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    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


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    PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    1RF620

    Abstract: 1RF530 1rf521 1rf630 IRF449 RF543 irf362 IRF352 IRF353 IRF421
    Text: - 252 - Mi m *± « % Vds Vg s or * Vd g % 1RF35! IRF353 IR !R IR IRF360 IRF362 IRF420 IRF421 IRF422 IRF423 IRF430 IRF431 IRF432 IRF433 IRF440 IRF441 IRF442 IRF443 IRF448 IRF449 IRF450 IRF451 IRF452 IRF453 IRF460 IRF462 IRF510 IR IR IR IR IR IR IR IR IR IR


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    PDF Ta-25 IRF352 IRF353 IRF360 O-204AE IRF362 TQ-204AE IRF421 O-3150 O-204AA 1RF620 1RF530 1rf521 1rf630 IRF449 RF543 irf362 IRF352 IRF353 IRF421

    IRF411

    Abstract: IRF449 1RF540 irf413 1RF620 1rf520 irf362 IRF352 IRF353 IRF421
    Text: - 252 - Mi m *± « % Vds Vg s or * Vd g % 1RF35! IRF353 IR !R IR IRF360 IRF362 IRF420 IRF421 IRF422 IRF423 IRF430 IRF431 IRF432 IRF433 IRF440 IRF441 IRF442 IRF443 IRF448 IRF449 IRF450 IRF451 IRF452 IRF453 IRF460 IRF462 IRF510 IR IR IR IR IR IR IR IR IR IR


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    PDF Ta-25 IRF352 IRF353 IRF360 O-204AE IRF362 TQ-204AE IRF421 O-3150 O-204AA IRF411 IRF449 1RF540 irf413 1RF620 1rf520 irf362 IRF352 IRF353 IRF421

    1RF530

    Abstract: LA 4289 530-R
    Text: 33 H ARRIS IR F530/531/532/533 1RF530R/531R/532R/533R N-Channel Power MOSFETs Avalanche Energy Rated* May 1992 Package Features T 0 -2 2 0 A B TOP VIEW • 12A and 14A, 80V - 100V • rDs on = 0.160 and 0.23fl • Single Pulse Avalanche Energy Rated* DRAIN


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    PDF F530/531/532/533 1RF530R/531R IRF530, IRF531, IRF532, IRF533 IRF530R, IRF531R, IRF532R IRF533R 1RF530 LA 4289 530-R

    Cross Reference power MOSFET

    Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630
    Text: FAIRCH ILD Power Products Data Book FA IR C H ILD Power Data Book A S chlum berger C om pany 1 9 86/8 7 Power and Discrete Division 1986 Fairchild Semiconductor Corporation Power and Discrete Division 4300 Redwood Highway, San Rafael, CA 94903 415 479-8000 TWX 910-384-4258


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    PDF T0-204AA T0-204AE T0-220AB T0-220AC Cross Reference power MOSFET irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630

    1RF530

    Abstract: 1RF531 43D5571 IRF530R CGJ-1 irf530 harris IRF530 IRF531 IRF531R IRF532
    Text: • 430 2 27 1 0 0 5 3 ^ 3 J2 HARRIS 72T ■ HAS IR F 530/531/532/533 IRF530R/531R/532R/533R N -C hannel Power MOSFETs Avalanche Energy Rated* May 1992 Package Features T 0 -2 2 0 A B • 12A and 14A, 80V - 100V TOP VIEW • r o s ° n = 0 .1 6f2 and 0 .2 3 0


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    PDF 4305E71 IRF530/531/532/533 IRF530R/531R/532R/533R IRF530, IRF531, IRF532, IRF533 IRF530R, IRF531R, IRF532R 1RF530 1RF531 43D5571 IRF530R CGJ-1 irf530 harris IRF530 IRF531 IRF531R IRF532

    MTM13N50E

    Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
    Text: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”


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    PDF BUZ10 BUZ11 BUZ11A BUZ11S2 BUZ15 BUZ171 BUZ20 BUZ21 BUZ23 BUZ31 MTM13N50E P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E

