Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    INTERNATIONAL RECTIFIER IGBT Search Results

    INTERNATIONAL RECTIFIER IGBT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    INTERNATIONAL RECTIFIER IGBT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ic ir2110

    Abstract: IR2110 IGBT IR2110 design ir2110 application MOSFET IGBT RECTIFIER IRGSI270F06 ir igbt ir2110 mosfet IGBT dv
    Text: DESIGN TIPS International Rectifier DESIGN TIPS DT 92-3AJ ・APPLICATION ENG・ ・233 KANSAS ST.・ ・EL SEGUNDO,CA.90245・ ・TEL（310） ）322-3331・ ・FAX（310） ）322-3332 INTERNATIONAL RECTIFIER・ コントロール IC による MOSFET および IGBT 用


    Original     		PDF 92-3AJ -11mV/C IRGPC50FIGBT 47W10W0W IR2110 IRGSI270F06 600nC ic ir2110 IR2110 IGBT IR2110 design ir2110 application MOSFET IGBT RECTIFIER ir igbt ir2110 mosfet IGBT dv

    IRGPC56

    Abstract: No abstract text available
    Text: INTERNATIONAL RECTIFIER SbE D • 4fl5S45S OOlDbaT 1 ■ Data Sheet No. PD<9.662 T - 3^-63 \. INSULATED GATE BIPOLAR TRANSISTOR International Rectifier IRGPC56 600V, 7SA 600V, 75A, TO-247AC IGBT FEATURES International Rectifier’s IRG series of Insulated Gate


    OCR Scan     		PDF 4fl5S45S IRGPC56 O-247AC 554S2 0G10b43 IRGPC56

    IRGPC46

    Abstract: 10a 100v bipolar transistor mosfet induction heater S101 SS452 VQE 21 d
    Text: INTERNATIONAL RECTIFIER 4055452 OOlOba? 2 2bE D Data Sheet No. PD-9.663 INSULATED GATE BIPOLAR TRANSISTOR T- 3 °[ -03 International g*»]Rectifier IRGPC46 BOOV, BO A FEATURES 600V, 60A, TO-247AC IGBT International Rectifier’s IRG series of Insulated Gate


    OCR Scan     		PDF O-247AC IRGPC46 10a 100v bipolar transistor mosfet induction heater S101 SS452 VQE 21 d

    Q405

    Abstract: vqe 24 d q405 transistor vqe 23 IRGBC26 TO220AB IGBT t303 3i03 a y8e
    Text: INTERNATIONAL RECTIFIER EbE D 4055455 00105=11 7 • Data Sheet No. PD-9.669 T-3Ì-03 International Usi Rectifier INSULATED GATE BIPOLAR TRANSISTOR IRGBCS6 600V, 19A FEATURES 600V, 19A, TO-220AB IGBT International Rectifier’s IR G series o f Insulated Gate


    OCR Scan     		PDF Q01QS11 O-220AB Q405 vqe 24 d q405 transistor vqe 23 IRGBC26 TO220AB IGBT t303 3i03 a y8e

    Untitled

    Abstract: No abstract text available
    Text: INTERNATIONAL RECTIFIER 2t>E D • HflSS4S2 QQ1DST7 S ■ Data Sheet No. PD-9.619A T-3^-03 INSULATED GATE BIPOLAR TRANSISTOR International I “ R !Rectifier IRGBC30 600V, S3A FEATURES 600V, 23A, TO-220AB IGBT International Rectifier’s IRG series of Insulated Gate


    OCR Scan     		PDF IRGBC30 O-220AB 4aSS452 T-31-Ã

    irgpc50

    Abstract: No abstract text available
    Text: INTERNATIONAL RECTIFIER 2bE D • 4655455 001Db33 fl ■ Data Sheet No. PD-9.664 T-3R-C>3 INSULATED GATE BIPOLAR TRANSISTOR International iI<?RlRectifier IRGPC50 600V, 55A 600V, 55A, TO-247AC IGBT FEATURES International Rectifier’s IRG series of Insulated Gate


