IPB34CN10N G Search Results
IPB34CN10N G Price and Stock
Infineon Technologies AG IPB34CN10NGATMA1MOSFET N-CH 100V 27A D2PAK |
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IPB34CN10NGATMA1 | Reel |
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Infineon Technologies AG IPB34CN10NGOPTIMOS2 POWER-TRANSISTOR Power Field-Effect Transistor, 27A I(D), 100V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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IPB34CN10NG | 47 |
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IPB34CN10N G Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Curated | Type | |
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IPB34CN10NG |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 27A TO263-3 | Original | |||
IPB34CN10N G |
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N-Channel MOSFETs (20V - 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 33.0 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 27.0 A; | Original | |||
IPB34CN10NGATMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 27A TO263-3 | Original |