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    IRF 450 MOSFET Search Results

    IRF 450 MOSFET Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    IRF 450 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFB4410ZPBF

    Abstract: Sl4410 AN-994 mosfet irf 150
    Text: PD - 97278C IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S Benefits


    Original     		PDF 97278C IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF O-220AB O-262 EIA-418. IRFB4410ZPBF Sl4410 AN-994 mosfet irf 150

    SL4410

    Abstract: No abstract text available
    Text: PD - 97278D IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S Benefits


    Original     		PDF 97278D IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF O-220AB O-262 EIA-418. SL4410

    irf 48v mosfet

    Abstract: AN-994 IRFB4410ZPBF
    Text: PD - 97278D IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S Benefits


    Original     		PDF 97278D IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF O-220AB O-262 EIA-418. irf 48v mosfet AN-994 IRFB4410ZPBF

    AN-994

    Abstract: No abstract text available
    Text: PD - 97278B IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S Benefits


    Original     		PDF 97278B IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF O-220AB O-262 Maximum73) AN-994

    MOSFET IRF 941

    Abstract: No abstract text available
    Text: PD - 97278A IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S Benefits


    Original     		PDF 7278A IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF O-220AB O-262 EIA-418. MOSFET IRF 941

    IRF 450 MOSFET

    Abstract: AN-994 IRFB4410Z IRFB4410ZPBF irfs4410z marking 58A
    Text: PD - 97278 IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits VDSS RDS on typ.


    Original     		PDF IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF O-220AB O-262 EIA-418. IRF 450 MOSFET AN-994 IRFB4410Z IRFB4410ZPBF irfs4410z marking 58A

    TO-247AC Package

    Abstract: IRFP064V irf 2030
    Text: PD - 94112 IRFP064V HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description l D VDSS = 60V l RDS on = 5.5mΩ


    Original     		PDF IRFP064V O-247 TO-247AC Package IRFP064V irf 2030

    irf 2030 n

    Abstract: irf 2030 IRF 545 IRFP064V
    Text: PD - 94112 IRFP064V HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description l D VDSS = 60V l RDS on = 5.5mΩ


    Original     		PDF IRFP064V O-247 O-247AC irf 2030 n irf 2030 IRF 545 IRFP064V

    IRF 042

    Abstract: irf 540 mosfet IRL3803 IRLI3803
    Text: PD - 9.1320B IRLI3803 HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D


    Original     		PDF 1320B IRLI3803 O-220 IRF 042 irf 540 mosfet IRL3803 IRLI3803

    IRFIZ46N

    Abstract: IRFZ46N MOSFET IRF 630 IRFZ46N equivalent
    Text: PD - 9.1306A IRFIZ46N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.020Ω G Description Fifth Generation HEXFETs from International Rectifier


    Original     		PDF IRFIZ46N O-220 IRFIZ46N IRFZ46N MOSFET IRF 630 IRFZ46N equivalent

    MOSFET IRF 570

    Abstract: 40V 14A DPAK 950.83
    Text: PD- 95083 IRLR/U2703PbF l l l l l l l l Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount IRLR2703 Straight Lead (IRLU2703) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 30V RDS(on) = 0.045Ω


    Original     		PDF IRLR/U2703PbF IRLR2703) IRLU2703) O-252AA) EIA-481 EIA-541. EIA-481. MOSFET IRF 570 40V 14A DPAK 950.83

    IRFIZ46N

    Abstract: IRFZ46N IRFZ46N equivalent irf 480 IRF 1040
    Text: PD - 9.1306A IRFIZ46N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.020Ω G Description Fifth Generation HEXFETs from International Rectifier


    Original     		PDF IRFIZ46N O-220 IRFIZ46N IRFZ46N IRFZ46N equivalent irf 480 IRF 1040

    IRF 850 mosfet

    Abstract: MOSFET IRF 635 MOSFET IRF 630 MOSFET IRF 713 IRF N-Channel Power MOSFETs IRF 740 N IRF 840 MOSFET IRF 450 MOSFET P Channel Power MOSFET IRF irf 540 mosfet
    Text: FUNCTION GUIDE POWER MOSFETs N-CHANNEL MOSFET TO-220 Vos Id 50 60 80 100 120 150 180 200 2 2.5 350 IRF IRF 713 712 IRF IRF IRF 711 710 1.3 1.5 250 400 450 500 550 600 700 800 850 900 IRF IRF IRF IRF IRF SS P SSP 613 612 614 823 822 2N85 2N90 IRF IRF IRF IRF