    IRF510

    Abstract: irf540
    Text: _ THOnSON/ D I S TRIBUTOR 5fiE D • 105^573 0005705 35k ■ TCSK P o w er M O S FE T s IR F -S e rie s P o w e r M O S FE T s — N -C h a n n e l Package Maximum Ratings BV q s s V IDS (A) 'DS(O N) OHMS 60 0.40 0.50 0.80 1 1.1 1.3 3 3.50 3.50 4 5


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    PDF 4-PIn80 IRFD113 IRFD111 IRFD123 IRFD121 IRFF113 IRFF111 IRF513 IRF511 IRFF123 IRF510 irf540

    IRFD110

    Abstract: IRF5134 IRF120 IRF540 1RF542 IRF510 IRF522 IRF611-3 IRFD1Z3 IRF143
    Text: _ THOnSON/ D I S TRIBUTOR 5fiE D • 105^573 0005705 35k ■ TCSK P o w er M O S FE T s IR F -S e rie s P o w e r M O S FE T s — N -C h a n n e l Package Maximum Ratings BV q s s V IDS (A) 'DS(O N) OHMS 60 0.40 0.50 0.80 1 1.1 1.3 3 3.50 3.50 4 5


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    PDF O-247 O-204 O-205 O-220 IRFD113 IRFD111 IRFD123 IRFD121 IRFF113 IRFF111 IRFD110 IRF5134 IRF120 IRF540 1RF542 IRF510 IRF522 IRF611-3 IRFD1Z3 IRF143

    IRF530

    Abstract: IRF532 L10M IRF531 IRF533 J56-1 IRF530 mosfet
    Text: Standard Power MOSFETs- IRF530, IRF531, IRF532, IRF533 File Num ber 1575 Power MOS Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 12A and 14A, 60V-100V


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    PDF IRF530, IRF531, IRF532, IRF533 0V-100V IRF532 50V0SS IRF530 L10M IRF531 J56-1 IRF530 mosfet

    IRF413

    Abstract: 1RF530 IRF449 IRF460 RF543 samsung irf540 1RF540 1RF620 irf362 IRF448
    Text: - 244 - f ä! SD210 SD211 SD212 S0213 S02T4 SD215 SD211 SD219 BS107P BSI07PT BSUOF BS17ÜP DS250F BS250P 1RF 520 IRF521 IRF522 IRF523 IRF530 IRF531 IRF532 IRF533 IRF620 IRF621 IRF622 IRF623 IRF630 IRF631 1RF632 IRF633 € tt € CALOGIC CALOGIC CALOGIC CALOGIC


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    PDF Ta-2510) SD210 TD-12 SD211 SD212 S0213 O-220AB IRF630 IRF631 IRF413 1RF530 IRF449 IRF460 RF543 samsung irf540 1RF540 1RF620 irf362 IRF448

    1RF620

    Abstract: 1RF540 1RF630 1RF640 1RF530 1RF520 IRF625 RF543 BS250F BS107PT
    Text: - 244 - f ä! SD210 SD211 SD212 S0213 S02T4 SD215 SD211 SD219 BS107P BSI07PT BSUOF BS17ÜP DS250F BS250P 1RF 520 IRF521 IRF522 IRF523 IRF530 IRF531 IRF532 IRF533 IRF620 IRF621 IRF622 IRF623 IRF630 IRF631 1RF632 IRF633 € tt € CALOGIC CALOGIC CALOGIC CALOGIC


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    PDF Ta-2510) SD210 TD-12 SD211 SD212 S0213 O-220AB IRF630 IRF631 1RF620 1RF540 1RF630 1RF640 1RF530 1RF520 IRF625 RF543 BS250F BS107PT

    IRF530

    Abstract: IR IRF532 IRF531 1RF531 IRF532 ic l00a IRF530 mosfet IRF533
    Text: DE 1 3 a ? S ü f l l D01Û33T 4 01 3875081 G E SOLID STATE 01E Standard Power MOSFETs _ 18339 IRF530, IRF531, IRF532, IRF533 O T '3 7 *// File Number 1575 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors


