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    Infineon Technologies AG IRFZ48NSTRLPBF

    MOSFET N-CH 55V 64A D2PAK
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    Infineon Technologies AG IRFZ48NPBF

    MOSFET N-CH 55V 64A TO220AB
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    Infineon Technologies AG IRFZ48NL

    MOSFET N-CH 55V 64A TO262
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    Infineon Technologies AG AUIRFZ48N

    MOSFET N-CH 55V 69A TO220AB
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    Rochester Electronics LLC AUIRFZ48N

    MOSFET N-CH 55V 69A TO220AB
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    IRFZ48N Datasheets (28)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRFZ48N International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRFZ48N with Standard Packaging Original PDF
    IRFZ48N International Rectifier HEXFET Power MOSFET Original PDF
    IRFZ48N International Rectifier HEXFET Power MOSFET Original PDF
    IRFZ48N Philips Semiconductors N-channel enhancement mode TrenchMOS transistor Original PDF
    IRFZ48N Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFZ48N International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 55V, 53A, Pkg Style TO-220AB Scan PDF
    IRFZ48NL International Rectifier HEXFET Power MOSFET Original PDF
    IRFZ48NL International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRFZ48NL with Standard Packaging Original PDF
    IRFZ48NL International Rectifier HEXFET Power MOSFET Original PDF
    IRFZ48NL Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFZ48NLPBF International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRFZ48NL with Lead Free Packaging Original PDF
    IRFZ48NLPBF International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package Original PDF
    IRFZ48NPBF International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; Similar to the IRFZ48N in lead free packaging Original PDF
    IRFZ48NPBF International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Original PDF
    IRFZ48NS International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRFZ48NS with Standard Packaging Original PDF
    IRFZ48NS International Rectifier HEXFET Power MOSFET Original PDF
    IRFZ48NS International Rectifier HEXFET - Power MOSFET Original PDF
    IRFZ48NS Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFZ48NSPBF International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRFZ48NS with Lead Free Packaging Original PDF
    IRFZ48NSPBF International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Original PDF

    IRFZ48N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFZ48N

    Abstract: equivalent IRFZ48N
    Text: PD - 91406 IRFZ48N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 14mΩ G ID = 64A S Description Advanced HEXFET® Power MOSFETs from International


    Original
    PDF IRFZ48N O-220 O-220AB IRFZ48N equivalent IRFZ48N

    IRFz48N MOSFET

    Abstract: IRFZ48N equivalent IRFZ48N
    Text: PD - 9.1406A IRFZ48N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.016Ω G Description ID = 64A S Fifth Generation HEXFETs from International Rectifier


    Original
    PDF IRFZ48N O-220 IRFz48N MOSFET IRFZ48N equivalent IRFZ48N

    AN-994

    Abstract: IRFZ48NL IRFZ48NS IRL3103L n mosfet low vgs
    Text: PD - 95125 l l l l l l l IRFZ48NSPbF IRFZ48NLPbF Advanced Process Technology Surface Mount IRFZ48NS Low-profile through-hole (IRFZ48NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free Description Advanced HEXFET Power MOSFETs from


    Original
    PDF IRFZ48NSPbF IRFZ48NLPbF IRFZ48NS) IRFZ48NL) EIA-418. AN-994 IRFZ48NL IRFZ48NS IRL3103L n mosfet low vgs

    Untitled

    Abstract: No abstract text available
    Text: PD - 94991A IRFZ48NPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 55V RDS on = 14mΩ G ID = 64A S Description


    Original
    PDF 4991A IRFZ48NPbF O-220

    Untitled

    Abstract: No abstract text available
    Text: PD - 94991B IRFZ48NPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 14mΩ G ID = 64A S Description


    Original
    PDF 94991B IRFZ48NPbF O-220

    Untitled

    Abstract: No abstract text available
    Text: PD - 94991B IRFZ48NPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 14mΩ G ID = 64A S Description


    Original
    PDF 94991B IRFZ48NPbF O-220

    IRFZ48N

    Abstract: IRFz48N MOSFET n-channel mosfet transistor equivalent IRFZ48N IRFZ48N equivalent mosfet transistor TRANSISTOR mosfet
    Text: isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ48N FEATURES •Drain Current –ID= 64A@ TC=25℃ ·Drain Source Voltage: VDSS= 55V Min ·Static Drain-Source On-Resistance : RDS(on) = 0.014Ω(Max) ·Fast Switching DESCRIPTION


    Original
    PDF IRFZ48N IRFZ48N IRFz48N MOSFET n-channel mosfet transistor equivalent IRFZ48N IRFZ48N equivalent mosfet transistor TRANSISTOR mosfet

    IRFz48N MOSFET

    Abstract: equivalent IRFZ48N IRFZ48N IRFZ48N equivalent Mosfet IRFZ48N
    Text: PD - 91406 IRFZ48N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 14mΩ G ID = 64A S Description Advanced HEXFET® Power MOSFETs from International


    Original
    PDF IRFZ48N O-220 IRFz48N MOSFET equivalent IRFZ48N IRFZ48N IRFZ48N equivalent Mosfet IRFZ48N

    AN-994

    Abstract: IRFZ48NL IRFZ48NS IRL3103L
    Text: PD - 95125 l l l l l l l IRFZ48NSPbF IRFZ48NLPbF Advanced Process Technology Surface Mount IRFZ48NS Low-profile through-hole (IRFZ48NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free Description Advanced HEXFET Power MOSFETs from


