BFS481
Abstract: infineon marking RFs BCR108S
Text: BFS481 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 4 5 6 collector currents from 0.5 mA to 12 mA • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 2 3 • Two galvanic internal isolated Transistors in one package • For orientation in reel see
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BFS481
EHA07196
OT363
BFS481
infineon marking RFs
BCR108S
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BCR108S
Abstract: BFS481 D08060 marking K1 sot363
Text: BFS481 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 4 5 6 collector currents from 0.5 mA to 12 mA • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 2 3 • Two galvanic internal isolated Transistors in one package * Short term description
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BFS481
EHA07196
OT363
BCR108S
BFS481
D08060
marking K1 sot363
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MARKING 1G TRANSISTOR
Abstract: BCR108S BFS481
Text: BFS481 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 4 5 6 collector currents from 0.5 mA to 12 mA • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 2 3 • Two galvanic internal isolated Transistors in one package • For orientation in reel see
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BFS481
EHA07196
OT363
MARKING 1G TRANSISTOR
BCR108S
BFS481
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87757
Abstract: infineon marking RFs BFP181
Text: BFP181 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 3 collector currents from 0.5 mA to 12 mA 2 4 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description
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BFP181
OT143
87757
infineon marking RFs
BFP181
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BFR181
Abstract: 87757 BCW66
Text: BFR181 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 2 3 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description
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BFR181
BFR181
87757
BCW66
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BGT24MTR11
Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters
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24GHz
BF517
BF770A
BF771
BF799
BF799W
BFP181
BFP182
BFP182R
BFP182W
BGT24MTR11
AZ1045-04F
BAR86-02LRH
24GHz Radar
BGA628L7
SMV1705
BFR181W
ALPHA&OMEGA DATE CODE
marking code onsemi Diode
2SC4586
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microwave transistor bfy193
Abstract: BFY193 Micro-X marking "Fp" GaAs Amplifier Micro-X Marking k BAS40 BFY180 BFY405 BXY42 CFY25 micro-x 420
Text: HiRel Discrete & Microwave Semiconductors Introduction and Type Overview HiRel DISCRETE & MICROWAVE SEMICONDUCTORS INTRODUCTION AND TYPE OVERVIEW HiRel Discrete and Microwave Semiconductors from Infineon Technologies AG December 1999 Product Marketing: Infineon Technologies AG
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MWP-25
MWP-35
microwave transistor bfy193
BFY193
Micro-X marking "Fp"
GaAs Amplifier Micro-X Marking k
BAS40
BFY180
BFY405
BXY42
CFY25
micro-x 420
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BFP181R
Abstract: No abstract text available
Text: BFP181R NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 3 collector currents from 0.5 mA to 12 mA • Pb-free RoHS compliant 2 4 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 package 1) • Qualified according AEC Q101 * Short term description
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BFP181R
OT143R
BFP181R
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BFR181W
Abstract: BCW66
Text: BFR181W NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 3 2 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!
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BFR181W
OT323
BFR181W
BCW66
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SOT23 NE
Abstract: BCW66 BFR181W BFR181W foot print
Text: BFR181W NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 3 2 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description
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BFR181W
OT323
SOT23 NE
BCW66
BFR181W
BFR181W foot print
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Untitled
Abstract: No abstract text available
Text: BFP181 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 3 collector currents from 0.5 mA to 12 mA 2 4 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description
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BFP181
OT143
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SIEMENS MICROWAVE RADIO 8 GHz
Abstract: gaas fet micro-X Package marking BAS70B-HP x-band power transistor x-band mmic lna CGY40 MMIC Amplifier Micro-X marking D MSC Microwave gaas fet micro-X Package INFINEON PART MARKING
Text: HiRel Discrete & Microwave Semiconductors Introduction and Type Overview HiRel DISCRETE & MICROWAVE SEMICONDUCTORS INTRODUCTION AND TYPE OVERVIEW HiRel Discrete and Microwave Semiconductors from Infineon Technologies AG December 1999 Product Marketing: Infineon Technologies AG
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MWP-25
MWP-35
SIEMENS MICROWAVE RADIO 8 GHz
gaas fet micro-X Package marking
BAS70B-HP
x-band power transistor
x-band mmic lna
CGY40
MMIC Amplifier Micro-X marking D
MSC Microwave
gaas fet micro-X Package
INFINEON PART MARKING
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Untitled
Abstract: No abstract text available
Text: BFP181 Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at 3 collector currents from 0.5 mA to 12 mA 2 4 • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available
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BFP181
AEC-Q101
OT143
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XM0830SJ
Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters
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24GHz
BF517
BF770A
BF771
BF775
BF799
BF799W
BFP181
BFP181R
BFP182
XM0830SJ
smd code marking 162 sot23-5
MARKING V14 SOT23-5
RF Transistor Selection
smd code marking rf ft sot23
smd code marking NEC rf transistor
sot-363 inf
smd marking D3 SOT363
XM0860SH
MGA51563
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87757
Abstract: BFR181 BCW66
Text: BFR181 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 2 3 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!
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BFR181
87757
BFR181
BCW66
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7449
Abstract: BFP181
Text: BFP181 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 3 collector currents from 0.5 mA to 12 mA 2 4 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!
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BFP181
OT143
7449
BFP181
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AN077
Abstract: BCR108W BFR181W
Text: BFR181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 3 2 1 • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type
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BFR181W
OT323
AN077
BCR108W
BFR181W
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Untitled
Abstract: No abstract text available
Text: BFR181 Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 2 3 • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available
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BFR181
AEC-Q101
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BFP181R
Abstract: marking code RFs
Text: BFP181R NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 3 collector currents from 0.5 mA to 12 mA • fT = 8 GHz, F = 0.9 dB at 900 MHz 2 4 1 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!
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BFP181R
OT143R
BFP181R
marking code RFs
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silicon mems microphone
Abstract: No abstract text available
Text: D a t a S h e e t , V 1 . 0 , A u g . 2 00 7 SMM310 S i l i c on M E M S M i c r op h o n e S m a l l S i g n a l D i s c r et e s Edition 2007-08-31 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2007. All Rights Reserved.
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SMM310
silicon mems microphone
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Untitled
Abstract: No abstract text available
Text: BFR181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 3 2 1 • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type
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BFR181W
OT323
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Untitled
Abstract: No abstract text available
Text: BFR181T NPN Silicon RF Transistor Preliminary data 3 For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR181T
VPS05996
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Untitled
Abstract: No abstract text available
Text: BFP181 NPN Silicon RF Transistor 3 For low-noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 4 fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type
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BFP181
VPS05178
OT143
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Untitled
Abstract: No abstract text available
Text: BFP181R NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA fT = 8 GHz F = 1.45 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP181R
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BFP181R
OT143R
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