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    21N60

    Abstract: 21N60ED mgw diode 21n60e transistor data cd 100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGW 21N60ED Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co-packaged with a soft recovery ultra-fast rectifier and uses an advanced


    OCR Scan     		PDF MGW21N60ED 21N60 21N60ED mgw diode 21n60e transistor data cd 100

    21N60

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 21N60ED/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M GW 21N60ED Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate T his Insulated G ate B ipolar T ra n sisto r IG BT is c o -p a c k a g e d


    OCR Scan     		PDF MGW21N60ED/D 21N60

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 21N60ED/D SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet M GW 21N60ED Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT Is co-packaged with a soft recovery u ltra -fa s t rectifier and uses an advanced


    OCR Scan     		PDF MGW21N60ED/D 21N60ED