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    PDF IRFZ48NSPbF IRFZ48NLPbF IRFZ48NS) IRFZ48NL) EIA-418. AN-994 IRFZ48NL IRFZ48NS IRL3103L

    package marking y6

    Abstract: 220AB marking 7S
    Text: IRFZ48NPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches TO-220AB Part Marking Information @Y6 HQG@) U CDTÃDTÃ6IÃDSA GPU Ã8P9@Ã  Ã & '( 6TT@H7G@9ÃPIÃXXÃ DIU@SI6U DPI6G ( Ã!  DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅ8Å Q6SU ÃIVH 7@S


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    PDF IRFZ48NPbF O-220AB package marking y6 220AB marking 7S

    Untitled

    Abstract: No abstract text available
    Text: PD - 95125 l l l l l l l IRFZ48NSPbF IRFZ48NLPbF Advanced Process Technology Surface Mount IRFZ48NS Low-profile through-hole (IRFZ48NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free Description Advanced HEXFET Æ Power MOSFETs from


    Original
    PDF IRFZ48NSPbF IRFZ48NLPbF IRFZ48NS) IRFZ48NL) EIA-418.

    Untitled

    Abstract: No abstract text available
    Text: PD - 91406 IRFZ48N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 14mΩ G ID = 64A S Description Advanced HEXFET® Power MOSFETs from International


    Original
    PDF IRFZ48N O-220

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1408B Advanced Process Technology Surface Mount IRFZ48NS l Low-profile through-hole (IRFZ48NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRFZ48NS IRFZ48NL l HEXFET Power MOSFET l Advanced HEXFET ® Power MOSFETs from


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    PDF 1408B IRFZ48NS) IRFZ48NL) IRFZ48NS IRFZ48NL

    IRFz48N MOSFET

    Abstract: IRFZ48N
    Text: PD - IRFZ48N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.016Ω G Description ID = 53A S Fifth Generation HEXFETs from International Rectifier


    Original
    PDF IRFZ48N O-220 IRFz48N MOSFET IRFZ48N

    IRFZ48NL

    Abstract: 1408B AN-994 IRFZ48NS
    Text: PD - 9.1408B Advanced Process Technology Surface Mount IRFZ48NS l Low-profile through-hole (IRFZ48NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRFZ48NS IRFZ48NL l HEXFET Power MOSFET l Advanced HEXFET ® Power MOSFETs from


    Original
    PDF 1408B IRFZ48NS) IRFZ48NL) IRFZ48NS IRFZ48NL IRFZ48NL 1408B AN-994 IRFZ48NS

    AN-994

    Abstract: IRFZ48N IRFZ48NS
    Text: Previous Datasheet Index Next Data Sheet PRELIMINARY PD 9.1408 IRFZ48NS HEXFET Power MOSFET Advanced Process Technology l Surface Mount l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description D l VDSS = 55V


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    PDF IRFZ48NS AN-994 IRFZ48N IRFZ48NS

    DSAUTAZ0071

    Abstract: TO-262
    Text: IRFZ48NS/L Package Outline TO-262 Outline Part Marking Information TO-262 IRFZ48NS/L Package Outline TO-262 Outline Part Marking Information HEXFET TO-262


    Original
    PDF O-262 O-262 DSAUTAZ0071 TO-262

    IRFZ48NPBF

    Abstract: No abstract text available
    Text: PD - 94991 IRFZ48NPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 55V RDS on = 14mΩ G ID = 64A S Description


    Original
    PDF IRFZ48NPbF O-220 for-220AB IRFZ48NPBF

    Untitled

    Abstract: No abstract text available
    Text: International S Rectifier PD 9.1406 IRFZ48N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynam ic dv/dt Rating 175°C Operating Tem perature Fast Switching V dss = 55 V ^D S on = 0 . 0 1 6 D Fully Avalanche Rated Id = 5 3 A Description utilize advanced processing techniques to achieve


    OCR Scan
    PDF IRFZ48N O-220 0D5344b

    IRFZ48N

    Abstract: No abstract text available
    Text: PD - 9.1406A International IGR Rectifier IRFZ48N HEXFET Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vqss = 55 V ^ D S o n = 0.0160 lD = 64A Description


    OCR Scan
    PDF IRFZ48N IRFZ48N

    sd32a

    Abstract: No abstract text available
    Text: PD - 9.1408A International IQ R Rectifier IRFZ48NS/L HEXFET Power M OSFET • • • • • • Advanced Process Technology Surface Mount IRFZ48NS Low-profile through-hole (IRFZ48NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss = 55V


    OCR Scan
    PDF IRFZ48NS) IRFZ48NL) IRFZ48NS/L po000 C-478 sd32a

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY International M R Rectifier PD 9.1408 IRFZ48NS HEXFET Power MOSFET • Advanced Process Technology • Surface Mount • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated Description VDSS = 55V


    OCR Scan
    PDF IRFZ48NS

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1408A International IQ R Rectifier IRFZ48NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRFZ48NS • Low-profilethrough-hole(IRFZ48NL) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss = 55V


    OCR Scan
    PDF IRFZ48NS) IRFZ48NL)

    IRFZ48N

    Abstract: IRFz48N MOSFET
    Text: PD - 9.1406A International IÖR Rectifier IRFZ48N HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated Description Fifth Generation HEXFETsfrom International Rectifier


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    PDF