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IN5834 Abstract: IN5833 IN5832 N5834 1N5 diode 1N5832 1N5833 Text: IN5832 1N5833 IN5834 I HOT CARRIER POWER RECTIFIER I , employing the Schottky Barrier principle in a large area metal-to-silicon power diode, State of the art’geometrv features epitaxial construction with oxide passivation and metal overlap contact. Ideallv suited for use as rectifiers in low-voltage,	Original	IN5832 1N5833 IN5834 IN5834 IN5833 IN5832 N5834 1N5 diode 1N5832 1N5833	PDF
TIC2260 Abstract: C10601 SC141D IN5829 IN3492 in540i IN1190 IN3493 IN1183A IN1184 Text: G EN ERA L PURPOSE R ECTIFO SS 0 2 5 8 3 5 4 ADVANCED SEMICONDUCTOR 82 ÍE1 02553511 n""""35 11 I 820 00035 o r~ Of-o / lo AVERAGE RECTIFIED FORWARD CURRENT AMPERES VRRM 50 100 150 200 300 400 500 600 700 800 900 1000 1200 IFSM VFM Ca s é 3 3 5 6 MR500	OCR Scan	DDQD035 MR500 IN5400 IN1612 IN1341A MR750 IN1199A IN3208 IN248B IN1191A TIC2260 C10601 SC141D IN5829 IN3492 in540i IN1190 IN3493 IN1183A IN1184	PDF
TIC2260 Abstract: t25000 IN1190 IN5829 IN3492 IN1184A sc1430 jb33 IN2158 in5834 Text: G E K E R A LP U R P O S E R EC TïFISR S 0258354 A D VA N CED S E M IC O N D U C T O R 82 tEl Q25a3Sl<0000035 ° I 82D 00035 o r - o / - o f lo AV ER A G E R ECTIFIED FORW ARD C U R R EN T AM PERES VRRM 50 100 150 200 300 400 500 600 700 800 900 1000 1200	OCR Scan	MR500 IN5400 IN1612 IN1341A MR750 IN1199A IN3208 IN248B IN1191A IN2154 TIC2260 t25000 IN1190 IN5829 IN3492 IN1184A sc1430 jb33 IN2158 in5834	PDF
SD5115 Abstract: IN3492 in1615 IN1202A IN5829 IN3495 IN3491 in3493 IN3880 2N15 Text: GENERAL PURPOSE RECTIFOSS 0 2 5 8 3 5 4 ADVANCED SEMICONDUCTOR 82 ÍE102553511 n""""35 11I 820 00035 o r ~ O f - o / lo A V ER A G E REC TIFIED FORW ARD C U R R EN T AM PERES VRRM 50 100 150 200 300 400 500 600 700 800 900 1000 1200 IFSM V FM Ca s é 3 3	OCR Scan	MR500 MR501 MR502 MR504 MR506 MR508 MR510 IN3491 IN3492 IN3493 SD5115 in1615 IN1202A IN5829 IN3495 IN3880 2N15	PDF
in5388 Abstract: 2N5161 germanium 4m28 Germanium drift transistor 2N5070 1NS248 2N5271 inverter welder 4 schematic Text: THE SEMICONDUCTOR DATA LIBRARY r^r fe SER IES A V O LU M E II i«»* »^ 'i1? prepared by Technicallnformation Center The inform ation in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this inform ation does not convey to the purchaser of semiconductor	OCR Scan	plu300 in5388 2N5161 germanium 4m28 Germanium drift transistor 2N5070 1NS248 2N5271 inverter welder 4 schematic	PDF
TIC2260 Abstract: IN3491 IN1202 IN3492 IN5829 IN1204 IN1190 IN1184 SC141D IN3495 Text: r lo AVERAGE RECTIFIED FORWARD CURRENT AMPERES VRRM 50 100 150 200 300 400 500 600 700 800 900 1000 1200 IFSM VFM Ca s é 3 3 5 6 MR500 MR501 IN5400 IN5401 ÍN1612 IN1613 MR502 IN5402 IN1614 IN1341A IN1342A IN1343A IN1344A MR504 IN5404 ¡N1615 MR506 IN5406	OCR Scan	MR500 IN5400 IN1612 IN1341A MR750 IN1199A IN3208 IN248B IN1191A N2154 TIC2260 IN3491 IN1202 IN3492 IN5829 IN1204 IN1190 IN1184 SC141D IN3495	PDF
1N5160 Abstract: MAX 6438 GEO SEMICONDUCTORS 2N6058 transistor bf 175 2N3902 2N5696 1N5788 Germanium itt Text: DEVICE INDEX Devices characterized in Volume II show the page reference only. Devices characterized in Volume I are referenced by volume and page number. DEVICE 1N5000 1N5001 1N5002 1N5003 1 N 5 1 3 9 .A 1 N 5 1 4 0 .A 1 N 5 1 4 1 .A 1 N 5 1 4 2 .A 1 N 5 1 4 3 .A	OCR Scan	1N5000 1N5001 1N5002 1N5003 1N5149 1N5150 1N5153 1N5155 1N5158 1N5159 1N5160 MAX 6438 GEO SEMICONDUCTORS 2N6058 transistor bf 175 2N3902 2N5696 1N5788 Germanium itt	PDF