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    IRF 418 Search Results

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    HF Reader Antenna Matching

    Abstract: TRIMMER capacitor 5-60 pF atmel rfid reader schematic GRM1885C1H330GA01 GRM1555C1H102GA01 rfid reader schematic GRM1555C1H270GZ01 AT88RF1354 GRM1885C1H5R6B TZ03Z500F169B00
    Text: High Frequency RFID Reader Antenna Matching 1. Introduction A high frequency reader system's magnetic field is used for tag power and communication. One factor determining the magnetic field's size and strength is antenna current. Increasing antenna current increases the


    Original     		PDF AT88RF1354 HF Reader Antenna Matching TRIMMER capacitor 5-60 pF atmel rfid reader schematic GRM1885C1H330GA01 GRM1555C1H102GA01 rfid reader schematic GRM1555C1H270GZ01 GRM1885C1H5R6B TZ03Z500F169B00

    samco-i inverter manual

    Abstract: samco-i inverter diagram IRF power mosfets catalog IRF TRANSISTOR SUBSTITUTION SAMCO-vm05 5kw inverter circuit diagram samco-i manual 400W sine wave inverter circuit diagram samco-i inverter 1.5kw 500 kva inverter diagrams
    Text: NEW-CONCEPT TOP-CLASS INVERTERS FEATURING COMPACT DESIGN & LIGHT WEIGHT Actual Size SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Birth of the new SAMCO-e Series of inverters that offer outstanding operability and multiple functions in a compact body


    Original     		PDF k1-V11EA1-0603020ND samco-i inverter manual samco-i inverter diagram IRF power mosfets catalog IRF TRANSISTOR SUBSTITUTION SAMCO-vm05 5kw inverter circuit diagram samco-i manual 400W sine wave inverter circuit diagram samco-i inverter 1.5kw 500 kva inverter diagrams

    IRF3205 equivalent

    Abstract: IRF 9732 IRFz44n equivalent IRF3710 equivalent IRF4905 equivalent IRC540 equivalent irf 9450 IRF 9734 IRF5305 equivalent irf 9740
    Text: 4.1.1 HIGH TEMPERATURE REVERSE BIAS HTRB HEXFET GENERATION 3, TO-220/D2PAK PACKAGE Junction Temperature: Tj = +150°C or 175°C, as indicated Applied Bias: Vg = Vs = 0V; Vd = 100% of maximum rated Bvdss up to 500V then 80% of maximum rated Bvdss Equivalent Dev. Test


    Original     		PDF O-220/D2PAK IRF9630 IRF9510L IRF9520 IRF9510 IRF9Z14 IRF9Z34 IRCZ34 IRCZ44 IRC540 IRF3205 equivalent IRF 9732 IRFz44n equivalent IRF3710 equivalent IRF4905 equivalent IRC540 equivalent irf 9450 IRF 9734 IRF5305 equivalent irf 9740

    siemens mccb

    Abstract: MOSFET IRF 1018 MOSFET IRF 630 samco MOSFET IRF 713 SAMCO-vm05 cd632 SAMCO-e MOSFET IRF 603 samco-i
    Text: トップクラスの小形軽量を実現した ニューコンセプトインバータ 原寸大 抜群の操作性と多機能をコンパクトなボディに凝縮 新時代のインバータ シリーズ誕生。 業界トップクラスの小形・軽量・省スペースを実現した汎用インバータ シリーズの誕生です。


    Original     		PDF RS485 400Hz 420mA ISO9001/14001 k1-V11JA0-0404030ND siemens mccb MOSFET IRF 1018 MOSFET IRF 630 samco MOSFET IRF 713 SAMCO-vm05 cd632 SAMCO-e MOSFET IRF 603 samco-i

    IRFIBC44LC

    Abstract: MOSFET IRF 3710 transistor IRFZ46N irf2807 equivalent IRFIBC44 TO-220 IRF 3615 irfz46n irf 3215 mosfet irf 9740 transistor equivalent irf510
    Text: SWITCH RELIABILITY REPORT QUARTERLY REPORT NUMBER 57 OCTOBER 15, 1999 International Rectifier WORLD HEADQUARTERS: 233 KANSAS ST., EL SEGUNDO, CA 90245 USA • Tel: 310 322-3332 • TELEX 66-4464 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, UK • Tel: (44) 0883 714234 • TELEX 95219


