TO-3 Breakdown Voltage Volts 500 500 500 500 500 500 500 500 500 500 500 450 450 450 450 450 450 450 450 450 450 450 400 400 400 400 400 400 400 400 400 400 400 350 350 350
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OCR Scan
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IRF450
IRF452
IRF440
IRF442
VNP002A*
VN5001A
IRF430
VN5002A
IRF432
IRF420
irf 111
IRF420
IRF422
IRF430
IRF432
IRF440
IRF442
IRF450
IRF452
VN5001A
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PDF
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D0217
Abstract: IRFP 620 IRF622 application FZJ 111 irf 44 n FZJ 101 transistor irf620 pj62 IRF620 IRF621
Text: 3GE » • 7^23? 002=1703 1 ■ ' T v3P|- [ S G S -T H O M S O N * 7 # [ * œ Œ ( g r a [ i * § r= IR F 6 2 0 / F I - 6 2 1 /F I IR F 6 2 2 / F I - 6 2 3 /F I Z S G S-thomJoF TYPE N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V DSS 200 V 200 V ^DS(on
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OCR Scan
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620/FI-621/FI
622/FI-623/FI
IRF620
IRF620FI
IRF621
IRF621FI
IRF622
IRF622FI
IRF623
IRF623FI
D0217
IRFP 620
IRF622 application
FZJ 111
irf 44 n
FZJ 101
transistor irf620
pj62
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PDF
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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OCR Scan
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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PDF
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