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    INTERNATIONAL RECTIFIER MOSFET Search Results

    INTERNATIONAL RECTIFIER MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    INTERNATIONAL RECTIFIER MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF3205 smd

    Abstract: irf640* spice regulator dpak SOIC 8P LDO 3.3 DAC Combo irf3205 spice ldo regulator iru1010-25cp IRU1050-CP
    Text: International Rectifier LDOs and MOSFETs International Rectifier, the power conversion expert, offers optimal power semiconductors for portable, telecom, power supply, computer, motor drive, ballast, and automotive applications. More voltage ratings, from 20 V to 1000 V. More


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    PDF IRF1104 IRF640N IRF3205* IRF1010N* IRFZ48N* IRCZ34 IRFZ46N* IRCZ24 IRL1004 IRFZ44N* IRF3205 smd irf640* spice regulator dpak SOIC 8P LDO 3.3 DAC Combo irf3205 spice ldo regulator iru1010-25cp IRU1050-CP

    AN-1031

    Abstract: No abstract text available
    Text: Application Note AN-1031 Lead Bending Considerations for International Rectifier’s Power Semiconductor Packages By Doug Butchers and Mark Steers, International Rectifier Table of Contents Page Lead Bending .2


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    PDF AN-1031 AN-1031

    doctor-blade

    Abstract: 150um
    Text: Application Note AN-1011 Assembly of FlipFET Devices by Hazel Schofield and Martin Standing, International Rectifier FlipFET™ is a new generation of HEXFET Power MOSFET package from International Rectifier. FlipFET™ combines the latest die design and wafer


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    PDF AN-1011 doctor-blade 150um

    C528 transistors

    Abstract: C528 DIODE
    Text: INTERNATIONAL RECTIFIER 11E D | 4ÖSS4SS 0000774 Data Sheet No. PD-9.445A INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER N-CHAIMNEL POWER MOSFETs TO-247AC PACKAGE 400 Volt, 0.30 Ohm HEXFET TO-247AC TO-3P Plastic Package R IRFP350 IRFP351 IRFP35S IRFP353


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    PDF 075BV0SS C-527 IRFP350, IRFP351, IRFP352, IRFP353 T-39-15 C-528 C528 transistors C528 DIODE

    TR C458

    Abstract: transistors c458 IRFP040 IRFP042 C458 C C459 TIL 220 L740 c458 c455
    Text: INTERNATIONAL RECTIFIER INTERNATIONAL H E D I 4Ö55455 T-39-13 Data Sheet No. PD-9.463A RECTIFIER INTERNATIONAL RECTIFIER HEXFET TRANSISTORS I« R IRFP040 IRFPQ42 N-CHANNEL POWER MOSFETs TO-S47AC PACKAGE Product Summary 50 Volt, 0.028 Ohm, HEXFET TO-247AC TO-3P Plastic Package


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    PDF T-39-13 IRFP040 O-S47AC O-247AC 05BVDSS C-459 IRFP040, IRFP042 T-39-13 C-460 TR C458 transistors c458 IRFP040 C458 C C459 TIL 220 L740 c458 c455

    c628 DIODE

    Abstract: diode c626 DIODE c629 diode c631 c632 DIODE c630 diode 3g50 irf 2030 IRFPG52 diode c630
    Text: INTERNATIONAL RECTIFIER HE D I 4flSS4SE Data Sheet No. PD-9.543A INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER I 0 R REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS IRFPG5G IRFPG52 N-CHANNEL Product Summary 1000 Volt, 2.0 Ohm HEXFET TO-247AC TO-3P Plastic Package


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    PDF O-247AC C-631 IRFPG50, IRFPG52 T-39-15 C-632 c628 DIODE diode c626 DIODE c629 diode c631 c632 DIODE c630 diode 3g50 irf 2030 diode c630

    IRF 544 N MOSFET

    Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
    Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no


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    g371

    Abstract: IRFF330 IRFF331 IRFF332 IRFF333 510 MOSFET EC07 CIRCUIT g371
    Text: HE D | MöSSMSa QGCHB'ìM 0 | INTERNATIONAL Data Sheet No. PD-9.357E _ T-39-Û9 RECTIFIER INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IÖR IRFF330 IRFF331 N-CHAIUNEL POWER MOSFETs TO-39 PACKAGE IRFF33S IRFF333 400 Volt, 1.0 Ohm HEXFET Features: The HEXFET technology is the key to International


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    PDF T-39-Ã G-376 g371 IRFF330 IRFF331 IRFF332 IRFF333 510 MOSFET EC07 CIRCUIT g371

    f422

    Abstract: transistor f422 tr f422 G-377 IRFF423 358E IRFF420 IRFF421 IRFF422 420 Diode 2ba
    Text: HE D I 4055452 INTERNATIONAL 0001400 2 | Data Sheet No. PD-9.358E RECTIFIER INTERNATIONAL RECTIFIER TOR T-39-09 HEXFET TRANSISTORS IRFF4SQ IRFF421 N-CHANNEL POWER MOSFETs TO-3S PACKAGE Q [I IRFF4SS IRFF4S3 500 Volt, 3.0 Ohm HEXFET Features: T he HEXFET® technology is the key to International


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    PDF 0GGci400 T-39-09 G-382 f422 transistor f422 tr f422 G-377 IRFF423 358E IRFF420 IRFF421 IRFF422 420 Diode 2ba