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    PDF IRF530 1RF531, IRF532, IRF533 0V-100V' IRF530, IRF531, IRF532 IRF533 IR IRF532 IRF531 1RF531 ic l00a IRF530 mosfet

    IRF530

    Abstract: IR IRF532 IRF531 OF IRF530 TA17411 f531 RF1S540 RF1S540SM9A irf532 rf1s530sm
    Text: P *3 3 S IRF530, IRF531, IRF532, IRF533, RF1S530, RF1S530SM 12A and 14A, 80V and 100V, 0.16 and 0.23 Ohm, N-Channel Power MOSFETs juiy 1998 Features Description • 12A and 14A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate


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    PDF IRF530, IRF531, IRF532, IRF533, RF1S530, RF1S530SM IRF530 IR IRF532 IRF531 OF IRF530 TA17411 f531 RF1S540 RF1S540SM9A irf532 rf1s530sm

    RF530

    Abstract: 1RF530 irf532 IRF530 HEXFET TRANSISTORS irf531 IR IRF532 1RF531 TYN 058 IRF530 LIRF530
    Text: he o | qassqss 0000450 1 | Data Sheet No. PD-9.307N T-39-11 INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED* LOWER ON STATE RESISTANCE, 175°C OPERATING TEMPERATURE IRF530 IRF531 IRF532 IRF533Î HEXFET TRANSISTORS


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    PDF T-39-11 IRF530 IRF531 IRF532 IRF533Î O-220AB IRF530, IRF531, IRF532, IRF533 RF530 1RF530 IRF530 HEXFET TRANSISTORS IR IRF532 1RF531 TYN 058 LIRF530

    2CS-42724

    Abstract: RRF530 S33R IRF530R IRF531R IRF532R IRF533R TC. 12A MOSFET Drivers
    Text: _ Rugged Power MOSFETs File Number 1993 IRF530R, IRF531R, IRF532R, IRF533R Avalanche Energy Rated N-Channel Power MOSFETs 12A and 14A, 60V-100V rDs on = 0.18CÎ and 0 .2 5 0 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated


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    PDF IRF530R, IRF531R, IRF532R, IRF533R 0V-100V IRF532R IRF533R 2CS-42724 2CS-42724 RRF530 S33R IRF530R IRF531R TC. 12A MOSFET Drivers

    pj 69 diode

    Abstract: F533R IRF530 IRF
    Text: 2 HARRIS IRF530/531/532/533 IRF530R/531R/532R/533R N -C hannel Power MOSFETs Avalanche Energy Rated* ay 1992 Features • Package T0220AB 12A and 14A, 80V - 100V TO P VIEW • rDS °n = 0.16 fl and 0.23ft • Single Pulse Avalanche Energy Rated* DRAIN (F L A N G E )


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    PDF IRF530/531/532/533 IRF530R/531R/532R/533R T0220AB IRF530, IRF531, IRF532, IRF533 IRF530R, IRF531R, IRF532R pj 69 diode F533R IRF530 IRF

    1rf520

    Abstract: 1RF540 1RF620 1RF640 IRF510 RF523 IRF530 IRF532 IRF533 IRF541
    Text: - 253 £> tt £ f m * £ V Vd s Vg s € Id Pd Vg s th lo s s I gss or * V dg Hr V) (V) ft eg. t S (Ta=25*0) * /CH * /CH (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) Id (mA) (Ta=25T3) lo (o n ) F Ds(on) Vd s = Vg s 14 C is s g fs Coss ft & 11 m Vg s =0


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    PDF 1RF522 O-220AB RF523 IRF530 O-220 1RF620 1rf520 1RF540 1RF640 IRF510 IRF532 IRF533 IRF541

    1RF530

    Abstract: 1RF540 1rf520 RF543 IRF530 IRF532 IRF533 IRF541 IRF542 IRF543
    Text: - f * m V Vd s £> tt £ £ Vg s eg. tS Ta=25*0 Id Pd V g s th) loss I gss or € * Vdg Hr (V) (V) * /CH * /CH (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) Ciss g fs Coss ft & 11 m Vg s =0 (max) *typ V g s ( Q ) (V) *typ (A) Id (A) Vg s (V) *typ (S)


