Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IRFIZ46N Search Results

    SF Impression Pixel

    IRFIZ46N Price and Stock

    Infineon Technologies AG IRFIZ46N

    MOSFET N-CH 55V 33A TO220AB FP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFIZ46N Tube 50
    • 1 -
    • 10 -
    • 100 $1.8806
    • 1000 $1.8806
    • 10000 $1.8806
    Buy Now

    Infineon Technologies AG IRFIZ46NPBF

    MOSFET N-CH 55V 33A TO220AB FP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFIZ46NPBF Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    International Rectifier IRFIZ46N

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IRFIZ46N 50
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    IRFIZ46N Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFIZ46N International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package; A IRFIZ46N with Standard Packaging Original PDF
    IRFIZ46N International Rectifier HEXFET Power MOSFET Original PDF
    IRFIZ46N Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFIZ46N International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 55V, 31A, Pkg Iso TO-220 Fullpak Scan PDF
    IRFIZ46NPBF International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package; Similar to IRFIZ46N with Lead Free Packaging Original PDF
    IRFIZ46NPBF International Rectifier Original PDF

    IRFIZ46N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFZ46N equivalent

    Abstract: IRFZ46N
    Text: PD - 95595 IRFIZ46NPbF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 0.020Ω G Description Fifth Generation HEXFETs from International Rectifier


    Original
    PDF IRFIZ46NPbF O-220 I840G IRFZ46N equivalent IRFZ46N

    IRFI840G

    Abstract: IRFIZ46N IRFZ46N IRFZ46N equivalent
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1306B IRFIZ46N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated VDSS = 55V RDS on = 0.020Ω


    Original
    PDF 1306B IRFIZ46N O-220 IRFI840G IRFIZ46N IRFZ46N IRFZ46N equivalent

    IRFIZ46N

    Abstract: IRFZ46N IRFZ46N equivalent irf 480 IRF 1040
    Text: PD - 9.1306A IRFIZ46N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.020Ω G Description Fifth Generation HEXFETs from International Rectifier


    Original
    PDF IRFIZ46N O-220 IRFIZ46N IRFZ46N IRFZ46N equivalent irf 480 IRF 1040

    IRFIZ46N

    Abstract: IRFZ46N MOSFET IRF 630 IRFZ46N equivalent
    Text: PD - 9.1306A IRFIZ46N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.020Ω G Description Fifth Generation HEXFETs from International Rectifier


    Original
    PDF IRFIZ46N O-220 IRFIZ46N IRFZ46N MOSFET IRF 630 IRFZ46N equivalent

    IRFZ46N equivalent

    Abstract: IRFZ46N equivalent irfz46n
    Text: PD - 95595 IRFIZ46NPbF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 0.020Ω G Description Fifth Generation HEXFETs from International Rectifier


    Original
    PDF IRFIZ46NPbF O-220 I840G IRFZ46N equivalent IRFZ46N equivalent irfz46n

    Untitled

    Abstract: No abstract text available
    Text: PD - 95595 IRFIZ46NPbF l l l l l l HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free D VDSS = 55V RDS on = 0.020Ω G Description Fifth Generation HEXFETs from International Rectifier


    Original
    PDF IRFIZ46NPbF O-220 I840G

    sumida 94V-0

    Abstract: inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET
    Text: International Rectifier The IGBT SIP & HEXPak Navigator Effective 8 September, EXISTING Products NEW Products UPCOMING Products POTENTIAL Products released to production in last 6-9 months to be released within next 3-4 months no current plans. see bus.mgmt.


    Original
    PDF IRFK2D054 IRFK2F054 CPV362M4U CPV363M4U CPV364M4U CPV362M4F CPV363M4F CPV364M4F CPV362M4K CPV363M4K sumida 94V-0 inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET

    IRGKI165F06

    Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
    Text: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)


    Original
    PDF OT-23) IRLML2402* IRLML2803 IRLML5103 IRLML6302* IRGKI165F06 IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103

    irf510 switch

    Abstract: IRFBA40N60C 800v irf IRL2505 IRF634L IRF540NL IRF520N IRFU9024N IRFU3910 IRL3215
    Text: International Rectifier The HEXFET Through Hole Navigator COLOR CODING: EXISTING Products NEW Products released to production in last 6-9 months UPCOMING Products to be released within next 3-4 months POTENTIAL Products no current plans. see bus.mgmt.


    Original
    PDF O-262 O-220 IRL3302 IRL3202 IRL3102 IRL3402 IRL3502 Super220TM O-247 irf510 switch IRFBA40N60C 800v irf IRL2505 IRF634L IRF540NL IRF520N IRFU9024N IRFU3910 IRL3215

    irf1010e equivalent

    Abstract: irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent
    Text: International Rectifier MOSFETs MOSFETs Continued HEXFETª Power MOSFETs Ñ TO-220AB (continued) N-Channel (continued) Mfr.Õs Type IRFZ24N* IRF1010E* IRFZ44E* IRFZ34E* IRFZ14* IRF2807* IRF3710* IRF1310N* IRF540N* IRF530N* IRF520N* IRF510* IRF3415* IRF640N


