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    N60ED Price and Stock

    Rochester Electronics LLC MGP7N60ED

    IGBT, 10A, 600V, N-CHANNEL
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    DigiKey MGP7N60ED Bulk 5,116 523
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    • 1000 $0.57
    • 10000 $0.57
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    Rochester Electronics LLC MGP4N60ED

    IGBT, 6A, 600V, N-CHANNEL
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    DigiKey MGP4N60ED Bulk 3,631 683
    • 1 -
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    • 100 -
    • 1000 $0.44
    • 10000 $0.44
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    Rochester Electronics LLC MGW14N60ED

    IGBT, 18A, 600V, N-CHANNEL
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    DigiKey MGW14N60ED Bulk 1,103 221
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    • 1000 $1.36
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    onsemi MGP7N60ED

    - Bulk (Alt: MGP7N60ED)
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    Avnet Americas MGP7N60ED Bulk 4 Weeks 629
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    • 1000 $0.57283
    • 10000 $0.5251
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    Rochester Electronics MGP7N60ED 5,116 1
    • 1 $0.5801
    • 10 $0.5801
    • 100 $0.5453
    • 1000 $0.4931
    • 10000 $0.4931
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    onsemi MGP4N60ED

    - Bulk (Alt: MGP4N60ED)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas MGP4N60ED Bulk 4 Weeks 822
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.43805
    • 10000 $0.40154
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    Rochester Electronics MGP4N60ED 3,631 1
    • 1 $0.4436
    • 10 $0.4436
    • 100 $0.417
    • 1000 $0.3771
    • 10000 $0.3771
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    N60ED Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    N60E

    Abstract: MGW21N60ED MGW21 TME 86 T247
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by N60ED/D DATA — Preliminary — lnsuiated Gate Bipolar Transistor Data Sheet MGW21 N60ED N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co–packaged with a soft recovery ultra-fast rectifier and uses an advanced


    Original     		PDF MGW21N60ED/D MGW21 N60ED 140W41 24H609 N60ED/D N60E MGW21N60ED TME 86 T247

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGP11 N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G P 1 1 N 6 0 ED Insulated G ate Bipolar Transistor w ith A n ti-P arallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0-2 20 11 A @ 90°C


    OCR Scan     		PDF MGP11 N60ED/D MGP11N60ED/D

    diode lt 238

    Abstract: 21N60ED
    Text: MOTOROLA Order this document by MGW21 N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G W 21N 60ED Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co-packaged with a soft recovery u ltra -fa s t rectifier and uses an advanced


    OCR Scan     		PDF MGW21 N60ED/D MGW21N60ED/D diode lt 238 21N60ED

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M G N60ED/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M G P11 N60ED Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0 -2 2 0 11 A @ 9 0 ° C


    OCR Scan     		PDF P11N60ED/D N60ED

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by N60ED/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M G P11 N60ED In sulate d G ate Bipolar T ransistor w ith A n ti-P aralle l Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0 -2 2 0 11 A @ 90°C


    OCR Scan     		PDF MGP11N60ED/D