    OCR Scan     		PDF 001Db33 IRGPC50 O-247AC 5S452 0D10b37 S54S2 0Q10b3Ã irgpc50

    1117s

    Abstract: transistor wc 2C vqe 24 d TO220AB IGBT PHPI IRGBC36
    Text: INTERNATIONAL RECTIFIER 4Ö5S4S2 00l0bQ3 T • 2t.E D Data Sheet No. PD-9.668 • 7 3*?-03 - - International ÜH Rectifier INSULATED GATE BIPOLAR TRANSISTOR BOOV, 34A FEATURES 600V, 34A, TO-220AB IGBT International R ectifier’s IR G series of Insulated G ate


    OCR Scan     		PDF 00l0bG3 O-220AB 1117s transistor wc 2C vqe 24 d TO220AB IGBT PHPI IRGBC36

    IRGAC50U

    Abstract: transistor G46 IGBT g48 ge 142 bt 34w
    Text: International Rectifier PD-9.726A IRGAC50U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while


    OCR Scan     		PDF pd926a IRGAC50U 001flb5G IRGAC50U transistor G46 IGBT g48 ge 142 bt 34w

    ir*c30ud

    Abstract: IRGMC30U
    Text: International Ira*]Rectifier PD-9.715A IRGMC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while


    OCR Scan     		PDF IRGMC30U IRGMC30UD IRGMC30UU MIL-S-19500 O-254 ir*c30ud IRGMC30U

    IRGBC-20

    Abstract: No abstract text available
    Text: INTERNATIONAL RECTIFIER 2bE D • ^ 5 5 4 5 2 QDlOSflS 1 ■ Data Sheet No. PD-9.626A T- INSULATED GATE BIPOLAR TRANSISTOR -03 International @ ^ 3 Rectifier IR G B C SO GOOV, 1 3 A FEATURES 600V, 13A, T0-220AB IGBT International Rectifier's IRG series of Insulated Gate


    OCR Scan     		PDF T0-220AB IRGBC20 IRGBC-20

    Untitled

    Abstract: No abstract text available
    Text: International ! r]Rectifier PD-9.718A IRGMC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while


    OCR Scan     		PDF IRGMC50F IRGMC50FD IRGMC50FU O-254 4fiSS45S MIL-S-19500

    Untitled

    Abstract: No abstract text available
    Text: International S Rectifier PD-9.722A IRGAC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while


    OCR Scan     		PDF IRGAC30U

    IR 92 0151

    Abstract: IRGAC40F IRGAC40 transistor g23
    Text: International TOR PD-9.723A ]Rectifier IRGAC40F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while


    OCR Scan     		PDF IRGAC40F IR 92 0151 IRGAC40 transistor g23

    2sc 1740 TRANSISTOR equivalent

    Abstract: 40HFL60 IRGMC40F 480V1
    Text: International Hg] Rectifier PD-9.716A IRGMC40F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while


    OCR Scan     		PDF pd96a IRGMC40F IRGMC40FD IRGMC40FU MIL-S-19500 O-254 2sc 1740 TRANSISTOR equivalent 40HFL60 IRGMC40F 480V1

    IRGAC50F

    Abstract: G37 IC J3060 transistor g35 ecs g41 IRGAC50
    Text: International lü ] Rectifier PD-9.725A IRGAC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while


    OCR Scan     		PDF IRGAC50F 40HFL60 S54S5 lflb43 SS452 lflb44 G37 IC J3060 transistor g35 ecs g41 IRGAC50

    transistor 9721

    Abstract: 9721 mosfet to3
    Text: International S Rectifier PD-9.721 A IRGAC30F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while


    OCR Scan     		PDF IRGAC30F DD10bl5 transistor 9721 9721 mosfet to3

    IRGMC50F

    Abstract: IRGMC50FD IRGMC50FU 39AF
    Text: International S S Rectifier PD-9.718A IRGMC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while