    Original
    PDF O-220AB O-220 IRFZ24N* IRFIZ24N IRFD024 IRF1010E* IRFI1310N IRFD014 IRFZ44E* IRFI540N irf1010e equivalent irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original
    PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original
    PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original
    PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    IRFBE30 equivalent

    Abstract: irf9640 REPLACEMENT GUIDE IRGKI200F06 IRGP440U replacement IRF3205 smd IRGBC20FD2 IRFK3D450 IRFBg30 equivalent IRGNIN150M06 irc540
    Text: Electronic Switches Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  HEXFET Power MOSFETs Description Gen Package Document # Pages Date 11 10 12 7 May-97 May-97 91615 91650 91651 90454 90592 90565 90566


    Original
    PDF May-97 Sep-95 Sep-94 IRFBE30 equivalent irf9640 REPLACEMENT GUIDE IRGKI200F06 IRGP440U replacement IRF3205 smd IRGBC20FD2 IRFK3D450 IRFBg30 equivalent IRGNIN150M06 irc540

    9137

    Abstract: surface mount IRFZ44N IRFK3D450 IRFK4H054 IRLI640G IRFBg30 equivalent hexfet power mosfets international rectifier IRFP260 IRC540 equivalent irf 3250
    Text: HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) Rθ A Max Thermal Resistance (°C/W) P Max.


    Original
    PDF OT-23) IRLML2402* IRLML2803 IRLML5103 IRLML6302* IRFK3DC50 IRFK3F150 O-240AA IRFK3F250 IRFK3F350 9137 surface mount IRFZ44N IRFK3D450 IRFK4H054 IRLI640G IRFBg30 equivalent hexfet power mosfets international rectifier IRFP260 IRC540 equivalent irf 3250

    IRF1010E

    Abstract: irf 4110 irfbf30 IRFPF50 irf7333 IRFP044N IRF4905 equivalent Irf520N IRFD110 IRF7606
    Text: HEXFET Power MOSFETs www.irf.com ID ID V BR DSS Continuous RΘ PD Drain-to-Source R DS(on) Continuous On-State Drain Current Drain Current Max. Thermal Max. Power Breakdown 70° Part Resistance Voltage Resistance 1 Dissipation 1 25°C (A) (V) (Ω ) (°C/W)


    Original
    PDF IRLML2402* IRLML2803 IRLML6302* IRLML5103 IRL3303L IRL3103L IRL2203NL IRL3803L IRLZ24NL IRLZ34NL IRF1010E irf 4110 irfbf30 IRFPF50 irf7333 IRFP044N IRF4905 equivalent Irf520N IRFD110 IRF7606

    IRF734

    Abstract: irf9640 REPLACEMENT GUIDE IRF3205 smd IRGTI165F06 irg4pc50fd *g4pc50w IRGKI115U06 IRGTI200F06 *gBC20f IRLIZ34
    Text: Electronic Switches Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 HEXFET Power MOSFETs Description Gen Package Document # Pages Date 11 10 12 7 May-97 May-97 91615 91650 91651 90454 90592 90565 90566


    Original
    PDF FA38SA50LC OT-227 FA57SA50LC FB180SA10 IRC530 O-220 IRC540 IRF734 irf9640 REPLACEMENT GUIDE IRF3205 smd IRGTI165F06 irg4pc50fd *g4pc50w IRGKI115U06 IRGTI200F06 *gBC20f IRLIZ34

    IRFZ46N equivalent

    Abstract: IOR 451 equivalent irfz46n
    Text: PD - 9.1306A International 3BR Rectifier IRFIZ46N HEXFET Power MOSFET • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS <S> • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated V dss = 55^ R d S oh = 0.020Í2


    OCR Scan
    PDF O-220 IRFZ46N equivalent IOR 451 equivalent irfz46n

    IRFZ46N equivalent

    Abstract: equivalent irfz46n
    Text: PD-9.1306A International IQ R Rectifier IRFIZ46N HEXFET Power MOSFET • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated Voss = 55V ^ D S o n = 0.020Î2


    OCR Scan
    PDF IRFIZ46N O-220 IRFZ46N equivalent equivalent irfz46n

    Untitled

    Abstract: No abstract text available
    Text: hternational I sr]Rectifier PD91306 IRFIZ46N preliminary HEXFET Power MOSFET • • • • • Advanced Process Technology Isolated Package High Voltage Isolation = 2.5K V R M S Sink to Lead Creepage Dist. = 4.8m m Fully Avalanche Rated Vdss = 55 V


    OCR Scan
    PDF IRFIZ46N Liguria49 QQ237Q1

    irf1644g

    Abstract: IRF1644 IRF1530N irf1530 IRFI3205 irf16 irfiz24n IRFI1310N
    Text: Internationa I IO R Rectifier HEXFET Power MOSFETs 1 'D V BR DSS D Continuous Drain-to-Source ^DS(on) PD R Continuous Drain Current On-State Dram Current Max. Thermal Max. Power inAO Breakdown 25oç 100 Part Resistance Resistance Dissipation Voltage (°C/W)


    OCR Scan
    PDF T0-220 IRFIZ24N IRFIZ34N IRFIZ44N IRFIZ46N IRFIZ48N RFII010N IRFI3205 IRFIZ24E IRFIZ34E irf1644g IRF1644 IRF1530N irf1530 irf16 IRFI1310N