2sk152 equivalent
Abstract: IFN152 INTERFET 2SK152 2SJ44 IFP44 2SK113 10 V jfet databook 2SK363
Text: Databook.fxp 1/13/99 2:09 PM Page D-3 D-3 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P
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2SK113
2SK152
2SK363
2SJ44
IFN113
IFN152
IFN363
IFP44
NJ132
NJ132L
2sk152 equivalent
IFN152
INTERFET
2SK152
2SJ44
IFP44
2SK113
10 V
jfet databook
2SK363
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NJ132L
Abstract: 2sk152 equivalent transistor 2sk152 IFN152
Text: Databook.fxp 1/13/99 2:09 PM Page F-34 F-34 01/99 NJ132L Process Silicon Junction Field-Effect Transistor ¥ Low-Noise Amplifier G Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C
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NJ132L
2N6451,
2N6452
2N6453,
2N6454
IF1320
IFN152
2SK152
2sk152 equivalent
transistor 2sk152
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2SK146
Abstract: 2SK147 equivalent 2sk146 datasheet 2sk146 equivalent 2SK147 IFN152 IFN146 2SK113 IFP44 2SJ44
Text: Databook.fxp 1/13/99 2:09 PM Page D-3 D-3 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P
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2SK113
2SK152
2SK363
2SJ44
IFN113
IFN152
IFN363
IFP44
NJ132
NJ132L
2SK146
2SK147 equivalent
2sk146 datasheet
2sk146 equivalent
2SK147
IFN152
IFN146
2SK113
IFP44
2SJ44
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PJ32
Abstract: nj132 SMP4117 SMP4339 smpp1086 SMP3824 SMPJ309 interfet SMP3369 SMP4393
Text: Databook.fxp 1/13/99 2:09 PM Page E-2 E-2 01/99 Small Outline Surface Mount Package Devices N-Channel Silicon Junction Field-Effect Transistors Device Type BVGSS IGSS VGS (OFF) Limits Min Max (V) (V) IDSS Conditions VDS ID (V) (nA) Min (V) @IG (µA) Max
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SMP3369
SMP3370
SMP3458
SMP3459
SMP3460
SMP5462
SMPJ174
SMPJ175
PJ32
nj132
SMP4117
SMP4339
smpp1086
SMP3824
SMPJ309
interfet
SMP3369
SMP4393
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2N6451
Abstract: 2N6452
Text: Databook.fxp 1/13/99 2:09 PM Page B-25 B-25 01/99 2N6451, 2N6452 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Audio Amplifiers ¥ Low-Noise, High Gain Amplifiers ¥ Low-Noise Preamplifiers At 25°C free air temperature:
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2N6451,
2N6452
2N6451
2N6451
2N6452
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IF1322
Abstract: IN1322B NJ132L DIFFERENTIAL/VCW23-5G-2-
Text: 8/2014 IF1322A, IN1322B N-Channel Matched Dual Silicon Junction Field-Effect Transistor ∙ ∙ Absolute maximum ratings at TA = 25oC Low Noise, High Gain Amplifier Reverse Gate Source & Gate Drain Voltage -20V Continuous Forward Gate Current 10 mA Continuous Device Power Dissipation
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IF1322A,
IN1322B
480mW
-65oC
150oC
IF1322
IF1322
IN1322B
NJ132L
DIFFERENTIAL/VCW23-5G-2-
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2N6449
Abstract: MIXER U350 TR320 2N4861 2N4858A 2n4117 equivalent J231 2N5461 2N6450 CD860 SMP5116
Text: Databook.fxp 1/13/99 2:09 PM Page B-3 B-3 01/99 2N3821, 2N3822 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Small Signal Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current
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2N3821,
2N3822
2N3821
2N6449
MIXER U350
TR320
2N4861
2N4858A
2n4117 equivalent
J231 2N5461
2N6450
CD860
SMP5116
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IF3601
Abstract: 2N6449 2N6450 IF9030 interfet B-28 IF140 IF140A IF142 IF1320
Text: Databook.fxp 1/13/99 2:09 PM Page B-24 B-24 01/99 2N6449, 2N6450 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ High Voltage Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Forward Gate Current
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2N6449,
2N6450
2N6449
IF3601
2N6449
2N6450
IF9030
interfet
B-28
IF140
IF140A
IF142
IF1320
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2n4117 equivalent