    OCR Scan     		PDF O-220 IR9523 IRF9522 IRF9513 IRF9511 IRF9512 IRF9510 IRF9623 IRF9621 IRF9622 IRF 850 mosfet MOSFET IRF 635 MOSFET IRF 630 MOSFET IRF 713 IRF N-Channel Power MOSFETs IRF 740 N IRF 840 MOSFET IRF 450 MOSFET P Channel Power MOSFET IRF irf 540 mosfet

    IRF9120

    Abstract: IRFP9120 IRF9120 mosfet IRF9121 IRF 9520 IRF 9120 IRF912213 IRF 9122 IRF9520 IRFP9121
    Text: IRF9120/912110122/9123 « IRFP9120/9121 /9122/9123: IRF9520/9521 /9Ö22/9523 •. P-CHANNEL POWER MOSFETS P r e l i m i n a r y Sn&nifinatinncì Tfi DE 7 clfc>41Lt2 D0054DE 1 | ” uuv/i öUmiviAKY •y*' 3 ^ SAMSUNG SEM ICO ND UC TOR INC -1 0 0 volt, 0.60 Ohm SFET


    OCR Scan     		PDF IRF9120/912110122/9123 IRFP9120/9121 IRF9520/9521 D0054DE IRF/IRFP9120, IRF9520 IRF/IRFP9121, IRF9521 IRF/IRFP9122, IRF9522 IRF9120 IRFP9120 IRF9120 mosfet IRF9121 IRF 9520 IRF 9120 IRF912213 IRF 9122 IRFP9121

    F230

    Abstract: IRFF230 IRFF231
    Text: FUT FIELD EFFECT POWER TRANSISTOR IRFF230.231 5.5 AMPERES 200,150 VOLTS RDS ON = 0.4 il Prelim inary This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes G E’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


    OCR Scan     		PDF -IRFF231 F230 IRFF230 IRFF231

    1RFP9240

    Abstract: irfp 9640 1RF9540 l 9143 1rfp9140 L 9141 1RF9240 IRF 409 IRFP9I40 IRF95XX
    Text: '"7964142 S A M S U N G SEM_ICONDUCTO ,> ." IRF9130/9131/9132/9133 T " IRFP9130/9131 /9132/9133 IRF9530/9531Z9532/9533 <*I b 4 1 4 d UUU54Ü5 _ ' P-CHANNEL Preliminary Specifications DE 1 7 ^ 4 1 4 2 - 1 0 0 Volt, 0.30 Ohm SFET PRODUCT SUMMARY 0D05405 ? Part Number


    OCR Scan     		PDF IRF9130/9131/9132/9133 IRFP9130/9131 IRF9530/9531Z9532/9533 UUU54DS 7Tti4145 IRF/IRFP9130, IRF9530 -100V IRF/IRFP9131, IRF9531 1RFP9240 irfp 9640 1RF9540 l 9143 1rfp9140 L 9141 1RF9240 IRF 409 IRFP9I40 IRF95XX

    4N50

    Abstract: IRF830 irf4321 MTP4N45 IRF430 IRF 5054 MTP4N50 MTM4N50 MK48Z02B-20 IRF431
    Text: FAIRCHILD SEMICONDUCTOR A4 DE I 34L.TL7L} D O a ? i n IRF430-433/IRF830-833 M TM /M TP4N45/4N50 N-Channel Power MOSFETs, 4.5 A, 450 V /500 V FA IR C H ILD B H O H B H B A Schlumberger Company Power And Discrete Division Description T—39—11 TO-204AA TO-22QAB


    OCR Scan     		PDF 34tclt 0e7117 IRF430-433/IRF830-833 MTM/MTP4N45/4N50 t-39-11 O-22QAB IRF430 IRF431 IRF432 IRF433 4N50 IRF830 irf4321 MTP4N45 IRF430 IRF 5054 MTP4N50 MTM4N50 MK48Z02B-20 IRF431

    irf4321

    Abstract: 4N50 MTM4N50 IRF830 MTP4N50 irf4304 IRF432 IRF430 IRF431 IRF433
    Text: A4 FAIRCHILD SEMICONDUCTOR IRF430-433/IRF830-833 M TM /M TP4N45/4N50 N-Channel Power MOSFETs, 4.5 A, 450 V /500 V FA IR C H ILD mamm am mam i DE J 341T a7 M O D E T i n 1 h A Schlumberger Company Power And Discrete Division Description T-39-11 TO-204AA TO-22QAB