    OCR Scan     		PDF IRGMC50F IRGMC50FD IRGMC50FU MIL-S-19500 O-254 IRGMC50F IRGMC50FU 39AF

    T3D 87

    Abstract: t3d 99 G-100 IRGMC50U
    Text: International [^Rectifier PD-9.719A IRGMC50U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT D escription Product Sum m ary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while


    OCR Scan     		PDF IRGMC50U IRGMC50U IRGMC50UD IRGMC50UU MIL-S-19500 O-254 G-105 T3D 87 t3d 99 G-100

    Untitled

    Abstract: No abstract text available
    Text: International S Rectifier PD-9.715A IRGMC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated G ate Bipolar Transistors IGBTs from International Rectifier have higher current d en ­ sities than com parable bipolar transistors, while


    OCR Scan     		PDF IRGMC30U IRGMC30UD IRGMC30UU O-254 4flS5455 001flb73

    IRGPC40

    Abstract: No abstract text available
    Text: INTERNAT ION AL RECTIFIER 4055452 QGlübai 1 • 2bE D Data Sheet No. PD-9.665 t - 3 ^ - 0 3 INSULATED GATE BIPOLAR TRANSISTOR International Rectifier IRGPC40 600V, 40A FEATURES 600V, 40A, TO-247AC IGBT International Rectifier's IRG series of Insulated Gate


    OCR Scan     		PDF IRGPC40 O-247AC S54S2 0G10b2S 001Qb2y IRGPC40

    Transistor g29

    Abstract: IRGAC40U IRGAC40 I/SMD transistor g29
    Text: International 5« i Rectifier PD-9.724A IRGAC40U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT j Description Product Sum m ary Part Number V BR CES VcE(on) , ! | Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher current densities than comparable bipolar transistors, while


    OCR Scan     		PDF IRGAC40U 4B55452 001Bb37 Transistor g29 IRGAC40 I/SMD transistor g29

    ci ir2110

    Abstract: IR igbt gate driver ic dc control using ir2110 and mosfet 47N IGBT h bridge ir2110 IG8T IR2110 10DF6 IR211 IRGPC50F
    Text: International Hü] Rectifier D e sig n T ips DT 92-3B INTERNATIONAL RECTIFIER • APPLICATIONS ENG. • 233 KANSAS ST. • ELSEGUNDO, CA. 90245 • TEL 310 322-3331 • FAX (310)322-3332 USING STANDARD CONTROL IC'S TO GENERATE NEGATIVE GATE BIAS FOR MOSFETS AND IGBTS


    OCR Scan     		PDF 92-3B RH89BB, Ligurla49 ci ir2110 IR igbt gate driver ic dc control using ir2110 and mosfet 47N IGBT h bridge ir2110 IG8T IR2110 10DF6 IR211 IRGPC50F

    1E8D

    Abstract: International rectifier thyristor manual C150 SCR D1N5401 single phase half bridge controlled rectifier scr S52K ST200S SCR firing inverter circuit 4 SCR firing 1N2069
    Text: Power Modules Designer's Manual Additional Products From International Rectifier The following is an abridged section that features other International Rectifier power sem iconductor products not covered in this Power Modules Designer's Manual. Individual data sheets offering complete technical data on


    OCR Scan     		PDF IRFK2D054 IRFK2D150 IHFK2D25G IRFK2D350 IHFK2D450 IHFK2DC50 IHFK2DE50 1N2069/71 1N4001/7 1N4816/22 1E8D International rectifier thyristor manual C150 SCR D1N5401 single phase half bridge controlled rectifier scr S52K ST200S SCR firing inverter circuit 4 SCR firing 1N2069

    Untitled

    Abstract: No abstract text available
    Text: International pmia ^Rectifier_ IRGMC40U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while


    OCR Scan     		PDF IRGMC40U MIL-S-1950G T0-254 S54S2