Abstract: transistor j210 J231 transistor 2N4119 2N4119A J231 2N5461 2N4339 2N4868A J210 SMP4869A
Text: Databook.fxp 1/13/99 2:09 PM Page B-9 B-9 01/99 2N4117, 2N4117A, 2N4118, 2N4118A, 2N4119, 2N4119A N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Audio Amplifiers ¥ Ultra-High Input Impedance Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage
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2N4117,
2N4117A,
2N4118,
2N4118A,
2N4119,
2N4119A
2N4117
2N4117A
2N4118
2N4118A
2n4117 equivalent
transistor j210
J231 transistor
2N4119
2N4119A
J231 2N5461
2N4339
2N4868A
J210
SMP4869A
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2sk152 equivalent
Abstract: 2SJ44 2SK113 2SK152
Text: _ Japanese Equivalent JFET Types SILICON JUNCTION FIELD-EFFECT TRANSISTORS 2SK113 2SK152 2SK363 2SJ44 Japanese IFN113 IFN152 IFN363 IFP44 InterFET NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P Channel Process Unit Limit V M in Parameters
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2SK113
2SK152
2SK363
2SJ44
IFN113
IFN152
IFN363
IFP44
NJ132
NJ132L
2sk152 equivalent
2SJ44
2SK113
2SK152
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Untitled
Abstract: No abstract text available
Text: 9-97 E3 ^ ^ ^ ^ ^ ^ ^ ^^ ^ Jaj> an est^ c|u ivalen ^ F ^ n h £|jes SILICON JUNCTION FIELD-EFFECT TRANSISTORS 2SK113 2SK152 2SK363 2SJ44 Japanese IFN113 IFN152 IFN363 IFP44 InterFET NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P Channel Unit Limit
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2SK113
2SK152
2SK363
2SJ44
IFN113
IFN152
IFN363
IFP44
NJ132
NJ132L
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IFN152
Abstract: 2SJ44 2SK152 2SK113 2SK363 NJ450 IFP44
Text: 9 -9 7 E 3 SILICON JU N C TIO N FIELD-EFFECT TRANSISTORS Japanese 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P Channel Unit Limit -5 0 -2 0 -4 0 25 V M in 1.0 - 20 V 0.1 ( -1 0 V ) 1.0 ( - 30 V)
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2SK113
2SK152
2SK363
2SJ44
IFN113
IFN152
IFN363
IFP44
NJ132
NJ132L
NJ450
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Untitled
Abstract: No abstract text available
Text: IN TER F E T CORP 2bE Mfl2bösa o o o o n o ? D T- 9/-&0 A4 N-Channel JFETs Low-Noise Amplifiers ELECTRICAL CHARACTERISTICS at TA - 25 °C VgSioHi V|0B|GSS Max nA> 2N5556 *30 -1 0 -0 1 -1 5 2N5557 -3 0 -1 0 -0 1 -1 5 2N5558 -3 0 -1 0 -0 1 -1 5 2N6451 -2 0
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2N5556
2N5557
2N5558
2N6451
2N6452
2N6453
2N64S4
NF5101
2N6449
2N6450
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2N4119
Abstract: NF5102 NF5103 2n6449 2N5556 2N5557 2N5558 2N6451 2N6452 2N6453
Text: INTER F E T CORP 2 bE 4 flSbaöfl D 00001=10 7 T- Ÿ/-& 0 A4 N-Channel JFETs Low-Noise Amplifiers ELECTRICAL CHARACTERISTICS at TA - 25 °C VgSioHi Mm V <'<1c (M.AI Conditions Max (nA> 'V GS (V) Mm {V) -1 5 -1 5 -1 5 -0 2 -4 0 15 -0 8 -1 5 -5 0 -6 0 15 1 0
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2N5556
2N5557
2N5558
2N6451
2N6452
NF5301
2N6449
2N6450
2N4119
NF5102
NF5103
2N6453
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Untitled
Abstract: No abstract text available
Text: ï S P R A G U E / S E MI C O ND 8514019 SPRAG U E. GROUP 13 D • ÖS13ÖSG S E M IC O N D S / IC S 93D GQD3tm 4 ■ 0 3 6 1 4 J METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs Low-Noise Amplifiers ELECTRICAL CHARACTERISTICS at Tfl = 25°C V gsiohj
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2N5556
2N5557
2N5558
2N6451
2N6452
2N6453
2N6454
NF5101
NF5102
NF5103
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Untitled
Abstract: No abstract text available
Text: 9 -9 7 B 25 2N6451, 2N6452 N -C H A N N E L SILICO N JUNCTION FIELD-EFFECT TRANSISTOR • AUDIO AMPLIFIERS • LOW NOISE, HIGH GAIN A bsolute m axim um ratin gs at TA = 25° C AMPLIFIERS • LOW NOISE PREAMPLIFIERS 2N6451 2N6452 Reverse Gate Source Voltage
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2N6451,
2N6452
2N6451
