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    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST Search Results

    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A 720 transistor

    Abstract: MGW12N120D
    Text: MOTOROLA -SEMICONDUCTOR TECHNICAL DATA Advance information DataSheet MGW12N120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate This high voltage Insulated Gate Bipolar Transistor IGBT is co-packaged with a


    Original     		PDF MGW12N120D O-247 A 720 transistor MGW12N120D

    MGY25N120D

    Abstract: No abstract text available
    Text: . - MOTOROLA m~EMlcoNDu~ToR TECHNICAL DATA Advanceinformation DataSheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode MGY25N120D Silicon Gate This high voltage Insulated Gate Bipolar Transistor lGB~ is co-packaged with a


    Original     		PDF MGY25N120D O-264 MGY25N120D

    N60E

    Abstract: MGW21N60ED MGW21 TME 86 T247
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MGW21N60ED/D DATA — Preliminary — lnsuiated Gate Bipolar Transistor Data Sheet MGW21 N60ED N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co–packaged with a soft recovery ultra-fast rectifier and uses an advanced


    Original     		PDF MGW21N60ED/D MGW21 N60ED 140W41 24H609 N60ED/D N60E MGW21N60ED TME 86 T247

    irf 100v 200A

    Abstract: irf 345 irg4pc50sdpbf C-150
    Text: PD - 97316 IRG4PC50SDPbF Standard Speed CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Standard: Optimized for minimum saturation voltage and low operating frequencies <1kHz • IGBT co-packaged with HEXFREDTM ultrafast,


    Original     		PDF IRG4PC50SDPbF O-247AC irf 100v 200A irf 345 irg4pc50sdpbf C-150

    IGBT 200V 50A

    Abstract: No abstract text available
    Text: PD - 97316 IRG4PC50SDPbF Standard Speed CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Standard: Optimized for minimum saturation voltage and low operating frequencies <1kHz • IGBT co-packaged with HEXFREDTM ultrafast,


    Original     		PDF IRG4PC50SDPbF O-247AC IGBT 200V 50A

    Super-247 Package

    Abstract: IRG4PSC71UD
    Text: PD - 91682A IRG4PSC71UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency minimum switching and conduction losses than


    Original     		PDF 1682A IRG4PSC71UD Super-247 O-247 Super-247 Package IRG4PSC71UD

    Untitled

    Abstract: No abstract text available
    Text: PD - 91682A IRG4PSC71UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency minimum switching and conduction losses than


    Original     		PDF 1682A IRG4PSC71UD Super-247 O-247

    diode lt 247

    Abstract: IRG4PSC71UD TB diode 1084 GE
    Text: PD - 91682 IRG4PSC71UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency minimum switching and conduction losses than


    Original     		PDF IRG4PSC71UD Super-247 O-247 diode lt 247 IRG4PSC71UD TB diode 1084 GE

    Untitled

    Abstract: No abstract text available
    Text: PD - 95239 IRG4PH40UD2-EP UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast


    Original     		PDF IRG4PH40UD2-EP 200kHz O-247AD

    ST T4 3660

    Abstract: 035H IRFPE30 IRG4PH40UD2-E induction cooking ge 6220 induction cooking circuits
    Text: PD - 96781 IRG4PH40UD2-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast


    Original     		PDF IRG4PH40UD2-E 200kHz O-247AD ST T4 3660 035H IRFPE30 IRG4PH40UD2-E induction cooking ge 6220 induction cooking circuits

    IRG4PH40UD2-EP

    Abstract: 035H IRGP30B120KD-E
    Text: PD - 95239 IRG4PH40UD2-EP UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast


    Original     		PDF IRG4PH40UD2-EP 200kHz O-247AD IRG4PH40UD2-EP 035H IRGP30B120KD-E

    induction cooking

    Abstract: 035H IRG4PH40UD2-EP IRGP30B120KD-E TO247AD package
    Text: PD - 95239 IRG4PH40UD2-EP UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast


    Original     		PDF IRG4PH40UD2-EP 200kHz O-247AD induction cooking 035H IRG4PH40UD2-EP IRGP30B120KD-E TO247AD package

    transistor* igbt 70A 300 V

    Abstract: 70A 1200V IGBTS Rectifier, 70A, 1000V Super-247 Package irg4psh71udp IRFPS37N50A diode 70A
    Text: PD - 95908 IRG4PSH71UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Copack IGBT Features • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching


    Original     		PDF IRG4PSH71UDPbF 40kHz 200kHz Super-247 O-247 IRFPS37N50A IRFPS37N50A transistor* igbt 70A 300 V 70A 1200V IGBTS Rectifier, 70A, 1000V Super-247 Package irg4psh71udp diode 70A

    Untitled

    Abstract: No abstract text available
    Text: PD - 95908 IRG4PSH71UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Copack IGBT Features • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching


    Original     		PDF IRG4PSH71UDPbF 40kHz 200kHz Super-247 O-247 IRFPS37N50A IRFPS37N50A

    21N60

    Abstract: 21N60ED mgw diode 21n60e transistor data cd 100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGW 21N60ED Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co-packaged with a soft recovery ultra-fast rectifier and uses an advanced


    OCR Scan     		PDF MGW21N60ED 21N60 21N60ED mgw diode 21n60e transistor data cd 100

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATASHEET NO. PD-9.802 International S ] Rectifier IRGPC50UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT • Latch-proof • Simple gate drive • High operating frequency • Switching-loss rating includes


    OCR Scan     		PDF IRGPC50UD2 Liguna49 00220b3

    transistor c295

    Abstract: No abstract text available
    Text: bitemational pd-9.1120 jjjg Rectifier_IRGPH50FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features VCES= 1200V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes


    OCR Scan     		PDF IRGPH50FD2 10kHz) O-247AC transistor c295

    Untitled

    Abstract: No abstract text available
    Text: International IÖR Rectifier PD - 91684 IRG4PSC71 KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins


    OCR Scan     		PDF IRG4PSC71 O-247 O-264,

    Untitled

    Abstract: No abstract text available
    Text: International IÖR Rectifier PD - 91688 IRG4PSH71 KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins


    OCR Scan     		PDF IRG4PSH71 O-247 O-264,

    A/smd diode t53

    Abstract: No abstract text available
    Text: PD -9.1668A International I R Rectifier IRG4ZC70UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Surface Mountable UltraFast CoPack IGBT • UltraFast IGBT optimized for high switching frequencies • IGBT co-packaged with HEXFREDa ultrafast,


    OCR Scan     		PDF IRG4ZC70UD SMD-10 A/smd diode t53

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet PD - 9.1065 International S Rectifier IRGP450UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes


    OCR Scan     		PDF IRGP450UD2 O-247AC

    IRGPC40FD2

    Abstract: ge c122 transistor c117
    Text: hrtemational pd-smus Big Rectifier_ IRGPC40FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT V ces = 600V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes


    OCR Scan     		PDF IRGPC40FD2 10kHz) GPC40FD2 O-247AC 554S2 IRGPC40FD2 ge c122 transistor c117

    IRG4BC20KD

    Abstract: IGBT IRG4BC20KD IRGBC20KD2 transistor iqr
    Text: PD -9.1509 International JQR Rectifier IRG4BC20KD PREUMNAHY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz . and Short


    OCR Scan     		PDF IRG4BC20KD T0220A8 IRG4BC20KD IGBT IRG4BC20KD IRGBC20KD2 transistor iqr

    t593

    Abstract: No abstract text available
    Text: PRELIMINARY DATASHEET NO. PD-9.796 International iipRi R e c tifie r_ ir g b c 30 u d 2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT • Latch-proof • Simple gate drive • High operating frequency


    OCR Scan     		PDF D-6380 5S452 00EBDSS t593