    Original     		PDF

    diode 838

    Abstract: ST 7702 irf 439
    Text: PD - 94001 IRF7705 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel VDSS RDS(on) max ID -30V 18mΩ@VGS = -10V 30mΩ@VGS = -4.5V -8.0A -6.0A Description HEXFET® power MOSFETs from International Rectifier


    Original     		PDF IRF7705 diode 838 ST 7702 irf 439

    transistor tt 2170

    Abstract: hudi HD64F2170 Nippon capacitors
    Text: REJ09B0149-0200Z The revision list can be viewed directly by cliking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 16 H8S/2172Group Hardware Manual


    Original     		PDF REJ09B0149-0200Z H8S/2172Group 16-Bit Family/H8S/2100 H8S/2170 HD64F2170 D-85622 H8S/2172 transistor tt 2170 hudi HD64F2170 Nippon capacitors

    1RFP9240

    Abstract: irfp 9640 1RF9540 l 9143 1rfp9140 L 9141 1RF9240 IRF 409 IRFP9I40 IRF95XX
    Text: '"7964142 S A M S U N G SEM_ICONDUCTO ,> ." IRF9130/9131/9132/9133 T " IRFP9130/9131 /9132/9133 IRF9530/9531Z9532/9533 <*I b 4 1 4 d UUU54Ü5 _ ' P-CHANNEL Preliminary Specifications DE 1 7 ^ 4 1 4 2 - 1 0 0 Volt, 0.30 Ohm SFET PRODUCT SUMMARY 0D05405 ? Part Number


    OCR Scan     		PDF IRF9130/9131/9132/9133 IRFP9130/9131 IRF9530/9531Z9532/9533 UUU54DS 7Tti4145 IRF/IRFP9130, IRF9530 -100V IRF/IRFP9131, IRF9531 1RFP9240 irfp 9640 1RF9540 l 9143 1rfp9140 L 9141 1RF9240 IRF 409 IRFP9I40 IRF95XX

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    diode 9232

    Abstract: 1RF9630 IRFP9230 irf963 IRF9632 IRF9630 9232
    Text: F LÌI IRF9230/9231Z9232/9233 ^ ÏRFP9230/9231 /9232/923Ä IRF9630/9631/9632/9633 DE I 7^4145 D0QS417 3 | p -c h a n n e l POWER MOSFETS Preliminary Specifications PRODUCT SUMMARY -2 0 0 Volt, 0.8 Ohm SFET 7964142 SAMSUNG SEM ICONDUCTOR Part Number Vos RoS on


    OCR Scan     		PDF IRF9230/9231Z9232/9233 RFP9230/9231 IRF9630/9631/9632/9633 D0QS417 IRF/IRFP9230, IRF9630 IRF/IRFP9231, IRF963 IRF/IRFP9232, IRF9632 diode 9232 1RF9630 IRFP9230 9232

    transistor BC 157

    Abstract: TRANSISTOR BC 181 BC181 transistor 2sc 1586 transistor BC SERIES TRANSISTOR "BC 157" TRANSISTOR BC 650 c BC transistor series Siemens a35 BC161-10
    Text: ESC D • û235bOS 0004100 T « S I E â ^ . .-r-M-âZ- PNP Silicon Transistors SIEMENS AKTIENGESELLSCHAF BC160 BC 161 BC 160 and BC 161 are epitaxial PNP silicon transistors in TO 39 case 5 C 3 DIN 41873 . The collector is electrically connected to the case. The transistors are intended for use as


    OCR Scan     		PDF BC160 BC160' 160/BC140 BC161/BC141 8C161 transistor BC 157 TRANSISTOR BC 181 BC181 transistor 2sc 1586 transistor BC SERIES TRANSISTOR "BC 157" TRANSISTOR BC 650 c BC transistor series Siemens a35 BC161-10

    TRANSISTOR BC 157

    Abstract: BC181 transistor bc160 TRANSISTOR "BC 157" transistor 2sc 1586 transistor BC 55 transistor BC SERIES f15n transistor bc 102 BC161 transistor
    Text: 2SC D • û23SbOS 0004100 T_«SIE<S^ PNP Silicon Transistors SIEMENS . AKTIENGESELLSCHAF B c160 BC 161 BC 160 and BC 161 are epitaxial PNP silicon transistors in TO 39 case 5 C 3 DIN 41873 . The collector is electrically connected to the case. The transistors are intended for use as