NJ132L
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NJ32
Abstract: THJ5486 THJ5459 THJ5484 THJ5485 THJ55456 THJ55466 THJ55476
Text: ALL E GR O M I C R O S Y S T E M S 8514019 SPRAGUE. INC T3 » • D50433Ô SE M IC O N D S/IC S D D G 3 S 6 1 3 ■ ALÛR 93D 0 3 5 8 1 3 > 7"-2 ?*2.S JUNCTION FIELD-EFFECT TRANSISTO R CH IPS N-Channel JFETs ELECTRICAL CHARACTERISTICS at Tfl = 25°C Vgs oh
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D5D433fi
DQQ3S61
THJ5459
THJ5484
THJ5485
THJ6449
THJ5450
THJ6451
NJ132L
THJ6452
NJ32
THJ5486
THJ55456
THJ55466
THJ55476
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Untitled
Abstract: No abstract text available
Text: ALLEGRO MICROSYSTEMS 8514019 SPRAGU E. INC *Î3 J> WÊ 05Q433Ô S E M IC O N D S / IC S O O O S b l M 3 • AL6R 93D 03614 J> 7=z.?-zSMETAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs Low-Noise Amplifiers ELECTRICAL CHARACTERISTICS at Î A = 25°C
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05Q433Ã
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IF1320
Abstract: No abstract text available
Text: B 30 9 -9 7 IF1320 N -C H A N N E L SILICO N JUNCTION FIELD-EFFECT TRANSISTOR • LOW NOISE, HIGH GAIN AMPLIFIER Absolute maximum ratings at TA • 25*C Reverse Gate Source & Reverse Gate Drain Voltage - 20 V Continuous Forward Gate Current 10 mA Continuous Device Power Dissipation
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IF1320
NJ132L
O-236
IF1320
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Untitled
Abstract: No abstract text available
Text: AL L E G R O M I C R O S Y S T E M S 8 5 1 4 0 1 9 SPRA GU E. INC T3 D • 0SGM33fl D D O B b l l S E M I C O N D S / ICS ö ■ ALGR 93 D 03611 $ 7 = Z?-ZS SMALL-OUTLINE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs E LE C T R IC A L CH ARACTERISTICS at Tfl = 25°C
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0SGM33fl
TMPF5951
TMPF5952
TMPF5953
TMPF6451
TMPF6452
TMPF6453
TMPF6454
TMPFBC264A
TMPFBC264B
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MPF103
Abstract: J300B J112A MPF104 MPF105 BF244A BF246A NJ32 TP5951 TP5952
Text: PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C V g S[0 1 VtBHJGSS Conditions Limits Ig s s Oh loss Cnss* < w rDS Min. (V) Max. (V) Vos (V) lo (nA) Min. (mA) Max. (mA) G1vos (V) Min. (mS) Max. (mS) -1 5
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TP5951
TP5952
TP5953
TP6449
MPF103
J300B
J112A
MPF104
MPF105
BF244A
BF246A
NJ32
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BC2640
Abstract: smp6453
Text: IN T E R F E T CORP »F|Ma5bfiflfl o o o o iza i SMALL-OUTLINE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS a tT A = 2S°C . ^BHICSS - - Device Type Min. V fti le ItiA) Max. (nA) SMP 5951 SMP 5952 SMP 5953 SMP 6451 SMP 6452
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BC264A
BC264B
6C264C
BC2640
BF244A
BF244B
BF244C
BF246A
BF246B
BF246C
smp6453
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pj211
Abstract: J300C SMP4220 SMP4091 smp4856 BF24 j300b SMP4117
Text: INT ER F E T CORP 2bE D • 4fl2bflflä 0 0 0 0 2 3 6 T ■ C1 T '- Z Z - Z S ' -r~3s-~?.5 N Channel JFETs _ SMALL OUTLINE N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS Electrical Characteristics at TA = 25°C VGSlo»i V Bfl|GSS less Ui lG
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NJ132
NJ132
pj211
J300C
SMP4220
SMP4091
smp4856
BF24
j300b
SMP4117
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TMPFBF244C
Abstract: tmpfj308 NJ32 TMPF5951 TMPF5952 TMPF5953 TMPF6451 TMPF6452 TMPF6453 TMPF6454
Text: SPRAGUE/SEÎ1IC0ND 8514019 SPRAGUE. GROUP T3 D • SEMICONDS/ ICS 0513050 93D QD03bll 03611 =1 ■ $ SMALL-OUTLINE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C VgS oH V(BR]GSS Limits Igss Device Type Min. (V)
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0D03hll
TMPF5951
TMPF5952
TMPF5953
TMPFBF244C
tmpfj308
NJ32
TMPF6451
TMPF6452
TMPF6453
TMPF6454
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