    OCR Scan     		PDF IRF430-433/IRF830-833 MTM/MTP4N45/4N50 T-39-11 O-204AA O-22QAB IRF430 IRF431 IRF432 IRF433 MTM4N45 irf4321 4N50 MTM4N50 IRF830 MTP4N50 irf4304 IRF432 IRF430 IRF431 IRF433

    irf440

    Abstract: No abstract text available
    Text: IOR IRF Series Devices IRF Series Data Sheet T h e IR F D a ta S h e e t d e s c rib e s 32 d e v ic e s , 28 N -C h a n n e l a n d 4 P -C h a n n e l, a ll c o n ta in e d in th e T O -2 Û 4 A A o r T 0 - 2 0 4 A E p a c k a g e . T h is d a ta s h e e t


    OCR Scan     		PDF IRF9140 IRF9230 IRF9240 irf440

    IRF450R

    Abstract: F450 RF-45
    Text: £S HARRIS IR f 4 5 0 /4 5 1 /4 5 2 /4 5 3 IR F 4 5 0 R /4 5 1 R /4 5 2 R /4 5 3 R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u st 1991 Package Features T O -2 0 4 A A • 11A and 13A, 450V - 500V • ros on = 0 .4 i! and 0 .5 fi • Single Pulse Avalanche Energy Rated*


    OCR Scan     		PDF IRF450, IRF451, IRF452, IRF453 IRF450R, IRF451R, IRF452R IRF453R RE14b. IRF450R F450 RF-45

    IRF series

    Abstract: for driver circuit for mosfet IRF240 IRF350 MOSFET driver IRF 543 MOSFET irf460 IRF 870 aK 9AA diode IRF450A irf150 compliment alps 83 7n
    Text: IOR IRF Series Devices IRF Series Data Sheet a lp h a -n u m e ric order. W h e re the inform ation is d e v ic e spe c ific, w e h av e a s s ig n ed a num eric c h a ra cte r for the graph and an alph a c h a ra cte r to a given d evice. S e e T a b le A below . W h e re graphs


    OCR Scan     		PDF

    f840

    Abstract: IRF842R
    Text: 3 H A R R IS IR F840/841/842/843 IRF840R/841R/842R/843R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T 0 -2 2 0 A B • 7A and 8A, 450V - 500V TOP VIEW • rDs on) = 0 .8 5H and 1.1 fl DRAIN (FLANGE) • Single Pulse Avalanche Energy Rated*


    OCR Scan     		PDF F840/841/8 IRF840R/841R/842R/843R IRF840, IRF841, IRF842, IRF843 IRF840R, IRF841R, IRF842R IRF843R f840

    IRF820

    Abstract: P Channel Power MOSFET IRF IRF 511 MOSfet IRF P CHANNEL MOSFET IRF821 R 823 motorola IRF n CHANNEL MOSFET
    Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA IRF820 IRF821 IRF823 P o w er Field E ffe c t T ran sisto r N -Channel Enhancem ent-M ode S ilico n G ate TM O S These TM O S Power FETs are designed for high voltage, high speed power switching applications such as sw itching regulators, converters, solenoid


    OCR Scan     		PDF IRF820 IRF821 IRF823 Gate-SourcF821, IRF823 IRF820 IRF820, P Channel Power MOSFET IRF IRF 511 MOSfet IRF P CHANNEL MOSFET R 823 motorola IRF n CHANNEL MOSFET

    IRF830

    Abstract: IRF 450 MOSFET IRF831 LG diode 831 transistor irf830 TRANSISTOR mosfet IRF830
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF830 IRF831 IRF832 IRF833 Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate TMOS These TM O S Power FETs are designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid


    OCR Scan     		PDF IRF830 IRF831 IRF832 IRF833 IRF831. IRF 450 MOSFET LG diode 831 transistor irf830 TRANSISTOR mosfet IRF830