    OCR Scan     		PDF 23SbOS BC160 Q62702-C228 Q62702-C228-V6 Q62702-C228-V10 Q62702-C228-V16 Q62702-C228-P 160/BC140 Q62702-C228-S2 BC1611> TRANSISTOR BC 157 BC181 transistor bc160 TRANSISTOR "BC 157" transistor 2sc 1586 transistor BC 55 transistor BC SERIES f15n transistor bc 102 BC161 transistor

    BC 247 b transistor

    Abstract: C558B transistor BC 247 transistor BC 245 bc 558 equivalent bc560 bc556b equivalent BC 247 Transistor - BC 547, CL 100 transistor 557 b
    Text: - 25C D • Ô235b05 O O O m ^ b □ H S I E 6 - Q PNPSiliconTransistors B C 5 5 6 -B C 5 6 0 ' SIEMENS AKTIENGESELLSCHAF- 2 % - 2 . 1 for AF input and driver stages BC 556, BC 557, BC 558, BC 559, and BC 560 are epitaxial PNP silicon Planartransistors in


    OCR Scan     		PDF 235b05 BC556' BC556VI BC556A BC556B BC5571 BC557VI BC557A BC557B BC5581 BC 247 b transistor C558B transistor BC 247 transistor BC 245 bc 558 equivalent bc560 bc556b equivalent BC 247 Transistor - BC 547, CL 100 transistor 557 b

    k 151 transistor

    Abstract: transistor ac 151 AC161 AC151 transistor AC151 Q60103-X151-D Q60103-X151-D1 Q60103-X151-E Q60103-X151-F Q60103-X151-F1
    Text: SSC T> m 0235bD5 0004035 ISI EG AC 151 AC 1 5 1 r PNP Germanium Transistors SIEMENS AKTIENúESELLSCHAF C 04035 T - 9 - / / Not for new design fo r AF inp u t and driver stages o f m e d iu m p erfo rm an ce AC 151 and AC 151 r are alloyed germanium PNP transistors in 1A 3 DIN 41871 case


    OCR Scan     		PDF 235bD5 Q60103-X151-D Q60103-X151-D1 Q60103-X151-E Q60103-X151 Q60103-X151-F Q60103-X151-F1 Q60103-X151-G Q62901-B1 AC161. k 151 transistor transistor ac 151 AC161 AC151 transistor AC151 Q60103-X151-D Q60103-X151-D1 Q60103-X151-E Q60103-X151-F Q60103-X151-F1

    TRANSISTOR D 2627

    Abstract: transistor D 2624 transistor k 2628 TRANSISTOR 1300 3B on 2518 transistor TCA 321 Telefunken Electronic 12A3 T0126 BU546
    Text: TELEFUNKEN ELECTRONIC 17E D • ÔSHDDTb DOQRMfi? ■ BU 546 TTtliLEHFtyJDiSSES&i} electronic Crwtivel«chooioo«s Silicon NPN Power Transistor Applications; Switching mode power supply Features: • In triple diffusion technique • Short switching time • High reverse voltage


    OCR Scan     		PDF r-33-13 T0126 15A3DIN TRANSISTOR D 2627 transistor D 2624 transistor k 2628 TRANSISTOR 1300 3B on 2518 transistor TCA 321 Telefunken Electronic 12A3 T0126 BU546

    transistor BUX 44

    Abstract: transistor BUX BUX87 bux86 transistor BF 414
    Text: A TELEFUNKEN ELECTRONIC 17E D • 0 ^ 2 0 0 % OOb'iST? ? ■ AL66 BUX 86 - BUX 87 TTIUIFy MKIM electronic Creative Tfechnotog* * T - 2 3 - D 9 Silicon NPN Power Transistors Applications: Switching mode power supply, driver circuits Features: • in multi diffusion technique


    OCR Scan     		PDF 15A3DI transistor BUX 44 transistor BUX BUX87 bux86 transistor BF 414

    aot 1106

    Abstract: transistor bc 209 npn transistor BC 209 transistor BUX bux 84 MARKING BUX AL6 marking BF 212 transistor telefunken ta 400
    Text: TELEFUNKEN ELECTRONIC 17E D • fi'iSOO'Jb O D O IS ia ■ ALGG BUX 84 • BUX 85 Silicon NPN Power Transistors r - 3 3 - ii ! Applications: Switching mode power supply Features: • Short switching times • Power dissipation 40 W • In multi diffusion technique


    OCR Scan     		PDF 15A3DIN aot 1106 transistor bc 209 npn transistor BC 209 transistor BUX bux 84 MARKING BUX AL6 marking BF 212 transistor telefunken ta 400