    Untitled

    Abstract: No abstract text available
    Text: 4ÔSS452 0D1SM1E International gog Rectifier • INR PD-9.868 IRFL210 INTERNATIONAL RECTIFIER HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements


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    PDF SS452 IRFL210 OT-223 QD1S417

    1rfp9140

    Abstract: No abstract text available
    Text: International ^Rectifier MÛ55452 DD1SSSG bS3 HEXFET Power MOSFET INTERNATIONAL RECTIFIER PD-9.480C IINR IRFP9140 Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Isolated Central Mounting Hole 175°C Operating Temperature Fast Switching Ease of Paralleling


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    PDF IRFP9140 -100V O-247 O-247 k50Kfi 1rfp9140

    Untitled

    Abstract: No abstract text available
    Text: International jragj Rectifier HEXFET Power MOSFET • • • • • • 4655452 0015514 L12 mifiR PD-9.445C IRFP350 INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling


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    PDF IRFP350 O-247 O-220 O-247

    IRFZ48N

    Abstract: IRFz48N MOSFET
    Text: PD - 9.1406A International IÖR Rectifier IRFZ48N HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated Description Fifth Generation HEXFETsfrom International Rectifier


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    Untitled

    Abstract: No abstract text available
    Text: HE D I 4AS5452 □ Ga'mEM S | Data Sheet No. PD-9.360E INTERNATIONAL RECTIFIER !I “ R I _ INTERNATIONAL RECTIFIER T-39-19 HEXFET TRANSISTORS P-CHANNEL POWER MOSFETs TO-39 PACKAGE -1 0 0 Volt, 0.30 Ohm HEXFET T h e H EXFET® technology is the key to International Rectifier's


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    PDF 4AS5452 T-39-19 IRFF9131 G-406

    hexsense

    Abstract: IRCP054 equivalent
    Text: 4655M5E 0D14b00 Gli International i-R Rectifier HEXFET Power MOSFET IINR PD-9.733 IRCP054 INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Current Sense Isolated Central Mounting Hole 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements


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    PDF 4655M5E 0D14b00 IRCP054 0014b07 hexsense IRCP054 equivalent

    Untitled

    Abstract: No abstract text available
    Text: International Rectifier 4fi5S4S5 DDlSTSfl fl30 • INR _ HEXFET Power MOSFET • • • • PD-9.848 _ IRLIZ34G INTERNATIONAL RECTIFIER bSE » Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Logic-Level Gate Drive


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    PDF IRLIZ34G O-220

    5S45S

    Abstract: No abstract text available
    Text: Provisional Data Sheet No. PD 9.1295A International IOR Rectifier IRFY9240CM HEXFET POWER MOSFET P-CHANNEL -200Volt, 0.51Î2 HEXFET Product Summary International Rectifier’s HEXFET technology is the key to its advanced line of power MOSFET transistors.The effi­


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    PDF IRFY9240CM -200Volt, 5545S DD24541 5S45S

    Untitled

    Abstract: No abstract text available
    Text: 4055432 0014722 bb3 • INR International i“R Rectifier PD-9.901 IRF630S INTERNATIONAL RECTIFIER HEXFET Power MOSFET • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements


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    PDF IRF630S SMD-220

    Untitled

    Abstract: No abstract text available
    Text: Il International ü g Rectifier MflSSMSE ÜOm71G TMl • INR IRF624 INTERNATIONAL RECTIFIER HEXFET Power MOSFET • • • • • PD-9.472B Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements bSE ]>


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    PDF Om71G IRF624

    Untitled

    Abstract: No abstract text available
    Text: PD-9.1000 International j»g Rectifier IRF744 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Description Third Generation HEXFETs from International Rectifier provide the designer


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    PDF IRF744 O-220 D-6380

    RD202

    Abstract: No abstract text available
    Text: International ! - R Rectifier HEXFET Power MOSFET • • • • • INR MÛ554S2 QGlSlbQ PD-9.651A IRFI740G INTERNATIONAL RECTIFIER Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance


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    PDF 554S2 IRFI740G O-220 4fiSS452 RD202

    IRFP460

    Abstract: IRFP460 IR irfp460 mosfet
    Text: International mg Rectifier 4ASS452 GD155M4 35T H I N R HEXFET Power MOSFET INTERNATIONAL RECTIFIER • • • • • • PD-9.512B IRFP460 Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling


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    PDF 4ASS452 GD155M4 IRFP460 O-247 O-220 O-218 IRFP460 IRFP460 IR irfp460 mosfet

    2N6764 JANTX

    Abstract: 2n6764 9337d 2N6763
    Text: H E D | 4355452 INTERNATIONAL Q0Q131Ö b | T - i f ' / -3 Data Sheet No. PD-9.337D RECTIFIER INTERNATIONAL RECTIFIER HEXFETTRANSISTORS I O R *JANTXV2N67B4 *JANTX2N6764 JEDEC REGISTERED IM-CHANNEL POWER MOSFETs SN6764 SN6763 ‘ QUALIFIED TO MIL-S-19500/543


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    PDF Q0Q131Ö MIL-S-19500/543 JANTXV2N67B4 JANTX2N6764 SN6764 SN6763 MS55MS2 T-39-13 2N6764 2N6763 2N6764 JANTX 9337d

    IRF7316

    Abstract: tfr 586
    Text: International lOR Rectifier PD - 9.1505A IRF7316 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated V q ss = -30V Rds oh = 0.058Q Description Fifth Generation HEXFETs from international Rectifier


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    PDF IRF7316 EIA-S41. IRF7316 tfr 586