Untitled
Abstract: No abstract text available
Text: IRGAC30U Transistors N-Channel IGBT V BR CES (V)600 V(BR)GES (V) I(C) Max. (A)17 Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case1.67 Thermal Resistance Junc-Amb.30 g(fe) Min. (S) Trans. admitt.3.1
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Original
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IRGAC30U
delay48nÃ
time30nÃ
time200nÃ
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IG22
Abstract: IRGAC50U
Text: Government and Space Other Products from IR IGBT Hermetic Packages 6 0 0 - 1200V V BR CES v GE(th) MIN (V) (V) Part Number IRGAC30F IRGAC30U IRGAC40F IRGAC40U IRGAC50F IRGAC50U IRGMC30F IRGMC30U IRGMC40F IRGMC40U IRGMC50F IRGMC50U 600 3.0 Ej s TY P ic @ •c@
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OCR Scan
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IRGAC30F
IRGAC30U
IRGAC40F
IRGAC40U
IRGAC50F
IRGAC50U
T0-204AE
IRGMC30F
IRGMC30U
IRGMC40F
IG22
IRGAC50U
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Untitled
Abstract: No abstract text available
Text: International S Rectifier PD-9.722A IRGAC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while
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OCR Scan
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IRGAC30U
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IRGAC50
Abstract: MO036AA IRGAC50U IRGAC50F
Text: HU m saa In t e r n a t i o n a l R e c t i f i e r Government and Space Products Control Integrated Circuits Vs Offset Supply Voltage Volts PMt Number Fax-onDemand Number lOUT VBS.VCC SupplyVoltage (Volts) Slnk, Source (Amps) Case Style, (CaseOutline) (1)
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OCR Scan
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IR2110E
IR2110E6
IR2110L
IR2110L6
IR2125Z
10to20
250mA
IRGAC50
MO036AA
IRGAC50U
IRGAC50F
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PDF
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Ig21
Abstract: No abstract text available
Text: International Government and Space ig b t HORlRecBfier Hermetic Packages 6 0 0 -1200V V BR CES Part Number (V) v GE(th) MIN (V) ic @ ic @ v GE(th) M AX TC = 25°C TC = 100°C (V) E t s TY P PD Max. Power Outline Tj = 125 Dissipation Number (m J) (A) IRGAC30F
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OCR Scan
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-1200V
IRGAC30F
IRGAC30U
IRGAC40F
IRGAC40U
IRGAC50F
IRGAC50U
T0-204AE
IRGMC30F
IRGMC30U
Ig21
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PDF
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