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    PDF 1RF522 O-220AB RF523 IRF530 IRF630 IRF631 T0-220AB 1RF530 1RF540 1rf520 RF543 IRF532 IRF533 IRF541 IRF542 IRF543

    1RF640

    Abstract: 1rf740 irf810 1RF540 1RF840 IRFAE50 1RF630 IRF612 irf9620 IRF530
    Text: - 253 f m * V Vd s £> tt £ £ Vg s Id Igss Pd V g s th loss or € * Vdg Hr V) (V) * /CH * /CH (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) F Ds(on) Vd s = Vg s Id (mA) 14 ft eg. tS (Ta=25*0) (Ta=25T3) lo(on) Ciss g fs Coss ft & 11 m Vg s =0 (max)


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    PDF 1RF522 O-220AB RF523 IRF530 IRF630 IRF631 T0-220AB 1RF640 1rf740 irf810 1RF540 1RF840 IRFAE50 1RF630 IRF612 irf9620

    1RF640

    Abstract: 1rf630 IRF810 1RF633 1RF634 1RF522 1rf740 Rf644 IRF530 IRF533
    Text: - £> tt £ * f m V Vd s or € * Vdg Hr V £ Vg s tS eg. (Ta=25*0) Id Pd loss I gss Vg s th) 14 ft lo(on) F Ds(on) Vd s = g fs Ciss Coss * /CH * /CH (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) *typ Id (*typ) (max) (*typ) (max) (max) (S) (A) (pF)


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    PDF 1RF522 O-220AB RF523 IRF530 IRF722 IRF723 IRF730 O-220 IRF731 1RF640 1rf630 IRF810 1RF633 1RF634 1rf740 Rf644 IRF533

    IRF5303

    Abstract: irf530 diode IR 132 E FP133 IRF530-3 IR 126 D 34 FP-13 IRF532 F532 FP132
    Text: IRF530/531/532/533 IRFP130/131/132/133 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • TO-220 Lower Ros ON Improved inductive ru gg ed ness Fast sw itching tim es Rugged p olysilicon gate cell structure Lower input capacitance Extended safe operating area


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    PDF IRF530/531/532/533 IRFP130/131/132/133 O-220 IRF5303 irf530 diode IR 132 E FP133 IRF530-3 IR 126 D 34 FP-13 IRF532 F532 FP132

    1RF630

    Abstract: irf810 1RF540 1RF530 1RF620 1rf740 ferranti 1RF634 RF543 IRF9613
    Text: - 244 - ä! € tt f # t Vd s or € * $ fg Ta=25‘ C Vg s • f Vd g )V (V) (V) ie. IGSS Pd Id * /CH * /CH (A) m Vg s th) ID S S max (nA) Vg s (V) (MA) Vd s (V) 14 Coss Crss 5* m. ffi % V g s =0 *typ (A) Id (A) Vg s (V) *typ (S) (*typ) (max) (pF) Id (A)


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    PDF Ta-2510) SD210 TD-12 SD211 SD212 S0213 O-220AB IRF630 IRF631 1RF630 irf810 1RF540 1RF530 1RF620 1rf740 ferranti 1RF634 RF543 IRF9613

    1RF530

    Abstract: 1RF540 1rf630 RF543 BS107PT BS250F SD210 SD211 SD212 TD-12
    Text: - 244 - ä! € tt f # t Vd s * $ fg Vg s Ta=25‘ C ie. IGSS Pd Id Vg s ID S S th) or € * /CH * /CH (A) m (Ta^'C) Ciss max Vd s (V) Vg s (V) 14 Coss Crss (V) (nA) SD2 1 0 CALOGIC N 30 ± 40 5 0m 1. 2 SD211 CALOGIC N 30 25 50m 1. 2 SD212 CALOGIC N 10 ± 40


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    PDF Ta-2510) SD210 TD-12 SD211 SD212 S0213 O-220AB IRF630 IRF631 1RF530 1RF540 1rf630 RF543 BS107PT BS250F TD-12