    Untitled

    Abstract: No abstract text available
    Text: 4 3 D5 2 7 1 0053003 TFT • SI HARRIS HAS IRF130/ 131/ 132/133 IRF130R/1 31 R /132R /133R N -C hannel Power MOSFETs Avalanche Energy Rated* May 1992 Package Features TO-2Q4AA • 12A and 14A, 80V - 100V • rDS on = 0 .1 6 fi and 0 .2 3 ft SOURCE • Single Pulse Avalanche Energy Rated*


    OCR Scan     		PDF IRF130/ IRF130R/1 /132R /133R IRF130, 1RF131, IRF132, IRF133 IRF130R, IRF131R,

    Untitled

    Abstract: No abstract text available
    Text: H A R R I S IR F 1 3 0 /1 3 1 /1 3 2 /1 3 3 IR F 1 3 0 R /1 3 1 R /1 3 2 R /1 3 3 R N -C hannel Power MOSFETs Avalanche Energy Rated* May 1992 Package Features TO-204AA • 12A and 14A, 80V - 100V • rDS{on = 0 .1 6 0 and 0.23Î2 DRAIN FLANGE) SOURCE


    OCR Scan     		PDF O-204AA IRF130, IRF131, IRF132, IRF130R, IRF131R, IRF132R, IRF133R FlGURE14b.

    e14B

    Abstract: IRF1401 141r IRF140
    Text: ¡ 2 H A R R IR F 14 0 / 1 4 1 / 1 4 2 / 1 4 3 I S IR F 1 40R /14 1 R /14 2 R /1 4 3 R A u g u st N-Channel Power MOSFETs Avalanche Energy Rated* 1991 Package Features TO -2Q 4AE • 28A and 25A, 80V - 100V • rDS on = 0 .0 7 7 i! and 0 .1 0 ii • Single Pulse Avalanche Energy Rated*


    OCR Scan     		PDF IRF140, IRF141, IRF142, IRF143 IRF140R, IRF141R, IRF142R, IRF143R e14B IRF1401 141r IRF140

    Untitled

    Abstract: No abstract text available
    Text: 4302571 00530^3 AMI • S] HARRIS HAS IRF15 0 /1 5 1 /1 5 2 /1 53 IRF15 OR/151R/152R/153R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features TO -2Q 4A E • 33A and 40A, 60V - 100V • r0S on = 0 .0 5 5 fl and 0 .0 8 il y SOURCE


    OCR Scan     		PDF IRF15 OR/151R/152R/153R IRF150, IRF151, IRF152, IRF153 IRF150R, IRF151R, IRF152R,

    circuits of IRF150

    Abstract: IRF150-152
    Text: HARRIS IBM50/151/152/153 IRF150R/151R/152R/153R N -Channel Power MOSFETs Avalanche Energy Rated* August 19 9 1 Package Features TO -2Q 4AE • 33A and 40A, 60V - 100V • rDS on = 0 .0 5 5 ÎÎ and 0 .0 8 fi DRAIN (FLANGE) y SOURCE • Single Pulse Avalanche Energy Rated*


    OCR Scan     		PDF IBM50/151/152/153 IRF150R/151R/152R/153R IRF150, IRF151, IRF152, IRF153 IRF150R, IRF151R, IRF152R, IRF153R circuits of IRF150 IRF150-152

    Untitled

    Abstract: No abstract text available
    Text: •4302571 0 0 5 3 0 0 0 Möl ■ £3 HARRIS HAS IRF140/141/14 2/143 IRF140R/141R/142R/143R N -C h a n n e l Pow er M OSFETs Avalanche Energy R ated* August 1991 Package Features T 0 -2 0 4 A E • 28A and 25A, 80V - 100V • rDS on = 0 .0 7 7 fi and 0 .1 0 fi


    OCR Scan     		PDF IRF140/141/14 IRF140R/141R/142R/143R IRF140, IRF141, IRF142, IRF143 IRF140R, IRF141R, IRF142R, IRF143R

    aeg B 17 V

    Abstract: T80F C-03 4T80 AEG T 25 N 1100 aeg t80f K/aeg B 17 V
    Text: 0029426 T 8 0 F A E G 81C CORP fil A E G C0RP 0 5 8 25 dF y J - DDDSflES D Typenreihe/Type range_ T80F_ Elektrische Eigenschaften Electrical properties Höchstzulässige Werte


    OCR Scan     		PDF 11PK/tltZF aeg B 17 V T80F C-03 4T80 AEG T 25 N 1100 aeg t80f K/aeg B 17 V